共查询到19条相似文献,搜索用时 99 毫秒
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我们利用大角度会聚束电子衍射(简称LACBED)的方法对Pt/Si外延膜界面处Si基体中的应力场进行了研究。Pt/Si外延膜试样是用蒸镀的方法在基体Si片上沿(111)面外延生成金属Pt而成。X-射线分析结果表明Pt沿Si(111)面外延生长很好。图1是Pt/Si界面的明场象。左面为衬底Si,右边为外延生长Pt层。图2是电子束照射在界面附近不同地方的LACBED花样。图中界面在LACBED花样中所处的位置可以清晰地看出。图2(a)可以看出,当界面远离 相似文献
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建立了一种基于硅/锗硅异质结构的应变硅NMOS晶体管的有限元模型,通过模拟研究了沟道区的应变分布及其与器件参数的关系。结果表明,提高锗硅虚拟衬底中锗的摩尔组分、减小应变硅层厚度,可以增加沟道应变。此外,应变量还随器件结构长度的增加而增加。研究结果可为应变硅器件的设计、工艺优化提供参考依据。 相似文献
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基于有限元方法对一款具有SiGe源/漏结构的纳米PMOSEFT进行了建模与分析,沟道应变的计算结果与CBED实验测量值呈现良好的一致性,最小误差仅为1.02×10-4.对新型的SiC源/漏结构的纳米NMOSFET的类似研究表明,栅长越短,应变对沟道的影响越显著.另一方面,采用TCAD工具Sentaurus通过工艺级仿真... 相似文献
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低温制备应变硅沟道MOSFET栅介质研究 总被引:1,自引:0,他引:1
分别对300 °C下采用等离子体增强化学气相淀积(PECVD)和700 °C下采用热氧化技术制备应变硅沟道MOS器件栅介质薄膜进行了研究.采用PECVD制备SiO2栅介质技术研制的应变硅沟道PMOSFET(W/L=20 μm/2 μm)跨导可达45 mS/mm(300 K), 阈值电压为1.2 V;在700 °C下采用干湿氧结合,制得电学性能良好的栅介质薄膜,并应用于应变硅沟道PMOSFET(W/L=52 μm/4.5 μm)器件研制,其跨导达到20mS/mm(300 K),阈值电压为0.4 V. 相似文献
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An attempt has been made to give a detailed review of strained silicon technology. Various device models have been studied that consider the effect of strain on the devices, and comparisons have been drawn. A review of some modeling issues in strained silicon technology has also been outlined. The review indicates that this technology is very much required in nanoscale MOSFETs due to its several potential benefits, and there is a strong need for an analytical model which describes the complete physics of the strain technology. 相似文献
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In this paper, an attempt has been made to give a detailed review of strained silicon technology. Various device models have been studied in this paper that consider the effect of strain on the devices and their comparisons have been drawn. A review of some modeling issues in strained silicon technology has also been outlined. The review indicates that this technology is very much required in nanoscale MOSFETs due to its several potential benefits and there is a strong need of an analytical model which describes the complete physics of the strain technology. 相似文献
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On the basis of the exact resultant solution of two dimensional Poisson’s equations,a new accurate two-dimensional analytical model comprising surface channel potentials,a surface channel electric field and a threshold voltage for fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs is successfully developed. The model shows its validity by good agreement with the simulated results from a two-dimensional numerical simulator.Besides offering a physical insight into device physics,the model provides basic design guidance for fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs. 相似文献
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In this paper a novel analytical approximation method for surface potential (ψs) calculation in compact MOSFET model is presented. It achieves excellent accuracy and good calculation speed over all regions from accumulation to strong inversion. With this approximation method, a surface potential-based compact model for short channel MOSFET is developed. Comparison with measured data is also presented to validate the new model. 相似文献
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Hengze Qu Ziwei Lin Ruijuan Guo Xiyu Ming Wenhan Zhou Shiying Guo Xiufeng Song Shengli Zhang Haibo Zeng 《半导体学报》2020,41(8):082006-082006-6
Two-dimensional material has been regarded as a competitive silicon-alternative with a gate length approaching sub-10 nm, due to its unique atomic thickness and outstanding electronic properties. Herein, we provide a comprehensively study on the electronic and ballistic transport properties of the puckered arsenene by the density functional theory coupled with nonequilibrium Green’s function formalism. The puckered arsenene exhibits an anisotropic characteristic, as effective mass for the electron/hole in the armchair and zigzag directions is 0.35/0.16 m0 and 1.26/0.32 m0. And it also holds a high electron mobility, as the highest value can reach 20 045 cm2V–1s–1. Moreover, the puckered arsenene FETs with a 10-nm channel length possess high on/off ratio above 105 and a steep subthreshold swing below 75 mV/dec, which have the potential to design high-performance electronic devices. Interestingly, the channel length limit for arsenene FETs can reach 7-nm. Furthermore, the benchmarking of the intrinsic arsenene FETs and the 32-bit arithmetic logic unit circuits also shows that the devices possess high switching speed and low energy dissipation, which can be comparable to the CMOS technologies and other CMOS alternatives. Therefore, the puckered arsenene is an attractive channel material in next-generation electronics. 相似文献
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轻掺杂漏(LDD)MOSFET是一种已用在VLSI中的新型MOSFET结构.为了有效地进行LDD MOSFEI的优化设计,我们在二维数值模拟器MINIMOS的基础上,修改了边界条件及输入输出格式,考虑了轻掺杂区的杂质分布,研制成功了一种既适用于常规以MOSFET,又适用于LDD MOSFET的二维数值模拟程序FD-MINIMOS.应用该程序对LDD MOSFET的一系列直流特性模拟的结果表明,不同的轻掺杂浓度对于抑制沟道电场及热电子效应具有不同的效果,为轻掺杂区优化设计提供了重要信息. 相似文献