Investigation of the electrical properties of metal-oxide-metal structures formed from RF magnetron sputtering deposited MgTiO3 films

Thin films of MgTiO₃ high-k dielectric have been prepared by RF magnetron sputtering deposition at various substrate temperatures. X-ray diffraction, atomic force microscopy were used to characterize the deposited films. Experimental results show that substrate temperature has little effect on the stoichinometry. The electrical properties of MgTiO₃ metal-insulator-metal (MIM) capacitors were investigated at various deposition temperatures, Pt/MgTiO₃/Pt/SiO₂/n-Si, were studied. It is shown that the MgTiO₃ (210 nm) MIM capacitor fabricated at 200 °C shows an overall high performance, such as a high capacitance density of ∼1.2 nF/um², a low leakage current of 1.51 × 10⁻⁹ A/cm² at 5 V, low-voltage coefficients of capacitance, and good frequency dispersion properties. All of these indicate that the MgTiO₃ MIM capacitors are very suitable for use in Si analog circuit application or dynamic random access memory (DRAM) cell.     

MgB2 coated conductors directly grown on flexible metallic Hastelloy tapes by hybrid physical–chemical vapor deposition

MgB₂ coated conductors (CCs), which can avoid the low packing density problem of powder-in-tube (PIT) processed wires, can be a realistic solution for practical engineering applications. Here we report on the superior superconducting properties of MgB₂ CCs grown directly on the flexible metallic Hastelloy tapes without any buffer layer at various deposition temperatures from 520 to 600 °C by using hybrid physical–chemical vapor deposition (HPCVD) technique. The superconducting transition temperatures (T_c) are in the range of 38.5–39.4 K, comparable to bulk samples and high quality thin films. Clear (101) and (002) reflection peaks of MgB₂ are observed in the X-ray diffraction patterns without any indication of chemical reaction between MgB₂ and Hastelloy tapes. From scanning electron microscopy, it was found that connection between MgB₂ grains and voids strongly depend on the growth temperature. A systematic increase in the flux pinning force density and thereby the critical current density with decreasing growth temperature was observed for the MgB₂ CCs. The critical current density (J_c) of J_c(5 K, 0 T) ～10⁷ A/cm² and J_c(5 K, 2.5 T) ～10⁵ A/cm² has been obtained for the sample fabricated at a low growth temperature of 520 °C. The enhanced J_c (H) behavior can be understood on the basis of the variation in the microstructure of MgB₂ CCs with growth temperature.     

Ultraintense lasers: relativistic nonlinear optics and applications

Traditional optics and nonlinear optics are related to laser–matter interaction with eV characteristic energy. Recent progresses in ultrahigh intensity makes it possible to drive electrons with relativistic energy opening up the field of relativistic nonlinear optics. In the last decade, lasers have undergone orders-of-magnitude jumps in peak power, with the invention of the technique of chirped pulse amplification (CPA) and the refinements of femtosecond techniques. Modern CPA lasers can produce intensities greater than 10²¹ W/cm², one million times greater than previously possible. These ultraintense lasers give researchers a tool to produce unprecedented pressures (terabars), magnetic fields (gigagauss), temperatures (10¹⁰ K), and accelerations (10²⁵ g) with applications in fusion energy, nuclear physics (fast ignition), high-energy physics, astrophysics, and cosmology. They promote the optics field from the eV to the GeV.     

Structural,optical, and electrical properties of tin sulfide thin films grown with electron-beam evaporation

The effect of growth temperature on the phase evolution and morphology change of tin sulfide thin films by electron-beam evaporation was investigated. Orthorhombic tin monosulfide (SnS) was dominant at low growth temperature of 25 °C, whereas a sulfur-rich phase of Sn₂S₃ coalesced as the growth temperature increased over 200 °C. Thin film growth ceased at 280 °C due to re-evaporation of the tin sulfide. The dependence of growth temperature on the phase evolution of tin sulfide was confirmed by X-ray diffraction, scanning electron microscopy, and UV–Vis spectrophotometry. The lowest electrical resistivity of ∼51 Ω cm, with a majority hole concentration of ∼10¹⁷ cm⁻³, was obtained for the film grown at 100 °C, and the resistivity drastically increased with increasing growth temperature. This behavior was correlated with the emergence of resistive sulfur-rich Sn₂S₃ phase at high temperatures.     

Highly-doped p-type few-layer graphene on UID off-axis homoepitaxial 4H–SiC

In this report we investigate structural and electrical properties of epitaxial Chemical Vapor Deposition quasi-free-standing graphene on an unintentionally-doped homoepitaxial layer grown on a conducting 4H–SiC substrate 4° off-axis from the basal [0001] direction towards [11-20]. Due to high density of SiC vicinal surfaces the deposited graphene is densely stepped and gains unique characteristics. Its morphology is studied with atomic force and scanning electron microscopy. Its few-layer character and p-type conductance are deduced from a Raman map and its layers structure determined from a high-resolution X-ray diffraction pattern. Transport properties of the graphene are estimated through Hall effect measurements between 100 and 350 K. The results reveal an unusually low sheet resistance below 100 Ω/sq and high hole concentration of the order of 10¹⁵ cm⁻². We find that the material's electrical properties resemble those of an epitaxially-grown SiC PIN diode, making it an attractive platform for the semiconductor devices technology.     

Structural and dielectric properties of Ba3V2O8 ceramics

Polycrystalline sample of Ba₃V₂O₈ was prepared by a high-temperature solid-state reaction technique. Preliminary X-ray diffraction (XRD) analysis confirms the formation of single-phase compound of hexagonal (rhombohedral) crystal structure at room temperature. Microstructural analysis by scanning electron microscope (SEM) shows that the compound has well defined grains, which are distributed uniformly throughout the surface of the sample. The dielectric properties of the compound studied in a wide frequency range (10²–10⁶ Hz) at different temperatures (25–400 °C), exhibits that they are temperature dependent. Detailed analysis of impedance spectra showed that the electric properties of the material are strongly dependent on frequency and temperature. The activation energy, calculated from the temperature dependence of ac conductivity (dielectric data), was found to be 0.23 eV at 50 kHz in the higher temperature region.     

K-line X-ray fluorescence from highly charged iron ions under dense astrophysical plasma conditions

In the present work, we report an investigation of plasma environment effects on the atomic parameters associated with the K-vacancy states in highly charged iron ions within the astrophysical context of accretion disks around black holes. More particularly, the sensitivity of K-line X-ray fluorescence parameters (wavelengths, radiative transition probabilities, and Auger rates) in Fe XVII–Fe XXV ions has been estimated for plasma conditions characterized by an electron temperature ranging from 10⁵ to 10⁷ K and an electron density ranging from 10¹⁸ to 10²² cm⁻³. In order to do this, relativistic multiconfiguration Dirac-Fock atomic structure calculations have been carried out by considering a time averaged Debye-Hückel potential for both the electron–nucleus and electron–electron interactions.     

Cold electrons acceleration in TNSA laser-generated plasma using a low-contrast fs laser

The fs laser facility in Bordeaux, delivering an intensity of 10¹⁸ W/cm² at normal incidence on thin foils, has been used to induce forward electron and ion acceleration in target-normal-sheath-acceleration (TNSA) regime. Micrometric thin foils with different composition, thickness, and electron density, were prepared to promote the charge particle acceleration in the forward direction. The plasma electron and ion emission monitoring were performed on-line using SiC semiconductor detectors in time-of-flight (TOF) configuration and gaf-chromics films both covered by thin absorber filters. The experiment has permitted to accelerate electrons and protons. A special attention was placed to detect relativistic hot electrons escaping from the plasma and cold electrons returning to the target position. The electron energies of the order of 100 keV and of about 1 keV were detected as representative of hot and cold electrons, respectively. A high cold electron contribution was measured using low-contrast fs laser, while it is less evident using high-contrast fs lasers. The charge particle acceleration depends on the laser parameters, irradiation conditions, and target properties, as will be presented and discussed.     

Effects of laser fluence on the structural properties of pulsed laser deposited ruthenium thin films

Ruthenium (Ru) has received great interest in recent years for applications in microelectronics. Pulsed laser deposition (PLD) enables the growth of Ru thin films at low temperatures. In this paper, we report for the first time the characterization of pulsed laser deposited Ru thin films. The deposition processes were carried out at room temperature in vacuum environment for different durations with a pulsed Nd:YAG laser of 355-nm laser wavelength, employing various laser fluences ranging from 2 J/cm² to 8 J/cm². The effect of the laser fluence on the structural properties of the deposited Ru films was investigated using surface profilometry, scanning electron microscopy (SEM), and X-ray diffraction (XRD). Ru droplets, some spherical in shape and some flattened into round discs were found on the deposited Ru. The droplets were correlated to ripple formations on the target during the laser-induced ejection from the target. In addition, crystalline Ru with orientations of (100), (101), and (002) was observed in the XRD spectra and their intensities were found to increase with increasing laser fluence and film thickness. Grain sizes ranging from 20 nm to 35 nm were deduced using the Scherrer formula. Optical emission spectroscopy (OES) and energy-dispersive X-ray spectroscopy (EDS) show that the composition of the plume and the deposited Ru film was of high purity.     

Effect of carbon powder thermal activation on characteristics of supercapacitor electrodes

The capacitors are increasingly being used as energy storage devices in various power systems. The scientists of the world are trying to maximize the electrical capacity of the supercapacitors. This research aims to use plasma spray technology in order to develop carbon electrodes with carbon powder thermally treated in the temperatures ranging from 100 °C to 900 °C in the environment of argon gas. The BET research on primary carbon powder reveal that the largest surface area is obtained at 100 °C heating temperature – 577 m²/g, and at 900 °C – 507 m²/g. Meanwhile, at 300–700 °C heating temperatures the powder surface area decreases up to 2.2 times. The measurements of supercapacitor specific capacitance indicate that the largest values, 15 F/g and 8.7 F/g, were obtained when the respective specific surface area of primary powders equalled 577 m²/g and 261 m²/g.     

Optimisation of drive pulse configuration for a Ni-like Sn X-ray laser at 12 nm

The current saturated operation of X-ray lasers at wavelengths > 15 nm requires at least kilojoule drive energy, which is only available at the largest laser installations in the world. Using a specially designed drive pulse configuration, saturated operation of a Ni-like Sn X-ray laser at 12 nm has been achieved with only 75 J drive energy. An efficiency as high as 9 × 10⁶ in converting laser energy from the 1 eV optical spectral range to the 100 eV soft X-ray range has been reached. This paves the way for applications of saturated X-ray lasers at 12 nm at many other smaller laboratories.     

Structure, surface morphological and opto-electronic properties of zinc sulphide thin films deposited by dip method

ZnS thin films have been deposited by dip technique using succinic acid as a complexing agent. The structural and morphological characterizations of films have been investigated by X-ray diffraction, scanning electron microscope. X-ray pattern shows crystalline has hexagonal structure. The films show that good optical properties high absorption and band gap value was found to be 3.7 eV. The specific conductivity of the film was found to be in order of 10⁻⁵ (Ω cm)⁻¹ and showing n-type conduction.     

Evolution of structural properties of iron oxide nano particles during temperature treatment from 250 °C-900 °C: X-ray diffraction and Fe K-shell pre-edge X-ray absorption study

Iron oxide nano particles with nominal Fe₂O₃ stoichiometry were synthesized by a wet, soft chemical method with heat treatment temperatures from 250 °C to 900 °C in air. The variation in the structural properties of the nano particles with the heat treatment temperature was studied by X-ray diffraction and Fe K-shell X -ray absorption spectroscopy. X-ray diffractograms show that at lower annealing temperatures the nano particle comprise both maghemite and hematite phases. With increasing temperature, the remainder of the maghemite phase transforms completely to hematite. Profile analysis of the leading Bragg reflections reveals that the average crystallite size increases from 50 nm to 150 nm with increasing temperature. The mean primary particle size decreases from 105 nm to 90 nm with increasing heat treatment temperature. The X-ray diffraction results are paralleled by systematic changes in the pre-edge structure of the Fe K-edge X-ray absorption spectra, in particular by a gradual decrease of the t_2g/e_g peak height ratio of the two leading pre-edge resonances, confirming oxidation of the Fe from Fe²⁺ towards Fe³⁺. Transmission electron microscopy (TEM) on the samples treated at temperatures as high as 900 °C showed particles with prismatic morphology along with the formation of stacking fault like defects. High resolution TEM with selected area electron diffraction (SAED) of samples heat treated above 350 °C showed that the nano particles have well developed lattice fringes corresponding to that of (110) plane of hematite.     

Investigation of properties of Cu containing DLC films produced by PECVD process

Copper containing diamond like carbon (Cu-DLC) thin films were deposited on various substrates at a base pressure of 1×10^?3 Torr using a hybrid system involving DC-sputtering and radio frequency-plasma enhanced chemical vapor deposition (RF-PECVD) techniques. The compressive residual stresses of these films were found to be considerably lower, varying between 0.7 and 0.94 GPa and Cu incorporation in these films improve their conductivity significantly. Their structural properties were studied by Raman spectroscopy, atomic force microscopy, scanning electron microscopy, X-ray photoelectron spectroscopy and X-ray diffraction techniques that clearly revealed the presence of Cu in the DLC structure. Raman analysis yields that Cu incorporation in DLC enhances the graphite-like sp² bonding. However, the sp² bonding was found to continuously reduce with the increasing C₂H₂ gas pressure, this may be due to reduction of Cu nanocrystal at the higher pressure. FTIR results inferred various bonding states of carbon with carbon, hydrogen and oxygen. In addition, hydrogen content and sp³ and sp² fractions in different Cu-DLC films were also estimated by FTIR spectra and were correlated with stress, electrical, optical and nano-mechanical properties of Cu-DLC films. The effect of indentation load (4–10 mN) on nano-mechanical properties of these films was also explored.     

An influence of deposition temperature on structural,optical and electrical properties of sprayed ZnO thin films of identical thickness

Nanocrystalline ZnO thin films were deposited at different temperatures (T_s = 325 °C–500 °C) by intermittent spray pyrolysis technique. The thickness (300 ± 10 nm) independent effect of T_s on physical properties was explored. X-Ray diffraction analysis revealed the growth of wurtzite type polycrystalline ZnO films with dominant c-axis orientation along [002] direction. The crystallite size increased (31 nm–60 nm) and optical band-gap energy decreased (3.272 eV–3.242 eV) due to rise in T_s. Scanning electron microscopic analysis of films deposited at 450 °C confirmed uniform growth of vertically aligned ZnO nanorods. The films deposited at higher T_s demonstrated increased hydrophobic behavior. These films exhibited high transmittance (>91%), low dark resistivity (～10^?2 Ω-cm), superior figure of merit (～10^?3 Ω^?1) and low sheet resistance (～10² Ω/□). The charge carrier concentration (η -/cm³) and mobility (μ – cm²V^?1s^?1) are primarily governed by crystallinity, grain boundary passivation and oxygen desorption effects.     

Holographic Image Denoising using Random Laser Illumination

In holographic applications, coherent lasers are indispensable source of illumination. Despite high intensity from coherent light sources, they fail in full-field image projection and illustrate speckle images due to high spatial coherence. This article demonstrates speckle-free high contrast computer-generated holographic image projection upon illumination with a perovskite–polystyrene 10 wt%-based random laser. Solvent-engineered efficient and durable perovskite and perovskite–polystyrene 10 wt%-based random lasers are fabricated. Optical characterizations are elucidated and controlled coherence random lasing operation is achieved under room temperature upon addition of polystyrene concentration 10 wt% on perovskite thin film. The addition of 10 wt% polystyrene concentration results in a low far-field divergence angle of ≈10⁰. The controlled coherence in random lasers is necessary to produce a stable interference pattern and to retain the depth of field in holograms. Additionally, the holographic image projection using random lasers reduces diffraction noise, and exhibits high spatial resolution with full-field imaging. Moreover, this study is clear evidence of an effective strategy to achieve high-performance, indigenous designed-controlled coherence in disordered random lasing media and its application to novel holographic image projection.     

Epitaxial growth of well-ordered ultra-thin Al2O3 film on NiAl (1 1 0) by a single-step oxidation

Well-ordered ultra-thin Al₂O₃ films were grown on NiAl (1 1 0) surface by exposing the sample at various oxygen absorption temperatures ranging from 570 to 1100 K at dose rates 6.6 × 10⁻⁵ and 6.6 × 10⁻⁶ Pa. From the results of low-energy electron diffraction (LEED), Auger electron spectrometer (AES) and X-ray photon spectroscopy (XPS) observations, it was revealed that oxidation mechanism above 770 K is different from well-known two-step process. At high temperature, oxidation and crystallization occurred simultaneously while in two-step process oxidation and crystallization occurred one after another. At high-temperature oxidation well-ordered crystalline oxide can be formed by a single-step without annealing. Well-ordered Al₂O₃ layer with thickness over 1 nm was obtained in oxygen absorption temperature 1070 K and a dose rate 6.6 × 10⁻⁶ Pa at 1200 L oxygen.     

A neodymium fluid laser: Laser emission in circulating state

Differing from conventional liquid lasers, a novel concept of fluid laser was provided, which has attractively potential using in high average power lasers. The laser medium was prepared by dispersing Nd³⁺: phosphate glass micro-balls in organic match liquid. Its optical properties were investigated and the radiative transition rate was calculated by Judd–Ofelt theory. The experiment of laser oscillation in static state indicates that the heat exchanging has limited effect on refractive index of the fluid laser medium in a short time. In circulating state, a laser oscillation occurred at 1058.1 nm when pumped by two 808 nm diode lasers. The maximum output energy is 2.58 mJ with the absorbed pumping energy of 460 mJ. This study offers a new way in the exploration of high average power laser.     

Simulation of 16 × 10 Gb/s WDM system based on optical amplifiers at different transmission distance and dispersion

In this paper, the 16 channel WDM systems at 10 Gb/s have been investigated for the various optical amplifiers and hybrid optical amplifiers and the performance has been compared on the basis of transmission distance and dispersion. The amplifiers EDFA and SOA have been investigated independently and further compared with hybrid optical amplifiers like RAMAN-EDFA and RAMAN-SOA. It is observed that hybrid optical amplifier RAMAN-EDFA provides the highest output power (12.017 and 12.088 dBm) and least bit error rate (10^?40 and 9.08 × 10^?18) at 100 km for dispersion 2 ps/nm/km and 4 ps/nm/km respectively.     

Synthesis of the wheat-like CdSe/CdTe thin film heterojunction and their photovoltaic applications

We report on the fabrication of wheat-like CdSe/CdTe thin film heterojunction solar cells made using a simple electrochemical deposition method and close-spaced sublimation technology on indium tin oxide (ITO) substrates. Structural, optical, and electrical properties of the wheat-like CdSe/CdTe thin film junctions were characterized by X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), energy dispersive spectrometry (EDS), ultraviolet–visible (UV–vis) absorption spectrum and Keithley 2400 analysis. A significant red-shift of the absorption edge is observed in this heterojunction. The heterostructure is composed of the wheat-like CdSe array and CdTe thin film, showing optical properties typical of type II heterostructures that are suited for photovoltaic applications. A photocurrent density of 8.34 mA/cm² has been obtained under visible light illumination of 100 mW/cm². This study demonstrates that the electrochemical deposition and the close-spaced sublimation technology, which are easily adapted to other chemical systems, are promising techniques for large-scale fabrication of low-cost heterojunction solar cells.