Widths of the Hall Conductance Plateaus

We study the charge transport of the noninteracting electron gas in a two-dimensional quantum Hall system with Anderson-type impurities at zero temperature. We prove that there exist localized states of the bulk order in the disordered-broadened Landau bands whose energies are smaller than a certain value determined by the strength of the uniform magnetic field. We also prove that, when the Fermi level lies in the localization regime, the Hall conductance is quantized to the desired integer and shows the plateau of the bulk order for varying the filling factor of the electrons rather than the Fermi level.     

Transport studies of localized and extended states of a two-dimensional electron gas in low magnetic fields

We have observed the quantum Hall effect in a high mobility two-dimensional electron gas to filling factors up to 80 at 0.3 K. This demonstrates the presence of both localized and extended states at low field, and explains the failure of the standard semi-classical analysis of Shubnikov–de Haas (SdH) oscillations in this regime. We go on to derive a general expression for the conductivity due to rectangular bands of extended states, and show that the observed temperature dependence of the SdH oscillations is consistent with this picture. An analysis of the oscillations using this expression reveals the predicted levitation of the extended states as the magnetic field is reduced.     

Electron–hole states in the fractional quantum Hall regime probed by photoluminescence

The electron–hole states in the fractional quantum Hall regime is investigated with a back-gated undoped quantum well by photoluminesccence in magnetic fields. The evolution of the photoluminescence spectra is discussed depending on the electron density. We find anomalies of the photoluminescence at the integer as well as the fractional filling factors.     

Spatial structure of an incompressible quantum Hall strip

The incompressible quantum Hall strip is sensitive to charging of localized states in the cyclotron gap. We study the effect of localized states by a density functional approach and find electron density and the strip width as a function of the density of states in the gap. Another important effect is electron exchange. By using a model density functional which accounts for negative compressibility of the QH state, we find electron density around the strip. At large exchange, the density profile becomes nonmonotonic. Both effects, localized states and exchange, lead to a substantial increase of the strip width.     

Semi‐Classical Model of Strongly Correlated Coulomb Systems in Weak Magnetic Field

The integer and fractional quantum Hall effects are two remarkable macroscopic quantum phenomena occurring in two‐dimensional strongly correlated electronic systems at high magnetic fields and low temperatures. Quantization of Hall resistivity in the very high magnetic field regime at partial filling of the lowest Landau level indicates the stabilization of an electronic liquid quantum Hall phase of matter. Other interesting phases that differ from the quantum Hall phases take prominence in weaker magnetic fields when many more Landau levels are filled. These states manifest anisotropic magneto‐transport properties and, under certain conditions, appear to mimic charge density waves and/or liquid crystalline phases. One way to understand such a behavior has been in terms of effective interaction potentials confined to the highest Landau level partially filled with electrons. In this work we show that, for weak magnetic fields, such a quantum treatment of these strongly correlated Coulomb systems resembles a semi‐classical model of rotating electrons in which the time‐averaged interaction potential can be expressed solely in terms of guiding center coordinates. We discuss how the features of this semi‐classical effective potential may affect the stability of various strongly correlated electronic phases in the weak magnetic field regime (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Edge physics of graphene in the quantum Hall regime

We study the electronic edge states of graphene in the quantum Hall regime. For non-interacting electrons, graphene supports both electron-like and hole-like edge states. We find there are half as many edge states of each type in the lowest Landau level compared to higher Landau levels, leading to a quantization of the Hall conductance that is shifted relative to standard two dimensional electron gases. We also consider the effect of quantum Hall ferromagnetism on this edge structure, and find an unusual Luttinger liquid at the edge in undoped graphene. This arises due to a domain wall that forms near the edge between partially spin-polarized and valley-polarized regions. The domain wall has a U(1) degree of freedom which generates both collective and charged gapless excitations, whose consequences for tunneling experiments are discussed.     

The enigma of the quantum Hall effect in graphene

We apply Laughlin’s gauge argument to analyze the ν=0 quantum Hall effect observed in graphene when the Fermi energy lies near the Dirac point, and conclude that this necessarily leads to divergent bulk longitudinal resistivity in the zero temperature thermodynamic limit. We further predict that in a Corbino geometry measurement, where edge transport and other mesoscopic effects are unimportant, one should find the longitudinal conductivity vanishing in all graphene samples which have an underlying ν=0 quantized Hall effect. We argue that this ν=0 graphene quantum Hall state is qualitatively similar to the high field insulating phase (also known as the Hall insulator) in the lowest Landau level of ordinary semiconductor two-dimensional electron systems. We establish the necessity of having a high magnetic field and high mobility samples for the observation of the divergent resistivity as arising from the existence of disorder-induced density inhomogeneity at the graphene Dirac point.     

Nuclear-spin-lattice relaxation in a bilayer quantum Hall system

We examined the electron spin degree of freedom around the total Landau-level filling factor ν=1 in a bilayer system via nuclear spins. In a balanced bilayer system, nuclear-spin-lattice relaxation rate 1/T₁, which probes low-energy electron spin fluctuations, increases gradually as the system is driven from the quantum Hall (QH) state through a phase transition to the compressible state. This result demonstrates that the electron spin degree of freedom is not frozen either in the QH or compressible states. Furthermore, as the density difference between the two layers is increased from balanced bilayer to monolayer configurations, 1/T₁ around ν=1 shows a rapid yet smooth increase. This suggests that pseudospin textures around the bilayer ν=1 system evolves continuously into the spin texture for the monolayer system.     

Spin polarization dependent optical transition rates observed in the integer quantum Hall region

We report on a field-dependent photoluminescence (PL) emission rate for the transitions between band states in modulation-doped CdTe/Cd_1−xMg_xTe single quantum wells in the integer quantum Hall region. The recombination time observed for the magneto-PL spectra varies in concomitance with the integer quantum Hall plateaus. Furthermore, different PL decay times were observed for the two circular polarizations, i.e. for the transitions between the Zeeman split subbands of the Landau levels. We analyzed the data in comparison with the experimentally determined spin polarization of the conduction electrons and the Zeeman splitting of the valence band. Furthermore, we discuss the relevance of the spin polarization of the conduction electrons, the electron–hole exchange interaction and the spin-flip processes of the hole states for the PL decay time.     

Correlated electrons in narrow channels

We investigate the properties of a system of interacting electrons in a narrow channel in the quantum Hall effect regime. We find that an increase in the strength of the Coulomb interaction causes abrupt changes in the width of the charge-density profile of translationally invariant states. The resulting phase diagram includes many of the stable odd-denominator states and also a novel fractional quantum Hall state at lowest half-filled Landau level. The collective modes evaluated at and at reveal soft modes in between the translationally invariant states in the phase diagram. 1997 Elsevier Science B.V. All rights reserved.     

Self-assembled nanocrystalline CdSe thin films

The topic of this contribution is the investigation of quantum states and quantum Hall effect in electron gas subjected to a periodic potential of the lateral lattice. The potential is formed by triangular quantum antidots located on the sites of the square lattice. In such a system the inversion center and the four-fold rotation symmetry are absent. The topological invariants which characterize different magnetic subbands and their Hall conductances are calculated. It is shown that the details of the antidot geometry are crucial for the Hall conductance quantization rule. The critical values of lattice parameters defining the shape of triangular antidots at which the Hall conductance is changed drastically are determined. We demonstrate that the quantum states and Hall conductance quantization law for the triangular antidot lattice differ from the case of the square lattice with cylindrical antidots. As an example, the Hall conductances of magnetic subbands for different antidot geometries are calculated for the case when the number of magnetic flux quanta per unit cell is equal to three.     

Integer quantum Hall effect in trilayer graphene

By using high-magnetic fields (up to 60 T), we observe compelling evidence of the integer quantum Hall effect in trilayer graphene. The magnetotransport fingerprints are similar to those of the graphene monolayer, except for the absence of a plateau at a filling factor of ν=2. At a very low filling factor, the Hall resistance vanishes due to the presence of mixed electron and hole carriers induced by disorder. The measured Hall resistivity plateaus are well reproduced theoretically, using a self-consistent Hartree calculations of the Landau levels and assuming an ABC stacking order of the three layers.     

On the Singular Effects in the Relativistic Landau Levels in Graphene with a Disclination

The effect of a pseudo Aharonov-Bohm (AB) magnetic field generated by a disclination on a two-dimensional electron gas in graphene is addressed in the continuum limit within the geometric approach. The influence of the coupling between the spinor fields and the singular conical curvature is investigated, which shows that singularities have pronounced impact in the Hall conductivity. Moreover, the degeneracy related to the Dirac valleys is broken for negative values of the angular momentum quantum numbers, l, includingl ≡ 0. In this case, a Hall plateau develops at the null filling factor. Obtaining the Hall conductivity by summing over the positive and the negative l's, the null Landau level is recovered and the plateau at the null filling factor disappears. In any case, the standard plateaus, which are seen in a flat graphene are not obtained with these curvature and singular effects.     

Mesoscopic effects in the quantum Hall regime

We report results of a study of (integer) quantum Hall transitions in a single or multiple Landau levels for non-interacting electrons in disordered two-dimensional systems, obtained by projecting a tight-binding Hamiltonian to the corresponding magnetic subbands. In finite-size systems, we find that mesoscopic effects often dominate, leading to apparent non-universal scaling behavior in higher Landau levels. This is because localization length, which grows exponentially with Landau level index, exceeds the system sizes amenable to the numerical study at present. When band mixing between multiple Landau levels is present, mesoscopic effects cause a crossover from a sequence of quantum Hall transitions for weak disorder to classical behavior for strong disorder. This behavior may be of relevance to experimentally observed transitions between quantum Hall states and the insulating phase at low magnetic fields.     

Effective pseudospin wave model for the coherent stripe phase in a bilayer system

Hartree–Fock theory predicts a stripe-like ground state for the two-dimensional electron gas in a bilayer quantum Hall system in a quantizing magnetic field at filling factor 4N+1 (with N>0). This stripe state contains quasi-1D linear coherent regions where electrons are delocalized across both wells and which support low-energy collective excitations in the form of phonons and pseudospin waves. We have recently computed the dispersion relation of these low-energy modes in the generalized random phase approximation. In this work, we propose an effective pseudospin model in which the stripe state is modeled as an array of coupled 1D anisotropic X–Y systems. The coupling constants and stiffness of our model are extracted from the density and pseudospin response functions computed in the GRPA.     

Spatial evolution of the generation and relaxation of excited carriers near the breakdown of the quantum Hall effect

We have measured the generation and relaxation of excited carriers along their drift direction near the breakdown of the quantum Hall effect (QHE). The dissipative resistivity ρ_xx(x) at current densities close to the critical value for the QHE breakdown was measured as a function of the distance x from the electron injection at x=0. By injecting “cold” electrons into constrictions at supercritical current levels, the evolution of the breakdown along the drift direction was monitored. After a smooth increase of the resistivity with the drifting distance, an avalanche-like rise towards a saturation value occurs. Drastic changes of the resistivity profiles with the applied current were found in a narrow range around the critical current. The observed behavior is attributed to impurity-assisted tunneling between Landau levels. By injecting hot electrons (excited in a periodic set of constrictions) into a region with subcritical current density, the relaxation process was analyzed. Inelastic relaxation lengths with typical values in the range from 0.3 to 4 μm were found, which agree within 10% with the elastic mean free path determined from the Hall mobility at zero magnetic field. We conclude that the energy relaxation process is triggered by scattering at impurity potentials.     

Nanomagnet coupled to quantum spin Hall edge: An adiabatic quantum motor

The precessing magnetization of a magnetic islands coupled to a quantum spin Hall edge pumps charge along the edge. Conversely, a bias voltage applied to the edge makes the magnetization precess. We point out that this device realizes an adiabatic quantum motor and discuss the efficiency of its operation based on a scattering matrix approach akin to Landauer–Büttiker theory. Scattering theory provides a microscopic derivation of the Landau–Lifshitz–Gilbert equation for the magnetization dynamics of the device, including spin-transfer torque, Gilbert damping, and Langevin torque. We find that the device can be viewed as a Thouless motor, attaining unit efficiency when the chemical potential of the edge states falls into the magnetization-induced gap. For more general parameters, we characterize the device by means of a figure of merit analogous to the ZT value in thermoelectrics.     

Current breakdown of the integer and fractional quantum Hall effects detected by torque magnetometry

We have developed a novel technique that enables measurements of the breakdown of both the integer and fractional quantum Hall effects in a two-dimensional electron system without the need to contact the sample. The critical Hall electric fields that we measure are significantly higher than those reported by other workers, and support the quasi-elastic inter-Landau-level tunnelling model of breakdown. Comparison of the fractional quantum Hall effect results with those obtained on the integer quantum Hall effect allows the fractional quantum Hall effect energy gap to be determined and provides a test of the composite-fermion theory. The temperature dependence of the critical current gives an insight into the mechanism by which momentum may be conserved during the breakdown process.     

Quantum Hall effect in intentionally disordered two‐dimensional electron systems

In this work intentionally disordered two‐dimensional electron systems in modulation doped GaAs/GaAlAs heterostructures are studied by magnetotransport experiments. The disorder is provided by a δ‐doped layer of negatively charged beryllium acceptors. In low magnetic fields a strong negative magnetoresistance is observed that can be ascribed to magnetic‐field‐induced delocalization. At increased magnetic fields the quantum Hall effect exhibits broad Hall plateaus whose centers are shifted to higher magnetic fields, i.e. lower filling factors. This shift can be explained by an asymmetric density of states. Consistently, the transition into the insulating state of quantum Hall droplets in high magnetic fields occurs at critical filling factors around ν_c=0.4, i.e. well below the value 1/2 that is expected for symmetric disorder potentials. The insulator transition is characterized by the divergence of both the longitudinal resistance as well as the Hall resistance. This is contrary to other experiments which observe a finite Hall resistance in the insulating regime and has not been observed previously. According to recent theoretical studies the divergence of the Hall resistance points to quantum coherent transport via tunneling between quantum Hall droplets. The magnetotransport experiments are supplemented by simulations of potential landscapes for random and correlated distributions of repulsive scatterers, which enable the determination of percolation thresholds, densities of states, and oscillator strengths for far‐infrared excitations. These simulations reveal that the strong shift of the Hall plateaus and the observed critical filling factor for the insulator transition in high magnetic fields require an asymmetric density of states that can only be generated by a strongly correlated beryllium distribution. Cyclotron resonance on the same samples also indicates the possibility of correlations between the beryllium acceptors.