Magnetoresistance of epitaxial SrRuO3 thin films on a flexible CoFe2O4-buffered mica substrate

We have investigated the magnetoresistance of epitaxial SrRuO₃ (SRO) thin films on a flexible CoFe₂O₄ (CFO)-buffered mica substrate. High-resolution X-ray diffraction and transmission electron microscopy revealed that the SRO film could be epitaxially grown on a mica substrate with a 22-nm-thick CFO buffer layer. The epitaxial relationships were SRO [1–10] || CFO [1–10] || mica [010] and SRO [111] || CFO [111] || mica [001]. Epitaxial SRO thin films exhibited two magnetoresistance (MR) peaks; one peak occurred at a Curie temperature of 160 K (HT-MR) and the other at a low temperature of 40 K (LT-MR). The LT-MR increased more rapidly with an increase of the buffer layer thickness than the HT-MR. The LT-MR was similar for the two orthogonal current directions with respect to the magnetic field. We explained the HT-MR and LT-MR in terms of the suppression of spin fluctuations and the magnetic rotation of crystallographic domains, respectively.     

Role of crystal orientation on the magnetic properties of CoFe2O4 thin films grown on Si (1 0 0) and Al2O3 (0 0 0 1) substrates using pulsed laser deposition

We report the influence of crystal orientation on the magnetic properties of CoFe₂O₄ (CFO) thin films grown on single crystal Si (1 0 0) and c-cut sapphire (Al₂O₃) (0 0 0 1) substrates using pulsed laser deposition technique. The thickness was varied from 200 to 50 nm for CFO films grown on Si substrates, while it was fixed at 200 nm for CFO films grown on Al₂O₃ substrates. We observed that the 200 and 100 nm thick CFO-Si films grew in both (1 1 1) and (3 1 1) directions and displayed out-of-plane anisotropy, whereas the 50 nm thick CFO-Si film showed only an (1 1 1) orientation and an in-plane anisotropy. The 200 nm thick CFO film grown on an Al₂O₃ substrate was also found to show a complete (1 1 1) orientation and a strong in-plane anisotropy. These observations pointed to a definite relation between the crystalline orientation and the observed magnetic anisotropy in the CFO thin films.     

Enhancement of in-plane magnetic anisotropy in (111)-oriented Co0.8Fe2.2O4 thin film by deposition of PZT top layer

The CoFe₂O₄ and Co_0.8Fe_2.2O₄ single layer (CFO) as well as PZT/CoFe₂O₄ and PZT/Co_0.8Fe_2.2O₄ bilayer thin films were grown using the pulsed laser deposition technique on Pt(111)/Si substrates at 600 °C. All films had a perfect (111)-orientation and the degree of orientation of CFO films was improved by the deposition of a PZT top layer. Precision X-ray diffraction analysis (avoiding the shift of peaks due to sample misalignment) revealed that the CFO films on Pt(111)/Si substrate were under an out-of-plane contraction and the deposition of a PZT top layer led to the increase in the out-of-plane contraction. The (111)-oriented CFO single layer films had a strong in-plane magnetic anisotropy as a result of orientation as well as the stress-induced magnetic anisotropy. The magnetic properties of CFO film were altered by the deposition of a PZT top layer leading to the enhancement of in-plane magnetic anisotropy. The enhanced in-plane magnetic anisotropy was more detectable in PZT/Co_0.8Fe_2.2O₄ rather than PZT/CoFe₂O₄ bilayer film, which could be expected from its higher magnetocrystalline as well as magnetostriction constants.     

Multiferroic properties of Bi0.8La0.2FeO3/CoFe2O4 multilayer thin films

Bi_0.8La_0.2FeO₃/CoFe₂O₄ (BLFO/CFO) multilayer thin films (totally 20 layers BLFO and 19 layers CFO) were prepared on Pt/Ti/SiO₂/Si substrates by pulsed laser deposition. X-ray diffraction and transmission electron microscope measurements show that the films are polycrystalline and consisted of multilayered structure. Ferroelectric hysteresis loops with remnant polarization and saturated polarization of 4.2 and 13.3 μC/cm², respectively, were observed. On the other hand, the films show well-shaped magnetization hysteresis loops with saturated and remnant magnetization of 34.7 and 11.4 emu/cm³, respectively, which are significantly larger than pure BLFO thin films deposited under the same conditions. These results indicate that constructing epitaxial superlattice might be a promising way to fabricate multiferroics with improved properties.     

Nonlinear magnetoelastic effects in ultrathin epitaxial FCC Co(0 0 1) films:: an ab initio study

Those linear and nonlinear magnetoelastic coupling coefficients which determine the magnetostrictive stress and the strain-induced out-of-plane magnetic anisotropy in epitaxially grown FCC Co(0 0 1) films are calculated by the ab initio density functional electron theory. The nonlinear couplings have a strong effect on the change Δσ₁^m of the in-plane magnetostrictive stress resulting from a change of the magnetization direction from [0 1 0] to [1 0 0], but a negligibly small effect on the out-of-plane anisotropy e_MCA. The calculations confirm the experimental result that the measured out-of-plane anisotropy cannot be totally attributed to volume magnetoelastic effects. Estimates are given for the nonlinear magnetoelastic coupling coefficients m₁^γ,2 and m₂^γ,2.     

Structural properties of high-quality sputtered Fe films on Al2O3(1120) and MgO(001) substrates

High-quality thin Fe films were deposited on MgO(001) and Al₂O₃(1120) substrates in the thickness range from 7 to 50 nm. The structural properties have been studied by out-of-plane and in-plane X-ray scattering experiments. From the out-of-plane measurements the electron density profile was determined together with interface and surface roughness parameters. Fe on Al₂O₃ grows along the [110]-direction with a structural coherence length comprising about the total film thick ness and a very small mosaicity. From in-plane scattering experiments a three-domain structure was observed. On MgO(001) substrates Fe grows in the [001]-direction, with the Fe [100]-axis parallel to the MgO [110]-axis. On both substrates, the Fe films exhibit a very small surface and interface roughness, indicative for a high quality of the sputtered samples.     

Growth of SrTiO3 on Si(001) by hybrid molecular beam epitaxy

We report the heteroepitaxial growth of SrTiO₃ thin films on Si(001) by hybrid molecular beam epitaxy (hMBE). Here, elemental strontium and the metal‐organic precursor titanium tetraisopropoxide (TTIP) were co‐supplied in the absence of additional oxygen. The carbonization of pristine Si surfaces during native oxide removal was avoided by freshly evaporating Sr into the hMBE reactor prior to loading samples. Nucleation, growth and crystallization behavior as well a structural properties and film surfaces were characterized for a series of 46‐nm‐thick SrTiO₃ films grown with varying Sr to TTIP fluxes to study the effect of non‐stoichiometric growth conditions on film lattice parameter and surface morphology. High quality SrTiO₃ thin films with epitaxial relationship (001)SrTiO₃ || (001)Si and [110]SrTiO₃ || [100]Si were demonstrated with an amorphous layer of around 4 nm thickness formed at the SrTiO₃/Si interface. The successful growth of high quality SrTiO₃ thin films with atomically smooth surfaces using a thin film technique with scalable growth rates provides a promising route towards heterogeneous integration of functional oxides on Si. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Dependence of magnetic characteristics on sputtering-power and substrate-temperature in amorphous Tb40(FeCoV)60 films

The amorphous Tb₄₀(Fe₄₉Co₄₉V₂)₆₀ films were deposited at different sputtering powers and substrate temperatures. The microstructural and magnetic characteristics were investigated by means of field emission scan electron microscope, magnetic force microscope and vibrating sample magnetometer. Our results show that with increasing sputtering power, out-of-plane coercivity decreases monotonically while saturation magnetization has a maximum value of 231 kA/m for the sample prepared at 50 W. The as-deposited alloy films are amorphous, whereas the coercivity and saturation magnetization are strongly dependent on the substrate temperature. An out-of-plane hysteresis loop with coercivity below 22 mT and saturation magnetization over 290 kA/m is obtained combining dc power and substrate temperature. The dominant mechanism of room temperature coercivity appears to be domain wall pinning, rather than nucleation under all conditions measured. The variation of saturation magnetization is similar to that of perpendicular magnetic anisotropy with either sputtering power or substrate temperature according to the difference of magnetic domain structure.     

SrTiO3(110) thin films grown directly on different oriented silicon substrates

We have grown (110)-oriented SrTiO₃ (STO) thin films on silicon without any buffer layer, by means of pulsed laser deposition technique. The crystal structures of the grown films were examined by X-ray diffraction analysis including θ–2θ scan and rocking curve as well as Laue diffraction methods. STO films with single (110) out-of-plane orientation were formed on all (100), (110) and (111)-oriented Si substrates. The in-plane alignments for the epitaxial STO films grown directly on Si (100) were found as STO[001]//Si[001] and STO[11̄0]//Si[010]. The results should be of interest for better understanding of the growth of perovskite oxide thin films on silicon wafers. PACS 77.55.+f; 68.55.JK; 81.15Fg     

Longitudinal relaxation of Fe nuclei in Yb-doped YIG

Measurements of T₁ for ⁵⁷Fe nuclei in Yb-doped YIG are reported for the temperature range 0·7–140 K, with the magnetization along the [111], [100], [110], and [112] crystallographic directions respectively. The dependence of T₁ on Yb concentration and on the magnitude of the applied field was also studied. These results are interpreted in terms of the ‘slow relaxation theory’, and are correlated with the ferrimagnetic resonance work of Clarke, Tweedale, and Teale, whose data have been reanalyzed by us. Both sets of data can be represented fairly well by the theory, with a consistent set of relevant parameters. However, the tensor G which describes the splitting of the Yb ground-state doublet must be modified somewhat from that deduced by Clarke et al., the new principal values being G₁ = 29·0 cm⁻¹, G₂ = 20·4 cm⁻¹ and G₃ = 8·5 cm⁻¹ respectively. Below approximately 10 K, when the magnetization is in the [110] or [112] direction, the nuclear relaxation rate is higher than predicted. These anomalies correspond to those observed in ferrimagnetic resonance line width, which have been attributed to Yb ions on the octahedral lattice sites normally occupied by iron. Anomalously large values of T⁻¹₁ are also observed below approximately 4 K in the [111] and [100] directions, and these remain to be accounted for.     

Magnetic anisotropy of epitaxial Fe layers grown on Si(0 0 1)

The magnetic properties of epitaxial iron films up to 80 monolayers (ML) thickness grown on Si(0 0 1) by using a template technique were investigated by means of superconducting quantum interference device and magneto-optic Kerr effect techniques. The thinnest films investigated (∼3 ML) exhibit a composition close to Fe₃Si with a Curie temperature below room temperature (RT) and strong out-of-plane remanent magnetization that reflects the presence of a dominant second order surface anisotropy term. Thicker films (⩾4 ML) are ferromagnetic at RT with remanent magnetization in film-plane and a composition closer to pure Fe with typically 8–10% silicon content. When deposited at normal incidence such films show simple in-plane fourfold anisotropy without uniaxial contribution. The relevant fourth-order effective anisotropy constant K₄^eff was measured versus film thickness and found to change its sign near 18 ML. The origin of this remarkable behavior is investigated by means of a Néel model and mainly traced back to fourth-order surface anisotropy and magneto-elastic effects related to the large biaxial in-plane compressive strain up to 3.5% in the thinnest (⩽25 ML) films.     

Thickness induced magnetic anisotropic properties of Tb-Fe-Co thin films

The influence of Tb₂₅Fe₆₁Co₁₄ thin film thicknesses varying from 2 to 300 nm on the structural and magnetic properties has been systematically investigated by using of X-ray diffraction, scanning electron microscopy, transmission electron microscopy, magnetization, and magneto-optic Kerr effect microscopy measurements. Thin film growth mechanism is pursued and controlled by ex-situ X-ray refractometry measurements. X-ray diffraction studies reveal that the Tb₂₅Fe₆₁Co₁₄ films are amorphous regardless of thin films thicknesses. The magnetic properties are found to be strongly related to thickness and preferred orientation. With an increase in film thickness, the easy axis of magnetization is reversed from in-plane to out-of-plane direction. The change in the easy axes direction also affects the remanence, coercivity and magnetic anisotropy values. The cause for the magnetic anisotropy direction change from in-plane to out-of-plane can be related to the preferred orientation of the thin film which depends on the large out-of-plane coercivity and plays an important role in deciding the easy axes direction of the films. According to our results, up to the 100 nm in-plane direction is dominated over the whole system under major Fe-Fe interaction region, after that point, the magnetic anisotropy direction change to the out-of-plane under major Tb-Fe/Tb-Co interaction region and preferred orientation dependent perpendicular magnetic anisotropic properties become more dominated with 2.7 kOe high coercive field values.     

Magnetization reversal in bulk and thin films of the ferrimagnetic ErCo0.50Mn0.50O3 perovskite

We present herein a comparison of the magnetic properties of bulk ceramics and thin films of the ferrimagnetic ErCo_0.50Mn_0.50O₃ compound. Epitaxial thin films were deposited onto (1 0 0) SrTiO₃ substrates by pulsed-laser ablation while bulk ceramics were prepared by solid state reaction. When cooling under low applied fields, a spin reversal is observed in both thin film and bulk due to the competition between two magnetic sublattices (Co/Mn and Er) coupled by a negative exchange interaction. Original features are observed in the M(H) loops for bulk materials: abrupt jumps at 4 T due to a reorientation of domains, while in the low field region, the increasing and decreasing branches of the magnetization intersect each other. In the thin film, the ordering temperature increased from 69 to 75 K, and the ZFC anomaly (AF transition) became sharper, compared to the bulk specimen. The oxygen content and the microstructure are crucial to observe the intersection of the magnetization branches.     

The first detection of photomodulation by both DC and in-phase AC susceptibility for organic/inorganic hybrid materials containing cyano-bridged Gd–Cr complex and azobenzene

New organic/inorganic hybrid material containing a ferrimagnetic cyano-bridged binuclear complex, [Gd(DMF)₄(H₂O)₃Cr(CN)₆]·H₂O (DMF=N,N′-dimethylformamide), and photochromic azobenzene in poly(methylmethacrylate) (PMMA) cast films has been prepared. We characterized magnetic properties of bulk [Gd(DMF)₄(H₂O)₃Cr(CN)₆]·H₂O and confirmed that it was not changed by light illumination at all. For the first time, we could detect reversible changes of both DC and in-phase AC susceptibility for the hybrid materials accompanying with cis–trans photoisomerization of azobenzene after UV and visible light illumination for 3 min at 3 K. We also discuss the kind of detectable magnetic changes (e.g. DC, in-phase AC, and both DC and in-phase AC) and the nature of some photo-magnetic functional hybrid materials (cis–trans photoisomerization and increase/decrease of magnetization) known to estimate their mechanism and interactions.     

Ferrimagnetic resonance spectra of magnetic bubble films at low microwave frequencies

Magnetic bubble films exhibit a number of ferrimagnetic resonance modes due to the spatial variation of the anisotropy. The resonance frequencies have been measured as a function of the applied bias fieldH ₀. In the lower field range the magnetization of the transient layer, which has negative anisotropy, is not yet parallel toH ₀. In this range the resonance frequencies are shifted to higher values due to pinning effects. In films grown by the vertical dipping method an additional layer on top of the transient layer is observed within which the magnetization rotates from the direction in the transient layer to that of the bulk of the film. In films grown by horizontal dipping no such layer could be detected. Each ferrimagnetic resonance mode excites transverse elastic waves in the film due to the magnetoelastic interaction and thus gives rise to elastic resonances of the whole crystal, film and substrate. These elastic resonances lead to a fine-structure of the ferrimagnetic resonances. The observed fine-structure vanishes periodically with frequency and from this behaviour the thickness of the magnetic film and of the transient layer has been determined.     

In-plane magnetization with high coercivity in terbium iron garnet thin films deposited on Pt/Si substrate by PLD

We report on the growth of terbium iron garnet (TbIG, Tb₃Fe₅O₁₂) thin films having anomalously large coercivity and in-plane easy axis of magnetization. The TbIG thin films were prepared at room temperature (RT) on Pt/Si(1 0 0) substrates by pulsed laser deposition technique. The films deposited at RT were X-ray amorphous and do not show any magnetic order. Annealing of the RT deposited film at 900 °C resulted into fully textured (532) TbIG film. Atomic force microscopy and cross-sectional scanning electron microscopy studies of the TbIG films showed good surface quality with an average surface roughness of 5.0 nm and thickness of about 300 nm, respectively. The M-H loops measured at 20 K for TbIG films, exhibit about an order of magnitude enhancement in the coercivity value (H_c) than the single crystal. In-plane and out-of-plane M-H loops revealed that the easy axis of the magnetization lies within the film’s plane. In-plane magnetization combining with large H_c value of the TbIG thin film may be of scientific interest for the possible applications.     

Magnetic properties of disordered ferrite and ilmenite-hematite thin films

We have synthesized thin films of disordered zinc ferrite (ZnFe₂O₄) and ilmenite-hematite (FeTiO₃-Fe₂O₃) solid solution, the former and the latter of which are interesting from the viewpoints of magnetooptics and spintronics, respectively, by utilizing sputtering and pulsed laser deposition methods, and have explored their magnetic, magnetooptical, and electrical properties. Although ZnFe₂O₄ possesses a normal spinel structure as its stable phase, some of the Fe³⁺ ions occupy the tetrahedral as well as the octahedral sites in ZnFe₂O₄ of which the sputtered thin film is composed. Consequently, the as-deposited thin film manifests large magnetization even at room temperature although the magnetic phase transition temperature of the stable phase of ZnFe₂O₄ is as low as 10 K. Also, the thin film exhibits a cluster spin glass transition at a temperature as high as 325 K. Furthermore, the ZnFe₂O₄ thin films exhibit large Faraday effects at a wavelength of 400 nm or so. The ilmenite-hematite solid solution is one of the ferrimagnetic semiconductors. Most of the compositions possess Curie temperatures higher than room temperature, and the type of carrier can be tuned only by changing the composition. We have succeeded in synthesizing solid-solution thin films of various compositions grown epitaxially on sapphire substrates with a (0 0 0 1) plane, and have shown that the thin films are ferrimagnetic semiconductors.     

Tunable magnetic anisotropy of CoFe2O4 nanopillar arrays released from BiFeO3 matrix

We deposited epitaxial BiFeO₃–CoFe₂O₄ (BFO–CFO) self‐assembled thin films on (001) SrTiO₃ (STO) substrates. We find that a combined annealing and etching process could remove the BFO matrix, thereby resulting in free‐standing CFO nanopillar arrays. Scanning electron and atomic force microscopies showed well separated CFO nanopillars, which were very similar to the original CFO ones in the self‐assembled structure. Finally, comparison of the magnetic hysteresis loops before and after removal of the BFO matrix showed a significant decrease of the coercive field and a dramatic decrease in the strain dominated magnetic anisotropy. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

On a quantum plateau of magnetization in metal-organic quasi-one-dimensional ferrimagnets

The possibility of realizing a quantum plateau of magnetization in [Mn(hfac)₂BNO_R] metal-organic compounds is investigated theoretically. A model of a one-dimensional ferrimagnetic chain (5/2, 1) is used for calculating the magnetization as a function of an external field by the method of discrete path integral representation (DPIR). Within this model, the coexistence of classical and quantum plateaus of magnetization is revealed. It is shown that the critical field H_c1 that destroys the classical plateau (ground-state magnetization) is determined by the optical gap in zero field, which is estimated by the matrix-product method and a numerical method of exact diagonalization (recursion method).     

2-2型磁电复合薄膜CoFe2O4/Pb(Zr0.53Ti0.47)O3静磁耦合

运用溶胶-凝胶法在Pt/Ti/SiO₂/Si基片上旋涂制备了2-2型CoFe₂O₄/Pb(Zr_0.53Ti_0.47)O₃磁电复合薄膜．制备的磁电薄膜结构为基片/PZT/CFO/PZT*/CFO/PZT,通过改变中间层PZT*溶胶的浓度,改变磁性层间距以及静磁耦合的大小．SEM结果表明,复合薄膜结构致密,呈现出界面清晰平整的多层结构．制备的复合薄膜具有较好的铁电与铁磁性能．实验还研究了静磁耦合对薄膜磁电性能的影响,结果表明,随着复合薄膜磁性层间距的减小,静磁耦合效应的增加,磁电电压系数有逐渐增大的趋势.