Effect of laser irradiation of C-V characteristics of electrodeposited Ag/Tl-2223/CdSe hetero-nanostructures

One of the innovative technological directions for the high-temperature superconductors has been persued by fabricating the heteroepitaxial multilayer structures such as superconductor-semiconductor heterostructures. In the present investigation, metal/superconductor/semiconductor (Ag/Tl-2223/CdSe) hetero-nanostructures have successfully been fabricated using dc electrodeposition technique and were characterized by X-ray diffraction (XRD), full-width at half-maximum (FWHM) and scanning electron microscopy (SEM) studies. The measurement of junction capacitance as a function of biasing voltage was used for the estimation of junction built-in-potential (V _D) and to study the charge distribution in a heterojunction. The Mott-Schottky plots were measured for each junction in dark and under the photo-irradiation. The effect of laser irradiation on C-V characteristics of hetero-nanostructure has been studied.     

Low-field vortex dynamics in various high-T c thin films

We present a novel ac susceptibility technique for the study of vortex creep in superconducting thin films. With this technique we study the dynamics of dilute vortices in c-axis oriented Y-123, Hg-1212, and Tl-1212 thin films, as well as a axis oriented Hg-1212 thin films. Results on the Hg-1212 and Tl-1212 thin films indicate that dislocation-mediated plastic flux creep of single vortices dominates at low temperatures and fields. As the temperature (or the field) is increased, the increasing vortex-vortex interactions promote a collective behavior, which can be characterized by elastic creep with a non-zero μ exponent. Also, in some of these samples effects of thermally assisted quantum creep are visible up to 45 K in some of these samples. In Y-123 thin films, creep is found to be collective down to the lowest temperatures and fields investigated, while the quantum creep persists only up to 10–11 K.     

Effect of substrate’s nature on the growth of HgBCCO thin films

The synthesis of HgBCCO films by spray pyrolysis on single crystals is investigated. It is shown that in conditions where the precursor is expected to give Hg-1223, Hg-1212 grows on LaAlO₃ (0 0 1) while Hg-1223 grows on MgO (0 0 1). The samples are analysed by X-ray pole figures, SEM and critical current measurements. Both samples were superconducting but the sample on MgO had a negligible I_c while 17 A was measured on LAO at 77 K (sf). These differences are analysed in terms of texture and microstructure and some conclusions concerning the growth are drawn. On LAO, the nucleation is probably epitaxial and the anisotropy of the growth inhibits the transformation into Hg-1223 while some interfacial contribution expected to occur on MgO makes this transformation easier.     

ZnS薄膜参数对有机/无机复合发光器件特性的影响

半导体量子点(QDs)具有发光效率高和发光波长可调等特点。采用胶体CdSe QDs作电致发光器件的有源材料,TPD(N,N′-biphenyl-N,N′-bis-(3-methylphenyl)-1,1′-biphenyl-4,4′-diamine)作空穴传输层,ZnS作电子传输层,研究了有机/无机复合发光器件ITO/TPD/CdSe QDs/ZnS/Ag的电致发光特性。TPD和CdSe QDs薄膜采用旋涂方法、ZnS薄膜采用磁控溅射方法沉积,器件表面平整。CdSe QDs的光致发光和电致发光谱峰位波长均位于～580 nm,属于量子点的带边激子发光。我们与以前的ITO/ZnS/CdSe QDs/ZnS/Ag发光器件结构进行了对比,发现新的器件结构的电致发光谱没有观察到QDs表面态的发光,而且新器件的发光强度是ITO/ZnS/CdSe QDs/ZnS/Ag结构的～10倍。发光效率的提高归因于碰撞激发与载流子注入两种发光机制并存的结果：一方面电子经过ZnS 层加速后,碰撞激发CdSe QDs发光;另一方面,空穴从TPD层注入CdSe QDs 与QDs中激发的电子复合发光。我们进一步研究了ZnS电子加速层厚度对发光特性的影响,选择ZnS薄膜的厚度分别是80,120 和160 nm,发现随着ZnS层厚度增大,器件启亮电压升高,EL强度增大,但是击穿电压降低。EL峰位随着ZnS厚度的减小发生明显蓝移,对上述实验现象进行了机理解释。     

Ag/InP Schottky结热退化机理的研究

Ag/InP Schottky结是制作TE场助光电阴极的关键,本文利用Auger分析技术,详细地研究了热处理对Ag/InPSchottky结界面特性的影响。实验结果表明高温长时间热处理会导致严重界面相互扩散,同时使Schottky结的势垒高度降低,理想因子增大,泡利负电性理论很好地解释了扩散效应。势垒高度的降低及理想因子的增大也是由界面互扩散造成的,这种扩散导致界面特性由Schotthy特性向欧姆性质转化。为防止界面互扩散及Schottky结特性的退化,可选用负电性小的金属制作Schottky结,并在工艺上尽量减少热处理的温度和时间。     

ZnS:Ag/CdS: a new family of color-tunable quantum dots

ZnS:Ag/CdS quantum dots (QDs) have been synthesized by a reverse micelle process under ambient environment. Excited by 350?nm, the emission peak of ZnS:Ag/CdS QDs changes from 425 to 625?nm with increasing the thickness of CdS shells. Although the quantum yields of QDs decrease with CdS shells thickening, the luminescent brightness remains stable throughout. Compared with the traditional color-tunable CdSe QDs, the synthesis of ZnS:Ag/CdS QDs is less toxic and more economic. Therefore, this synthesis process can be regarded as an efficient way to fabricate a series of luminescent nanostructures for a variety of applications.     

Electroluminescence of CdSe/CdS quantum dots and the transfer of the exciton excitation energy in an organic light-emitting diode

A light emitting diode has been developed on the basis of multilayer nanostructures in which CdSe/CdS semiconductor colloidal quantum dots serve as emitters. Their absorption, photo-, and electroluminescence spectra have been obtained. The strong influence of the size effect and the density of particles in the layer on the spectral and electrophysical characteristics of the diode has been demonstrated. It has been shown that the rates of the transfer of the exciton excitation energy from organic molecules to quantum dots increase strongly even at a small increase in the radius of the core (CdSe) of a particle and depend strongly on the thickness of the shell (CdS) of the particle. The optimal arrangement of the layer of quantum dots with respect to the p-n junction has been estimated from the experimental data. The results demonstrate that the spectral characteristics and rates of the electron processes in light-emitting devices based on quantum dots incorporated into an organic matrix can be efficiently controlled.     

Studies on fabrication of Ag/Tl2Ba2Ca2Cu3O10/CdSe heterostructures with electrochemical technique

The Ag/Tl₂Ba₂Ca₂Cu₃O₁₀/CdSe heterostructure was fabricated at room temperature by soft electrochemical processing technique for the first time. The formation of the heterostructure with non-diffusive interfaces was confirmed by X-ray diffraction. The crystallite sizes determined for Tl-2223 and CdSe films were 33 nm and 25 nm, respectively. The Tl₂Ba₂Ca₂Cu₃O₁₀ film electrodeposited onto Ag-substrate has shown the superconducting transition temperature T_c at 116.5 K and J_c = 2.1 × 10³ A/cm². These values were found to improve after the deposition of CdSe onto Ag/Tl-2223 films. The effect of red He-Ne laser irradiation on the superconducting properties of heterostructure are studied and discussed at length in this paper.     

Photoelectrochemical properties of electrodeposited CdSe and CdSe/ZnSe thin films in sulphide-polysulphide and ferro-ferricyanide redox systems

Polycrystalline, (111) textured single CdSe and binary CdSe/ZnSe thin films were prepared by electrodeposition and used as active electrodes in regenerative, liquid junction solar cells with aqueous sulphide-polysulphide or ferro-ferricyanide redox electrolytes. The influence of ZnSe on the photoelectrochemical properties of CdSe was investigated. Microchemical characterization of the cell ingredients was made by X-ray diffraction, scanning microscopy imaging and atomic absorption spectrophotometry. The semiconductor electrodes could behave as rectifying diodes within certain conditions, though cell operation was inevitably associated to chemical changes of the electrodes. Aspects of the corrosion effects are discussed and the stabilization of particular cells is demonstrated.     

Re-charging the luminescence states in CdSe/ZnS quantum dots at the conjugation to Osteopontin antibodies

The paper presents the original study of photoluminescence (PL) and Raman scattering spectra of core–shell CdSe/ZnS quantum dots (QDs) covered by the amine-derivatized polyethylene glycol (PEG) with luminescence interface states. First commercially available CdSe/ZnS QDs with emission at 640 nm (1.94 eV) covered by PEG polymer have been studied in nonconjugated states. PL spectra of nonconjugated QDs are characterized by a superposition of PL bands related to exciton emission in a CdSe core and to the hot electron–hole recombination via high energy luminescence states. The study of high energy PL bands in QDs at different temperatures has shown that these PL bands are related to luminescence interface states at the CdSe/ZnS or ZnS/polymer interface. Then CdSe/ZnS QDs have been conjugated with biomolecules—the Osteopontin antibodies. It is revealed that the PL spectrum of bioconjugated QDs changed essentially with decreasing hot electron–hole recombination flow via luminescence interface states. It is shown that the QD bioconjugation process to Osteopontin antibodies is complex and includes the covalent and electrostatic interactions between them. The variation of PL spectra due to the bioconjugation is explained on the basis of electrostatic interaction between the QDs and biomolecule dipoles that stimulates re-charging QD interface states. The study of Raman scattering of bioconjugated CdSe/ZnS QDs has confirmed that the antibody molecules have the electric dipoles. It is shown that CdSe/ZnS QDs with luminescence interface states are promising for the study of bioconjugation effects with specific antibodies and can be a powerful technique in biology and medicine.     

Molecular control over Ag/p-Si diode by organic layer

Electrical transport properties of Ag metal-fluorescein sodium salt (FSS) organic layer-silicon junction have been investigated. The current-voltage (I-V) characteristics of the diode show rectifying behavior consistent with a potential barrier formed at the interface. The diode indicates a non-ideal I-V behavior with an ideality factor higher than unity. The ideality factor of the Ag/FSS/p-Si diode decreases with increasing temperature and the barrier height increases with increasing temperature. The barrier height (φ_b=0.98 eV) obtained from the capacitance-voltage (C-V) curve is higher than barrier height (φ_b=0.72 eV) derived from the I-V measurements. The barrier height of the Ag/FSS/p-Si Schottky diode at the room temperature is significantly larger than that of the Ag/p-Si Schottky diode. It is evaluated that the FSS organic layer controls electrical charge transport properties of Ag/p-Si diode by excluding effects of the SiO₂ residual oxides on the hybrid diode.     

CdSe/ZnSe/ZnS多壳层结构量子点的制备与表征

展示了一种简捷的多壳层量子点合成路线。在含有过量Se源的CdSe体系中直接注入Zn源,"一步法"合成了CdSe/ZnSe量子点;进一步以CdSe/ZnSe为"核",表面外延生长ZnS壳层制备了核/壳/壳结构CdSe/ZnSe/ZnS量子点。相对于以往报道的多壳层结构量子点的制备方法,该方法通过减少壳层的生长步骤有效地简化了实验操作,缩短了实验周期,同时减少对原料的损耗。对量子点进行高温退火处理,能够大幅提高CdSe/ZnSe/ZnS量子点的发光量子产率。透射电镜、XRD以及光谱研究表明:所制备的量子点接近球形,核与壳层纳米晶均为闪锌矿结构,最终获得的CdSe/ZnSe/ZnS量子点的光致发光量子产率达到53％。为了实现量子点的表面生物功能化,通过巯基酸进行了表面配体交换修饰,使量子点表面具有水溶性的羧基功能团,并且能够维持较高的光致发光量子产率。     

Effect of branching of tetrapod-shaped CdTe/CdSe nanocrystal heterostructures on their luminescence

We have studied the CdTe/CdSe tetrapod-shaped nanocrystal heterostructures with the use of photoluminescence spectra measurements and time-correlated single photon counting technique. The tetrapods were grown to have CdTe arms with different thickness of the CdSe shell. We have observed non-exponential photoluminescence decay of excited tetrapod-nanocrystals and proposed kinetic theory based on the branched crystal morphology and on the assumption about a potential barrier in the junction point of tetrapod. Analysis of studied nanocrystal behavior gives an evidence for tetrapods to behave as four weakly connected quantum wells. This interesting effect might find applications in nanoelectronics.     

A novel two-phase thermal approach for synthesizing CdSe/CdS core/shell nanostructure

CdSe/CdS core/shell nanocrystals have been synthesized through a low cost and simple two-phase thermal route. The optical spectroscopy and structural characterization evidenced the core/shell structure of the CdSe/CdS nanoparticles. The X-ray diffraction patterns of CdSe and CdSe/CdS nanoparticles exhibited peak positions corresponding to those of their bulk cubic crystal structures. The X-ray photoelectron spectroscopy data confirmed the elemental composition of the CdSe/CdS nanoparticles. The absorption spectra of core/shell nanoparticles showed red shift with respect to the core CdSe nanoparticles. The photoluminescence study indicates that the intensity of the emission maximum is considerably increased in the core/shell structure as compared with the parent material, and the capping of CdS nanoparticles with CdSe material exhibit a near band-edge emission, indicating a successful passivation by removing surface defects. The high-resolution transmission microscope images of the bare and core/shell nanoparticles ascertained the monodispersed and well-defined spherical particles. The average particle sizes for CdSe and CdSe/CdS nanoparticles are 2.5 and 5 nm, respectively, thus confirming, the larger diameter of CdSe/CdS core/shell nanostructure than the core CdSe nanoparticles.     

CdSe/ZnSe核-壳结构纳米粒子合成新方法

报道用“一步”合成新方法制备了CdSe/ZnSe核-壳结构的发光纳米粒子.该方法是将锌的前驱体注入表面Se富集的CdSe发光纳米粒子溶液中,通过Zn²⁺与Se共价键结合,从而在CdSe发光纳米粒子的表面形成ZnSe壳.分别通过X射线粉末衍射、光电子能谱、透射电镜、紫外-可见吸收光谱和光致发光光谱,对核-壳结构的发光纳米粒子的结构及光学性质进行了表征.结果表明,以较宽带隙的ZnSe在较窄带隙的CdSe纳米粒子表面形成的壳层有效地钝化了CdSe纳米粒子的表面缺陷,明显地提高了室温下CdSe纳米粒子的光致发光效率.X射线粉末衍射表明随着Zn²⁺的不断注入,CdSe/ZnSe的衍射峰逐渐移向ZnSe衍射峰.光电子能谱数据显示,Zn2p的双峰分别位于1020,1040eV附近,通过与体材料ZnO相比,确定为Zn²⁺的光电子发射,说明Zn是以共价键形式存在于CdSe纳米粒子的表面.透射电镜照片显示纳米粒子具有良好的单分散性,核-壳结构的发光纳米粒子直径较CdSe核的直径明显增加.     

Stability and luminescence properties of CsPbBr3/CdSe/Al core-shell quantum dots

To improve the stability and luminescence properties of CsPbBr₃ QDs, we proposed a new core-shell structure for CsPbBr₃/CdSe/Al quantum dots (QDs). By using a simple method of ion layer adsorption and a reaction method, CdSe and Al were respectively packaged on the surface of CsPbBr₃ QDs to form the core-shell CsPbBr₃/CdSe/Al QDs. After one week in a natural environment, the photoluminescence quantum yields of CsPbBr₃/CdSe/Al QDs were greater than 80%, and the PL intensity remained at 71% of the original intensity. Furthermore, the CsPbBr₃/CdSe/Al QDs were used as green emitters for white light-emitting diodes (LEDs), with the LEDs spectrum covering 129% of the national television system committee (NTSC) standard color gamut. The core-shell structure of QDs can effectively improve the stability of CsPbBr₃ QDs, which has promising prospects in optoelectronic devices.     

Current–voltage and capacitance–voltage studies of nanocrystalline CdSe/Au Schottky junction interface

Journal of Nanoparticle Research - CdSe nanocrystalline thin films have been synthesized on indium tin oxide (ITO) substrates by an electrodeposition technique. A Schottky junction device in the...     

脂溶性CdSe/ZnS量子点脂质体复合物的制备及表征

在油相中成功合成了脂溶性CdSe/ZnS核壳量子点纳米粒,粒径平均为4.5 nm,量子产率达29%,发射波长为540 nm。通过薄膜分散法,以蛋黄卵磷脂、胆固醇为膜材,将脂溶性的CdSe/ZnS核壳量子点包覆于脂质体磷脂双分子层中,由于磷脂分子的两亲性,使得脂溶性的CdSe/ZnS核壳量子点同时又具有亲水性。通过透射电镜对脂质体形态进行了表征,倒置荧光显微镜证实了发光CdSe/ZnS核壳量子点成功包埋于脂质体双分子层中,包裹的发光CdSe/ZnS核壳量子点具有更稳定的发光及抗光漂白性质。     

Two-step annealed CdS/CdSe co-sensitizers for quantum dot-sensitized solar cells

CdS/CdSe co-sensitizers on TiO₂ films were annealed using a two-step procedure; high temperature (300 °C) annealing of TiO₂/CdS quantum dots (QDs), followed by low temperature (150 °C) annealing after the deposition of CdSe QDs on the TiO₂/CdS. For comparison, two types of films were prepared; CdS/CdSe-assembled TiO₂ films conventionally annealed at a single temperature (150 or 300 °C) and non-annealed films. The 300 °C-annealed TiO₂/CdS/CdSe showed severe coalescence of CdSe QDs, leading to the blocked pores and hindered ion transport. The QD-sensitized solar cell (QD-SSC) with the 150 °C-annealed TiO₂/CdS/CdSe exhibited better overall energy conversion efficiency than that with the non-annealed TiO₂/CdS/CdSe because the CdSe QDs annealed at a suitable temperature (150 °C) provided better light absorption over long wavelengths without the hindered ion transport. The QD-SSC using the two-step annealed TiO₂/CdS/CdSe increased the cell efficiency further, compared to the QD-SSC with the 150 °C-annealed TiO₂/CdS/CdSe. This is because the 300 °C-annealed, highly crystalline CdS in the two-step annealed TiO₂/CdS/CdSe improved electron transport through CdS, leading to a significantly hindered recombination rate.     

基于氢化物发生技术的CdSe量子点水相制备新方法研究及其用于银的高灵敏传感分析

报道了一种新型的利用氢化物发生技术水相合成高质量硒化镉量子点(CdSe QDs)的方法。通过将硼氢化钾与亚硒酸混合产生H_2Se气体,并将其可调控地引入到含镉溶液中,从而制备出化学性质稳定、荧光性能良好的CdSe量子点。所合成的量子点被成功应用于环境水样及细胞样品中痕量银的分析,分析检出限为0.005μg·mL~(-1),相对标准偏差小于2.7%(n=7),分析结果令人满意。该方法具有操作简单、稳定性好、灵敏度高、绿色环保等优点。