Optical and electron spin resonance spectra ofZ 2(Eu) centers in alkali halide crystals

The ESR spectra ofZ ₂(Eu)-centers in KBr and KCl are presented and correlated to the optical absorption and the electron spin resonance of the Europium vacancy complex. The fine structure of theZ ₂ spectra can be described by a Spin-Hamiltonian with an axialb ₂ ⁰ -parameter only. At room temperature it amounts to 1,761 10^–4 cm^–1 for KBr, 1,854 10^–4 cm^–1 for KCl and 1,453 10^–4 cm^–1 for RbCl. Accordingly theZ ₂(Eu)-center must posses a strict axial 100-symmetry in these crystals.     

Rates of change in high temperature electrical resistivity and oxygen diffusion coefficient in Ba2YCu3Ox

The change in electrical resistance with time for bulk, thick-film, and thin-film Ba₂YCu₃O_x at atmospheric pressure is described as a function of the oxygen partial pressure (100 to 0.001%) and temperature (320°–750°C). The potential usefulness of these materials as oxygen sensors is demonstrated. The rate of equilibration is faster during oxygen uptake than during its loss. Time constants to reach equilibration (1/e remaining), qualitatively scale with sample dimensions. For a 1m film at 600° C, <1 s for the range of P_O2 (O2 being a shorthand for O₂) from 100% to 0.001%. The rate increases markedly with increasing P_O2. The actual resistance decreases with P_O2 at a rate of log/log P_O2 = 0.4 at 700° C showing adequate sensitivity for sensor purposes. Times for the transient resistance change in the sample where used to estimate the oxygen diffusion coefficient in the ceramic. The diffusivities obtained are 4·10^–11–1·10^–12 cm²/s in the 435°–320° C range, with an activation energy of 27 kcal/mole.     

Single crystal EPR spectrum of Cr3+ in lanthanum lutecium gallium garnet

The Cr³⁺ EPR spectra of YAG type crystals normally consist of four peaks whose positions are dependent on the axial zero-field splitting D with axis along a 111 direction and angle between that direction and the applied field H ₀. In LLGG only three principal peaks are observed with zero-field axis nearly along x, y or z. This anomaly is attributed to the relatively small size of Cr³⁺ compared to Lu³⁺ which it displaces in an octahedral site. D varies slightly for the different zero-field axes: 0.480 cm^–1 along x, 0.429 cm^–1 along y and 0.470 cm^–1 along z. The spectroscopic splitting factor g=1.978±0.001 is essentially isotropic and independent of axes within the experimental error.     

Long-range correlations at depinning transitions

Semi-infinite systems are considered with long-range surface fields B _z ^–(1+r) for large distancesz from the surface. The influence of such fields on the global phase diagram and on the critical singularities of depinning transitions is studied within Landau theory. For |B|0, the correlation length diverges as b ^–1/2 withb=|Bln|B^–(1+r). For finiteB, t ^v withv =(2+r)/(2+2r) wheret measures the distance from bulk coexistence. In the latter case, a Ginzburg criterion leads to the upper critical dimensiond ^*=(2+3r)/(2+r).     

Femtosecond-pulse laser ablation of human corneas

A femtosecond pulse laser in the visible spectral region shows promise as a potentially new powerful corneal sculpting tool. It combines the clinical and technical advantages of visible wavelengths with the high ablation quality observed with nanosecond-pulse excimer lasers at 193 nm. A femtosecond and a nanosecond dye laser with pulse durations of 300 fs and 7 ns, and centre wavelengths at 615 nm and 600 nm, respectively, both focused to an area of the order of 10^–5 cm², have been applied to human corneal ablation. Nanosecond laser pulses caused substantial tissue disruption within a 30–100 m range from the excision edge at all fluences above the ablation threshold of F _th60 J cm^–2 (I _th9 GW cm^–2). Completely different excisions are produced by the femtosecond-pulse laser: high quality ablations of the Bowman membrane and the stroma tissue characterised by damage zones of less than 0.5 m were observed at all fluences above ablation threshold of F _th1 J cm^–2 or I _th3 TW cm^–2 (3×10¹² W cm^–2). The transparent cornea material can be forced to absorb ultrashort pulses of extremely high intensity. The fs laser generates its own absorption by a multiphoton absorption process.     

Saturation of resonant frequency conversion processes in cadmium vapour

We have investigated two-photon resonant up conversion of 375 to 159 nm coherent radiation using the four-frequency process ₁₅₉=2₃₇₅+₁₀₄₀ in cadmium vapour, where the ir component (1040 nm) is internally generated by the 375 nm pump tuned to the Cd two-photon transition 5s ^{2 1} S ₀5s6s ¹ S ₀. Scaling laws and tuning behaviour of both the 159 and 1040 nm output power were measured up to 1×10⁸ W cm^–2 pump intensity and 2×10¹⁷ cm^–3 Cd number density. The results are compared to numerical calculations based on semiclassical theory in a stationary perturbation approximation up to third order. Here, in accordance with experimental results, the ir component was assumed to originate from a superposition of stimulated emission and parametric generation. The observed saturation effects turned out to be mainly due to population changes of the atomic levels involved and are qualitatively reproduced by calculations. Discrepancies with respect to absolute output levels are discussed in terms of the approximations in the theoretical formalism.     

Europium luminescence in fluorite upon high-energy excitation

The reflection and luminescence excitation spectra of CaF₂ crystals containing europium ions in divalent (Eu²⁺) and trivalent (Eu³⁺) states were measured in the range from 4 to 16 eV. It was established that, in CaF₂ : Eu³⁺ crystals, luminescence of Eu³⁺ ions (the f-f transitions) is effectively excited both in the charge-transfer band (at ～8 eV) and in the region of the 4f–5d transitions (at ～10 eV) but is virtually not excited in the fundamental region of the crystal (at an energy higher than 10.5 eV). Luminescence of Eu²⁺ ions (the 427-nm band) in CaF₂ : Eu³⁺ is effectively excited in the fundamental region of the crystal; i.e., luminescence of divalent europium ions occurs through the trapping mechanism. Emission of Eu²⁺ ions in CaF₂ : Eu²⁺ crystals is characterized by the excitation band at an energy of 5.6 eV (the 4f → 5d,t _2g transitions), as well as by the exciton and interband luminescence excitations. The results obtained and data available in the literature are used to construct the energy level diagram with the basic electron transitions in the CaF₂ : Eu crystals.     

Shallow acceptor population and free hole concentration in Si: In and Si:Ga with IR-photoexcitation

Hall measurements at low temperaturesT<50 K have been performed on Si:In (N _In10¹⁷ cm^–3) and Si:Ga (N _Ga10¹⁸ cm^–3) with infrared photoexcitation of holes into the valence band. It is shown in quantitative agreement with a theoretical model that the population of shallow acceptors, e.g. B and Al, which are present as impurities in concentrations ofN _B,Al10¹²-10¹⁴ cm^–3 strongly affects the photoexcited hole concentration. Photo-Hall measurements can, therefore, serve as a tool for the determination of low impurity acceptor concentrations in the case of high In- or Ga-doping. Hole capture coefficientsB _In=6×10^–4 (T/K)^–1,8 cm³ s^–1 andB _Ga=2×10^–4 (T/K)^–1 cm³ s^–1 have been determined.     

Excitation of the 7s2P1/2, 3/2 levels of Xe+ due to charge exchange in the negative glow of a glow discharge in a neon-xenon mixture

It is shown that in the negative glow of a glow discharge in mixtures of neon with xenon (xenon contents of 5.5·10^–3 to 2% of the total pressure P of the mixture) with P=15 torr and discharge currents i=40 mA (cathode diameter 30 mm), the 7s²P_{1/2, 3/2} levels of the Xe⁺ ion are excited by the charge exchange reaction Xe ^m + Ne⁺ Xe^+* + Ne.The effective cross section Q_3/2 for excitation of the 7s²P_3/2 level is estimated to lie between 10^–14 and 10^–15 cm² and Q_3/26.5 × Q_1/2, where Q_1/2 is the effective cross section for excitation of the 7s²P_1/2 level.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii Fizika, No. 3, pp. 96–99, March, 1979.     

Sol–gel deposition and luminescence properties of lanthanide ion-doped Y2(1-x)Gd2xSiWO8 (0≤x ≤1) phosphor films

Y_2(1-x)Gd_2xSiWO₈:A (0x1; A=Eu³⁺, Dy³⁺, Sm³⁺, Er³⁺) phosphor films have been prepared on silica glass substrates through the sol–gel dip-coating process. X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), thermogravimetric and differential thermal analysis (TG-DTA), atomic force microscope (AFM), scanning electron microscopy (SEM) and photoluminescence spectra as well as lifetimes were used to characterize the resulting films. The results of the XRD indicated that the films began to crystallize at 800 °C and crystallized completely at 1000 °C. The AFM and SEM study revealed that the phosphor films, which mainly consisted of closely packed grains with an average size of 90–120 nm with a thickness of 660 nm, were uniform and crack free. Owing to an efficient energy transfer from the WO₄^2- groups to the activators, the doped lanthanide ion (A) showed its characteristic f–f transition emissions in crystalline Y_2(1-x)Gd_2xSiWO₈ (0x1) films. The optimum concentrations for Eu³⁺, Dy³⁺, Sm³⁺, Er³⁺ were determined to be 21, 5, 3 and 7 mol % of Y³⁺ in Y₂SiWO₈ films, respectively. The above lanthanide ions showed higher emission intensity for 02(1-x)Gd_2xSiWO₈ films. PACS 73.63.Bd; 78.55.Hx; 78.66.Nk; 81.15.Lm; 81.20.Fw     

Observed difference between the probabilities of recoilless resonance absorptionf′ and reemissionf″ of gamma-quanta in single crystals of Na2[Fe(CN)5NO]·2 H2O

The recoilless absorption probability factor,f, and recoilless reemission,f, both measured on Na₂[Fe(CN)₅NO]·2 H₂O single crystals using the black filter technique, were found to be different. Unexpectedly, the results found weref>f. In the calculation off, selfabsorption in the scatterer, non-ideality of the black filter and the influence of non-resonant scattering processes have all been taken into account. By varying the scattering geometry for the incoming and outgoing -beam relative to the crystallographic axes only a change in the reemitted valuesf _a, f_b, f_c could be detected because of the long lifetime of the excited nucleus (10^–7 s) relative to the lattice vibration frequencies (10¹² Hz).     

Theory of Raman scattering and infrared absorption by interacting phonon-magnon states in FeF2

It is shown theoretically that, in the presence of a strong magnetic field, effects due to the interaction betweenB _1g ,E _g,TA phonons and magnons should be important in the Raman and infrared absorption spectrum of FeF₂. As a result the two magnon line should split. A microscopic Hamiltonian for the interactions has been derived. The calculated values of theE _g phonon-one magnon interaction, 9.9 cm^–1, and of theB _1g phonon-two magnon coupling, 6.3 cm^–1, are comparable to those in FeCl₂2H₂O metamagnet, in which C phonon-magnon hybrydization has been observed [1]. It is shown that hybridization between two magnon andB _1g orTA phonon can occur in FeF₂ if the magnon energy approaches the phonon energy due to increasing magnetic field or increasing temperature.On the leave from Technical University, Pozna, Institute of Physics, Pozna 61–138 Piotrowo 3, Poland     

A μSR study of spin density wave condensation in Cr85Mo15

Zero field SR spectra from Cr₈₅Mo₁₅ are well described by the sum of a lightly damped (0.02s^–1<₁<0.2s^–1) and a heavily damped (2s^–1<₂<15s^–1) exponential. The temperature dependence of these components is discussed in relation to the condensation of the incommensurate spin density wave and the onset of the antiferromagnetic state in this Cr-like alloy below T_N=120K. Evidence is presented for the nucleation of the spin density wave at temperatures greater than 1.5T_N.     

Recombination of nonequilibrium current carriers in n-InAs1−x−ySbxPy

The stationary photoconductivity, the photomagnetic effect, and the relaxation kinetics of photoconductivity in n-InAs_1–x–ySb_xP_y crystals (x=0.06, y=0.11) with n₀ = 8·10¹⁵ and 3·10¹⁶ cm^–3 were measured and the lifetimes of nonequilibrium current carriers in the temperature interval T=78–295 K were determined. The possible mechanisms of recombination, which limit the lifetimes (radiative _R, Auger recombination _A, and recombination through centers with E_f=0.13 eV), which, as is demonstrated, are determined by interband recombination processes with _RA = _RA/(_R + _A), are calculated theoretically. The contribution of the 0.13 eV recombination centers can be significant when n₀10¹⁴ cm^–3.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 52–54, April, 1991.     

Semileptonic decays of the hypernucleus4HΛ

Two-channel type semileptonic decays of the hypernucleus⁴H are considered:⁴H_A ³H+p+^–+ and⁴H³He+n+^–+ . The particle energy spectra are computed taking into account the presence of strong interaction in the final state and the Pauli principle both in the direct and in the charge-exchange decay channels.The importance of the role played by interactions in forming the spectra of particles created in decays, is noted. Characteristic features of energy spectra and angular correlations of particles in the charge-exchange decay channel are discussed. The importance of such effects is noted for the dynamics of multichannel mesonless hypernuclear decays with similar energy release values.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 42–45, July, 1990.     

Submillimeter laser action of CW optically pumped CF2Cl2 (Fluorocarbon 12)

Eleven new CW far infrared (FIR) laser lines have been observed in the 600 m–1200 m range from the CF₂Cl₂ (Fluorocarbon 12) molecule optically pumped by a CO₂ laser. A 510^–4–10^–3 accuracy is achieved in the measurement of the FIR wavelengths.The frequency offset between the CO₂ pump center and the absorption line centers are measured using the transferred Lamb dip technique. Owing to a recent spectroscopic study of the CF₂ ³⁵Cl₂ molecule three lines may be assigned with great confidence as rotational transitions in thev ₆ vibrational band 923 cm^–1 of this main isotope.     

IR Reflection of Thin Bi4Ge3O12 Films

The spectra of IR reflection of the systems thin Bi₄Ge₃O₁₂ film–substrate made of molten -SiO₂ quartz in the region 10–1600 cm^–1 at 295 K are investigatedterpretation of fundamental vibrations in the region 10–800 cm^–1 and two phonon processes in the region 800–1600 cm^–1 are considered.     

Study of Nd2+ absorption in x-irradiated CaF2, SrF2, BaF2 crystals

The absorption spectra of x-irradiated alkaline-earth fluoride (CaF₂, SrF₂, BaF₂) crystals doped with Nd³⁺ ions have been investigated. X-irradiation results in creating the absorption bands of inter-configuration 4fⁿ–4fⁿ⁻¹–5 d¹ transitions of Nd²⁺. The charge reduction of the neodymium by irradiation is not temperature-stable and the ions reoxidation (Nd²⁺ → Nd³⁺) occurs under heating to 570 K in CaF₂, 520 K in SrF₂ and 470 K in BaF₂.     

The metal-semiconductor transition in amorphous Si1−x Cr x films:T 0.19-contribution to the metallic conductivity

A detailed phenomenological re-analysis of previously published conductivity data, (T, x), is presented. It is based on the investigation of differences, (T, x ₁)–(T, x ₂). In this way, the cusp-like low-temperature term is amplified against the other temperature dependent contributions. This term can be described by wherep=0.19±0.03. It is present, if (4.2 K,x) exceeds 260 ^–1 cm^–1, at least up to (4.2 K,x)1350 ^–1 cm^–1 and forT60 K. But it is absent, if (4.2 K,x)180 ^–1 cm^–1. The disappearance of this contribution should be related to the metal-semiconductor transition, taking place atx _c 0.14. On the other hand, the presence of a term proportional toT ^1/2, as predicted by Altshuler and Aronov, seems unlikely.It is argued that the term should be related to the interplay of electron-electron interaction and disorder. The comparison with data from the literature shows that this contribution might also be present in heavily doped crystalline semiconductors.     

Micro-Raman spectroscopy in polycrystalline CuInSe2 formation

The crystalline formation of CuInSe₂ thin films has been investigated using micro-Raman spectroscopy and AES composition analysis. It is confirmed that the Raman peaks are stongly dependent on the surface morphology and the Cu:In:Se ratio. In the films annealed at 315°C, crystalline grains larger than 2 m show Raman peaks at 174 cm^–1 and 258 cm^–1. The In content is very low and the Cu:Se ratio is about 1:1 in these grains. The low In concentration is thought to be due to the formation of In₂O₃ on the surface. On the other hand, random structures of 1–2 m grains found in films annealed at temperatures below 305°C show peaks at 174 cm^–1 and 186 cm^–1 instead of 258 cm^–1 and have a Cu:In:Se ratio of 1:1:3–4. Thus the 186 cm^–1 peak is thought to be related to a Cu, In-deficient phase when compared to stoichiometric CuInSe₂. The optimum annealing condition was found by analyzing the Raman spectra and composition of different crystalline CuInSe₂ grains. Films annealed under this condition exhibited a clear Raman peak at 174 cm^–1 and consisted of clusters of crystals less than 1 m in size.