Dislocations and their spatial configuration in amethyst crystals

Etch patterns produced on habit rhombohedral faces and rhombohedral cleavages of amethyst crystals are described and illustrated. Fidelity of etchants used is assessed. Also described are paired pits produced on match cleavages etched with the same or different etchants. By prolonged etching experiments it is established that the dislocations penetrate into the body of the crystal. Spatial distribution of dislocation in the body of the crystal is worked out. Uniformly spaced etch pits in an array observed on match cleavages (etched with different etchants) are attributed to low-angle tilt boundaries.     

Comparative study on BIS thiourea cadmium acetate crystals using HRXRD, etching, microhardness, UV-visible and dielectric characterizations

〈1 1 1〉 oriented bis thiourea cadmium acetate (BTCA) crystal of diameter 15 mm and length 45 mm was grown for the first time by the unidirectional Sankaranarayanan-Ramasamy (SR) method. The conventional and SR method grown BTCA crystals were characterized by using high-resolution X-ray diffraction (HRXRD), chemical etching, Vickers microhardness, UV-vis, dielectric studies and differential scanning calorimetry. The HRXRD analysis indicates that the crystalline perfection of SR method grown crystal is good without having any low angle internal structural grain boundaries. The transmittance of SR method grown BTCA is 14% higher than that of conventional grown crystal. The dielectric constant was higher and the dielectric loss was less in SR method grown crystal. The crystals grown by SR method possess less dislocation density and higher microhardness.     

Growth, structural, optical and electrical behavior of glycine potassium nitrate (GPN) crystal with non-linear optical response

New trapezoidal, non-linear optical crystals of glycine potassium nitrate (GPN) have been grown by slow cooling from solutions with an initial pH of 4.3. Chemical composition, phase formation and functional groups have been verified by CHN, EDAX, XRF, NMR, XRD, FTIR and Raman studies. UV studies show a much lower cut off wavelength (195 nm) compared to the much investigated glycine sodium nitrate (GSN). The powder SHG efficiency of GPN is found to be 0.6 times compared to that of potassium dihydrogen phosphate (KDP). Cut and polished crystals exposed to light indicate positive photoconductivity. Electrical conductivity studies show an activation energy of 0.16 eV and the dielectric loss is found to decay drastically at higher frequencies (1 MHz) which is desirable in electronic applications. Vickers microhardness studies indicate a Mayer's index value of 2.78. Well resolved, elongated and oriented etch pits have been observed on the side habit face (220) treated in glacial acetic acid for 5 s. Typical circular features resisting the formation of etch pits representing impurity elements have been observed on the cleavage faces. Moisture has been traced on the surface of the crystals subjected to heat treatment.     

钼晶体中存在有柏格斯矢量为〈100〉的位错的实验证据

实验结果表明:以乙二酸水溶液为电解浸蚀液,可以在钼单晶体表面上显示位错的浸蚀斑。选{100}面为观察面,沿三叉亚晶界定出了浸蚀斑密度。观测结果证实了不对称倾侧晶界的Read-shockley公式,由此确定了沿亚晶界排列的浸蚀斑与柏格斯矢量为<100>的刃型位错间的一一对应关系。 关键词：     

硅中位错与蚀斑的对应关系

通过实验肯定了硅单晶的化学侵蚀定向方法,找出抛光液的最佳配比及抛光时间。确定了所选定的位错侵蚀剂的侵蚀规范;此侵蚀剂对晶面无选择性,能显示出刃型和螺型位错,以及“新”、“旧”位错。通过长时间侵蚀、逐层侵蚀、劈裂面蚀斑的对应、小角晶界上蚀斑的观察、形变硅单晶中蚀斑排列以及弯曲形变样品中蚀斑密度与曲率半径间的关系的研究等方法,证明了用此侵蚀剂所得的蚀斑确实与位错一一对应。     

PbFe12O19单晶体中的位错蚀斑研究

应用50％HCl作为浸蚀剂,对助熔法生长的PbFe₁₂O₁₉单晶体的(0001)解理面进行了浸蚀,以显示位错蚀斑。根据蚀斑所具有的形态,将其进行了分类,并确定了各自对应的位错类型。应用Mathews等人提出的机制,解释了在(0001)基面上所观察到的位错蚀斑阵列。 关键词：     

Studies on optical,mechanical, dielectric properties of bisthiourea nickel bromide NLO single crystal

Bisthiourea nickel bromide (BTNB) single crystal has been grown by solution growth technique at room temperature. The crystal structure and lattice parameters were determined for the grown crystal by single crystal X-ray diffraction studies. Optical constants like band gap, refractive index, reflectance, extinction coefficient and electric susceptibility were determined from UV–vis-NIR spectrum. Nonlinear optical property was discussed to confirm the SHG efficiency of the grown crystal. The mechanical strength of the grown crystal was analyzed using Vickers microhardness tester. The dielectric constant and dielectric loss of bisthiourea nickel bromide are measured in the frequency range of 50 Hz to 5 MHz at different temperatures. The ac conductivity studies were carried out on bisthiourea nickel bromide crystals. In order to investigate the growth mechanism and surface features, etching studies are carried out for the crystal. Photoconductivity studies were carried out on bisthiourea nickel bromide crystals.     

Optical,etching, and interferometric studies on ferroelectric PbNb2O6

Optical, interferometric and etching studies of (001) surfaces of ferroelectric PbNb₂O₆ are presented. It is found that crystal growth takes place mainly by layer formation. The layer boundaries can be distinguished from the domain lines by interferometric studies. Thermal etch pits are found near 90° domain walls and the layer boundaries. The etching studies show that these pits are at the sites of dislocations, and it is deduced that no extensive motion of dislocation takes place at the Curie-temperature in the process of domain formation.     

Characterization studies on the additives mixed l-arginine phosphate monohydrate (LAP) crystals

l-arginine phosphate monohydrate (LAP), potassium thiocyanate (KSCN) mixed LAP (LAP:KSCN) and sodium sulfite (Na₂SO₃) mixed LAP (LAP:Na₂SO₃) single crystals were grown by slow cooling technique. The effect of microbial contamination and coloration on the growth solutions was studied. The crystalline powders of the grown crystals were examined by X-ray diffraction and the lattice parameters of the crystals were estimated. From the FTIR spectroscopic analysis, various functional group frequencies associated with the crystals were assigned. Vickers microhardness studies were done on {1 0 0} faces for pure and additives mixed LAP crystals. From the preliminary surface second harmonic generation (SHG) results, it was found that the SHG intensity at (1 0 0) face of LAP:KSCN crystal was much stronger than that of pure LAP.     

Comparison of physical properties of pure and doped new metal organic crystal Bisthiourea sodium nitrate (BTSN)

Single crystals of pure and Na⁺ doped Bisthiourea Sodium Nitrate (BTSN), semi organic crystal were grown by slow evaporation technique. The grown crystals were subjected to various studies such as single crystal X-ray diffraction (XRD), UV–vis studies, Fourier transform infrared (FTIR), TG–DTA, and Vickers's microhardness were also measured. Single crystal X-ray diffraction studies reveal the crystals belong to orthorhombic crystallographic system. The mechanical property of the grown crystal was determined by microhardness studies.     

Morphology and fluorescence spectra of rubrene single crystals grown by physical vapor transport

Rubrene single crystals with pentagon, hexagon, lath-like, and needle-like shape were grown by physical vapor transport. The morphology of surface and transect of rubrene crystals was characterized by optical microscope, atomic force microscope and scanning electron microscope. Monolayers and layer-like structures were observed on the rubrene crystal surface and in the interior of single crystals, respectively. Size and quality of rubrene crystals could be controlled by tuning growth parameters including source temperature, deposition temperature, and growth time. Compared with the emission peak at 555 nm of rubrene solution with the concentration of 10⁻⁵ M, the emission peak of rubrene single crystals is at 649 nm with a shift of 94 nm. Hexagon etching pits with typical ladder-like structure were also observed on the (1 0 0) crystal plane and the density of dislocation lines is about 10³ cm⁻².     

水热法合成KTP晶体的红外光谱研究

采用Nicolet 550型傅里叶变换红外光谱仪,对不同世代水热法合成KTP晶体的不同晶面进行了镜反射法红外光谱测试,与助熔剂法合成KTP晶体的红外光谱测试结果进行了比较,并估算了不同世代样品中羟基的浓度。测试主要针对水热法合成KTP晶体比较发育的(100)、(011)和(201)晶面,分基频区和指纹区两个区段进行。研究结果表明,水热法合成KTP晶体中OH-的伸缩振动存在明显的方向性特征,其中[100]方向吸收明显,并且其频率比助熔剂法合成KTP提高约30 cm-1。样品中的羟基浓度依世代逐代下降,羟基的存在抑制了KTP晶体的生长,提高原料纯度对于提高晶体质量有重要意义。     

Growth, structural, spectral, mechanical and dielectric characterization of RbCl-doped l-alanine hydrogen chloride monohydrate single crystals

Pure (undoped) and RbCl-doped LAHC single crystals were grown successfully by the solution method with the slow evaporation technique at room temperature. The grown crystals were colourless and transparent. The solubility of the grown samples were found out at various temperatures. The lattice parameters of the grown crystals were determined by the single crystal X-ray diffraction technique and the diffracting planes were indentified by recording the powder X-ray diffraction pattern. UV-visible transmittance studies were carried out for the grown samples. Chemical analysis and atomic absorption studies indicate the presence of rubidium in the doped LAHC crystals. Nonlinear optical studies reveal that the SHG efficiency increases when the LAHC crystal is doped with rubidium chloride (RbCl). From microhardness studies, it is observed that the RbCl-doped LAHC crystal is harder than the pure sample. It is observed that the dielectric properties of the LAHC crystal are altered when it is doped with rubidium chloride.     

Synthesis,crystal growth and characterization of novel semiorganic nonlinear optical crystal: Dichloro(beta-alanine)cadmium(II)

Semiorganic nonlinear optical material of dichloro(beta-alanine)cadmium(II) (DCBAC) have been synthesized and single crystals were grown by solvent evaporation method at room temperature. The lattice parameters of the grown crystals are determined by single crystal XRD. The modes of vibration of different molecular groups present in the sample were identified by the FTIR spectral analysis. Thermal stability of the crystal was investigated using thermo gravimetric analysis (TGA) and differential thermal analysis (DTA). The dielectric constants of the crystal were studied as a function of frequency and the results are discussed. The grown crystals are subjected to microhardness studies and the variation of the microhardness with the applied load is studied. The optical transmission spectra and second harmonic generation (SHG) were investigated to study its linear and nonlinear optical properties. The nonlinear optical (NLO) property of the crystal was confirmed by powder second harmonic generation (SHG) test. SHG efficiency is comparable to that of KDP.     

Defect structure in EuS single crystals grown from the melt

The defect structure in EuS single crystals grown form the melt is studied by etch pitting, scanning and high-voltage electron microscopy. Circular and square etch pits and a second phase in the shape of thin hexagonal platelets are observed by etching. Microprobe analysis indicates the platelets to consist of Eu metal. In the transmission electron microscope, smoothly curved dislocations and helical dislocations, small dislocation loops and inclusions associated with dislocations are observed. The possible origin of the detected dislocation structure is considered with reference to climb and glide processes occurring during cooling down the grown crystals. The results corroborate the glide geometry of the NaCl lattice for EuS. On leave from Institute of Physics, Academic Sinica, Peking, VR China     

Studies on growth,structural, optical and mechanical properties of xylenol orange dye admixtured l-arginine phosphate single crystal

Bulk single crystals of pure and xylenol orange (XO) admixtured l-arginine phosphate (LAP) were grown by slow cooling technique. The cell parameters and crystallinity of pure and dye admixtured LAP crystals were confirmed by single crystal and powder X-ray diffraction analyses. HRXRD analysis reveals the presence of xylenol orange dye in interstitial site of LAP crystal lattice and it confirms the crystalline perfection of grown crystals. The functional groups of grown crystals were confirmed by FTIR spectral analysis. UV–vis transmission studies show the characteristic absorption of xylenol orange admixtured LAP crystal. Vickers’ microhardness and laser damage threshold studies were carried out on these crystals. Kurtz and Perry powder test was conducted to measure the second harmonic generation efficiency of pure and dye admixtured LAP crystals.     

从昇华的NaCl蒸汽生长单晶体

半个世纪以来,从NaCl的蒸汽生长其单晶体的企图并没有得到正面的结果,解理面上的取向性结晶也尚未有超过数个分子层者。对于从溶液结晶出来时NaCl晶面发展的顺序,或者相对的重要性的研究已有肯定的结果。关于晶核或生长驼峰发端的位置从几率上看应在晶面何处的时尚理论未能从NaCl自溶液中结晶出来的实验加以证实或否定。为探索从蒸汽相生长NaCl单晶体的规律,本实验初步获得较大尺度的单晶体,并同时使取向性晶面上结晶达到1毫米以上的厚度。升华蒸汽来源于高纯度的从熔融体结晶出来的单晶体,并使母晶和结晶基面保持在近于NaC     

Correlation between growth of high-index faces, relative growth rates and crystallographic structure of crystal

According to contemporary crystal growth theories, crystals are bound by low-index faces which are the most slowly growing. However, high-index faces are observed in crystal habits more and more often. In this paper the growth of high-index faces is analysed from a crystallographic perspective. It is shown that the crystallographic structure of a given crystal, expressed by the trigonometric function of appropriate interfacial angles, influences to great degree the crystallisation process and the morphology of crystals, in particular the behaviour of high-index faces. Additionally, it is concluded that at particular crystallographic structure of a crystal, a given high-index face may exist in the habit and develop its size, although it grows much faster than the neighbouring faces. Received 31 July 2001     

硅中位错增殖的实验观察

用化学侵蚀法研究了在机械应力和热应力作用下硅中位错的增殖和非均匀成核。结果表明,在使位错增殖和成核作用上,热应力同机械应力是等效的。硅中小角晶界中的位错,原生孤立位错都能成为位错源;晶体内部的缺陷及表面蚀斑处的应力集中能够引起位错成核;硅中螺型位错能够通过交叉滑移机制发生增殖。对新生位错环空间分布的研究表明,Frank-Read机制可能是位错增殖的主要形式。位错能否发生增殖,主要决定于位错源所受分切应力的数值、晶体温度、位错本身的结构特点以及钉扎情况等。     

Ib型金刚石大单晶的限形生长

金刚石的限形生长有利于其后续加工.对于磨料级金刚石限形生长的研究已经比较透彻,但金刚石大单晶的限形生长尚缺乏全面系统的研究.本文以Fe Ni(64wt%:36wt%)合金为触媒,利用高温高压下的温度梯度法在5.6 GPa时对不同温度下分别沿(100)面和(111)面生长的Ib型金刚石大单晶的晶形进行了研究.研究表明:随着温度的升高,沿(100)晶面生长的金刚石大单晶的晶形分别为板状、塔状直至尖塔状,而沿(111)面生长的金刚石大单晶的晶形则分别为塔状和板状;分析了不同温度下分别沿(100)面和(111)面生长金刚石大单晶不同晶形高径比的变化情况.利用不同压力和温度下的金刚石大单晶合成实验绘制了沿(100)和(111)面生长金刚石大单晶的晶形在V形生长区域内的分布示意图,表明沿(111)面生长的金刚石大单晶V形区温度下限明显比以(100)面生长的高,而沿这两面生长金刚石大单晶的V形区温度上限差别并不明显.对不同生长面V形区温度上下限的差别进行了解释,据此实现了Ib型金刚石大单晶的限形生长.