Thermally stimulated luminescence of bismuth germanate ceramics with the benitoite,eulitine, and sillenite structures

Thermally stimulated luminescence (TSL) of Bi₂Ge₃O₉, Bi₄Ge₃O₁₂, and Bi₁₂GeO₂₀ and the primary components Bi₂O₃ and GeO₂ was studied under x-ray excitation. Thermal activation energies and frequency factors of trapping centers in the studied ceramics were determined. The relationships of TSL bands of the studied ceramics with maxima at 141–145 and 166–170 K and damage to the Ge sublattice and of TSL bands with maxima at 104–110 and 180–190 K and recombination processes in the Bi sublattice were demonstrated. Recombination processes causing luminescence upon nonequilibrium charge carrier release from trapping centers occur in structural complexes of similar configuration that contain the Bi ion in a nearest environment of O atoms. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 75, No. 3, pp. 359–364, May–June, 2008.     

Local Trapping Centers in the Ceramics of Eulytines

Thermally stimulated luminescence (TSL) of ceramics having the structure of eulytine Bi₄X₃O₁₂ (X = Si, Ge, Zr) on exposure to x-ray irradiation in the temperature region 80–400 K is studied. An analysis of the forms of the TSL curves implies that the recombination processes in the TSL peaks at 149 and 212 K in Bi₄Si₃O₁₂ ceramics and at 143 and 230 K in Bi₄Ge₃O₁₂ ceramics can be described by the linear kinetics. The spectral composition of TSL of the ceramics obtained is investigated, and the activation energy and frequency factors which correspond to the TSL maxima are determined by various methods. Based on common spectral and energy characteristics of TSL, a conclusion concerning the connection of TSL with recombination processes in common structural complexes of BiO₆ ^9– is drawn.     

Influence of Oxygen Vacancies on the Luminescence Spectra of Thin Bi4Ge3O12 Films

Luminescence spectra of thin Bi₄Ge₃O₁₂ films annealed in air and in vacuum have been investigated. It has been established that the luminescence spectra for different forms of excitation consist of three bands with maxima at 2.70, 2.40, and 2.05 eV. The relation of the bands with maxima at 2.40 and 2.05 eV to the centers that incorporate an oxygen vacancy has been shown. The separated emission bands have been interpreted.     

IR Reflection of Thin Bi4Ge3O12 Films

The spectra of IR reflection of the systems thin Bi₄Ge₃O₁₂ film–substrate made of molten -SiO₂ quartz in the region 10–1600 cm^–1 at 295 K are investigatedterpretation of fundamental vibrations in the region 10–800 cm^–1 and two phonon processes in the region 800–1600 cm^–1 are considered.     

Cd3Al2Ge3O12:Mn2+锗酸盐石榴石光谱性质

本文报道室温下Cd₃Al₂Ge₃O₁₂:Mn²⁺(简称CAGG:Mn²⁺)锗酸盐石榴石的漫反射光谱、激发和发射光谱.在UV光激发下,在CAGG中Mn²⁺离子发射强黄光,这是基质到Mn²⁺离子无辐射能量传递的结果.Mn²⁺的黄发射带是由一个弱的红带和一个强的绿带所组成.讨论了这两个Mn²⁺发射带的起因.     

掺杂的Bi4Ge3O12晶体的近红外发光性能

生长了Mg、Ca离子掺杂(提拉法)和Cl离子掺杂(坩埚下降法)的Bi₄Ge₃O₁₂(BGO)晶体,测试了晶体样品的吸收谱、光致发光谱和发光衰减时间等。这些掺杂的BGO晶体的可见光发光比纯BGO有所减弱,但在808 nm和980 nm激光二极管(LD)激发下出现了纯BGO几乎没有的近红外发光,归因于改变了能级的Bi离子或可能出现的低价态Bi离子。掺杂对近红外发光的影响跟掺杂离子价态有关,同价态的掺杂离子对近红外发光的影响相差不大。     

Coherent optical phonon generation in Bi3Ge4O12

Time-domain spectroscopy of coherent optical phonons in bismuth germinate (Bi4Ge3O12) is presented. Utilizing both impulsive stimulated Raman scattering and time-domain terahertz spectroscopy, more than 12 unique vibrational states ranging in frequency from 2 to 11 THz are identified, each with coherent lifetimes ranging from 1 to 20 ps. These modes are highly sensitive to crystal orientation and demonstrate frequency shifts on picosecond timescales consistent with an anharmonic lattice potential.     

Anomalous magnetism and 209Bi nuclear spin relaxation in Bi4Ge3O12 crystals

The quadrupole ²⁰⁹Bi spin–spin and spin–lattice relaxation were studied within 4.2–300 K for pure and doped Bi₄Ge₃O₁₂ single crystals which exhibit, as was previously found, anomalous magnetic properties. The results revealed an unexpectedly strong influence of minor amounts of paramagnetic dopants (0.015–0.5 mol.%) on the relaxation processes. Various mechanisms (quadrupole, crystal electric field, electron spin fluctuations) govern the spin–lattice relaxation time T ₁ in pure and doped samples. Unlike T ₁, the spin–spin relaxation time T ₂ for pure and Nd-doped samples was weakly dependent on temperature within 4.2–300 K. Doping Bi₄Ge₃O₁₂ with paramagnetic atoms strongly elongated T ₂. The elongation, although not so strong, was also observed for pure and doped crystals under the influence of weak (～30 Oe) external magnetic fields. To confirm the conclusion about strong influence of crystal field effects on the temperature dependence of T ₁ in the temperature range 4.2–77 K, the magnetization vs. temperature and magnetic field was measured for Nd- and Gd-doped Bi₄Ge₃O₁₂ crystals using a SQUID magnetometer. The temperature behavior of magnetic susceptibility for the Nd-doped crystal was consistent with the presence of the crystal electric field effects. For the Gd-doped crystal, the Brillouin formula perfectly fitted the curve of magnetization vs. magnetic field, which pointed to the absence of the crystal electric field contribution into the spin–lattice relaxation process in this sample.     

Structural phase transition due to La substitution in Bi4Ti3O12

The structure of Bi_4?x La _x Ti₃O₁₂ (BLaTx) as a function of La content from x = 0.00 to 1.25 was studied by Raman spectroscopy and X-ray diffraction (XRD). It was observed that the Raman modes evolve discontinuously at about x = 1.00, which indicates a structural phase transition. Specifically, the B _2g and B _3g Raman modes shown evidences to coalesce into E _g modes with increasing La content. The evolution of Raman modes corresponds to the weakening of ferroelectric orthorhombic lattice distortion with increasing La substitution when x ≤ 1.00 and the final transition into the paraelectric tetragonal structure at higher La content. XRD and electrical measurement results confirm this phase transition by the observation that diffraction peaks from (200) and (020) planes of BLaT0.75 coalesce into one peak in BLaT1.25 and by the corresponding disappearance of remanent polarisation. The impact of La substitution on electrical properties of BLaTx is discussed briefly.     

Fundamental absorption edge of thin films of Bi4Si3O12

The fundamental absorption edge of thin films of Bi₄Si₃O₁₂ is investigated. On the basis of its temperature dependence, exciton-phonon interaction is investigated, which made it possible to interpret the absorption edge as the absorption of autolocalized excitons. The temperature dependence of the forbidden band width is given. I. Franko Lvov State University, 50, Dragomanov St., Lvov, 290005, Ukraine. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 2, pp. 232–235, March–April, 1997.     

Photochromic behaviour of doped Bi4Ge3O12 single crystal scintillators

The changes induced by ultraviolet (UV) illumination on the optical absorption and electron paramagnetic resonance (EPR) spectra of Bi₄Ge₃O₁₂ single crystals, doped either with Fe (and Gd) or Mn, have been followed at room temperature (RT). In both crystals several overlapping optical absorption bands develop under UV illumination, covering from 0.7 eV up to the band edge of the matrix. The optical damage can be bleached by heating the samples above RT or by illumination with visible light. Although these optical changes temporarily correlate with the variation of the Gd³⁺ and Mn²⁺ concentrations, it has been concluded that other defects are present and partially responsible for the optical damage.     

Luminescence of Thin Bi2W2O9 Films

The luminescence spectra of thin Bi₂W₂O₉ films have been investigated. The spectra were separated into elementary components by the Alentsev–Fock method. The radiation band with a maximum at 2.43 eV in the luminescence spectrum of Bi₂W₂O₉ has been assigned to the Frenkel autolocalized excitons. The luminescence bands with maxima at 2.10 and 1.90 eV have been assigned to the emission of the centers whose energy levels are located in the forbidden band. The luminescence of the Bi₂W₂O₉ films is due to the emission of the WO₆ complex.     

Bi4Ge3O12晶体及其掺杂晶体的拉曼光谱研究

利用拉曼光谱分别对Bi4 Ge3O12(BGO)晶体以及BGO:Pb(0.02 wt%),BGO:Al(0.02 wt%)进行了分析研究.测得的拉曼光谱显示,掺杂晶体对比纯的BGO晶体,在某些特征峰处,相对强度发生改变.此外,对于掺杂的晶体,部分拉曼特征峰会有偏移.因此,可以通过测定拉曼光谱来判定样品是否含有杂质.     

Optical absorption and luminescence for radiation defects in Bi4Ge3O12 crystals

Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 52, No. 3, pp. 400–405, March, 1990.     

Thermally stimulated luminescence studies of undoped,Cu- and Mn-doped CaSO4 compounds

Thermally stimulated luminescence (TSL) of undoped and doped CaSO₄ with activators such as Cu and Mn has been investigated. The polycrystalline samples of undoped and doped CaSO₄ are prepared by the melting method. The formation of CaSO₄ compound is confirmed by X-ray diffraction and Fourier transform infrared studies. Scanning electron microscopic studies of CaSO₄ are also carried out.

The TSL glow curves of undoped CaSO₄, Cu- and Mn-doped CaSO₄ are studied. Comparison of the thermoluminescence (TL) intensity of the most intensive glow peak of Cu-doped CaSO₄ compound with that of undoped CaSO₄ shows that addition of Cu impurity in CaSO₄ compound enhances the TL intensity by about four times. However, the addition of Mn impurity to undoped CaSO₄ increases the TL intensity by about three times when compared with that of undoped CaSO₄. The TL-dose dependence of all three samples was studied and was observed to be almost linear in the studied range of irradiation time. Among the samples studied, namely undoped CaSO₄ and Cu- and Mn-doped CaSO₄, Cu-doped CaSO₄ is found to be the most sensitive. The trap parameters, namely order of kinetics (b), activation energy (E) and frequency factor (s) associated with the most intensive glow peaks of CaSO₄:Mn, CaSO₄:Cu and CaSO₄ phosphors were determined using the glow curve shape (Chen's) method.