Co-doped In2O3 thin films: Room temperature ferromagnets

Laser-ablated Co-doped In₂O₃ thin films were fabricated under various growth conditions on R-cut Al₂O₃ and MgO substrates. All Co:In₂O₃ films are well-crystallized, single phase, and room temperature ferromagnetic. Co atoms were well substituted for In atoms, and their distribution is greatly uniform over the whole thickness of the films. Films grown at 550 °C showed the largest magnetic moment of about 0.5 μ_B/Co, while films grown at higher temperatures have magnetic moments of one order smaller. The observed ferromagnetism above room temperature in Co:In₂O₃ thin films has confirmed that doping few percent of magnetic elements such as Co into In₂O₃ could result in a promising magnetic material.     

Microstructure of epitaxial SrRuO3 thin films on MgO substrates

SrRuO₃ thin films have been grown on singular (1 0 0) MgO substrates using pulsed laser deposition (PLD) in 30 Pa oxygen ambient and at a temperature of 400-700 °C. Ex situ reflection high-energy electron diffraction (RHEED) as well as X-ray diffraction (XRD) θ/2θ scan indicated that the films deposited above 650 °C were well crystallized though they had a rough surface as shown by atom force microscopy (AFM). XRD Φ scans revealed that these films were composed of all three different types of orientation domains, which was further confirmed by the RHEED patterns. The heteroepitaxial relationship between SrRuO₃ and MgO was found to be [1 1 0] SRO//[1 0 0] MgO and 45°-rotated cube-on-cube [0 0 1] SRO//[1 0 0] MgO. These domain structures and surface morphology are similar to that of ever-reported SrRuO₃ thin films deposited on the (0 0 1) LaAlO₃ substrates, and different from those deposited on (0 0 1) SrTiO₃ substrates that have an atomically flat surface and are composed of only the [1 1 0]-type domains. The reason for this difference was ascribed to the effect of lattice mismatch across the film/substrate interface. The room temperature resistivity of SrRuO₃ films fabricated at 700 °C was 300 μΩ cm. Therefore, epitaxial SrRuO₃ films on MgO substrate could serve as a promising candidate of electrode materials for the fabrication of ferroelectric or dielectric films.     

Transport and magnetic properties of La0.8Ce0.2MnO3 thin films grown by pulsed laser deposition

We report on the growth of La_0.8Ce_0.2MnO₃ thin films on (0 0 1) LaAlO₃ substrates by pulsed laser deposition. CeO₂ as an impurity is present in both the bulk and film samples. The electrical transport and magnetic properties of the films are similar to that of the divalent cation-doped or La deficient LaMnO₃, which show colossal magnetoresistance. Thermopower measurements indicate that the carriers are holes. The results are explained in terms of a La site deficiency due to the existence of CeO₂.     

Magneto-optical parameters of Co90Fe10 and Co50Fe50 ferromagnetic thin films for 1.3 μm integrated isolator

In order to optimize a 1.3 μm integrated optical isolator using a CoFe alloy for the non-reciprocal magneto-optical (MO) transverse Kerr effect, we have measured the optical and magneto-optical indices of Co₉₀Fe₁₀ and Co₅₀Fe₅₀ alloys grown in the Al₂O₃/Al/CoFe/GaAs multilayer structure. The optical reflectivity and MO rotation and ellipticity measurements were performed at variable incidence angle and s and p polarization of the incident light. In order to determine the optical and MO indices, the experimental data were fitted using a Matlab implementation of a standard multilayer Yeh formalism including multiple reflections. This original procedure allows precise determination of the optical and MO indices of CoFe alloys.     

Ferromagnetism in epitaxial orthorhombic YMnO3 thin films

Epitaxial orthorhombic YMnO₃ thin films, (0 0 1) oriented, have been grown by pulsed laser deposition on (0 0 1)SrTiO₃ substrates. Their crystal structure and magnetic response have been studied in detail. Although bulk o-YMnO₃ is antiferromagnetic, our magnetic measurements reveal intriguing thermal hysteresis between the zero-field-cooled and field-cooled curves below the onset of the antiferromagnetic ordering temperature, thus signaling a more complex magnetic structure with net ferromagnetic moments. We discuss on the possible origin of this net magnetization and we have found a correlation of the magnetic response with the strain state of the films. We propose that substrate-induced strain modifies the subtle competition of magnetic interactions and leads to a non-collinear magnetic state that can thus be tuned by strain engineering.     

Improved initial epitaxial growth of superconducting YBa2Cu3O7 thin films on Y–ZrO2 substrates with a La1.85Sr0.15CuO4 buffer layer

Epitaxial thin films of YBa₂Cu₃O₇ (YBCO) have been deposited on Y–ZrO₂ (YSZ) substrates by means of the pulse laser deposition technique. It has been found that the initial epitaxy of YBCO thin films grown on YSZ can be significantly improved by using La_1.85Sr_0.15CuO₄ (LSCO) as a buffer layer. X-ray diffraction measurements show that the epitaxial YBCO films have single in-plane orientation with YBCO [100]LSCO [100] and LSCO [100]YSZ [110]. The real-time resistance measurements reveal that with LSCO buffer layers the initial formation of the YBCO ultra-thin films changes from the island growth to the layer-by-layer growth.     

Magnetic properties of Mn-substituted GdCoxMn1−xO3 and LaCoxMn1−xO3

Partial substitution of manganese by cobalt in rare-earth perovskites REMnO₃ leads to unusual magnetic phenomena because of the simultaneous presence of Mn³⁺, Mn⁴⁺, Co²⁺ and Co³⁺ species. The magnetic nature of the RE cation plays a fundamental role in the magnetic properties. We present herein two specific families: for RE=La the magnetic behavior of the |Co+Mn| network is observed, while for Gd its strong magnetic moment interacts with the transition metals, leading to a spin reversal state. Magnetic interactions are maximized at x=0.50, as if two regimes exist: for x<0.5 Co substitutes Mn in the REMnO₃ manganite, and for x>0.5 Mn substitutes Co in the RECoO₃ cobaltite.     

Growth of the Bi2O3 thin films under atmospheric pressure by means of halide CVD

Films of Bi₂O₃ were grown on glass substrate under atmospheric pressure by means of halide chemical vapour deposition (AP-HCVD) using BiI₃ and O₂ as the starting materials. In the XRD diffractogram of the film a strong diffraction peak appears at 27.91° assigned to the (111) diffraction of the δ-Bi₂O₃ with cubic structure. X-ray pole figure suggested that the 〈111〉 direction of the film is perpendicular to the substrate surface, while the 〈110〉 axis directs towards all directions parallel to the substrate surface. It is for the first that δ-Bi₂O₃ film was prepared on glass substrate.     

Film thickness dependence of the magnetic resonance in Fe–SiO2 nanocomposites

The magnetic properties of Fe–SiO₂ nanogranular composite thin films were studied as a function of film thickness and Fe concentration, f, using ferromagnetic resonance at X-band (9.4 GHz) and Q-band (35 GHz). Films with an Fe volume percent ranging from 17% to 70% were fabricated from a mosaic target using RF sputtering techniques. Film thickness was varied between 10 and 200 nm. From measurements made at room temperature with the external field applied parallel and perpendicular to the film plane, it was possible to determine an almost linear dependence of the effective anisotropy field with Fe concentration. Small differences observed between X- and Q-band, specially at low f, were attributed to the effects that the different fields applied during the experiment cause on the magnetic state of the sample. No systematic change of the effective field or the g value was observed in films of different thickness. The absorption line width, on the other hand, was found to depend on film thickness indicating a larger distribution of particle shape and size with increasing film thickness. A maximum in the line width was observed around f30–35% and is probably caused by the transition from single domain ferromagnetic clusters to superparamagnetic particles.     

Strain effects in epitaxially grown La0.7Sr0.3MnO3 thin films

We report here on an X-ray absorption study of La_0.7Sr_0.3MnO₃ films epitaxially grown on SrTiO₃ substrate. The local organization around Mn in oriented films with 600 Å in thickness was investigated by polarized Extended X-ray Absorption Fine Structure. The angle between electric field vector and film surface was set equal to 5° and 70° to investigate almost independently the contribution of the manganese neighbors situated in and out of the film plane. The first neighboring shell oxygen is found to be the same in both geometries, but small changes in the next neighboring contribution are observed. These changes are associated with variation in the Mn–Mn bond length. A small in-plane elongation (3%) is observed in the constrained films with respect to the unconstrained case.     

Crystalline orientation of BiMnO3 thin films grown by rf-sputtering

BiMnO₃ thin films were deposited by means of rf-sputtering onto [1 0 0] oriented SrTiO₃ substrates. X-ray diffraction measurements revealed epitaxial growth with [0 0 l]_m orientation in the monoclinic structure representation, equivalent to the direction of the pseudocubic cationic lattice. This [0 0 l]_m orientation was obtained in a wide deposition parameters range. Preliminary magnetization measurements suggest that these films do not present ferromagnetism below the bulk Curie temperature, T_C=105 K.     

Atomic layer deposition of Cr2O3 thin films: Effect of crystallization on growth and properties

Atomic layer deposition of Cr₂O₃ thin films from CrO₂Cl₂ and CH₃OH on amorphous SiO₂ and crystalline Si(1 0 0) and -Al₂O₃() substrates was investigated, and properties of the films were ascertained. Self-limited growth with a rate of 0.05–0.1 nm/cycle was obtained at substrate temperatures of 330–420 °C. In this temperature range epitaxial eskolaite was formed on the -Al₂O₃() substrates. The predominant crystallographic orientation in the epitaxial films depended, however, on the growth temperature and film thickness. Sufficiently thick films grown on the SiO₂ and Si(1 0 0) substrates contained also the eskolaite phase, but thinner films deposited at 330–375 °C on these substrates were amorphous. The growth rate data of films with different phase composition allowed a conclusion that the crystalline phase grew markedly faster than the amorphous phase did. The amorphous, polycrystalline and epitaxial films had densities of 4.9, 5.1 and 5.1–5.3 g/cm³, respectively.     

Impact of anisotropic strains on low-frequency dielectric properties and room-temperature polar phases of SrTiO3 epitaxial thin films

Impact of anisotropic strains on low-frequency dielectric properties and room-temperature polar phases of SrTiO₃ epitaxial thin films is investigated. The dielectric properties show a remarkable change as a function of anisotropic strains. The number of room-temperature polar phases is as twice as that of isotropically strained SrTiO₃ thin films.     

Determination and analysis of dispersive optical constants of CuIn3S5 thin films

CuIn₃S₅ thin films were prepared from powder by thermal evaporation under vacuum (10⁻⁶ mbar) onto glass substrates. The glass substrates were heated from 30 to 200 °C. The films were characterized for their optical properties using optical measurement techniques (transmittance and reflectance). We have determined the energy and nature of the optical transitions of films. The optical constants of the deposited films were determined in the spectral range 300-1800 nm from the analysis of transmission and reflection data. The Swanepoel envelope method was employed on the interference fringes of transmittance patterns for the determination of variation of refractive index with wavelength. Wemple-Di Domenico single oscillator model was applied to determine the optical constants such as oscillator energy E₀ and dispersion energy E_d of the films deposited at different substrate temperatures. The electric free carrier susceptibility and the ratio of the carrier concentration to the effective mass were estimated according to the model of Spitzer and Fan.     

Photoluminescence of polycrystalline CuIn0.5Ga0.5Te2 thin films grown by flash evaporation

Polycrystalline CuIn_0.5Ga_0.5Te₂ films were deposited by flash evaporation from ingot prepared by reacting, in stoichiometric proportions, high purity Cu, In, Ga and Te elements in vacuum sealed quartz. The as-obtained films were characterized by X – ray diffraction (XRD), transmission electron microscopy (TEM) combined with energy dispersive spectroscopy (EDS). XRD and TEM results showed that the layer has a chalcopyrite-type structure, predominantly oriented along (112) planes, with lattice parameters a?=?0.61?nm and c?=?1.22?nm. The optical properties in the near - infrared and visible range 600–2400?nm have been studied. The analysis of absorption coefficient yielded an energy gap value of 1.27?eV. Photoluminescence analysis of as-grown sample shows two main emission peaks located at 0.87 and 1.19?eV at 4?K.     

Photoexpansion and photobleaching effects in oxysulfide thin films of the GeS2+Ga2O3 system

Oxysulfide systems undergo structural transformations upon illumination with laser light of near bandgap energy, as well as chalcogenide materials (glasses and films). In this paper, photoinduced effects such as photoexpansion and photobleaching were observed in GeS₂+Ga₂O₃ (GGSO) films synthesized by electron beam evaporation. A surface expansion of the thin films and a shift to shorter wavelengths of the optical absorption edge were observed as a result of UV laser irradiation (wavelength of 351 nm) and they are dependent on laser power density, exposure time and film composition. These parameters were varied to evaluate and enhance the observed effects. In addition, the irradiated GGSO samples exhibited a decrease in refractive index, measured with a prism-coupling technique, which makes these films suitable candidates for applications as gratings and waveguides in integrated optics.     

Studies on the influence of lithium incorporation in the photoluminescence of Y2O3:Eu thin films

Nanostructured europium-doped yttrium oxide thin films with lithium as a co-dopant were prepared using pulsed laser ablation technique. X-ray diffraction studies of the films indicated amorphous nature of the as deposited films and a transformation to crystalline phase with increase of annealing temperature. In this transformation, lithium co-doped films showed early crystallization. Lithium substitution resulted not only in enhancement of photoluminescence at 612 nm, resulting from ⁵D₀-⁷F₂ transition within europium, but also found to reduce the required processing temperature for intense photoemission. The deviation observed in the value of lattice constant of films annealed at different temperatures is found to be sensitive to annealing temperature. In the light of this, the dependence of photoluminescence intensity on the magnitude of lattice imperfection is also discussed. The morphology and transmittance of the films are also found to be sensitive to annealing process and lithium doping.     

Electrophoretic deposition of BaTiO3/CoFe2O4 multiferroic composite films

Electrophoretic deposition was utilized for preparation of BaTiO₃/CoFe₂O₄ multiferroic composite thick films on indium-tin oxide substrates. The suspensions for electrophoretic experiments were prepared by dispersing BaTiO₃ and CoFe₂O₄ nanoparticles with different molar ratios into solvents composed of ethanol and acetylacetone. Polyvinyl butyral was added to the suspensions in order to enhance the adhesion and strength of deposit and prevent cracking. The zeta potential values of BaTiO₃/CoFe₂O₄ suspensions were measured to be 26.4-36.9 mV. The experiment results showed that deposited films were obtained only when the applied electric field was larger than a certain critical value. XRD and SEM analysis depicted the presence of constituent phases in composite films. The percolation threshold of composite films was improved through dispersing ferromagnetic phase into ferroelectric phase. Therefore, the ferroelectric properties of composite thick films were maintained when the ferromagnetic properties were enhanced significantly with increasing CFO content.     

Vibrational spectroscopic studies on Ba0.8Sr0.2TiO3 thin films prepared by RF sputtering technique

Thin films of Ba_0.8Sr_0.2TiO₃ have been deposited on p-type Si substrate by radio frequency magnetron sputtering. Polycrystalline bulk Ba_0.8Sr_0.2TiO₃ sample has also been studied for comparison. X-ray diffraction patterns reveal that both the bulk sample and thin films are polycrystalline without any preferential orientation and belong to paraelectric cubic phase. We have compared the room temperature Raman and IR spectra of powder and thin films (both annealed and as-deposited) of Ba_0.8Sr_0.2TiO₃. The extra feature in the Raman spectrum for the annealed film has been explained as due to the presence of intergrain stresses from the submicron size grains in it.