Laser-induced voltage effects in Ca3Co4O9 thin films on tilted LaAlO3（001） substrates grown by chemical solution deposition

Laser-induced voltage effects in c-axis oriented Ca3Co4O9 thin films have been studied with samples fabricated on 10 tilted LaAlO3(001) substrates by a simple chemical solution deposition method. An open-circuit voltage with a rise time of about 10 ns and full width at half maximum of about 28 ns is detected when the film surface is irradiated by a 308-nm laser pulse with a duration of 25 ns. Besides, open-circuit voltage signals are also observed when the film surface is irradiated separately by the laser pulses of 532 nm and 1064 nm. The results indicate that Ca3Co4O9 thin films have a great potential application in the wide range photodetctor from the ultraviolet to near infrared regions.     

Fir josephson photoresponse of tilted c-axis epitaxial YBa2Cu3O7-δ

YBa₂Cu₃O_7- thin films may be epitaxially grown, on suitably prepared substrates, with a non-zero tilt angle between the film's c-axis and its surface normal. These films are fast, room-temperature, thermoelectric detectors with a response extending from UV to FIR wavelengths. We have found that tilted c-axis films, when cooled below T_c, also exhibit a fast and sensitive Josphson photoresponse to 250 µm and 496 µm radiation, in contrast to the nil response of c-axis normal films. It is believed that the non-zero component of the radiation electric field along the c-axis of tilted films modulates relatively weak Josephson critical currents in this direction, generating a photoresponse from current biased samples.     

Optimization of large-area YBa2Cu3O7-δ thin films by pulsed laser deposition for planar microwave devices

This paper presents high quality YBa₂Cu₃O_7-δ(YBCO) thin films on LaAlO₃ substrate for microwave devices prepared by pulsed laser deposition(PLD). The double-sided YBCO films cover a large area and have been optimized for key parameters relevant to microwave device applications, such as surface morphology and surface resistance(Rs).This was achieved by improving the target quality and increasing the oxygen pressure during deposition, respectively. To ev...     

Microstructure,optical,and photoluminescence properties ofβ-Ga2O3films prepared by pulsed laser deposition under different oxygen partial pressures

Theβ-Ga₂O₃films are prepared on polished Al₂O₃(0001)substrates by pulsed laser deposition at different oxygen partial pressures.The influence of oxygen partial pressure on crystal structure,surface morphology,thickness,optical properties,and photoluminescence properties are studied by x-ray diffraction(XRD),atomic force microscope(AFM),scanning electron microscope(SEM),spectrophotometer,and spectrofluorometer.The results of x-ray diffraction and atomic force microscope indicate that with the decrease of oxygen pressure,the full width at half maximum(FWHM)and grain size increase.With the increase of oxygen pressure,the thickness of the films first increases and then decreases.The room-temperature UV-visible(UV-Vis)absorption spectra show that the bandgap of theβ-Ga₂O₃film increases from4.76 e V to 4.91 e V as oxygen pressure decreasing.Room temperature photoluminescence spectra reveal that the emission band can be divided into four Gaussian bands centered at about 310 nm(~4.0 e V),360 nm(~3.44 e V),445 nm(~2.79 e V),and 467 nm(~2.66 e V),respectively.In addition,the total photoluminescence intensity decreases with oxygen pressure increasing,and it is found that the two UV bands are related to self-trapped holes(STHs)at O1 sites and between two O2-s sites,respectively,and the two blue bands originate from V_Ga^2-at Ga1 tetrahedral sites.The photoluminescence mechanism of the films is also discussed.These results will lay a foundation for investigating the Ga₂O₃film-based electronic devices.     

Growth and transport features of electron-doped superconductor Pr1-xLaCexCuO4-δ thin films

<正>T’-phase electron-doped superconductor Pr_1-xLaCe_xCuO_4-δ（PLCCO） thin films are successfully prepared on SrTiO₃（100） substrates by using the dc magnetron sputtering method.It is found that the films each have a highly oriented structure along the c-axis.For optimally doped films with x≈0.10,the superconducting transition temperature T_c is 23.5 K,which is similar to that of a single crystal.The quadratic temperature dependence of the resistivity is observed when T > T_c,which can be attributed to the two-dimensional Fermi liquid behaviour.Besides,the optimal conditions for preparing the T’-phase PLCCO thin films are also discussed in detail.     

YBa2Cu3O7-δ熔融织构样品的磁响应研究

对YBa₂Cu₃O_7-δ熔融织构样品在不同温度、不同磁场不同外场扫描速率下进行了磁滞回线测量,获得了电流密度J(T,B),lnE-lnJ曲线以及热激活能U₀(T,B)随温度、磁场的变化关系,从而分析了该样品磁响应特性,特别是第二峰(简称峰)受外场扫描速率的影响,探讨了峰形成的真正原因,以及影响峰位置、大小的各种因素 关键词： 磁响应 熔融织构 峰效应 临界电流密度     

High-Temperature Superconducting YBa2Cu3O7-δ Josephson Junction Fabricated with a Focused Helium Ion Beam

As a newly developed method for fabricating Josephson junctions, a focused helium ion beam has the advantage of producing reliable and reproducible junctions. We fabricated Josephson junctions with a focused helium ion beam on our 50 nm YBa₂Cu₃O_7-δ（YBCO） thin films. We focused on the junction with irradiation doses ranging from 100 to 300 ions/nm and demonstrated that the junction barrier can be modulated by the ion dose and that within this dose range, the junct...     

Enhanced flux pinning in pulsed laser deposited Y Ba2Cu3O7−δ : BaTiO3 nanocomposite thin films

The effect of incorporation of BaTiO₃(BTO) nanoparticles on the flux pinning properties of pulsed laser deposited YBCO:BTO thin films was studied. Substantial increase in the critical current density (J_C) and the pinning force density (F_p) of the nanocomposite thin films was observed. At 77 K, and zero applied magnetic field, the value of J_C for YBCO and YBCO:BTO (2%) thin films were 2.93 MA/cm² and 6.43 MA/cm², respectively. At the same temperature and an applied magnetic field of 4 T, the value of J_C increases from 3.6×10⁴ A/cm² for YBCO thin film to 2.7×10⁵ A/cm² for YBCO:BTO (2%) nanocomposite thin film. The study of temperature and field dependence of of YBCO and YBCO:BTO thin films indicates similar type of pinning. The lattice mismatch between YBCO and BTO seems to introduce more defects resulting in the improvement of flux pinning properties.     

水腐蚀下YBa2Cu3O7-δ块体微观结构以及性能变化

本文系统性地研究了长期的水环境对YBa₂Cu₃O_7-δ(YBCO)超导体的影响.我们的研究发现,YBCO块体的水腐蚀从表面开始,发展到内部.测试中发现YBCO与水反应生成Y₂BaCuO₅、毒性BaCO₃、CuO等,而这个腐蚀行为似乎是从晶粒中提取Ba和Cu,并将Y浓缩到晶粒中心.在77 K温度下,未与水接触的样品的临界电流密度达到22500 A/cm²,而浸入水中50小时的样品仅为6000 A/cm²(甚至低于前者的三分之一).不仅如此,受腐蚀过后的YBCO块的磁化率也严重减弱.虽然临界转变温度并未有较明显的改变,但水腐蚀对YBCO超导的影响无疑是非常致命的,因此,我们建议在相关设备的使用或储存过程中应注意水的来源并杜绝与之接触.     

YBa2Cu3O7-δ薄膜微结构的同步辐射三维倒空间扫描研究

高温超导薄膜因其微波表面电阻低,可用于尖端高温超导微波器件的制作.然而由于高温超导材料特殊的二维超导机制和极短的超导相干长度,高温超导材料的微波表面电阻对微结构特别敏感.为了探究高温超导材料微结构和微波电阻的联系,采用脉冲激光沉积(PLD)技术在(001)取向的MgO单晶衬底上生长了不同厚度的YBa₂Cu₃O_7-δ(YBCO)薄膜.电学测量发现不同厚度的样品超导转变温度、常温电阻差别不大,但超导态的微波表面电阻差异很大.同步辐射三维倒空间扫描(3D-RSM)技术对YBCO薄膜微结构的表征表明:CuO₂面平行于表面晶粒(c晶)的多寡、晶粒取向的一致性是造成超导态微波表面电阻差异的主要原因.     

YBa2Cu3O7－δ/SrNb0.01Ti0.99O3 p-n结的制备及其特性

采用脉冲激光沉积技术，在n型SrNb001Ti099O3(SNTO)单晶基片上生长p型YBa2Cu3O7-δ(YBCO)薄膜，制备出YBCO/SNTO p n结.YBCO薄膜是高度c轴织构的超导薄膜，且具有良好的超导电性.YBCO/SNTO p n结具有较好的整流特性和很好的温度与磁场稳定性. 关键词： YBa2Cu3O7-δ SrNb001Ti099O3 p n结     

Effect of granularity and inhomogeneity in excess conductivity of YBa2Cu3O7−δ+xBaTiO3 superconductor

Synthesis of polycrystalline YBCO+xBaTiO₃ (x=1.0, 2.5, 5.0) superconductor has been done and the effects of granularity and inhomogeneities due to inclusions of nano-BaTiO₃ in excess conductivity are reported in this work. The phase formation, texture and grain alignments were analyzed through XRD and SEM techniques. SEM results reveal that the grain size is reduced and morphology is improved with the incorporation of nano-BaTiO₃ particles. Superconducting order parameter fluctuation (SCOPF) studies on the electrical conductivity were investigated from the resistivity vs. temperature data in the experimental domain relatively above T_c. Log(Δσ) vs. log(ε) plots show that the 2D to 3D crossover temperature (T_LD) that demarcates dimensional nature of fluctuation inside the grains is influenced by BaTiO₃ incorporation in YBCO matrix. An upward shift of T_LD in the mean field region has been observed as a consequent dominance of 3D region with increase in 1 wt% BaTiO₃ in the composites as compared to higher inclusions. It has been analyzed that microscopic inhomogeneities produced as a result of diffusion of a fraction of Ti ions into the grains affect fluctuations in the excess conductive region. The interplay of microscopic inhomogeneities produced inside the grains and mesoscopic inhomogeneities in the grain boundaries on the excess conductivity has been explained in terms of thermal fluctuations for the composites.     

NdBa2Cu3O7-δ/YBa2Cu3O7-δ多层膜体系的外延结构和磁通钉扎的研究

采用脉冲激光沉积技术,在单晶SrTiO₃基底上外延生长了一系列名义结构为p×(NdBa₂Cu₃O_7-δ(m)/YBa₂Cu₃O_7-δ(n))的多层膜和准多层膜(单元层NdBa₂Cu₃O_7-δ较厚而YBa₂Cu₃O_7-δ呈非连贯的岛状分布,m,n为激光脉冲数,p为重复周期).样品的超导转变温度在87—91 K范围,具体大小取决于不同的调制结构,多层膜的重复周期越大,层状界面越多,超导转变温度就越低.磁传输测量表明,准多层的样品不仅具有较高的超导转变温度,而且具有较强的磁通钉扎性能,77K零场下的临界电流密度高达4×10⁶ A/cm²,显示出良好的应用前景. 关键词： 2Cu₃O_7-δ')" href="#">NdBa₂Cu₃O_7-δ 多层膜 磁通钉扎 临界电流密度     

Epitaxial growth of YSZ buffer layer for YBa2Cu3O7−δ coated conductor by reel-to-reel pulsed laser deposition

Yttria-stabilized zirconia (YSZ) buffer layers were deposited on CeO₂ buffered biaxially textured Ni-W substrate by reel-to-reel pulsed laser deposition (PLD) for the application of YBa₂Cu₃O_7−δ (YBCO) coated conductor and the influence of substrate temperature and laser energy on their crystallinity and microstructure were studied. YSZ thin films were prepared with substrate temperature ranging from 600 to 800 °C and laser energy ranging from 120 to 350 mJ. X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM) were used to investigate how thin film structure and surface morphology depend on these parameters. It was found that the YSZ films grown at substrate temperature below 600 °C or laser energy above 300 mJ showed amorphous phase, the (0 0 1) preferred orientation and the crystallinity of the YSZ films were improved with increasing the temperature, but the surface roughness increased simultaneously, the SEM images of YSZ films on CeO₂/NiW tapes showed surface morphologies without micro-cracks. Based on these results, we developed the epitaxial PLD-YSZ buffer layer process at the tape transfer speed of 3-4 m/h by the reel-to-reel system for 100 m class long YBCO tapes.     

高温超导YBa2Cu3O7-δ-Y2O3多层薄膜的制备及性能表征

采用脉冲激光沉积技术(PLD)在LaAlO3(100)单晶衬底上外延生长YBa2Cu3O7-δ-Y2O3多层薄膜,用X射线衍射技术(XRD)分析薄膜的物相结构和外延特性,通过原子力显微镜(AFM)观察薄膜的表面形貌.本文主要研究了最佳工艺参数下交替生长多层YBCO-Y2O3膜的超导性能.结果表明,YBa2Cu3O7-δ-Y2O3薄膜为纯c轴取向外延生长,临界电流密度Jc(H=0或H//C)均高于纯YBCO薄膜,纳米Y2O3起到磁通钉扎中心作用.     

弱场下熔融织构YBa2Cu3O7-δ样品局域磁通蠕动的实验研究

利用半导体霍尔探头测量法在液氮温度下研究了低场下圆柱状熔融织构YBa₂Cu₃O_7-δ样品的局域磁通蠕动行为.对瞬时加减场样品端面局域磁场的磁弛豫,磁滞回线以及不同扫场速率下局域磁场的变化进行了测量,观察到了对数时间磁弛豫的行为,发现由加场和去场数据所得的激活能U₀有明显的不同.磁滞回线测量中,局域点的磁场随外场几乎同步变化,不同扫场速率下局域磁场随外场变化的差别不大.实验结果表明,外场除对样品侧面外,对端面也有明显的穿 关键词： 局域磁通蠕动 激活能 磁弛豫     

基于低温光声光谱技术的YBa2Cu3O7-δ超导转变过程

利用低温光声系统实时采集高Tc超导材料超导转变过程光声信号,是高Tc超导材料超导机理研究的一种新的实验方法。选取YBa₂Cu₃O_7-8超导体作为试样,分别构建常态→超导态（试样降温过程）和超导态→常态（试样升温过程）,得到转变过程光声信号对比图,并依据光声光谱图对试样失超现象作出可能的解释。     

Connection of Residual Losses of a Microwave Energy in Superconducting State of YBa2Cu3O7?δ Films on Sapphire Substrates with Their Resistance in a Normal State

In the work, the results of measurements of temperature dependence of the surface resistance Rs(T) of the YBa₂Cu₃O_– epitaxial films deposited on sapphire substrates have been presented. The films were obtained using the method of impulse laser deposition. The measurements of surface impedance Rs(T) have been carried out at a frequency of 135 GHz. It is shown that Rs(T) agrees with existing model, considering heterogeneity in the YBa₂Cu₃O_7– epitaxial films as the normal spherical domains. Analysis has been carried out for the set of specimens which were obtained at different technological regimes and have different critical parameters and geometry.     

Gd替代YBa2Cu3O7－δ超导体的相结构与局域电子结构的研究

利用正电子湮没实验，结合x射线衍射(XRD)结构分析，研究了具有混合稀土特征的(Y_{1 -x}Gd_x)Ba₂Cu₃O_7-δ系列样品. XRD 实验结果表明，半径较大的Gd离子Y位替代使得样品晶胞参数和晶胞体积增大，但所有样品 仍保持与YBa₂Cu₃O_7-δ(YBCO)样品相同的单相正交结 构. 正电子湮没实验表明，正电子各寿命参数表现出很强的Gd替代依赖关系. 从正电子实验 结果出发，计算了Cu-O链区局域电子密度n_e的变化. 结果表明，局域电子密度n _e随Gd含量x的增加而减小，而超导转变温度T_c随局域电子密度ne的减小而增加，这种局域电子密度n_e与超导电性的关联是与铜位替代 完全不同的，且可能是近年来人们关于混合稀土铜氧化物体系具有较高临界电流密度的原因 之一. 该研究结果为铜氧化物超导体的应用和机理研究提供了相应的正电子实验资料. 关键词： 超导电性 正电子湮没 相结构 局域电子密度