非对称磁镜场电子回旋共振氧等离子体刻蚀化学气相沉积金刚石膜

分别应用郎缪尔双探针和离子灵敏探针对非对称磁镜场电子回旋共振氧等离子体的电子参数、空间分布和离子参数进行了测量,分析了气压对等离子体参数及空间分布的影响。利用该等离子体在优化的气压条件下对化学气相沉积金刚石膜进行了刻蚀,并研究了刻蚀机理。结果表明:电子温度为5~10 eV,离子温度为1 eV左右,而等离子体数密度在1010cm-3数量级。随气压的升高,电子和离子温度降低,而电子数密度先增大后减小。在低气压下等离子体数密度空间分布更均匀,优化的刻蚀气压为0.1 Pa。刻蚀过程中,离子的回旋运动特性得到了加强,有利于平行于金刚石膜表面的刻蚀,有效地保护了金刚石膜的晶界和缺陷。     

强流电子束源阴极等离子体的粒子模拟

 模拟了强流电子束源阴极表面附近区域数密度约1014 cm-3的等离子体的膨胀过程,观察到等离子体膨胀速度约为1 cm/μs。通过观察不同时刻阴极附近电子和离子的相空间分布、数密度分布和轴向电场分布,分析了等离子体膨胀过程。结果表明:等离子体的产生使得阴极表面电场增强,进而增大阴极的电流发射密度,电流密度增加使得空间电荷效应增强,并使等离子体前沿处的电场减小,当等离子体前沿处的电场减小到零时等离子体向阳极膨胀。讨论了等离子体温度、离子质量、束流密度和离子产生率对等离子体膨胀速度的影响。结果表明:等离子体的膨胀速度随着等离子体温度升高而增大,随离子质量增大而减小,但膨胀速度不等于离子声速;等离子体产生率越小,等离子体膨胀速度越小。     

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用Langmuir探针对射频(13.56 MHz)感应等离子体进行了诊断,给出了Ar等离子体轴向和径向参数随气压的变化。采用发射光谱测量了等离子体中氩原子的750.3nm谱线强度随气压在轴向的变化,其变化趋势与Langmuir探针测量结果的变化趋势相一致。测量了氩离子的434.8nm谱线强度随气压在轴向的变化并获得了氩离子的434.8nm谱线强度与氩原子的430.0nm谱线强度的比值在轴向三个不同位置的变化。从测得的结果可知:在放电室中上部形成了均匀稳定的高密度等离子体,在靶附近有所降低,在中部以下等离子体密度逐渐变低;在径向6~7 cm以内的区域等离子体参数变化不大,形成了均匀稳定的等离子体,等离子体参数在器壁处变化明显。     

Ag纳米颗粒增强的Ho~(3+)/Tm~(3+)共掺铋锗酸盐玻璃的2μm发光研究

采用基于传统熔融淬冷技术的热化学还原法制备了系列Ag纳米颗粒复合Ho3+/Tm3+共掺铋锗酸盐玻璃样品,研究了Ag纳米颗粒含量对玻璃2μm发光特性的影响.结果表明,Ag纳米颗粒的表面等离子体共振带位于500—900 nm,峰值位于650 nm,透射电子显微镜图像中观察到均匀分布的Ag纳米颗粒,尺寸约为5—10 nm.通过测试玻璃样品在1.7—2.3μm波段的荧光光谱发现,Ag掺杂后Ho3+离子2μm处的荧光强度得到了极大的提高,其中AgCl掺杂质量分数为0.3%时的荧光强度比未掺杂时的荧光强度增强10倍,这归因于Ag纳米颗粒的局域场增强作用.计算得到Ho3+离子的吸收截面为0.491×10-20cm-2,发射截面为1.03×10-20cm-2,当增益系数为0.2时即可实现正的增益.     

VUV信号强度与等离子体宏观参数相关性分析

东方超环(EAST)上高速真空紫外(VUV)成像系统是一套选择性测量中心波长为13.5 nm的等离子体线辐射的光学成像系统。此系统具有高时空分辨能力,主要用于边界(包括台基区)等离子体行为研究。该系统已经投入EAST等离子体物理实验并获得了大量的实验数据。基于这些数据,分析了VUV诊断系统的信号强度与等离子体宏观参数之间的相关性,着重研究了EAST上中性束注入(NBI)加热功率、杂质(碳和锂)水平、电子密度等因素对VUV信号强度的影响。结果与预期基本一致:随着NBI功率的增加,VUV信号强度随之增强;VUV信号强度与电子密度、杂质水平呈现线性关系。此外,本文还评估了由于NBI注入引起的电荷交换复合产生的C5+离子对VUV信号的贡献,结果表明这部分贡献可以忽略不计。     

氧等离子体刻蚀CVD金刚石膜的影响机理

采用电子回旋共振(ECR)等离子体在不同的磁场位形和工作气压下刻蚀化学气相沉积(CVD)金刚石膜,运用双探针和离子灵敏探针法对等离子体进行了诊断,研究了等离子体参数对刻蚀效果的影响。结果表明:磁场由发散场向收敛场转变时,离子温度、电子温度和等离子体密度都随之增大,刻蚀效果逐渐增强;当工作气压由低气压向高气压变化时,等离子体参数先增大后减小,CVD金刚石膜表面粗糙度降低程度也出现了相同的趋势。     

离子灵敏探针及其在磁镜装置中的应用

使用离子灵敏探针(ISP)对MM-2U简单磁镜装置中等离子体的离子温度和电子温度进行了测量。描述了这种静电离子探针的工作原理及主要的设计参数。对从探针特性曲线得到的离子温度及密度也予以讨论。     

“强光一号”等离子体开关及负载稳定性分析

"强光一号"等离子体断路开关(POS)及负载二极管系统工作性能不够稳定,通过分析数据指出POS等离子体源参数差异性是导致系统不稳定的主要原因。POS等离子体源参数重复性测量结果表明,在开关断路时刻等离子体源瞬时发射等离子体密度重复性极差在10%左右,而开关区间累积等离子体密度极差超过100%。开关区间累积等离子体密度和阴极重粒子发射会对POS断路性能产生显著影响。计算表明开关区间累积等离子体密度差异对POS断路电流阈值影响达到200kA,与运行数据统计结果一致;在断路电流阈值相同的条件下,阴极物质逸出对二极管电压影响显著,MCNP程序计算结果表明,产生辐射剂量差别可以达到80%,与统计数据相当。     

闭式电感耦合等离子体特性对比实验研究和光谱分析

ICP反应室或ICP质谱仪不同,ICP在用于衰减微波时,其腔体采用全密封石英结构,同时缺少静电屏蔽、金属衬底和磁场约束等条件,研究其内部电子密度等参数的分布对于等离子体局部隐身技术具有重要意义。利用光谱分析法,对两种典型ICP源(螺旋型和盘香型)在密闭石英立方体腔内H模式下稳定放电的电子密度分布展开了对比试验研究。使用Ar离子谱中476.45 nm谱线相对光谱强度变化研究了不同型ICP源的E—H模式跳变和功率耦合效率,通过非H谱线(Ar)的Stark展宽法,诊断了两种源的天线垂直平面上的二维电子密度分布。实验发现ICP在H模下的电子密度分布受交变磁场产生的趋肤电流影响较大,趋肤深度随着放电功率的增大而减小,同时主等离子体区域体积缩小、电子密度增加,在天线的垂直面上,螺旋型源ICP电子密度呈中心轴对称型分布,盘香型源ICP呈双峰型分布。功率耦合效率受源天线形状及其容性耦合效应影响较大,光谱相对强度显示螺旋型源的功率耦合效率低于盘香型源。通过该实验方法,可以在石英立方腔体内得到最高电子密度范围为1.4×1017～2.5×1017 m-3的螺旋型ICP源和范围1.8×1017～3.0×1017 m-3的盘香型ICP源。     

用于激光等离子体诊断实验的二 倍频探针光系统

为了满足基准物理实验的要求 ,准确地探测出靶面的等离子体的电子温度、密度、电子离子漂移速度等参数 ,在星光 激光装置上发展了一束二倍频激光作为探针光。通过模拟实验已经证实了该探针光的二倍频总能量大于 5J,焦斑尺寸小于 1 0 0 μm,可以满足激光与等离子体相互作用的高功率要求。目前 ,该探针光系统已经用于用于激光等离子体诊断实验的常规运行。     

A study of methods for moving particles in RF processing plasmas

Methods for moving charged particles in RF processing plasmas are investigated. These methods include varying RF power, varying chamber pressure, attraction and repulsion by an electrostatic probe, and movement with magnetic fields. Varying RF power changes the depth of the potential wells where particles are trapped. The RF power affects shape and location of the traps and the bulk plasma potential. Increasing the chamber pressure moves the sheath edge closer to the wafer being processed. Since particle traps are found at the plasma sheath edge increasing the chamber pressure will move the particle traps (and any trapped particles) closer to the wafer being processed. The Langmuir probe can repel particles when under negative bias and attract them when positively biased. This probe can also distort the sheath edge when the tip resides within the sheath. Applying a magnetic field can change the characteristics of the particle traps and produce a force on the charged dust particles     

等离子体增强化学气相沉积中对尘埃颗粒诊断

采用SiH4,C2H4和Ar在射频容性耦合柱状放电室中产生了尘埃颗粒,利用发射光谱测得射频尘埃等离子体放电室中的一些基本碎片的发射光谱,并给出了这些碎片的光发射强度随着实验条件变化的曲线。随着功率和气压的增加,碎片的光发射强度逐步增加,尤其是随功率增加得更快,这说明功率对硅烷和乙烯的离解作用明显。随着硅烷和乙烯流量的增加,碎片的光发射强度随之下降。利用朗缪尔探针的实验结果得出尘埃密度的变化趋势,给出了尘埃密度随射频功率变化的曲线,其结果与硅烷和乙烯的离解变化趋势基本吻合。     

高频感应等离子体流动模型与微型电推进器流场特性分析

微型射频离子推力器具有结构简单、 工作寿命长、 推力动态范围大、 性能调节响应灵敏等特点,是国际微电推进领域的研究热点之一.射频离子推力器电离室内的感性耦合放电等离子体特性和推力器的性能密切相关.为此,文章建立了低气压、小尺寸微型射频离子推力器电离室内感性耦合等离子体流体模型,开展了电磁场、流场、化学反应浓度场的多物理...     

Control of implantation area in direct-current plasma immersion ion implantation (DC-PIII)

In plasma immersion ion implantation (PIII) of planar samples such as silicon wafers in the PIII-ion-cut as well as separation by plasma implantation of oxygen (SPIMOX) processes, the only important ions are the ones arriving at the top surface. Ions implanted into the other surfaces are, in fact, undesirable as they reduce the efficiency of the power supply and plasma source and give rise to metallic contamination. We have demonstrated direct-current PIII (DC-PIII) by using a grounded grid to separate the vacuum chamber for planar sample implantation. The advantages include lower equipment cost, higher power and time efficiency, larger impact energy, and last but not least, smaller instrument footprint. In this paper, we investigate the control of the implantation area by adjusting the radius of the extraction hole, the distance between the conducting grid and the sample, and the radius of the wafer stage. Theoretical simulation is conducted using particle-in-cell and experiments are also carried out. Our results indicate that the implanted area increases with the radius of the extraction hole and wafer stage, but decreases with a larger distance between the grid and sample. The effects of the extraction hole radius G/sub r/ are the largest, followed by the placement of the sample to the conducting grid H. The wafer stage poses the least influence in this respect, but a proper wafer stage dimension improves the lateral implant dose and incident angle homogeneity. Our simulation and experimental results suggest optimal ratios of these parameters for each wafer size.     

Optimization of inductively coupled plasma deep etching of GaN and etching damage analysis

Inductively coupled plasma (ICP) etching of GaN with an etching depth up to 4 μm is systemically studied by varying ICP power, RF power and chamber pressure, respectively, which results in etch rates ranging from ∼370 nm/min to 900 nm/min. The surface morphology and damages of the etched surface are characterized by optical microscope, scanning electron microscope, atomic force microscopy, cathodoluminescence mapping and photoluminescence (PL) spectroscopy. Sub-micrometer-scale hexagonal pits and pillars originating from part of the structural defects within the original GaN layer are observed on the etched surface. The density of these surface features varies with etching conditions. Considerable reduction of PL band-edge emission from the etched GaN surface indicates that high-density non-radiative recombination centers are created by ICP etching. The density of these non-radiative recombination centers is found largely dependent on the degree of physical bombardments, which is a strong function of the RF power applied. Finally, a low-surface-damage etch recipe with high ICP power, low RF power, high chamber pressure is suggested.     

Experimental results of helicon sources

Helicon plasma sources are known as efficient generators of uniform and high density plasma.A helicon plasma source was developed for the investigation of plasma stripping and plasma lenses at the Institute of Modern Physics, CAS.In this paper, the characteristics of helicon plasma have been studied by using a Langmuir four-probe and a high plasma density up to 3.9×10~(13)/cm~3 has been achieved with the Nagoya type Ⅲ antenna.In the experiment, several important phenomena were found: (1) for a given magnetic induction intensity, the plasma density became greater with the increase of RF power; (2) helicon mode appeared at RF power between 300 W and 400 W; (3) the plasma density gradually tended to saturation as the RF power increased to the higher power; (4) a higher plasma density can be obtained by a good match between the RF power and the magnetic field distribution.The key issue is how to optimize the matching between the RF power and the magnetic field.Moreover, some tests on the extraction of ion beams were performed, and preliminary results are given.The problems which existed in the helicon ion source will be discussed and the increase in beam density will be expected by extraction system optimum.     

Experimental study on parameters of dust plasma in SiH4/C2H4/Ar discharges

Measurements of dust plasma parameters were carried out in the discharges of （SiH4/C2H4/Ar） mixtures. Dust particles were formed in the capacitively coupled radio-frequency discharge of these reactive mixtures in a cylindrical chamber. Langmuir probe was employed for diagnosing and measuring the important plasma parameters such as electron density and electron temperature. The results showed that the electron density dropped, and in contrast the electron temperature rose when the dust particles formed. The curves of the electron density and temperature versus the RF power and pressure were presented and analysed. Further, it was found that the wriations of electron temperature and the size of dust void with the RF power followed the similar trends. These trends might be useful for understanding more about the characteristics of dusty voids.     

60MHz电容耦合等离子体中电子能量分布函数特性研究

甚高频(频率大于30 MHz)耦合放电源由于能产生大面积高密度的等离子体而受到了人们的广泛关注. 采用电流、电压探针以及朗缪尔探针诊断技术对60MHz射频激发产生的容性耦合等离子体的放电特性及电子行为进行了研究. 实验结果表明,等离子体的等效电阻/电容随着射频输入功率的增加而减小/增加;等离子体中电子行为不仅依赖于射频输入功率,还与放电气压密切相关;放电气压的增加导致电子能量概率分布函数(EEPF)从双温Maxwellian分布向Druyvesteyn分布转变,而且转变气压远低于文献所报道的数值,这主要是由于在60MHz容性耦合等离子体中电子反弹共振加热效率大为降低. 关键词： 甚高频容性耦合等离子体 朗缪尔探针诊断 电子加热模式     

高气压空气环状感性耦合等离子体实验研究和参数诊断

等离子体的电子密度分布, 电子碰撞频率分布, 覆盖面积, 厚度是影响其覆盖目标电磁散射特征的关键属性. 对此, 本文开展了在20 cm×20 cm×7 cm石英腔内感性耦合等离子体(ICP)的放电实验, 观察了在高气压条件下, 空气ICP的环形放电形态, E-H模式跳变现象和分层结构, 测量了其电负性核心区和电正性边缘区宽度和厚度随功率、气压的变化趋势, 并通过COMSOL Multiphysics对平板线圈磁场强度分布的分析和电负性气体扩散理论给予上述现象合理的解释, 同时, 利用微波透射干涉法测量了核心区域的电子密度随功率和气压的变化曲线, 利用理论模型计算了边缘区域的电子密度分布, 最后通过辅助气体Ar发射谱线的玻尔兹曼图形法得到了核心区和边缘区的电子激发温度.     

ICP等离子体鞘层附近区域发光光谱特性分析

为了独立控制鞘层附近区域离子密度和离子能最分布,采用光发射谱(OES)测量技术,对不同射频功率、放电气压和基底偏压下感应耦合等离子体鞘层附近区域辉光特性进行了研究.原子谱线和离子谱线特性分析表明,在鞘层附近区域感应耦合等离子体具有较高的离子密度和较低的电子温度.改变放电气压和射频功率,对得到的光谱特性分析表明,鞘层附近区域离子密度随射频功率的增大而线性增大,在低压下随气压的升高而增大.低激发电位原子谱线强度增加迅速,高激发电位原子谱线强度增加缓慢,而离子谱线强度增加很不明显.改变基底直流偏压,对得到的发射光谱强度变化分析表明,谱线强度随基底正偏压的增加而增大.随着基底负偏压的加入,谱线强度先减小而后增大;直流偏压为-30 V时,光谱强度最弱.快速离子和电子是引起Ar激发和电离过程的主要能量来源.