Electrical conduction and 1ƒ noise in Li-DOPED MnO

Electrical resistivity, thermoelectric power and current noise were measured on Li-doped MnO single crystals in the temperature range from 300 to 1000 K. Below 700 K the crystals are p-type and the activation energy of the resistivity is 0.75 eV. Around 700 K the activation energy changes from 0.75 to 1.25 eV owing to a change from p- to n-type conduction. The depth of the Li acceptor is found to be 0.65 eV. From resistivity and thermoelectric power data it is concluded that the bandgap in first approximation can be written as E_s(T) = E_o ? γT between 750 and 1000 K, with E_o = 1.9 eV and γ = 6 × 10^?4 eV/K. The current noise spectra show $\text{1}\text{?}$ noise. The magnitude of the $\text{1}\text{?}$ noise is strongly temperature dependent. From the noise data it is deduced that E_o = 2.2 eV and γ = 10^?3 eV/K in the temperature range 430–700 K.     

Resonance photoconductivity in Fe-doped InP

A photoconductivity peak at 0.44 eV is observed in Fe-doped InP. This peak is attributed to electrons which are optically excited from the Fe²⁺⁵E ground state to vibronic levels of the ⁵T₂ excited state, and thermally excited from there to the conduction band. The lineshape is nearly Gaussian and is well fitted by assuming a vibronic coupling energy of about 0.06 eV in the ⁵T₂ state. In analogy with results in the II–VI compounds this coupling may be dominated by interaction with non-symmetric lattice modes which produce a dynamic Jahn-Teller effect.     

Central peak in the strontium titanate crystal near the tetragonal-to-cubic phase transition

Raman spectra of the SrTiO3 crystal have been measured in wide temperature (22?C316 K) and frequency (2?C1020 cm^?1) ranges. It has been shown that a central peak appears in low-frequency Raman spectra at temperatures above 70 K. In the spectral geometry with polarization rotation near the temperature T _c = 106 K of the cubic-to-tetragonal phase transition, the central peak exhibits properties of the order-disorder phase transition. Such a behavior of the central peak has been explained by the interaction of the low-frequency soft mode E _g with the relaxation mode near T _c .     

Electrical transport properties of gadolinium scandium gallium garnet

Electrical conductivity and thermoelectric power are measured on a single crystal of Gd_3.0Sc_1.8Ga_3.2O₁₂ (GSGG) between 1273 and 1673 K. The measurements are made both in air and in controlled atmospheres, and P_O2 varies from 10^?1.68 to 10^?5.6 MPa. The data indicate GSGG may well be a mixed conductor in this temperature and P_O2 range, with n-type electronic conductivity and ionic transport on the oxygen sublattice. Changes in temperature induce long-lived disequilibrium in electrical conductivity of GSGG (over 30 h at T < 1373 K) that can be explained by temperature dependent cation redistribution. The effective activation energy for equilibrium electrical conductivity is E_a = 2.40 ± 0.05 eV, as opposed to values of E_a between 1.8 and 2.2 eV during actual temperature changes. An additional contribution in the equilibrium E_a, due to thermally activated cation redistribution, can account for the higher value seen.     

A pulsed NMR study of hydrogen diffusion in hydrides of group IVa transition metals

Activation energies E_A for hydrogen diffusion in hydrides of Group IVa transition metals have been determined by ¹H nuclear magnetic resonance measurements of spin lattice relaxation in both the laboratory (T₁) and rotating (T_1p) frames. For the HfHx system both activation energies obtained from T₁ data, and the value of T₁ at the minimum appear to be insensitive to hydrogen content x in the range 1.58 ? x ? 1.98. For hydrides of titanium and zirconium of approximately stoichiometric composition MH₂ (where M = metal), there is excellent agreement between activation energies obtained from T₁ and T_1p data. Mean activation energies obtained were 0.51 eV for TiH_1.98 and 0.83 eV for ZrH_1.96, consistent with a single diffusion mechanism in each case over the temperature range 260–600K and 400–800K respectively. In the case of HfH_1.98 the agreement was less good, values of 0.64 and 0.55 eV being obtained from T₁ and T_1p respectively.     

Dielectric relaxation and ferroelectricity in Cd2Nb2O7 pyrochlore

The dielectric dispersion of Cd₂Nb₂O₇ pyrochlore in a weak electric field was studied in a broad frequency range (100 Hz to 13 MHz) using the crystal samples slowly cooled (0.5 K/min) in the temperature interval from 300 to 80 K. As the temperature decreased down to T _c=196 K and T _max～190 K, the dielectric permittivity exhibited deviation from the Curie-Weiss law. It is suggested that this behavior is related to the development of a short-range correlation between microscopic polar regions formed at T→T _max ⁺ . The local order parameter q(T) ～ 〈P _i P _j 〉^1/2 was calculated using the permittivity ε′(T) measured at various frequencies. The variation of this parameter is compared to that of the spontaneous polarization P _s (T) determined from the measurements of a pyroelectric current in the external electric field E _dc =0.95 kV/cm. In the frequency range from 100 Hz to 13 MHz, the dispersion of the dielectric response in the temperature region of 180–192 K is characteristic of a relaxator ferroelectric featuring a glasslike behavior. The parameters of this state were determined, including the activation energy of the polarization fluctuations (E _a ≈0.01 eV), the relaxation rate at T → ∞ (f ₀=1.9×10¹² Hz), and the polarization fluctuation freezing temperature (T _f =183 K). In Cd₂Nb₂O₇ pyrochlore, in contrast to the known relaxator ferroelectrics of the PMN type studied previously, this state coexists with the normal ferroelectric state appearing at T _c.     

The excitonic absorption spectrum of thin Ag2ZnI4 films

The electron absorption spectrum of thin films of the Ag₂ZnI₄ complex compound is studied at photon energies of 3–6 eV. It is established that the interband absorption edge corresponds to an allowed direct transitions across the energy gap E _g=3.7 eV. A strong exciton band is adjacent to the absorption edge at E _ex=3.625 eV (80 K); in the 80–390 K range, the temperature behavior of the half-width Γ of this band is determined by the exciton-phonon interaction typical of quasi-one-dimensional excitons. At T≤390 K, a discontinuity in the slope of the E _ex(T) and Γ(T) dependences is observed. This discontinuity is associated with the generation of Frenkel defects and is accompanied by the transfer of Ag ions to the interstitial sites and vacancies of the crystal lattice of the compound.     

Electric field effect on the luminescence of KI:T1

Thermoluminescence of KI: T1, X- or β-irradiated at T ?77°K shows two main peaks at 105°K and 170°K. They are respectively attributed to the recombination of mobile V_K centres with T1^O centres and to the recombination of thermally released electrons from T1^O centres with T1²⁺ centres. Similar experiments performed under static electric fields (E <40kV cm^-1) show that the intensity of the second glow peak is strongly reduced. The relative intensity variation is anticorrelated with the intensity of glow peaks occurring at T > 230 °K. We suggest that in the temperature range in which T1^O centres are thermally ionised, the effect of the electric field is to favour the retrapping of these electrons on other traps (still unknown). Irradiation doses also play an important role and their effects are studied at T = 77 °K and T = 200 °K.     

Deep level transient spectroscopy in Hg1−xCdxTe

We report the application of Deep Level Transient Spectroscopy (DLTS) in Hg_1-xCd_xTe, demonstrating for the first time the utilization of DLTS techniques in a narrow band-gap semiconductor, E_g < 0.40 eV. DLTS measurements performed on an n⁺-p diode with E_g (x=0.21, T=30 K) =0.096 eV have identified an electron trap with an energy of E_v + 0.043 eV and a hole trap at E_v + 0.035 eV. Measurements of trap densities, capture cross sections, and the close proximity of the electron and hole trap locations within the band-gap suggest that DLTS may be observing both the electron and hole capture at a single Shockley-Read recombination center. The trapping parameters measured by DLTS predict minority carrier lifetime versus temperature data to be comparable with the experimentally measured values.     

Anisotropy of permittivity of the hexagonal multiferroic HoMnO<Subscript>3</Subscript> in the spectral range 0.6–5.0 eV

The anisotropy of the optical properties of a single crystal of the hexagonal manganite HoMnO₃ has been investigated by spectroscopic ellipsometry in the spectral range 0.6–5.0 eV. It has been demonstrated that the optical absorption edge for the polarization E ⊥ c is determined by the intense narrow transition O(2p) → Mn(3d) centered at 1.5 eV, whereas this transition for the polarization E ‖ c is strongly suppressed and shifted toward higher energies by 0.2 eV. It has been revealed that, at the temperature T = 293 K, the spectra for both polarizations E ‖ c and E ⊥ c exhibit a broad absorption band centered at ∼2.4 eV, which was earlier observed in nonlinear spectra during optical second harmonic generation.     

Temperature dependence of the energy separation between Γ and L minima in n-type GaSb

Energy separation ΔE_c between Λ and L minima of GaSb conduction band is deduced from temperature dependence of tunneling current in p−n junctions. ΔE_c is found to inceasing vx. temperature with a coefficient d(ΔE_c/dT) of about - 2.10^-4eV/dgK.     

Resonances in the cesium atom yield in electron-stimulated desorption from tungsten coated with a germanium monolayer

The yield and energy distributions of Cs atoms emerging from cesium layers, which are adsorbed on tungsten coated with a thin germanium film (1-to 2-monolayers thick), have been measured as a function of the incident electron energy, the amount of adsorbed cesium, and the substrate temperature. The measurements were performed by the time-of-flight technique with a surface ionization detector. At low cesium coverages (Θ < 0.1), the Cs atom appearance threshold at a substrate temperature T = 160 K is ～24 eV, which correlates with the Cs 5s-level ionization energy. As the electron energy is increased, the yield passes through a broad plateau and reaches saturation. The signal intensity in the plateau region decreases gradually with increasing cesium coverage and tends to zero for Θ > 0.14. For Θ ≥ 0.15, the cesium atom appearance threshold shifts to ～30 eV, which corresponds to the Ge 3d-level ionization energy and the plateau is replaced by a resonance peak at ～38 eV, which can be identified with the ionization energy of the W 5p _3/2 level. This peak is observed only for Θ < 0.3 and T = 160 K. For Θ ≥ 0.3, there appears a resonance peak at ～50 eV, and for Θ ≥ 0.5, another resonance peak appears at ～80 eV. These peak positions correlate with the ionization energies of the W 5p _1/2 and W 5s levels, and their intensity is maximum at Θ = 1. The Cs atom energy distributions for Θ < 0.15 consist of a bell-shaped peak with a maximum at ～0.55 eV, and those for Θ ≥ 0.15 contain two nearly resolved maxima, a broad one peaking at ～0.5 eV and a narrow one at ～0.35 eV. The above results argue for the existence of three channels of Cs atom desorption. One channel involves reverse motion of the Cs²⁺ ion; another channel, neutralization of the adsorbed Cs⁺ ion following the Auger decay of a vacancy in the Ge atom; and the third channel involves desorption of a CsGe molecule as it is repelled from a W core exciton.     

Variation of electron energy loss spectra of Ni (100) with increasing primary energy

Electron energy loss spectra of clean Ni(1 0 0) show for the first time a 17 eV peak, which is attributed to an interband transtiion. All the observed peaks are shifted to higher energies as the primary electron energy E_p increases from 102 to 2045 eV. This shift is explained by a continuous decay in energy of the primary electrons inside the crystal. At E_p ? 700 eV, the decay takes place in the surface region of the crystal, while at E_p > 700 eV it takes place mainly in the bulk. The rate of decay increases with increasing temperature of the crystal between 300 and 900 K.     

Superionic transitions and conductivity anisotropy in Na4.6FeP2O8.6F0.4 single crystals

The cation conductivity in the directions parallel (σ_‖[001]) and perpendicular (σ_⊥[001]) to the [001] crystallographic direction of Na_4.6FeP₂O_8.6F_0.4 single crystals has been investigated at 293–734 K. The specific features of the ionic conductivity have been studied near two phase transitions at T _{tr, 1} ～ 450 K and T _{tr, 2} ～ 545 K. At T = T _{tr, 1}, the activation enthalpy for the dependences σ_‖[001](T) and σ_⊥[001](T) decreases from 0.45 ± 0.01 to 0.33 ± 0.02 eV, and the σ_‖[001](T) curve has a jump of the ionic conductivity by a factor of almost two at T = T _{tr, 2}; the jump is related to a manifestation of commensurate modulation of the crystal structure. In the Na_4.6FeP₂O_8.6F_0.4 crystals, the ionic transport is anisotropic with the ratio σ_‖[001]/σ_⊥[001] = 7.7, 5.2, and 6.6 at 293 K (T < T _{tr, 1}), 500 K (T _{tr, 1} < T < T _{tr, 2}), and 700 K (T < T _{tr, 2}), respectively. The mechanism of cation conductivity in the Na_4.6FeP₂O_8.6F_0.4 crystals is discussed.     

Dielectric properties of (NH4)2SO4 crystals in the range of electronic excitations

Spectra of the real and imaginary parts of the pseudo‐dielectric permittivity, 〈?₁〉(E) and 〈?₂〉(E), of ferroelectric ammonium sulfate crystals, (NH₄)₂SO₄, have been measured in the range of electronic excitations 4.0 to 9.5 eV by ellipsometry using synchrotron radiation. Temperature dependences of the corresponding susceptibilities, 〈χ₁〉(T) and 〈χ₂〉(T), obtained for the photon energy E = 8.5 eV, related to excitations of oxygen p‐electrons, reveal sharp peak‐like temperature changes near the Curie point T_C = 223 K. The large temperature‐dependent increase of the imaginary part of the susceptibility χ₂(T), together with a simultaneous decrease of the real part of the susceptibility χ₁(T), take place at the phase transition. These anomalies have been ascribed mainly to the SO₄ group of the crystal structure.     

A variable temperature EPR study of the manganites (La1/3Sm2/3)2/3SrxBa0.33−xMnO3 (x=0.0, 0.1, 0.2, 0.33): Small polaron hopping conductivity and Griffiths phase

Four manganite samples of the series, (La_1/3Sm_2/3)_2/3Sr_xBa_0.33−xMnO₃, with x=0.0, 0.1, 0.2 and 0.33, were investigated by X-band (∼9.5 GHz) electron paramagnetic resonance (EPR) in the temperature range 4-300 K. The temperature dependences of EPR lines and linewidths of the samples with x=0.0, 0.1 and 0.2, containing Ba²⁺ ions, exhibit similar behavior, all characterized by the transition temperatures (T_C) to ferromagnetic states in the 110-150 K range. However, the sample with x=0.33 (containing no Ba²⁺ ions) is characterized by a much higher T_C=205 K. This is due to significant structural changes effected by the substitution of Ba²⁺ ions by Sr²⁺ ions. There is an evidence of exchange narrowing of EPR lines near T_min, where the linewidth exhibits the minimum. Further, a correlation between the temperature dependence of the EPR linewidth and conductivity is observed in all samples, ascribed to the influence of small-polaron hopping conductivity in the paramagnetic state. The peak-to-peak EPR linewidth was fitted to ΔB_pp(T)=ΔB_pp,min+A/Texp(−E_a/k_BT), with E_a=0.09 eV for x=0.0, 0.1 and 0.2 and E_a=0.25 eV for x=0.33. From the published resistivity data, fitted here to σ(T)∝1/T exp(−E_σ/k_BT), the value of E_σ, the activation energy, was found to be E_σ=0.18 eV for samples with x=0.0, 0.1 and 0.2 and E_σ=0.25 eV for the sample with x=0.33. The differences in the values of E_a and E_σ in the samples with x= 0.0, 0.1and 0.2 and x=0.33 has been ascribed to the differences in the flip-flop and spin-hopping rates. The presence of Griffiths phase for the samples with x=0.1 and 0.2 is indicated; it is characterized by coexistence of ferromagnetic nanostructures (ferrons) and paramagnetic phase, attributed to electronic phase separation.     

Equivalent electric circuit analyses of ionic thermocurrent in sodium-doped CaF2 crystals

The characteristics of high-temperature ionic thermocurrent (HT ITC) in CaF₂ doped with different sodium concentrations were studied by the Teflon-insulated electrode ITC method. It was shown that, with increasing sodium concentration, the HT ITC band moved toward a Na⁺-F_V dipole band with a peak at 162 K. The results of analyses of the HT ITC spectra using an equivalent electric circuit proved that the activation energy of space charge migration related to HT ITC was also strongly dependent on the doped sodium concentrations if varied from 0.94 to 0.46 eV with increasing sodium concentration in our ITC study. In addition, the broadening of the Na⁺-F_V dipole band was observed in 3 nominal mole% NaF-doped CaF₂, which was accompanied by a considerable decrease of the activation energy from 0.46 to 0.29 eV without showing marked temperature shifts of the peak ITC bands.     

Identification of Cu(I) and Cu(II) oxides by electron spectroscopic methods: AES,ELS and UPS investigations

The externally prepared black-coloured copper oxide (T? 700 K, P_O2 ? 100 torr) on a Cu(100) surface is identified by electron spectroscopy as CuO. Compared to the red-coloured Cu(I) oxide (in situ oxidation at T ? 400 K, P_O2 ? 0.5 torr, ～ 10⁹ L), the He(I)- excited photoemisson from CuO reveals characteristic shake-up satellites 10–12 eV below E_F and a broadened emission from overlapping oxygen-induced 2p and Cu 3d states. From the AES and ELS results, in correlation with the data from core electron spectroscopy, chemical shifts of Cu 2p, Cu 3s and Cu 3p in CuO to higher binding energy and decreases in binding energy of the oxygen-induced states were deduced. The unoccupied electron states of Cu at 5 and 7.5 eV above E_F — postulated from the ELS results — are preserved in Cu₂O and CuO compounds. Annealing of the Cu(II) oxide at 670 K is accompanied by decomposition into Cu₂O due to the solid-state reaction following the scheme: 2CuO → 1/2 O₂ + Cu₂O.     

Evaluation of plasmon-loss spectra of molybdenum using elastic-peak electron spectroscopy

Plasmon-loss spectra of clean polycrystalline molybdenum surfaces have been determined in the primary energy range E_p = 50–3000 eV. Spectra a distributions (nonderivative mode). A simplified model is described for evaluating plasmon-loss spectra using elastic-peak electron spectroscopy, as de of elastically reflected electrons is determined by integrating the N(E) spectrum of secondary and backscattered electrons. The ratio of the ar (23–24 eV) to that of the elastic peak is Pλ, the product of the probability for creating a volume plasmon loss and the inelastic mean free pat second plasmon-loss peak is (Pλ)². Evaluation of our experimental plasmon-loss spectra gives Pλ = 0.4–0.5 for E_p > 500 eV. Th constitutes ～50% of all losses determining the IMFP, interband loss processes being important in the remainder. For the low energy range, E_p found. For E_p < 100 eV, no volume plasmon-loss peak could be detected in our N(E) spectra. The simplified model proves to be valid fo plasmon-loss peak (11–12 eV), i.e., such that N_pls/N_e ? 10^?2. Some results are presented concerning surface plasmon losses as molybdenum surface.     

Surface photoemission in the 4d band from polycrystalline silver surfaces

Surface induced local d-band states in the upper 4d band between ～ 4 and ～ 5.2 eV below E_Fermi have been identified for polycrystalline silver films in photoemission experiments using synchroton radiation. A thin over-coat (10 å) by an Al film leads to a depression of these surface induced local states whereas a change from s- to p-polarized excitation leads to an enhancement. Deposition of additional silver (～ 3 Å) at 120 K induces additional emission 4.2 eV below E_F with a FWHM of only ～ 0.4 eV.