Knight shift in PbTe and Pb1−xSnx Te

The importance of various contributing mechanisms to the Knight shift (K) in PbTe and Pb_1−xSn_xTe is analyzed using a perturbation theory and a general experession for K which includes the spin (K_s), orbital (K_o) and spin-orbit (K_so) contributions to the Knight shift. It is found that K_s is the dominant contribution. However, with increase in the carrier concentration, the strength of K_so increases, and becomes of the same order as K_s at high density of carriers. K_o is found to be small throughout the range of the carrier density considered. Further, it is seen that the electron-electron exchange enhancement parameter increases with increase in the carrier density. We have also considered the effect of temperature. The results and the trends obtained in our calculation are in overall agreement with the experiment for the range of the carrier density considered.     

Photoelectric properties of Pb1−x−y Sn x Ge y Te:In epitaxial films

Pb_1–x–y Sn _x Ge _y Te:In epitaxial films are examined in a wide temperature interval and at various background fluxes. These films have high sensitivity to infrared radiation in the spectral range <20m. The lifetime depends exponentially on temperature and varies from several seconds at T=10 K to 10^–2 s at T=20 K. The two-electron model of Jahn-Teller centers is proposed to explain the results. Multielement photoresistors based on these films are fabricated and D*=1.7×10¹³ cm Hz^1/2 W^–1 at T=25 K is achieved. Noise of the photoresistors is independent of background flux when it varies from 10¹² cm^–2 s^–1 to 10¹⁸ cm^–2 s^–1. As compared with Si:Ga and Ge:Hg photoresistors, the responsitivity is several orders larger at the operating temperature 25–30 K.     

Features of the plasma sputtering of polycrystalline Pb1 − x Sn x S films

The processes of the sputtering and modification of surfaces of polycrystalline films of the ternary solid solution Pb_{1 ? x} Sn _x S (x = 0.9–1.0) in a high-density Ar plasma of high-frequency low-pressure inductive discharge are studied. Films with thicknesses of 1–4 μm are grown on glass substrates using the “hot-wall” method and consist of plate-like crystallites. It is established that the sputtering rate for lead-tin sulfide films does not exceed 2.0 nm/s, which is determined by the presence of oxygen-containing compounds on the surfaces. In the case of plate-like crystallites with nanodimensional thicknesses, the effect of smoothing of the developed surfaces of the polycrystalline Pb_{1 ? x} Sn _x S layers during plasma treatment is observed; this is important for fabricating multilayer device structures.     

Electron paramagnetic resonance of Gd3+ ions in Ca1 − x − y Y x Gd y F2 + x + y crystals

Electron paramagnetic resonance of Ca_{1 ? x ? y} Y _x Gd _y F_{2 + x + y} single crystals has revealed spectra that are not typical of gadolinium-doped CaF₂ crystals. These spectra have a nearly tetragonal symmetry and are most probably caused by Gd³⁺ ions localized in yttrium clusters. Weak spectra of tetragonal Gd³⁺ centers, whose parameters are close to those of a cubic gadolinium center caused by an isolated Gd³⁺ ion, have been also detected. These centers are attributed to isolated Gd³⁺ ions localized near octahedral rare-earth clusters or their associations.     

Thermal conductivity of single crystals of the Ca1 − x Y x F2 + x solid solution

The thermal conductivity of single crystals of the solid solution of yttrium fluoride in calcium fluoride Ca_{1 ? x} Y _x F_{2 + x} with the fluorite structure (x ≤ 0.20) and the Ca_0.27Y_0.73F_2.73 phase with the tisonite structure has been studied by the absolute steady-state longitudinal heat flow method in the temperature range 50–300 K. It has been established that the thermal conductivity drops sharply with increasing yttrium trifluoride concentration, especially in the low-temperature region.     

A study of Ba x Mg1 − x F2 optical films

Ba _x Me_{1 ? x} F₂ binary fluoride films (“Me” denotes calcium or magnesium fluoride) are studied. A method of processing the reflection and transmission spectra is proposed to determine the optical constants. The dispersion dependences of the refractive indices and absorption coefficients of films in the range of 1.3–12 μm are found. Dispersion in films in the regions of additional absorption bands, which are absent in single crystals, is observed for the first time. It is shown that the films of binary fluorides have a higher packing density, a lower absorption, and better operating characteristics than do films of pure fluorides. The films are promising for application as optical interference coatings in the mid-IR spectral region.     

Ionic conductivity properties and 19F NMR investigation of Pb1−xCrxF2+x solid solutions with fluorite-type structure

The F⁻ ion transport and diffusion properties inside the solid solution Pb_1−xCr_xF_2+x (0≤x≤0.12) with fluorite-type structure have been determined by impedance spectroscopy and ¹⁹F NMR investigation. The various electrical parameters of Pb_1−xCr_xF_2+x are compared with those of Pb_1−xAl_xF_2+x (0≤x≤0.12) whose structure derives also from the fluorite-type. The Cr³⁺ substitutional cation is of a slightly larger size than the Al³⁺ cation but both cations offer the same usual coordination (CN=6) in ternary fluorides. Comparison of ¹⁹F NMR spectra of some compositions Pb_1−xM_x′F_2+x (M′=Al, Cr) at different temperatures has been realized in order to discover whether the clustering process proposed in Pb_1−xAl_xF_2+x can be extended to Pb_1−xCr_xF_2+x.     

Pb1−x Fe x films prepared by vapor condensation

ZF, LF and TF SR experiments with antiferromagnetic (AF) ceramical samples La_2–x Sr _x CuO_4–y have been performed in the temperature range 10–300 K. Zero field muon spin polarization functions obtained below the Neel temperature clearly show a nonzero initial precession phase-–0.35 rad. We propose an explanation based on existence of the dynamical magnetic fields on the muon.We thank Drs. A.G. Chistov and A.M. Brjazkalo from RSC Kurchatov Institute for the preparation the #2 La₂CuO_4–y sample.     

Superconductivity of (Sn1−z Pbz)1−x InxTe alloys

The temperature dependences of the electrical resistivity of (Sn_1?z Pb_z)_1?x In_xTe alloys with different concentrations of lead (z=0–0.60) and indium (x=0.03–0.20) were studied at temperatures T=0.4–4.2 K in magnetic fields from zero to H=15 kOe. A resistivity drop of no less than three-four orders of magnitude was observed in this range of alloy compositions. Application of a magnetic field above a critical level resulted in a recovery of the sample resistivity to the original value. The observed resistivity drop is identified with a superconducting transition. The critical parameters of the superconducting transition (T _c and H _c2) were determined at the drop to one half the normal resistivity level. Experimental dependences of the critical supercon-ducting-transition temperature T _c and of the second critical magnetic field H _c2 on the contents of lead (z) and indium (x) were measured. The data obtained confirm a strong localization of the In impurity states and are evidence of the extrinsic nature of superconductivity in the class of materials under study. It was established that as the Pb content in (Sn_1?z Pb_z)_1?x In_xTe increases, T _c and H _c2 decrease as the Fermi level E _F (fixed in the In impurity resonance band) leaves the Δ extremum and the superconductivity breaks down when E _F leaves the LΣ saddle point in the valence-band energy spectrum.     

The superconducting transition temperature of Pb1−x Mn x films

Results of the superconducting transition temperatureT _c of amorphous and microcrystalline films of lead doped with manganese as magnetic impurity are reported in this work. The amorphous films show an Abrikosov-Gor'kov behaviour, whereas for the crystalline films there is a much smaller depression and a peak for higher Mn concentrations, which indicates a region of coexistence of superconductivity and magnetic ordering as a spinglass.Supported by the Deutsche Forschungsgemeinschaft in the Sonderforschungsbereich 125, Fehlordnung in Metallen — Aachen, Jülich, Köln     

237Np Mössbauer Investigations of (U1−x Np x )2Rh2Sn

Surprisingly, Np₂Rh₂Sn does not order magnetically whereas the uranium counterpart U₂Rh₂Sn orders antiferromagnetically at 24 K with a 5f moment μ _U ≈0.38μ _B . We have investigated the magnetic and electronic properties of (U_1−x Np _x )₂Rh₂Sn solid solutions. For x=0.25 and 0.5, the ordering temperature decreases to 11 K whereas the Np-rich compound (x=0.75) shows the onset of magnetic order around T≈6 K. The average Np magnetic moment amounts to 0.84 μ _B ,0.83μ _B and 0.25 μ _B respectively. The isomer shift slightly decreases, from −9.6 mm/s to −10.4 mm/s (versus NpAl₂) as x increases. The values of the quadrupole interaction parameter in the ordered and paramagnetic state suggest that Np moments are parallel to c for x=0.25 and then rotate to the basal plane for higher x. This revised version was published online in September 2006 with corrections to the Cover Date.     

Influence of electric current and magnetic field on terahertz photoconductivity in Pb1 − x Sn x Te(In)

Photoconductivity of Pb_{1 ? x} Sn _x Te(In) solid solutions in the terahertz spectral range is defined by a new type of local electron states linked to the quasi-Fermi level. The paper deals with investigation of the influence of electric current and magnetic field on the amplitude of the terahertz photoconductivity in Pb_{1 ? x} Sn _x Te(In) alloys of different composition. It is shown that the density of local electron states responsible for the positive persistent photoconductivity decreases with increasing electric current via a sample, as well as with transition to the hole conductivity in samples with a high content of tin telluride (x > 0.26). It is found that the magnetic field dependence of the positive photoconductivity is non-monotonous and has a maximum. The maximum position in magnetic field is proportional to the terahertz radiation quantum energy. Mechanisms responsible for the effects observed are discussed.     

A simple statistical phenomenological model for cation substitutions in Nd1+ x Ba2− x Cu3O7−δ+ x /2

The first results are presented of calculations using a quite simple phenomenological model developed to simulate the cationic substitutions in Nd_{1+ x} Ba_{2? x} Cu₃O_{7+ x /2?δ} (Nd123). Although elementary concepts from statistical mechanics are used in the model, significant results have been obtained, such as the reconstruction of the substitution region limits and their dependence on temperature. Particularly interesting is the prediction of strong temperature dependence for the minimum substitution parameter, x _min.     

Intracenter luminescence of Mn2+ in Cd1−x MnxTe and Cd1−x−y MnxMgyTe under intense optical pumping

A comparative analysis of the kinetic properties of intracenter 3d luminescence of Mn²⁺ ions in the dilute magnetic superconductors Cd_1?x Mn_xTe and Cd_1?x?y Mn_xMg_yTe is carried out. The influence of relative concentrations of the cation components on the position of the intracenter luminescence peak indicates that the introduction of magnesium enhances crystal field fluctuations. As a result, the processes facilitating nonlinear quenching of luminescence are suppressed. The kinetics of 3d-luminescence quenching in Cd_1?x Mn_xTe are accelerated considerably upon elevation of optical excitation level due to the evolution of cooperative processes in the system of excited manganese ions.     

Probing of local electron states in Pb1 − x Sn x Te(In) narrow-gap semiconductors by laser terahertz radiation

Local electron states in indium-doped lead telluride-based solid solutions exhibit a number of features which separate them from the diversity of impurity states in semiconductors. These features are most pronounced in terahertz photoconductivity. The results of the corresponding experiments performed during the last years and supported by the Russian Foundation for Basic Research are reviewed.     

LaAg x In1−x

The structures of LaAg _x In_1–x alloys withx=0.75, 0.89 are determined by neutron diffraction on powder samples. The space group isI4/mmm (D _4h ^/17 ). The lattice constants splitting, the order parameter and the mean square vibrational amplitudes of the atoms are given in the temperature range from 20 KT300 K.     

Pulsed EPR spectroscopy of Gd3+ centers in Ca1−x R x F2+x (R=La, Y) mixed crystals

A study of Gd³⁺ centers in Ca_1?x R _x F_2+x (R=La, Y) crystals using pulsed EPR spectroscopy is presented. The echo-induced EPR (ESE-EPR) spectrum shows, besides the signal of slightly perturbed cubic Gd³⁺ centers, a broad signal at g≈2 due to Gd³⁺ centers at low symmetry sites. To describe the effects of R³⁺ ions on the EPR Gd³⁺, a model, including cubic and linear R³⁺?2F _i ^? centers, is developed. Its predictions are compared with the experimental results. The composition dependence of the EPR signal due to slightly perturbed cubic Gd³⁺ centers in mixed Ca_1?x R _x F_2+x crystals is explained taking into account the different clustering tendency in La and Y crystals. Moreover, the formation of mixed clusters involving R³⁺ and Gd³⁺ ions is proposed for both series of samples. A greater clustering trend is found in the Y crystals than in the La ones. Gd³⁺ ions are found to be a “non innocent” paramagnetic probe for structural studies in these mixed crystals.     

Anomalies of the static dielectric constant of Pb1−x Ge x Te

The static dielectric constant of Pb_1–x Ge _x Te (0x0.05) has been determined from differential capacitance measurements on Schottky-barriers in the temperature range of 4.2–300 K. A comparison with data deduced from the phonon frequencies via the Lyddane-Sachs-Teller relation shows substantial discrepancies which are attributed to lattice defects.Work supported by Jubiläumsfonds der Österreichischen Nationalbank     

Optical Absorption in (Pb0.78Sn0.22)1–x In x Te

The spectral dependences of the absorption coefficient are investigated in (Pb_0.78Sn_0.22)_1–x In _x Te at T = 300 K, with the content of indium in the mix x = 0.001–0.050. Two additional-absorption lines exhibiting sharp red margins are found in the () spectra from all the specimens examined. It is shown that they are associated with the optical ionization of the sites, whose energy levels E ₀ and E ₁are located in the forbidden band. It is established that the energy parameters of the E ₀ and E ₁ bands (position of the maxima of the state density function and the half width) do not depend on x. It is demonstrated that the E ₀ band is accounted for by indium located in the sublattice sites. It is found out that the indium concentration in the sites differs from its content in the mix. No changes testifying to the hopping conduction via the impurity states of indium are found in the energy spectrum from (Pb_0.78Sn_0.22)_1–x In _x Te.