Synthesis and optical properties of CuInS2 thin films prepared by sulfurization of electrodeposited Cu‐In layers

The chalcopyrite CuInS₂ thin film was fabricated at 500 °C for 2 h by sulfurization of Cu‐In layers (as precursors) that were sulfurized in a glass tube with pure sulfur powder. The structural, morphological, and optical properties of CuInS₂ thin films are characterized using X‐ray diffraction (XRD), field‐emission scanning electron microscope (FE‐SEM), and UV/Visible/NIR spectrophotometer. The study of UV/Visible/NIR absorption shows the band gap energy value of CuInS₂ thin films is 1.5 eV. The XRD pattern shows the film is pure CuInS₂; no other peaks, such as CuS or CuIn₅S₈ were observed. Furthermore, the surface of the CuInS₂ film is compact characterized by FE‐SEM, which also shows the disappearance of CuS on the surface at 500 °C.     

T(x) phase diagram of the CuSbS2–CuInS2 system and solubility limit of Sb in CuInS2

The starting ternary compounds CuInS₂ and CuSbS₂ and alloys of the CuSbS₂–CuInS₂ system with the molar fractions of CuInS₂ (x) equal to 0.05, 0.15, 0.25, 0.375, 0.50, 0.625, 0.75, 0.85, and 0.95 were prepared and the phase relations in this system were investigated by X‐ray powder diffraction, optical microscopy, scanning electron microscopy, and differential thermal analysis. It was shown that the T–x phase diagram of the CuInS₂–CuSbS₂ system has a eutectic character with the eutectic temperature of 807 K. The alloys of the CuSbS₂–CuInS₂ system with the molar fraction of CuInS₂ in the range from 0.038 to 0.941 at room temperature are two‐phased, and the limits of solubility are 0.059 molar fractions for CuSbS₂ in CuInS₂ and 0.038 molar fractions for CuInS₂ in CuSbS₂.     

Luminescence characteristics of undoped and Eu‐doped GdCa4O(BO3)3 single crystals and nanopowders

Single crystals of GdCa₄O(BO₃)₃ (GdCOB) pure and doped with Eu concentration of 1 and 4 at% were grown by the Czochralski and micropulling‐down methods. The distribution of Eu ions in GdCOB crystals was uniform. The substitutions of Eu³⁺ in Gd, Ca(1) and Ca(2) cation sites and eventually formation Eu²⁺ have been investigated. The spectroscopic properties of crystals are compared with the properties of nanopowders obtained by sol‐gel method. Radioluminescence spectra of undoped GdCOB crystal show the characteristic emission of Gd³⁺ at about 312 nm, whereas this emission dramatically decreases in Eu‐doped crystals upon X‐ray excitation, as well as in Eu‐doped nanopowders excited in vacuum ultraviolet (VUV) region. The VUV excitation in the range 125‐333 nm for Eu‐doped samples leads to strong emission in red coming from the ⁵D₀ multiplet of Eu³⁺, only. In the photoluminescence decay kinetics of 312 nm emissions substantial shortening and departure for single exponential decay in Eu‐doped samples is clearly observed. Higher Eu doping results in further acceleration of the decay. In undoped GdCOB crystal, the lifetime of the Gd^{3+ 6}P_7/2 multiplet is 2.79 ms. The Eu^{3+ 5}D₀ decay kinetics monitored at 613 nm are rather constant. Numerical fitting of fully exponential curves, reveals lifetimes 2.7 ms for nanopowder and 2.5 ms for single crystal. The results suggest that this material may be used as a red phosphor in plasma display panels in nanopowder form because of strong excitation band of Eu³⁺ luminescence in the 160‐200 nm regions. Contrary to nanopowder sample, such an excitation band, attributed to the Gd³⁺–O^2– charge transfer was not observed in crystal obtained by the micropulling‐down method. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Infrared photoluminescence from TlGaS2 layered single crystals

Photolimuniscence (PL) spectra of TlGaS₂ layered crystals were studied in the wavelength region 500‐1400 nm and in the temperature range 15‐115 K. We observed three broad bands centered at 568 nm (A‐band), 718 nm (B‐band) and 1102 nm (C‐band) in the PL spectrum. The observed bands have half‐widths of 0.221, 0.258 and 0.067 eV for A‐, B‐, and C‐bands, respectively. The increase of the emission band half‐width, the blue shift of the emission band peak energy and the quenching of the PL with increasing temperature are explained using the configuration coordinate model. We have also studied the variations of emission band intensity versus excitation laser intensity in the range from 0.4 to 19.5 W cm^‐2. The proposed energy‐level diagram allows us to interpret the recombination processes in TlGaS₂ crystals. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth of CuInS2 single crystals from Sb2S3 and Bi2S3 solutions

The phase diagrams of the CuInS₂‐Sb₂S₃ and CuInS₂‐Bi₂S₃ systems were investigated using X‐ray powder diffraction and differential thermal analysis. Based on these results, the compositions for the growth of the CuInS₂ single crystals from CuInS₂‐Sb₂S₃ and CuInS₂‐Bi₂S₃ melts were selected and Bridgman crystal growth process was performed. The investigation of the obtained single crystals using X‐ray powder diffraction and optical absorption spectra indicates that the incorporation of the solvent atoms into the crystal lattice is absent. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Luminescence of GeO2 glass, rutile-like and α-quartz-like crystals

The luminescence of GeO₂ rutile-like crystals was studied. Crystals were grown from a melt of germanium dioxide and sodium bicarbonate mixture. Luminescence of the crystal was compared with that of sodium germanate glasses produced in reduced and oxidized conditions. A luminescence band at 2.3 eV was observed under N₂ laser (337 nm). At higher excitation photon energies and X-ray excitation an additional band at 3 eV appears in luminescence. The band at 2.3 eV possesses intra-center decay time constant about 100 μs at 290 K and about 200 μs at low temperature. Analogous luminescence was obtained in reduced sodium germanate glasses. No luminescence was observed in oxidized glasses under nitrogen laser, therefore the luminescence of rutile-like crystal and reduced sodium germanate glass was ascribed to oxygen-deficient luminescence center modified by sodium. The band at 2.3 eV could be ascribed to triplet-singlet transition of this center, whereas the band at 3 eV, possessing decay about 0.2 μs, could be ascribed to singlet-singlet transitions. Both bands could be excited in recombination process with decay kinetics determined by traps, when excitation realized by ArF laser or ionizing irradiation with X-ray or electron beam. Another luminescence band at 3.9 eV in GeO₂ rutile-like crystal was obtained under ArF laser in the range 100-15 K. Damaging e-beam irradiation of GeO₂ crystal with α-quartz structure induces similar luminescence band.     

Photoconductivity and photoluminescence in chemically deposited (Cd‐Zn)S:CdCl2,Tb films

Results of SEM, EDX and XRD studies, Optical Absorption spectra, Photoconductivity (PC) rise and decay, PC excitation spectra and Photoluminescence (PL) emission spectra are presented for (Cd‐Zn)S:CdCl₂, Tb films prepared by chemical deposition method on glass substrates either at room temperature (RT) or at 60 °C in a water bath (WB). SEM studies show ball type structure which is related to layered growth. EDX measurements show excess of Cd in such preparations along with the presence of Tb. XRD studies show prominent diffraction lines of CdS and ZnS along with lines of CdCl₂ and impurity. The values of strain (ε), grain size (D), and dislocation density (δ) are evaluated from XRD studies and the nature of crystallinity of the films are discussed. Optical Absorption spectra also show the presence of Tb in the lattice corresponding to the transition ⁷F₆(4f⁸) → ⁵D₀(5d¹4f⁷) of Tb³⁺ ions. From results of optical absorption spectra, the band gaps are determined, whose values are quite similar to those obtained from PC excitation spectra. Sufficiently high photo current (I_pc) to dark current (I_dc) ratios with a maximum value of the order of 10⁶ are observed. This high photosensitisation is related to increase in mobility and lifetime of carriers due to photo excitation. PL emission spectra consist of peaks due to transitions in Tb levels. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Temperature and excitation intensity tuned photoluminescence in Tl4GaIn3S8 layered single crystals

Photoluminescence spectra of Tl₄GaIn₃S₈ layered crystals grown by Bridgman method have been studied in the wavelength region of 500–780 nm and in the temperature range of 26–130 K with extrinsic excitation source (λ_exc = 532 nm), and at T = 26 K with intrinsic excitation source (λ_exc = 406 nm). Three emission bands A, B and C centered at 514 nm (2.41 eV), 588 nm (2.11 eV) and 686 nm (1.81 eV), respectively, were observed for extrinsic excitation process. Variations in emission spectra have been studied as a function of excitation laser intensity in the 0.9‐183.0 mW cm^–2 range for extrinsic excitation at T = 26 and 50 K. Radiative transitions from the donor levels located at 0.03 and 0.01 eV below the bottom of the conduction band to the acceptor levels located at 0.81 and 0.19 eV above the top of the valence band were proposed to be responsible for the observed A‐ and C‐bands. The anomalous temperature dependence of the B‐band peak energy was explained by configurational coordinate model. From X‐ray powder diffraction and energy dispersive spectroscopic analysis, the monoclinic unit cell parameters and compositional parameters of Tl₄GaIn₃S₈ crystals were determined, respectively. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Raman,infrared, and optical spectra of some silver(I) sulfamides

Raman and infrared spectra of disilver sulfamide, Ag₂(HNSO₂NH), and tetrasilver sulfamide, Ag₄(NSO₂N), together with their¹⁵N and²H derivatives (at 300 and 80 K), are reported and interpreted. Resonance conditions for the Raman spectrum of the deep red tetrasilver sulfamide is assumed, but no overtone progression of any band is observed. Silver-nitrogen stretching bands appear in the frequency region 300–200 cm^–1. Although the X-ray crystal structures of the compounds reveal short AgAg distances, no frequency assignable to metalmetal stretching vibrations could be clearly located except for Ag₄(NSO₂N) in the case of the strong band at 288 cm^–1 appearing in the infrared only. This band is assigned to a lattice vibration having high frequency due to strong metalmetal interaction. Optical diffuse reflectance and fluorescence emission/excitation spectra are included and compared to the literature data for silver-exchanged zerolites.     

Energy Band Structure of CuInS2 Crystals

In this work the reflectivity spectra and wave-length derivative reflectivity (WDR) spectra of CuInS₂ crystals have been investigated in the region E ≥ E_g. The n = 1, n = 2 and n = 3 excitonic states are determined and contours of exciton lines n = 1 are calculated. The parameters of excitons and bands have been determined for the region of band gap minimum. The main band gaps are determined for Γ-, N- and T-points of the Brillouin zone.     

On the optical absorption and photoluminescence of Er-doped Ge–S–Ga glasses

We have studied the absorption and photoluminescence (PL) of (GeS₂)₈₀(Ga₂S₃)₂₀ glasses doped with 0.17, 0.35 and 1.05 at.% Er. The sharp bands centered at around 660, 810, 980 and 1540 nm in the absorption spectra can be associated with intra 4f-shell transitions in Er³⁺ ions from ⁴I_15/2 level to ⁴F_9/2, ⁴I_9/2, ⁴I_11/2 and ⁴I_13/2 levels, respectively. It has been observed that the absorption edge shifts towards lower energies with increasing Er concentration. A decrease in the absorption coefficient in the range of weak absorption, as well as the host luminescence in more heavily doped samples has been established, which may be associated with less native defects in the glassy structure. The role of excitation wavelength (λ_ex) on the PL emission band at 1540 nm using different Er³⁺-doping level has been evaluated. It has been found that the total PL band remains almost the same under direct excitation of Er³⁺ ions (at λ_ex = 644, 770 and 982 nm), while it becomes narrower under the host excitation (at λ_ex = 532 nm).     

Photoluminescence Spectra of GaS0.75Se0.25 Layered Single Crystals

Photoluminescence (PL) spectra of GaS_0.75Se_0.25 layered single crystals have been studied in the wavelength region of 500‐850 nm and in the temperature range of 10‐200 K. Two PL bands centered at 527 ( 2.353 eV, A‐band) and 658 nm (1.884 eV, B‐band) were observed at T = 10 K. Variations of both bands have been studied as a function of excitation laser intensity in the range from 8 × 10^‐3 to 10.7 W cm^‐2. These bands are attributed to recombination of charge carriers through donor‐acceptor pairs located in the band gap. Radiative transitions from shallow donor levels located 0.043 and 0.064 eV below the bottom of conduction band to acceptor levels located 0.088 and 0.536 eV above the top of the valence band are suggested to be responsible for the observed A‐ and B‐bands in the PL spectra, respectively.     

Structural investigation of sodium borate glasses and melts by Raman spectroscopy.: I. Quantitative evaluation of structural units

Short-range and intermediate range structures of the sodium borate glass system were investigated using Raman spectroscopy to quantify their dependence on Na₂O concentration. High-resolution spectra were collected by Raman spectroscopy using the Q-switched, second-harmonic pulse of a Nd:YAG laser as an excitation source. The system was designed for measurement of the spectra of glasses and melts up to temperatures over 1000 °C with high signal to noise ratio. Use of polarized light and the simultaneous analysis of HH and VH spectra allowed deconvolution of Raman spectra into appropriate bands with high reproducibility. The deconvoluted bands in the high-frequency region of 1100-1600 cm⁻¹ could be assigned to the vibration modes due to the short-range structures of BO₃ and BO₂O⁻ units in the glasses. The band intensity ratios showed a simple linear relationship with the molar ratio, symmetric BO₃ triangle unit, N_3s, to asymmetric BO₂O⁻ triangle unit, N_3a, obtained from ¹¹B-NMR results. These results allowed a quantitative measure for normalizing the spectra leading to a direct comparison of the band intensities. The ring-structures of intermediate range order, boroxol, pentaborate, tetraborate and diborate groups, could be quantified from the spectra in the middle-frequency region. Their trends with Na₂O concentration showed a good consistency with ¹⁰B-NMR results and also Krogh-Moe’s model.     

Highly enhanced f–f transitions of Eu3+ in La2O3 phosphor via citric acid and poly (ethylene glycol) precursor route

The luminescent material europium-activated La₂O₃ have been prepared by the citric acid and poly (ethylene glycol) (PEG) precursor route. Their structures and optical properties were characterized by FT-IR spectrum, X-ray diffraction (XRD), thermogravimetry-differential thermal analysis (TG-DTA), UV–vis spectroscopy, and photoluminescence (PL) spectra, respectively. The results show considerable enhancement of the photoluminescence, especially the Eu³⁺ f–f transition excitation lines and the charge transfer band (CT). The samples can exhibit strong red emission centered at 626 nm excited at either the CT band (300 nm) or the Eu³⁺ f–f transition (396 nm), suggesting the potential application as the red phosphors for ultraviolet light-emitting diodes (LEDs), which can be attributed to the ⁵D₀→⁷F₂ transition of Eu³⁺. The remarkable enhancement of color purity of red emission and the concentration quenching of Eu³⁺ in La₂O₃ were also observed with increasing Eu³⁺ doped concentration.     

Characterization,luminescence and EPR investigations of Eu2+ activated strontium aluminate phosphor

Strong blue-green light emitting Eu doped SrAl₂O₄ phosphor was synthesized by a low-temperature initiated, self-propagating and gas producing combustion process in a very short time (<5 min). The prepared powder was characterized by X-ray diffraction, Fourier-transform infrared spectrometry and scanning electron microscopy. The excitation spectrum shows a peak at 397 nm. Upon excitation at 397 nm, the emission spectrum exhibits a well defined broad band with maximum at 493 nm corresponding to 4f⁶5d → 4f⁷ transition. Electron paramagnetic resonance (EPR) measurements at X-band showed low field signals due to Eu²⁺ ions in SrAl₂O₄:Eu.     

Vacuum ultraviolet excitation of the 2.7 eV emission band in neutron irradiated silica

The temperature dependence of the photoluminescence induced at 2.7 eV by ultraviolet (UV) and vacuum ultraviolet (VUV) excitation of neutron irradiated (10²¹ n/m² and 10²² n/m²) KU1 and KS-4V high purity silica, with different OH content, have been studied. Commercial silica Infrasil 301 has also been studied for comparison. At the highest neutron fluence and at the same temperature, the three irradiated silica grades show similar excitation spectra. Two close UV excitation bands, which show opposite temperature dependence, are observed at 4.8 and 5.1 eV. The 4.8 eV band, related to the triplet–singlet transition in SiODCs(II), decreases on decreasing temperature from 300 to 10 K and the band at 5.1 eV, probably related to SiODCs(I), is observed only at very low temperatures (～10 K). An important VUV excitation structure, observed at low temperature, could also be related to SiODCs(I). A shift of the irradiated bands is detected at low temperature.     

Spectral analysis of a novel Eu2+ activated SiO2–BaO glass ceramics phosphor under UV-LED excitation

A novel Eu²⁺ activated 60SiO₂–40BaO (mol%) glass ceramics phosphor was prepared and the optical properties were investigated. X-ray diffraction (XRD) and Raman spectra confirmed the formation of Ba₂Si₃O₈ nano-crystals in the glass matrix. The Eu²⁺ activated glass ceramics exhibited broad emission band centered at 518 nm due to the 4f⁶5d¹→4f⁷ transition of Eu²⁺. Compared with the glass, the emission intensity of Eu²⁺ activated glass ceramics was much stronger, and the peak wavelength shifted toward shorter wavelength. The photoluminescence excitation (PLE) spectra of the glass ceramics showed an overlap with the main emission region of an ultraviolet light-emitting diode (UV-LED). According to the photoluminescence (PL) spectra, the CIE chromaticity coordinates of the Eu²⁺ activated glass and glass ceramics were calculated. The results indicated that the Eu²⁺ activated glass ceramics containing Ba₂Si₃O₈ nano-crystals can be used as a potential green emitting phosphor under UV-LED excitation.     

Growth and characterization of GaP and GaAs1−xPx

The minority carrier lifetime at low and high excitation densities was determined in VPE layers of GaP and GaAs_?0.2 P_?0.8. The lifetime at high excitation densities, having a value up to ∽350 ns, is one to two orders of magnitude larger than the lifetime at low excitation densities. It is shown that impurities are involved in some saturable killer centres dominating at low excitation densities. In the case of the largest values of the minority carrier lifetime and at a dislocation density of > 10⁵ cm^?2, the non-radiative recombination at high excitation densities is shown to occur at dislocations; at lower values of the minority carrier lifetime the killer action may be due to microprecipitates. These findings also hold for LPE layers of GaP. It is shown that by measuring the minority carrier lifetime as a function of temperature a discrimination is possible between killer action due to diffusion of minorities towards sinks like dislocations or microprecipitates and due to capture by a normal point-defect type recombination centre.     

Excitation intensity and temperature‐dependent photoluminescence and optical absorption in Tl4Ga3InSe8 layered crystals

Photoluminescence (PL) spectra of Tl₄Ga₃InSe₈ layered crystals grown by Bridgman method have been studied in the wavelength region of 600‐750 nm and in the temperature range of 17‐68 K. A broad PL band centered at 652 nm (1.90 eV) was observed at T = 17 K. Variations of emission band has been studied as a function of excitation laser intensity in the 0.13 to 55.73 mW cm^‐2 range. Radiative transitions from donor level located at 0.19 eV below the bottom of conduction band to shallow acceptor level located at 0.03 eV above the top of the valence band were suggested to be responsible for the observed PL band. From X‐ray powder diffraction and optical absorption study, the parameters of monoclinic unit cell and the energy of indirect band gap were determined, respectively. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Optical and kinetic properties of cathodically deposited amorphous tungsten oxide films

Optical properties and the coloration–decoloration kinetics of electrochromic films of amorphous tungsten oxide (a-WO₃), produced by cathodic deposition from a sodium tungstate based aqueous peroxide electrolyte, have been investigated. As films color in 1 N H₂SO₄, sequential appearance of bands with maxima at ∼1 eV, 1.6 eV, 2 eV, and 2.4 eV is observed in their optical absorption and electrosorption spectra, is the same as in the case of reduction of nanosized hydrated-WO₃ colloids with a gradual decrease in their size to that of 12-tungsten polyanions with Keggin structure, indicating the presence of such polytungstates in cathodically deposited a-WO₃, too. When polytungstate is reduced by one electron, an absorption band with a maximum at ∼1.6 eV appears in the optical spectrum of the film. This band corresponds to the optical excitation of charge transfer of the W⁵⁺ → W⁶⁺ type between two adjacent tungsten atoms. The reduction of polytungstate by a second electron with potential shift towards more negative values is accompanied by the appearance of an analogous band with a maximum at ∼2 eV. The reduction of such polytungstates involves participation of the bulk of injected electrons, indicating their dominate role in the nanostructure of the films investigated. The effective co-diffusion coefficient of electrons and protons in cathodically deposited a-WO₃ exhibits a potential dependence with a maximum at 0.1 V against a silver-chloride electrode, where its value is ∼10⁻⁸ cm²/s. It has been shown that the decrease in this coefficient at potential values of over 0.1 V is caused by a decrease in electron mobility.