Enhancement of efficiency of vibration suppression using piezoelectric elements and LR circuit by amplification of electrical resonance

This paper describes a vibration suppression method based on passive vibration suppression using a piezoelectric element and an LR circuit. The proposed method applies a voltage that is proportional to the displacement or acceleration of the host structure to the LR circuit in series. Because the applied voltage equivalently increases the voltage generated by the piezoelectric effect in the piezoelectric element, the effect of the vibration suppression is increased with an increase in the applied voltage. The proposed method is categorized as a hybrid vibration suppression method that involves only an analog circuit. The governing equations were formulated, and the optimum values of the inductance and resistance were theoretically derived using the two fixed point method as well as the passive method. The characteristic features of the proposed method were theoretically investigated by comparing the added stiffness and damping, amount of the applied voltage, and time-averaged power of the applied voltage with those of the conventional methods. In addition, the stability of the proposed method was theoretically analyzed. The effectiveness of the proposed method and the theoretical analysis were verified through experiments.     

GaSb layers with low defect density deposited on (001) GaAs substrate in two-dimensional growth mode using molecular beam epitaxy

We report on the growth of fully relaxed and smooth GaSb layers with reduced density of threading dislocations, deposited on GaAs substrate. We prove that three parameters have to be controlled in order to obtain applicable GaSb buffers with atomically smooth surface: interfacial misfit (IMF), the etch pit density (EPD) and the growth mode.The GaSb/GaAs interfacial misfit array and reduced EPD ≤1.0 × 10⁷ cm^?2 were easily obtained using As-flux reduction for 3 min and Sb-soaking surface for 10 s before the GaSb growth initiation. The successive growth of GaSb layer proceeded under the technological conditions described by the wide range of the following parameters: r_G ∈ (1.5 ÷ 1.9) Å/s, T_G ∈ (400 ÷ 520)°C, V/III ∈ (2.3 ÷ 3.5). Unfortunately, a spiral or 3D growth modes were observed for this material resulting in the surface roughness of 1.1 ÷ 3.0 nm. Two-dimensional growth mode (layer by layer) can only be achieved under the strictly defined conditions. In our case, the best quality 1-μm-thick GaSb buffer layer with atomically smooth surface was obtained for the following set of parameters: r_G = 1.5 Å/s, T_G = 530 °C, V/III = 2.9. The layer was characterized by the strain relaxation over 99.6%, 90° dislocations array with the average distance of 5.56 nm, EPD ～8.0 × 10⁶ cm^?2 and 2D undulated terraces on the surface with roughness of about 1 ML. No mounds were observed. We belive that only thin and smooth GaSb layer with reduced EPD may be applied as the buffer layer in complex device heterostructures. Otherwise, it may cause the device parameters deterioration.     

High-resolution electron energy-loss spectroscopy analysis of Ag(001): discovery of a new surface longitudinal mode using first-principles phonon calculations

We present analysis of electron-energy loss spectra of Ag(001) using first-principles surface phonon and multiple scattering inelastic cross-section calculations. Excellent agreement with experiment is obtained. The study reveals a new longitudinal surface phonon at which causes the measured loss peak to shift as the incident energy is varied. These results demonstrate the importance of using accurate theory for proper interpretation of EELS spectra and indicate that force-constant models with adjustable parameters may be misleading.     

Design, simulation and structural optimization of a longitudinal acoustic resonator for trace gas detection using laser photoacoustic spectroscopy (LPAS)

The design of the acoustic resonator is critical for the optimization of the sensitivity of laser photoacoustic spectroscopy (LPAS) in trace gas detection applications. In this paper, an LC circuit model is used for the simulation of a 1D acoustic resonator. This acoustic resonator is designed for CO photoacoustic spectroscopy. The effects of the structural parameters, quality factor and resonant frequency on the performance of the device are theoretically analyzed. The role of the buffer volume as an acoustic filter is investigated and optimized dimensions of the buffer volume, to achieve minimum noise transmission coefficient, are calculated. The effects of the ambient temperature, variety of pressure and gas flow velocity on the resonant frequency of photoacoustic resonator and PA signal are simulated. The temperature dependence of the microphone sensitivity is also introduced.     

Trace detection of light elements by laser-induced breakdown spectroscopy (LIBS): Applications to non-conducting materials

The existence as well as concentration of light (low-atomic number) elements is directly related to some of the most important properties of almost all materials. Thus, the development of a direct, fast, and sensitive spectroscopic method for the analytical quantification of these elements is considered an important continuing challenge in many fields. In this report, results obtained from previous as well as most recent studies regarding trace detection of light elements in non-conducting materials by laser-induced breakdown spectroscopy (LIBS) technique are reviewed for the first time. Firstly, we introduce investigations performed in the far- and vacuum-UV as well as UV-visible-NIR spectral domains, and cover many non-conducting materials including gases, aerosols, soil, cement, and selected organic compounds. The report also demonstrates important analytical results for the elements lithium, beryllium, boron, carbon, fluorine, phosphorus, sulfur, and chlorine. In addition, key characterization information relating to a specific element in a given matrix and state is summarized in such a way that relevant resources can easily be traced. Furthermore, in order to facilitate tracking down the evolution of the technique for a particular material category, a chronological order has been devised. In the second part of the review, the latest developments and advances in instrumentation and methodologies of the LIBS technique, particularly in the realm of light elements detection, are discussed. The sensitive detection of light elements in the UV-VIS-NIR is still unsatisfactory, and more work is needed in order to achieve better analytical performance in terms of precision, accuracy and limits of detection. The author anticipates that significant sensitivity improvements should be realized by combining LIBS, employing femtosecond laser pulses, with other diagnostic techniques based on probing the plasma via diode lasers.     

CASPT2 and CCSD(T) calculations of dipole moments and polarizabilities of acetone in excited states

The acetone molecule is investigated in its ground state and valence ^1,3n-π*, ^1,3π-π*, and ^1,3σ-π* excited states and Rydberg ^1,3n-3s, ^1,3π-3?, ^1,3n-3p_y and ^1,3π-3p_y states using the CASSCF, CASPT2, and CCSD(T) methods. Equilibrium geometries of excited states are obtained and their changes with respect to the ground state are discussed. For most excited states the C_2v symmetry of the ground state is lowered to the C_s symmetry. A series of valence vertical and adiabatic excitation energies is presented along with excitation energies for Rydberg states. The main body of the paper contains Finite-Field Perturbation Theory (FFPT) calculations of electric properties of the vertically as well as geometry relaxed excited states. Dipole moments of valence excited states decrease significantly upon excitation, being about one half of the ground state dipole moment. Polarizabilities usually change upon excitation much less (increase by about 30%) but hyperpolarizabilities are enhanced up to one or two orders of magnitude. The orientation of the dipole moment is reversed in some vertically excited Rydberg states. Properties of the ground and excited states are discussed considering alterations of the electronic structure and shifts in the geometry.     

Study of interface and surface elastic waves in piezoelectric materials by using the surface Green function matching (SGFM) method

It is shown that the surface Green function matching method can be readily applied to piezoelectric materials by defining a four-dimensional Green function which includes both the elastic and the electrostatic fields. For an interface system this reduces to one half (with respect to the usual treatments) the order of the secular determinant, with consequent saving in computation. As an illustration an application is made to the study of shear horizontal waves for surfaces and interfaces with 6mm symmetry.     

Interproximal dental caries detection using Photothermal Radiometry (PTR) and Modulated Luminescence (LUM)

Frequency-domain photothermal radiometry (FD-PTR or PTR) has been used to detect mechanical holes and demineralized enamel in the interproximal contact area of extracted human teeth. Thirty four teeth were used in a series of experiments. Preliminary tests to detect mechanical holes created by dental burs and 37% phosphoric acid etching for 20 s on the interproximal contact points showed distinct differences in the signal. Interproximal contact areas were demineralized by using a partially saturated acidic buffer system. Each sample pair was examined with PTR before and after micro-machining or treating at sequential treatment periods spanning 6 hours to 30 days. Dental bitewing radio graphs showed no sign of demineralized lesion even for samples treated for 30 days. μ-CT, TMR and SEM analyses were performed. Although μ-CT and TMR measured mineral losses and lesion depths, only SEM surface images showed visible signs of treatment because of the minimal extent of the demineralization. However, the PTR amplitude increased by more than 300% after 80 hours of treatment. Therefore, PTR has been shown to have sufficient contrast for the detection of very early interproximal demineralized lesions. The technique further exhibited excellent signal reproducibility and consistent signal changes in the presence of interproximal demineralized lesions, attributes which render PTR a reliable probe to detect early interproximal demineralization lesions. Modulated luminescence was also measured simultaneously, but it showed a lower ability to detect these interproximal demineralized lesions than PTR.     

利用微悬臂梁表面应力研究聚N-异丙基丙烯酰胺分子的构象转变

提出了一种基于微悬臂梁传感技术研究大分子折叠/构象转变的新方法.通过分子自组装的方法将热敏性的聚N-异丙基丙烯酰胺(PNIPAM)分子链修饰到微悬臂梁的单侧表面,用光杠杆技术检测温度在20-40 ℃之间变化时由于微悬臂梁上的PNIPAM分子在水中的构象转变所引起的微悬臂梁变形.实验结果显示:在升温过程中,微悬臂梁的表面应力发生了变化并且导致微悬臂梁产生了弯曲变形,这个过程对应着微悬臂梁上的PNIPAM分子从无规线团构象到塌缩小球构象的构象转变.在降温过程中,微悬臂梁发生了反方向的弯曲变形,这对应着PNIPAM分子从塌缩小球构象向无规线团构象的构象转变.整个温度变化过程中构象转变是连续进行的,而在低临界溶解温度(约32 ℃)附近转变幅度较大,这与自由水溶液中PNIPAM分子的无规线团-塌缩小球构象转变相对应.实验结果还显示:由于PNIPAM分子在塌缩过程中氢键的形成和链段间可能的缠结效应,整个温度循环过程中微悬臂梁的变形是不可逆的且有明显的迟滞效应.     

窄线宽单纵模沟槽衬底平面条形(AlGa)As激光器的研制及其线宽分析

本文报道了我们所研制的沟槽衬底平面条形(CSP)铝镓砷((AlGa)As)单模激光器,能以单纵模稳定工作,△v<5MHz,并从理论上定性分析了半导体激光器线宽变宽的机理,提出了进一步压窄线宽的方法.     

Levels excited in73Ge by (d,p) and (p,p′) reactions

Angular distributions from the reactions⁷²Ge(d, p)⁷³Ge and⁷³Ge(p, p′)⁷³Ge have been studied with 8.0 MeV deuterons and 12.0 MeV protons, respectively, using the Aldermaston Tandem Van de Graaff generator and multi-angle magnetic spectrograph. The ground stateQ-value of the (d, p) reaction was measured to be 4.571±0.004 MeV. The energies, values of the transferred orbital angular momenta, parities and transition strengths in both reactions were determined by use of distorted-wave Bornapproximation calculations, for levels up to 3 MeV excitation energy. The sums of the transition strengths are compared with shell model calculations as well as with values obtained in neighbouring nuclei. Discrepancies between parity and possible spin assignments of states observed in the two reactions are discussed.     

Performance evaluation for epileptic electroencephalogram (EEG) detection by using Neyman-Pearson criteria and a support vector machine

The diagnosis of several neurological disorders is based on the detection of typical pathological patterns in electroencephalograms (EEGs). This is a time-consuming task requiring significant training and experience. A lot of effort has been devoted to developing automatic detection techniques which might help not only in accelerating this process but also in avoiding the disagreement among readers of the same record. In this work, Neyman-Pearson criteria and a support vector machine (SVM) are applied for detecting an epileptic EEG. Decision making is performed in two stages: feature extraction by computing the wavelet coefficients and the approximate entropy (ApEn) and detection by using Neyman-Pearson criteria and an SVM. Then the detection performance of the proposed method is evaluated. Simulation results demonstrate that the wavelet coefficients and the ApEn are features that represent the EEG signals well. By comparison with Neyman-Pearson criteria, an SVM applied on these features achieved higher detection accuracies.     

Influence of the film thickness and additional elements (Al,O, and N) on the properties of FeCo film structures

The magnetic properties and domain structure of FeCoAlON thin films with thicknesses varying from 55 to 550 nm have been studied, and conditions favoring preparation of FeCoAlON films with uniaxial anisotropy in the direction normal to the film plane, which is required for designing “perpendicular” super-high-density information recording, have been established. In FeCoAlON films with a thickness up to 300 nm, the domain structure consists of cross-linked domain walls, because strong demagnetizing field suppresses formation of stripe domains. After the film thickness has reached 320 nm, cross-linked domain walls transform into stripe domains, with uniaxial anisotropy in the film plane disappearing, to become replaced by uniaxial anisotropy in the direction normal to the film plane, which can be assigned to magnetoelastic stresses induced by nitrogen atoms filling up interstitial space in the (110) plane. A further increase in the film thickness (up to 550 nm) leads to a rotational anisotropy due to the increase of nitrogen concentration in interstitials and the increase of magnetoelastic stresses.     

利用微悬臂梁表面应力研究聚N-异丙基丙烯酰胺分子的构象转变

提出了一种基于微悬臂梁传感技术研究大分子折叠/构象转变的新方法.通过分子自组装的方法将热敏性的聚N-异丙基丙烯酰胺(PNIPAM)分子链修饰到微悬臂梁的单侧表面，用光杠杆技术检测温度在20—40℃之间变化时由于微悬臂梁上的PNIPAM分子在水中的构象转变所引起的微悬臂梁变形.实验结果显示：在升温过程中，微悬臂梁的表面应力发生了变化并且导致微悬臂梁产生了弯曲变形，这个过程对应着微悬臂梁上的PNIPAM分子从无规线团构象到塌缩小球构象的构象转变.在降温过程中，微悬臂梁发生了反方向的弯曲变形，这对应着PNIPA 关键词： 构象转变 聚N-异丙基丙烯酰胺分子链 表面应力 微悬臂梁     

Dissociation mechanism of electronically excited CHn (n = 3–5) neutrals formed by near-resonant neutralization using charge inversion mass spectrometry

Charge inversion mass spectrometry was used to produce the electronically excited species CH_n (n=3–5) from their corresponding positive ions by neutralization with an alkali metal target, and then to subsequently detect and mass-analyze the negative ions formed from the neutral fragments produced from the dissociation of the excited neutrals. The trapezoidal shape and the intensity of the peak associated with CH₂^- ions in the charge inversion spectrum of CH₃⁺ ions indicated that the CH₃ neutrals dissociated mainly into CH₂ + H without a large activation barrier. The most intense peak in the spectrum of CH₄⁺ ions was that associated with CH₂^- ions, and this peak comprised a combination of both trapezoidal and triangular shaped peaks. The trapezoidal shaped peak was attributed to CH₂^- ions resulting from direct dissociation of CH₄ into CH₂ + H₂. The concurrent dissociation of CH₄ into CH₃ + H was followed by the further subsequent dissociation of the deformed CH₃ fragments into CH₂ + H, and this was proposed to be the origin of the triangular shaped component of the CH₂^- peak. In the spectrum of CH₅⁺ ions, the CH₃^- peak was much less intense than the CH₂^- peak, which was proposed to be the result of the geometry of the CH₃, formed from the dissociation of CH₅ into CH₃ + H₂,being substantially distorted from the D_3h symmetry, leading to its further subsequent dissociation.     

6 MHz BAW resonators fabricated using new piezoelectric crystals PrCa4O(BO3)3 and NdCa4O(BO3)3

Thickness shear mode Bulk Acoustic Wave (BAW) resonators with frequency of 6 MHz, were fabricated using monoclinic piezoelectric crystals PrCa₄O(BO₃)₃ (PrCOB) and NdCa₄O(BO₃)₃ (NdCOB). Zero temperature coefficient of frequency (TCF) characteristics were achieved over the temperature range of –140 °C to 200 °C for (YXt)–1.5° cut PrCOB and (YXt)15° cut NdCOB, with the turnover temperature at 20 °C. The electromechanical coupling factor k₂₆ and the piezoelectric coefficient d₂₆ were determined to be 30.2% and 15.8 pC/N for PrCOB, 29.0% and 15.1 pC/N for NdCOB resonators, respectively. The temperature independent frequency behavior, large coupling factor, high piezoelectric coefficient, together with noticeable mechanical quality factors (Q > 2,500), make PrCOB and NdCOB crystals good candidates for sensing applications with expanded temperature usage range. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Selective mode suppression in microstrip differential lines by means of electric-LC (ELC) and magnetic-LC (MLC) resonators

In this paper, it is demonstrated that the so-called electric-LC (ELC) resonators, and their dual counterparts, the magnetic-LC (MLC) resonators, are useful for the selective suppression of either the differential or the common mode in microstrip differential lines. The key point to mode suppression is the alignment of the resonator with the electric (differential mode) or magnetic (common mode) wall of the line. It is shown that by simply rotating the resonators 90^° we can selectively choose the suppressed mode in the vicinity of the resonator’s fundamental resonance frequency. The theory is validated through full-wave electromagnetic simulation, the lumped element equivalent circuit models of the proposed structures and experimental data.     

Levels of 234U and 236U excited by the (d,d') reaction

The energy levels of ²³⁴U and ²³⁶U have been studied through the inelastic scattering of 16 MeV douterons. A magnetic spectrograph was used to momentum-analyse the scattered deuterons at θ = 90° and 125°. Excited in both ²³⁴U and ²³⁶U were the ground state bands up to and including the 8⁺ members, the K^π = 0⁺β-vibrations, the K^π = 2⁺γ-vibrations, and the K^π = 0^? octupole vibrational bands. In ²³⁴U, additional levels at 1023 and 1126 keV are ascribed to a K^π = 2^? band, levels at 1238, 1312, and 1446 keV are identified as members of either a K^π = 0^? or 1^? configuration, and other tentative assignments are made for members of K^π = 1^? and 3^? configurations. Relative reduced transition probabilities, B(E2), to the 2⁺ rotational and γ-vibrational states are generally found to be in good agreement with Coulomb excitation measurements. Relative B(E3) values for the 3^? states excited are slightly higher than the predictions of a microscopic theory of octupole vibrations.