Reactivity of sub 1 nm supported clusters: (TiO2)n clusters supported on rutile TiO2 (110)

Metal oxide clusters of sub-nm dimensions dispersed on a metal oxide support are an important class of catalytic materials for a number of key chemical reactions, showing enhanced reactivity over the corresponding bulk oxide. In this paper we present the results of a density functional theory study of small sub-nm TiO(2) clusters, Ti(2)O(4), Ti(3)O(6) and Ti(4)O(8) supported on the rutile (110) surface. We find that all three clusters adsorb strongly with adsorption energies ranging from -3 eV to -4.5 eV. The more stable adsorption structures show a larger number of new Ti-O bonds formed between the cluster and the surface. These new bonds increase the coordination of cluster Ti and O as well as surface oxygen, so that each has more neighbours. The electronic structure shows that the top of the valence band is made up of cluster derived states, while the conduction band is made up of Ti 3d states from the surface, resulting in a reduction of the effective band gap and spatial separation of electrons and holes after photon absorption, which shows their potential utility in photocatalysis. To examine reactivity, we study the formation of oxygen vacancies in the cluster-support system. The most stable oxygen vacancy sites on the cluster show formation energies that are significantly lower than in bulk TiO(2), demonstrating the usefulness of this composite system for redox catalysis.     

Tuning LDA+U for electron localization and structure at oxygen vacancies in ceria

We examine the real space structure and the electronic structure (particularly Ce4f electron localization) of oxygen vacancies in CeO(2) (ceria) as a function of U in density functional theory studies with the rotationally invariant forms of the LDA+U and GGA+U functionals. The four nearest neighbor Ce ions always relax outwards, with those not carrying localized Ce4f charge moving furthest. Several quantification schemes show that the charge starts to become localized at U approximately 3 eV and that the degree of localization reaches a maximum at approximately 6 eV for LDA+U or at approximately 5.5 eV for GGA+U. For higher U it decreases rapidly as charge is transferred onto second neighbor O ions and beyond. The localization is never into atomic corelike states; at maximum localization about 80-90% of the Ce4f charge is located on the two nearest neighboring Ce ions. However, if we look at the total atomic charge we find that the two ions only make a net gain of (0.2-0.4)e each, so localization is actually very incomplete, with localization of Ce4f electrons coming at the expense of moving other electrons off the Ce ions. We have also revisited some properties of defect-free ceria and find that with LDA+U the crystal structure is actually best described with U=3-4 eV, while the experimental band structure is obtained with U=7-8 eV. (For GGA+U the lattice parameters worsen for U>0 eV, but the band structure is similar to LDA+U.) The best overall choice is U approximately 6 eV with LDA+U and approximately 5.5 eV for GGA+U, since the localization is most important, but a consistent choice for both CeO(2) and Ce(2)O(3), with and without vacancies, is hard to find.     

The two-dimensional band structure of (polyphthalocyaninato)Ni(II)

The two-dimensional (2D) band structure of (polyphthalocyaninato)Ni(II), Ni(ppc), has been analyzed by a self-consistent field (SCF ) Hartree–Fock (HF ) crystal orbital (CO ) formalism based on an INDO (intermediate neglect of differential overlap) type Hamiltonian. The calculated HF band gap of Ni(ppc) amounts to 0.24 eV. The highest filled band is a ringlike a_1u combination (D_4h symmetry label) localized at the carbon sites of the organic fragment. Remarkable hybridization in the valence band leads to the considerable band width Δ?_v of 2.92 eV. This value is close to the Δ?_v numbers which are conventionally encountered in one-dimensional metallomacrocycles. The effective width of the states in Ni(ppc) is 13.8 eV. In graphite a net π interval of 13.0 eV is predicted by the present CO formalism; i.e., the energetic distribution of the π electrons is roughly comparable in both 2D solids. The Ni 3d states in Ni(ppc) are far below the Fermi level which is calculated at ?4.9 eV; they are predicted between ?12.2 and ?16.4 eV in the mean-field approximation. Quasi-particle corrections lead to a significant shift of these strongly metal-centered states. Important electronic structure properties of Ni(ppc) are compared with those of 1D metallomacrocycles with similar molecular stoichiometry. The total density of states distribution of Ni(ppc) has been fragmented into projected (ligand π and σ, Ni 3d) contributions in order to allow for a transparent interpretation of the 2D band structure.     

Probing the 4f states of ceria by tunneling spectroscopy

Low-temperature scanning tunneling microscopy and spectroscopy have been employed to analyze the local electronic structure of the (111) surface of a ceria thin film grown on Ru(0001). On pristine, defect-free oxide terraces, the empty 4f states of Ce(4+) ions appear as the only spectral feature inside the 6 eV oxide band gap. In contrast, occupied states are detected between -1.0 and -1.5 eV below E(Fermi) in conductance spectra of different point and line defects, such as surface oxygen vacancies, grain boundaries and step edges. They are assigned to partially filled 4f states localized at the Ce(3+) ions. The presence of excess electrons indicates the oxygen-deficient nature of the direct oxide environment. The f state spectroscopy with the STM allows us to probe the spatial distribution of Ce(3+) ions in the ceria surface, providing unique insight into the local reduction state of this chemically important material system.     

Chemical activity of photoinduced Ti3+ centers in titanium oxide gels

We report on the chemical activity of trapped electrons in wet titanium oxide gels. These electrons are generated under the band gap irradiation of gels in the spectral range between 3.25 and 4.4 eV and stored as Ti3+ centers that absorb in the visible. Chemical processes in photoirradiated gels are generally similar to those earlier reported in TiO2 colloids; however, peculiarities exist. In particular, a high internal surface of gels strongly enhances interface reactions. Measurements of UV-visible absorption kinetics allow conclusions to be made about extremely high available traps concentration and the activity of all trapped electrons toward nitrate and nitrite anion reduction according to a heterogeneous photocatalytic mechanism.     

Band gap engineering of bulk ZrO2 by Ti doping

It has been experimentally observed that Ti doping of bulk ZrO(2) induces a large red-shift of the optical absorption edge of the material from 5.3 to 4.0 eV [Livraghi et al., J. Phys. Chem. C, 2010, 114, 18553-18558]. In this work, density functional calculations based on the hybrid functional B3LYP show that Ti dopants in the substitutional position to Zr in the tetragonal lattice cause the formation of an empty Ti 3d band about 0.5 eV below the bottom of the conduction band. The optical transition level ε(opt)(0/-1) from the topmost valence state to the lowest empty Ti impurity state is found at 4.9 eV in a direct band gap of 5.7 eV. The calculated shift is consistent with the experimental observation. The presence of Ti(3+) species in Ti-doped ZrO(2), probed by means of electron paramagnetic resonance (EPR), is rationalized as the result of electron transfers from intrinsic defect states, such as oxygen vacancies, to substitutional Ti(4+) centers.     

Oxygen vacancy formation energy in Pd-doped ceria: a DFT+U study

Using the DFT+U method, i.e., first principles density functional theory calculations with the inclusion of on-site Coulomb interaction, the effects of Pd doping on the O vacancy formation energy (E(vac)) in CeO(2) has been studied. We find that E(vac) is lowered from 3.0 eV in undoped ceria to 0.6 eV in the Pd-doped compound. Much of this decrease can be attributed to emerging Pd-induced gap states above the valence band and below the empty Ce 4f states. These localized defect states involve the Pd ion and its nearest neighbors, which are also the main acceptors of the extra electrons left on reduction. The effect of the Pd dopant on the geometric structure is very modest for CeO(2) but considerable for CeO(2-x).     

Origin of photoactivity of nitrogen-doped titanium dioxide under visible light

Nitrogen-doped titanium dioxide (N-TiO2), a photocatalytic material active in visible light, has been investigated by a combined experimental and theoretical approach. The material contains single-atom nitrogen impurities that form either diamagnetic (Nb-) or paramagnetic (Nb*) bulk centers. Both types of Nb centers give rise to localized states in the band gap of the oxide. The relative abundance of these species depends on the oxidation state of the solid, as, upon reduction, electron transfer from Ti3+ ions to Nb* results in the formation of Ti4+ and Nb-. EPR spectra measured under irradiation show that Nb centers are responsible for visible light absorption with promotion of electrons from the band gap localized states to the conduction band or to surface-adsorbed electron scavengers. These results provide a characterization of the electronic states associated with N impurities in TiO2 and, for the first time, a picture of the processes occurring in the solid under irradiation with visible light.     

Quasiparticle Band Structures of Defects in Anatase TiO2 Bulk

Quasiparticle band structures of the defective anatase TiO₂ bulk with O vacancy, Ti interstitial and H interstitial are investigated by the GW method within many-body Green's function theory. The computed direct band gap of the perfect anatase bulk is 4.3 eV, far larger than the experimental optical absorption edge (3.2 eV). We found that this can be ascribed to the inherent defects in anatase which drag the conduction band (CB) edge down. The occupied band-gap states induced by these defects locate close to the CB edge, excluding the possible contribution of these bulk defects to the deep band-gap state below CB as observed in experiments.     

Crystal and electronic structure and magnetic properties of divalent europium perovskite oxides EuMO3 (M = Ti, Zr, and Hf): experimental and first-principles approaches

A comparative study of the crystal and electronic structure and magnetism of divalent europium perovskite oxides EuMO(3) (M = Ti, Zr, and Hf) has been performed on the basis of both experimental and theoretical approaches playing complementary roles. The compounds were synthesized via solid-state reactions. EuZrO(3) and EuHfO(3) have an orthorhombic structure with a space group Pbnm at room temperature contrary to EuTiO(3), which is cubic at room temperature. The optical band gaps of EuZrO(3) and EuHfO(3) are found to be about 2.4 and 2.7 eV, respectively, much larger than that of EuTiO(3) (0.8 eV). On the other hand, the present compounds exhibit similar magnetic properties characterized by paramagnetic-antiferromagnetic transitions at around 5 K, spin flop at moderate magnetic fields lower than 1 T, and the antiferromagnetic nearest-neighbor and ferromagnetic next-nearest-neighbor exchange interactions. First-principles calculations based on a hybrid Hartree-Fock density functional approach yield lattice constants, band gaps, and magnetic interactions in good agreement with those obtained experimentally. The band gap excitations are assigned to electronic transitions from the Eu 4f to Mnd states for EuMO(3) (M = Ti, Zr, and Hf and n = 3, 4, and 5, respectively).     

Probing the electronic structure and band gap evolution of titanium oxide clusters (TiO(2))(n)(-) (n = 1-10) using photoelectron spectroscopy

TiO2 is a wide-band-gap semiconductor, and it is an important material for photocatalysis. Here we report an experimental investigation of the electronic structure of (TiO2)n clusters and how their band gap evolves as a function of size using anion photoelectron spectroscopy (PES). PES spectra of (TiO2)n- clusters for n = 1-10 have been obtained at 193 nm (6.424 eV) and 157 nm (7.866 eV). The high photon energy at 157 nm allows the band gap of the TiO2 clusters to be clearly revealed up to n = 10. The band gap is observed to be strongly size-dependent for n < 7, but it rapidly approaches the bulk limit at n = 7 and remains constant up to n = 10. All PES features are observed to be very broad, suggesting large geometry changes between the anions and the neutral clusters due to the localized nature of the extra electron in the anions. The measured electron affinities and the energy gaps are compared with available theoretical calculations. The extra electron in the (TiO2)n- clusters for n > 1 appears to be localized in a tricoordinated Ti atom, creating a single Ti3+ site and making these clusters ideal molecular models for mechanistic understanding of TiO2 surface defects and photocatalytic properties.     

Syntheses, structures, physical properties, and electronic properties of some AMUQ3 compounds (A = alkali metal, M = Cu or Ag, Q = S or Se)

The seven new isostructural quaternary uranium chalcogenides KCuUS 3, RbCuUS 3, RbAgUS 3, CsCuUS 3, CsAgUS 3, RbAgUSe 3, and CsAgUSe 3 were prepared from solid-state reactions. These isostructural materials crystallize in the layered KZrCuS 3 structure type in the orthorhombic space group Cmcm. The structure is composed of UQ 6 octahedra and MQ 4 tetrahedra that share edges to form (2) infinity[UMQ 3 (-)] layers. These layers stack perpendicular to [010] and are separated by layers of face- and edge-sharing AQ 8 bicapped trigonal prisms. There are no Q-Q bonds in the structure, so the formal oxidation states of A/U/M/Q may be assigned as 1+/4+/1+/2-, respectively. CsCuUS 3 shows semiconducting behavior with thermal activation energy E a = 0.14 eV and sigma 298 = 0.3 S/cm. From single-crystal absorption measurements in the near IR range, the optical band gaps of these compounds are smaller than 0.73 eV. The more diffuse 5f electrons play a much more dominant role in the optical properties of the AMUQ 3 compounds than do the 4f electrons in the AMLnQ 3 compounds (Ln = rare earth). Periodic DFT spin band-structure calculations on CsCuUS 3 and CsAgUS 3 establish two energetically similar antiferromagnetic spin structures and show magnetic interactions within and between the layers of the structure. Density-of-states analysis shows M-Q orbital overlap in the valence band and U-Q orbital overlap in the conduction band.     

N／F掺杂和N-F双掺杂锐钛矿相TiO2（101）表面电子结构的第一性原理计算

采用密度泛函理论(DFT)平面波赝势方法计算了N/F掺杂和N-F双掺杂锐钛矿相TiO2(101)表面的电子结构.由于DFT方法存在对过渡金属氧化物带隙能的计算结果总是与实际值严重偏离的缺陷,本文也采用DFT+U(Hubbard系数)方法对模型的电子结构进行了计算.DFT的计算结果表明N掺杂后,N2p轨道与O 2p和Ti 3d价带轨道的混合会导致TiO2带隙能的降低,而F掺杂以及氧空位的引入对材料的电子结构没有明显的影响.DFT+U的计算却给出截然不间的结果,N掺杂并没有导致带隙能的降低,而只是在带隙中引入一个孤立的杂质能级,反而F掺杂以及氧空位的引入带来明显的带隙能降低.DFT+U的计算结果与一些实验测量结果能够较好地符合.     

N/F掺杂和N-F双掺杂锐钛矿相TiO2(101)表面电子结构的第一性原理计算

采用密度泛函理论(DFT)平面波赝势方法计算了N/F掺杂和N-F双掺杂锐钛矿相TiO2(101)表面的电子结构. 由于DFT方法存在对过渡金属氧化物带隙能的计算结果总是与实际值严重偏离的缺陷, 本文也采用DFT+U(Hubbard 系数)方法对模型的电子结构进行了计算. DFT的计算结果表明N掺杂后, N 2p轨道与O 2p和Ti 3d价带轨道的混合会导致TiO2带隙能的降低, 而F掺杂以及氧空位的引入对材料的电子结构没有明显的影响. DFT+U的计算却给出截然不同的结果, N掺杂并没有导致带隙能的降低, 而只是在带隙中引入一个孤立的杂质能级, 反而F掺杂以及氧空位的引入带来明显的带隙能降低. DFT+U的计算结果与一些实验测量结果能够较好地符合.     

Anhydrous crystals of DNA bases are wide gap semiconductors

We present the structural, electronic, and optical properties of anhydrous crystals of DNA nucleobases (guanine, adenine, cytosine, and thymine) found after DFT (Density Functional Theory) calculations within the local density approximation, as well as experimental measurements of optical absorption for powders of these crystals. Guanine and cytosine (adenine and thymine) anhydrous crystals are predicted from the DFT simulations to be direct (indirect) band gap semiconductors, with values 2.68 eV and 3.30 eV (2.83 eV and 3.22 eV), respectively, while the experimentally estimated band gaps we have measured are 3.83 eV and 3.84 eV (3.89 eV and 4.07 eV), in the same order. The electronic effective masses we have obtained at band extremes show that, at low temperatures, these crystals behave like wide gap semiconductors for electrons moving along the nucleobases stacking direction, while the hole transport are somewhat limited. Lastly, the calculated electronic dielectric functions of DNA nucleobases crystals in the parallel and perpendicular directions to the stacking planes exhibit a high degree of anisotropy (except cytosine), in agreement with published experimental results.     

Characterizing TiO2(110) surface states by their work function

The unreconstructed TiO(2)(110) surface is prepared in well-defined states having different characteristic stoichiometries, namely reduced (r-TiO(2), 6 to 9% surface vacancies), hydroxylated (h-TiO(2), vacancies filled with OH), oxygen covered (ox-TiO(2), oxygen adatoms on a stoichiometric surface) and quasi-stoichiometric (qs-TiO(2), a stoichiometric surface with very few defects). The electronic structure and work function of these surfaces and transition states between them are investigated by ultraviolet photoelectron spectroscopy (UPS) and metastable impact electron spectroscopy (MIES). The character of the surface is associated with a specific value of the work function that varies from 4.9 eV for h-TiO(2), 5.2 eV for r-TiO(2), 5.35 eV for ox-TiO(2) to 5.5 eV for qs-TiO(2). We establish the method for an unambiguous characterization of TiO(2)(110) surface states solely based on the secondary electron emission characteristics. This is facilitated by analysing a weak electron emission below the nominal work function energy. The emission in the low energy cut-off region appears correlated with band gap emission found in UPS spectra and is attributed to localised electron emission through Ti(3+)(3d) states.     

Development of formamidinium lead iodide-based perovskite solar cells: efficiency and stability

Perovskite materials have been particularly eye-catching by virtue of their excellent properties such as high light absorption coefficient, long carrier lifetime, low exciton binding energy and ambipolar transmission (perovskites have the characteristics of transporting both electrons and holes). Limited by the wider band gap (1.55 eV), worse thermal stability and more defect states, the first widely used methylammonium lead iodide has been gradually replaced by formamidinium lead iodide (FAPbI₃) with a narrower band gap of 1.48 eV and better thermal stability. However, FAPbI₃ is stabilized as the yellow non-perovskite active phase at low temperatures, and the required black phase (α-FAPbI₃) can only be obtained at high temperatures. In this perspective, we summarize the current efforts to stabilize α-FAPbI₃, and propose that pure α-FAPbI₃ is an ideal material for single-junction cells, and a triple-layer mesoporous architecture could help to stabilize pure α-FAPbI₃. Furthermore, reducing the band gap and using tandem solar cells may ulteriorly approach the Shockley–Queisser limit efficiency. We also make a prospect that the enhancement of industrial applications as well as the lifetime of devices may help achieve commercialization of PSCs in the future.

This perspective is focused on the current development state and the future development direction of FA-based perovskite materials and solar cells.     

Optoelectronic properties analysis of Ti-substituted GaP

A study using first principles of the electronic and optical properties of materials derived from a GaP host semiconductor where one Ti atom is substituted for one of the eight P atoms is presented. This material has a metallic intermediate band sandwiched between the valence and conduction bands of the host semiconductor for 0 < or = U < or = 8 eV where U is the Hubbard parameter. The potential of these materials is that when they are used as an absorber of photons in solar cells, the efficiency is increased significantly with respect to that of the host semiconductor. The results show that the main contribution to the intermediate band is the Ti atom and that this material can absorb photons of lower energy than that of the host semiconductor. The efficiency is increased with respect to that of the host semiconductor mainly because of the absorption from the intermediate to conduction band. As U increases, the contribution of the Ti-d orbitals to the intermediate band varies, increasing the d(z2) character at the bottom of the intermediate band.     

Visible light photo-oxidation of model pollutants using CaCu3Ti4O12: an experimental and theoretical study of optical properties, electronic structure, and selectivity

Charge transfer between metal ions occupying distinct crystallographic sublattices in an ordered material is a strategy to confer visible light absorption on complex oxides to generate potentially catalytically active electron and hole charge carriers. CaCu3Ti4O12 has distinct octahedral Ti4+ and square planar Cu2+ sites and is thus a candidate material for this approach. The sol?gel synthesis of high surface area CaCu3Ti4O12 and investigation of its optical absorption and photocatalytic reactivity with model pollutants are reported. Two gaps of 2.21 and 1.39 eV are observed in the visible region. These absorptions are explained by LSDA+U electronic structure calculations, including electron correlation on the Cu sites, as arising from transitions from a Cu-hybridized O 2p-derived valence band to localized empty states on Cu (attributed to the isolation of CuO4 units within the structure of CaCu3Ti4O12) and to a Ti-based conduction band. The resulting charge carriers produce selective visible light photodegradation of 4-chlorophenol (monitored by mass spectrometry) by Pt-loaded CaCu3Ti4O12 which is attributed to the chemical nature of the photogenerated charge carriers and has a quantum yield comparable with commercial visible light photocatalysts.