Er3+-doped germanate glasses for active waveguides prepared by Ag+/K+ ↔ Na+ ion-exchange

Planar waveguides were prepared by Ag⁺/K⁺ ? Na⁺ ion-exchange on Er⁺³-doped GeO₂–ZnO–Na₂O–Li₂O glasses obtained by a melting–casting method. Optical parameters of the waveguides were measured at 543.5, 632.8, and 1550 nm by m-line technique as a function of the Ag⁺ ion-exchange time. The optimized planar waveguides show an effective diffusion depth (d) of 2.95 μm and well confined propagating TE₀ and TM₀ modes at 1550 nm. Spectroscopic properties as photoluminescence emission and emission decay time were evaluated for the erbium-doped planar waveguide, indicating that Ag⁺ ? Na⁺ ion-exchange enhance the photoluminescence emissions in the green and infrared regions from erbium ions. The glass system studied is promising to be applied as optical amplifiers in the C-telecom band. Green emission sensitized by Ag⁺ was also observed.     

ZnO growth on Si with low-temperature ZnO buffer layers by ECR-assisted MBE

High-quality ZnO films were grown on Si(1 0 0) substrates with low-temperature (LT) ZnO buffer layers by an electron cyclotron resonance (ECR)-assisted molecular-beam epitaxy (MBE). In order to investigate the optimized buffer layer temperature, ZnO buffer layers of about 1.1 μm were grown at different growth temperatures of 350, 450 and 550 °C, followed by identical high-temperature (HT) ZnO films with the thickness of 0.7 μm at 550 °C. A ZnO buffer layer with a growth temperature of 450 °C (450 °C-buffer sample) was found to greatly enhance the crystalline quality of the top ZnO film compared to others. The root mean square (RMS) roughness (3.3 nm) of its surface is the smallest, compared to the 350 °C-buffer sample (6.7 nm), the 550 °C-buffer sample (7.4 nm), and the sample without a buffer layer (6.8 nm). X-ray diffraction (XRD), photoluminescence (PL) and Raman scattering measurements were carried out on these samples at room temperature (RT) in order to characterize the crystalline quality of ZnO films. The preferential c-axis orientations of (0 0 2) ZnO were observed in the XRD spectra. The full-width at half-maximum (FWHM) value of the 450 °C-buffer sample was the narrowest as 0.209°, which indicated that the ZnO film with a buffer layer grown at this temperature was better for the subsequent ZnO growth at elevated temperature of 550 °C. Consistent with these results, the 450 °C-buffer sample exhibits the highest intensity and the smallest FWHM (130 meV) of the ultraviolet (UV) emission at 375 nm in the PL spectrum. The ZnO characteristic peak at 438.6 cm⁻¹ was found in Raman scattering spectra for all films with buffers, which is corresponding to the E₂ mode.     

Plasma enhanced chemical vapor deposition of ZnO thin films

Zinc oxide thin films were deposited on silicon and corning-7059 glass substrates by plasma enhanced chemical vapor deposition at different substrate temperatures ranging from 36 to 400 °C and with different gas flow rates. Diethylzinc as the source precursor, H₂O as oxidizer and argon as carrier gas were used for the preparation of ZnO films. Structural and optical properties of these films were investigated using X-ray diffraction, reflection high energy electron diffraction, atomic force microscopy and photoluminescence. Highly oriented films with (0 0 2) preferred planes were obtained on silicon kept at 300 °C with 50 ml/min flow rate of diethylzinc without any post annealing. Reflection high energy electron diffraction pattern also showed the crystalline nature of these films. A textured surface with rms roughness ∼28 nm was observed by atomic force microscopy for the films deposited at 300 °C. A sharp peak at 380 nm in the PL spectra indicated the UV band-edge emission.     

Characteristics of ITO films fabricated on glass substrates by high intensity pulsed ion beam method

Transparent conductive oxides such as indium tin oxide (ITO) are interesting materials due to their wide-band gaps, high visible light transmittance, high infrared reflectance, high electrical conductivity, hardness and chemical inertness. ITO films were fabricated on soda lime glass substrates by using high-intensity pulsed ion beam (HIPIB) technique. The as-deposited films comprised of partially crystallized In₂O₃ and after annealing at 500 °C for 1 h the film changed to polycrystalline phase. After annealing carrier concentration and Hall mobility increased while specific resistance and sheet resistance decreased quickly; and this trend was also observed when film thickness increased up to 300 nm for the post-annealed samples. Further increase in thickness of the film changed the electrical properties slightly. Atomic force microscopy (AFM) revealed that roughness decreased after 500 °C annealing for 1 h in air, except for the film of 65 nm thick. The thickness of the film which relates to the carrier concentration and mobility, degree of crystallization, size of the grain, and connections among grains in film are main factors to determine film’s electrical properties.     

Growth of pure ZnO thin films prepared by chemical spray pyrolysis on silicon

Structural, morphological, optical and electrical properties of ZnO thin films prepared by chemical spray pyrolysis from zinc acetate (Zn(CH₃COO)₂ 2H₂O) aqueous solutions, on polished Si(1 0 0), and fused silica substrates for optical characterization, have been studied in terms of deposition time and substrate temperature. The growth of the films present three regimes depending on the substrate temperature, with increasing, constant and decreasing growth rates at lower, middle, and higher-temperature ranges, respectively. Growth rate higher than 15 nm min⁻¹ can be achieved at T_s=543 K. ZnO film morphological and electrical properties have been related to these growth regimes. The films have been characterized by X-ray diffraction, scanning electron microscopy and X-ray photoelectron spectroscopy.     

Characterization of pure ZnO thin films prepared by a direct photochemical method

In this paper, amorphous ZnO thin films were obtained by direct UV irradiation of β-diketonate Zn(II) precursor complexes spin-coated on Si(1 0 0) and fused silica substrates. ZnO films were characterized by means of XPS, X-ray diffraction (XRD) and Atomic Force Microscopy (AFM). These analyses revealed that as-deposited films are amorphous and have a rougher surface than thermally treated films. Optical characterization of the films showed that these are highly transparent in the visible spectrum with an average transmittance of up to 95% over 400 nm, and an optical band-gap energy of 3.21 eV for an as-deposited film, and 3.27 eV for a film annealed at 800 °C. Low resistivity values were obtained for the ZnO films (1.0 × 10⁻² Ω cm) as determined by Van der Pauw four-point probe method.     

Intense luminescence of amorphous Eu2O3 prepared by aqueous sol–gel method

Amorphous Eu₂O₃ was prepared by an aqueous sol–gel method. Emission due to the ⁵D₀ → ⁷F_J (J = 0, 1, 2) transitions of Eu³⁺ ions were observed. The dominant transition was the ⁵D₀ → ⁷F₂ red emission of Eu³⁺. The properties of the as-prepared samples were different with changes in the annealing temperature. To investigate the luminescence properties of the amorphous Eu₂O₃, the temperature-dependent photoluminescence (PL) spectra of samples annealed at 600 °C were measured in the temperature range 77–300 K. PL peak positions were unchanged with the change of temperature.     

Luminescence properties and energy transfer of Eu/Tb ions codoped aluminoborosilicate glasses

Eu/Tb codoped aluminoborosilicate glasses were fabricated by high temperature melting-quenched technique and their luminescence properties were investigated by excitation and emission spectra. Under 376 nm excitation, blue, green and red emission bands were simultaneously observed at 425 nm, 485 nm, 540 nm and 611 nm, respectively. The broad blue emission band centered at 425 nm was originated from the reduced Eu²⁺ ions, which were reduced from Eu³⁺ ions at high temperature in an ambient atmosphere and the reduction process may be related with the optical basicity of glass matrix. A complex bright white light emission was obtained for 0.5 mol% Eu₂O₃, 0.5 mol% Tb₂O₃ codoped aluminoborosilicate glass with CIE-X = 0.31 and CIE-Y = 0.33. The energy transfer among Eu³⁺, Eu²⁺ and Tb³⁺ ions was also discussed.     

Synthesis,characterization and photoluminescence of ZnO spindles by polyvinylpyrrolidone-assisted low-temperature wet-chemistry process

ZnO spindles were prepared by wet-chemistry process with surfactant polyvinylpyrrolidone at a low temperature of 35 °C. The morphologies and structures of the products were characterized by X-ray powder diffraction, field emission scanning electron microscopy, and high-resolution transmission electron microscopy. The addition of polyvinylpyrrolidone promoted the formation of ZnO crystal nuclei, and accelerated the growth rate of (0001) plane rich in Zn²⁺ ions. The as-obtained ZnO spindles were twin crystal wurtzite structures, with the size of 30 nm at the tips, 350–450 nm at the center, and 1–1.5 μm in length. The room-temperature photoluminescence results showed that surface effects played a major role in the luminescence of the ZnO spindles, which exhibited a broad violet–blue–green emission band related to deep level defects. We proposed a new growth mechanism, which might be useful for applications in synthesis of size- and shape-controlled ZnO crystals.     

Dopant concentration dependence of structure,optical, and magnetic properties of ZnO:Fe thin films

The effects of Fe-dopant concentration on the structure, optical, and magnetic properties of ZnO thin films were investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), optical transmittance, absorption, photoluminescence (PL), and magnetic measurements. XRD spectra indicated that the doping of Fe atoms could not only change the lattice constant of ZnO but also improve the crystalline quality of ZnO thin films. And the Zn (0 0 2) diffraction peak at round 36.34°(2θ) was detected with increasing Fe content for the substitution of the Zn in the ZnO film. The band gap edge shifted toward longer wavelength with increase in Fe doping. Moreover, near band edge emission gradually increased with increase in Fe content (up to about 0.82 wt%), and then abruptly decreased due to the concentration quenching effect. Magnetic measurements confirmed that the ferromagnetic behavior of Fe-doped ZnO was correlated with the dopant concentration.     

Role of oxygen in structural properties of annealed CuAlO2 films

CuAlO₂ films were sputtered on quartz substrates at different oxygen partial pressures (OPP) and carried out the annealing at 900 °C for 5 h in N₂ ambient. The structural properties of these films have been studied in detail by X-ray diffraction, Raman spectroscopy, and atomic force microscopy. Annealed CuAlO₂ films are grown along the (0 0 1) preferential orientation. The film deposited at 20% OPP demonstrates the excellent crystalline behavior and the smallest electrical resistivity (41.8 Ω cm). At higher OPP, the crystalline behavior begins to degenerate up to the amorphous state at 60% OPP, and some micro-caves presented in the film surface become larger and deeper with the increase in OPP. We believe that the negative thermal expansion behavior associated with excess oxygen atoms is the primary responsibility for the change in structural properties.     

Effect of annealing temperature on the optical and electrical properties of aluminum doped ZnO films

Aluminum doped ZnO thin films were successfully deposited on the silicon substrates by spin coating method. The effects of an annealing temperature on electrical and optical properties were investigated for 1.5 at.% of aluminum. Refractive index profile has been obtained for the film annealed at 350 °C using ellipsometry and it has shown minimum refractive index of 1.95 and maximum value of 2.1. Thickness profile shows quite good uniformity of the film having minimum thickness value of 30.1 nm and maximum value of 34.5 nm. Maximum conductivity value obtained was 4.63 Ω^?1-cm^?1 for the film annealed at 350 °C. Maximum carrier density of 2.20 × 10¹⁷ cm^?3 was deduced from the Hall measurement and Fourier transform infrared spectroscopy clearly reveals major peak at 407 cm^?1 in the spectra associated with the ZnO bond.     

Sol–gel derived highly transparent and conducting yttrium doped ZnO films

This paper reports the structural, electrical and optical properties of Yttrium doped zinc oxide (YZO) thin films deposited on Corning (7059) glass substrates by spin coating technique. A precursor solution of ZnO, 0.2 M in concentration was prepared from zinc acetate dissolved in anhydrous ethanol with diethanolamine as a sol gel stabilizer. Yttrium nitrate hexahydrate (Y₂NO₃ · 6H₂O) was used as the dopant (3 wt%) in the present study. The films of different thickness in the range (200–500 nm) were prepared. The films were annealed in air at 450 °C for 1 h. It was observed that the c-axis orientation improves and the grain size increases as is indicated by an increase in intensity of the (0 0 2) peak and the decrease in the FWHM with the increase of film thickness. The resistivity decreased sharply from 2.8 × 10⁻² to 5.8 × 10⁻³ Ω-cm as the thickness increased from 200 to 500 nm. However, the average transmittance decreased from 87% to 82.6% as the film thickness increased to 500 nm. The lowest sheet resistance of ∼120 Ω/□ was obtained for the 500 nm thick film.     

Synthesis and photoluminescence of Eu3+-doped ZnO–Ga2O3–SiO2 nano-glass-ceramics

Transparent rare-earth Eu³⁺-doped ZnO–Ga₂O₃–SiO₂ nano-glass-ceramics were obtained by a sol–gel method. X-ray diffraction and transmission electron microscopy were used to characterize the as-synthesized materials. Results showed that ZnGa₂O₄ nanocrystals with the size of 5 nm were precipitated from ZnO–Ga₂O₃–SiO₂ system and dispersed in the SiO₂-based glass when the heat-treatment temperature was up to 800 °C. Photoluminescence characterization of Eu³⁺-doped ZnO–Ga₂O₃–SiO₂ nano-glass-ceramics was carried out and the results show that the as-synthesized material display intense emission at 615 nm belonging to ⁵D₀ → ⁷F₂ transition.     

Multicomponent phosphate invert glasses with improved processing

Owing to their structure of small phosphate units, phosphate invert glasses have high crystallisation tendencies, which make processing of the melt challenging. The aim was to improve their processing by (1) increasing the number of glass components and (2) incorporating intermediate oxides (TiO₂, MgO and ZnO). Glasses (P₂O₅–CaO–MgO–Na₂O) were produced by a melt-quench route. In series 1, TiO₂ was partially substituted for Na₂O, and the number of components was increased by partially substituting strontium for calcium, zinc for magnesium and potassium for sodium on a molar base. In series 2, the MgO + ZnO content in the multicomponent glass was varied between 0 and 20 mol% in exchange for CaO + SrO. Differential scanning calorimetry showed a significant increase of the processing window in the multicomponent glasses, explained by an increased energy barrier for crystallisation owing to increased entropy of mixing. The MgO + ZnO content also significantly improved the processing window from 117 K (0 mol% MgO + ZnO) to 185 K (20 mol%), owing to their large field strength. These results show that the processing of phosphate invert glasses for biomedical applications can be improved significantly by incorporating ions such as strontium or zinc which are also known to have therapeutic effects.     

Fabrication and characterization of transparent conductive ZnO:Al thin films prepared by direct current magnetron sputtering with highly conductive ZnO(ZnAl2O4) ceramic target

Using a highly conductive ZnO(ZnAl₂O₄) ceramic target, c-axis-oriented transparent conductive ZnO:Al₂O₃ (ZAO) thin films were prepared on glass sheet substrates by direct current planar magnetron sputtering. The structural, electrical and optical properties of the films (deposited at different temperatures and annealed at 400°C in vacuum) were characterized with several techniques. The experimental results show that the electrical resistivity of films deposited at 320°C is 2.67×10⁻⁴ Ω cm and can be further reduced to as low as 1.5×10⁻⁴ Ω cm by annealing at 400°C for 2 h in a vacuum pressure of 10⁻⁵ Torr. ZAO thin films deposited at room temperature have flaky crystallites with an average grain size of ∼100 nm; however those deposited at 320°C have tetrahedron grains with an average grain size of ∼150 nm. By increasing the deposition temperature or the post-deposition vacuum annealing, the carrier concentration of ZAO thin films increases, and the absorption edge in the transmission spectra shifts toward the shorter wavelength side (blue shift).     

Visible up-conversion photoluminescence from IR diode-pumped SiO2–TiO2 nano-composite films heavily doped with Er3+–Yb3+ and Nd3+–Yb3+

Efficient infrared-to-visible conversion is reported in thin film nano-composites, with composition 90% SiO₂–10% TiO₂, fabricated by a spin-coating sol–gel route and co-doped with Er³⁺ Yb³⁺ and with Nd³⁺:Yb³⁺ ions. The conversion process is observed under 808 nm laser diode excitation and results in the generation of green (526 and 550 nm) and red (650 nm) emissions: from the former, and blue (478 nm) and green (513 and 580 nm) emissions from the latter. The main mechanism that allows for up-conversion is ascribed to energy transfer among Er³⁺ and Yb³⁺ ions in their excited states. Up-conversion efficiency for red emission predominates in samples doped with Er³⁺:Yb³. The results illustrate the large potential of this class of materials for photonic applications in optoelectronics devices.     

Emission enhancement of Eu(III) and/or Tb(III) ions entrapped in silica xerogels with ZnO nanoparticles by energy transfer

Luminescent materials consisting of Eu(III) and/or Tb(III) ions and quantum dots of the ZnO semiconductor were immobilized in oxide xerogels by the impregnation method. The material’s excitation spectra showed the characteristic absorption bands of lanthanide(III) ions and sharp bands at low wavelengths attributed to excitons in the semiconductor nanoparticles. The luminescence emission of Ln(III) ions (Ln = Tb and/or Eu) showed very low intensity when typical excitation wavelengths for both ions were used (λ_exc = 394 for Eu(III), 350 nm for Tb(III)). In three-component materials (ZnO quantum dots and Ln(III) ions in oxide xerogels) only the Tb(III) emission could be improved by using an excitation wavelength corresponding to the position of one of the exciton absorption bands. The energy transfer enhancing the Eu(III) emission was possible in the four-component system (ZnO quantum dots plus Tb(III) and Eu(III) incorporated into the oxide matrix). The best results of the Eu(III) emission intensity were obtained when the silica xerogel served as the matrix of the four-component material thermally treated at 80 °C.     

Alteration of the optical properties of poly 9,9′-dioctylfluorene by TiO2 nanocrystalline

A poly 9,9′-dioctylfluorene (PFO)/TiO₂ composite was successfully prepared by adsorbing the polymer on the surface of a TiO₂ nanocrystalline film. The photoluminescence (PL) spectrum of the obtained nanocomposite film showed 28 nm of red-shift, compared to that of the bulk polymer film. The maximum of the PL emission peaks of the pure bulk polymer occurred at 442 nm, while the maximal emission for the nanocomposite film appeared at 470 nm. The interaction between the conjugated polymer chains and the nanopores of the TiO₂ film played a key role in the resulting red-shift.     

Effect of the ytterbium concentration on the upconversion luminescence of Yb3+/Er3+ co-doped PbO–GeO2–Ga2O3 glasses

The effect of Yb³⁺ concentration on the frequency upconversion (UPC) of Er³⁺ in PbO–GeO₂–Ga₂O₃ glasses is reported for the first time. Samples were prepared with 0.5 wt% of Er₂O₃ and different concentrations of Yb₂O₃ (1.0–5.0 wt%). The green (523 and 545 nm) and red (657 nm) emissions are observed under 980 nm diode laser excitation. The dependence of the frequency UPC emission intensity upon the excitation power was examined and the UPC mechanisms are discussed. An interesting characteristic of these glasses is the increase of the ratio of red to green emission, through an increase of the Yb³⁺ concentration due to an efficient energy transfer from Yb³⁺ to Er³⁺.