Studies on zirconium nitride films deposited by reactive magnetron sputtering

This paper deals with the preparation of Zirconium Nitride films by DC reactive magnetron sputtering. Films were deposited on silicon substrates at room temperature. Nitrogen partial pressure was varied from 4 × 10⁻⁵ to 10 × 10⁻⁵ m bar and the effect on the structural, electrical, optical properties of the films was systematically studied. The films formed at a nitrogen pressure of 6 × 10⁻⁵ mbar showed low electrical resistivity of 1.726 × 10⁻³ Ω.cm. The deposited films were found to be crystalline with refractive index and extinction coefficient 1.95 and 0.4352 respectively. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Influence of hydrogen on structural and optical properties of low temperature polycrystalline Ge films deposited by RF magnetron sputtering

To improve the properties of polycrystalline Ge thin films, which are a candidate material for the bottom cells of low cost monolithic tandem solar cells, ∼300 nm in situ hydrogenated Ge (Ge:H) thin films were deposited on silicon nitride coated glass by radio-frequency magnetron sputtering. The films were sputtered in a mixture of 15 sccm argon and 10 sccm hydrogen at a variety of low substrate temperatures (T_s)≤450 °C. Structural and optical properties of the Ge:H thin films were measured and compared to those of non-hydrogenated Ge thin films deduced in our previous work. Raman and X-ray diffraction spectra revealed a structural evolution from amorphous to crystalline phase with increase in T_s. It is found that the introduction of hydrogen gas benefits the structural properties of the polycrystalline Ge film, sputtered at 450 °C, although the onset crystallization temperature is ∼90 °C higher than in those sputtered without hydrogen. Compared with non-hydrogenated Ge thin films, hydrogen incorporated in the films leads to broadened band gaps of the films sputtered at different T_s.     

Optical properties of Al‐doped ZnO thin films deposited by two different sputtering methods

Aluminum‐doped zinc oxide (AZO) thin films were deposited on sapphire (002) and glass substrates by two different sputtering techniques radio frequency magnetron cosputtering of AZO and ZnO targets and sputtering of an AZO target. The dependence of the photoluminescence (PL) and transmittance properties of the AZO films deposited by cosputtering and sputtering on the AZO/ZnO target power ratio, R and the O₂/Ar flow ratio, r were investigated, respectively. Only a deep level emission peak appears in the PL spectra of cosputtered AZO films whereas both UV emission and deep level emission peaks are observed in the PL spectra of sputtered AZO films. The absorption edges in the transmittance spectra of the AZO films shift to the lower wavelength region as R and r increase. Also effects of crystallinity, surface roughness, PL on the transmittance of the AZO films were explained using the X‐ray diffraction (XRD), atomic force microscopy (AFM), and PL analysis results. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Copper nitride (Cu3N) thin films deposited by RF magnetron sputtering

The copper nitride thin films were prepared on glass substrate by RF magnetron sputtering method. At pure nitrogen atmosphere, the nitrogen flow rate affects the copper nitride thin films’ structures. Only a little part of nitrogen atoms insert into the body center of Cu₃N structure and parts of nitrogen atoms insert into Cu₃N crystallites boundary at higher nitrogen flow rate. But the indirect optical energy gap, E_opg, decreases with increasing nitrogen flow rate. The typical value of E_opg is 1.57 eV. In a nitrogen and argon mixture atmosphere, when the nitrogen partial was less than 0.2 Pa at 50 sccm total flow rate, the (1 1 1) peak of copper nitride appears. Thermal decomposition temperature of Cu₃N thin films deposited in pure nitrogen and 30 sccm flow rate was less than 300 °C. The surface morphology was smooth.     

Optical band gap of zinc nitride films prepared by reactive rf magnetron sputtering

Polycrystalline Zn₃N₂ films are prepared on Si and quartz glass substrates by RF magnetron sputtering at room temperature. The structural and optical properties are studied by X‐ray diffraction and double beam spectrophotometer, respectively. X‐ray diffraction indicates that the Zn₃N₂ films deposited on Si and quartz glass substrates both have a preferred orientation in (321) and (442), also are cubic in structure with the lattice constant a=0.9847 and 0.9783 nm, respectively. The absorption coefficients as well as the film thickness are calculated from the transmission spectra, and their dependence on photon energy is examined to determine the optical band gap. Zn₃N₂ is determined to be an indirect‐gap semiconductor with the band gap of 2.11(2) eV. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

The effect of oxygen partial pressure on physical properties of nano‐crystalline silver oxide thin films deposited by RF magnetron sputtering

Nano‐crystalline silver oxide films were deposited on glass and silicon substrates held at room temperature by RF magnetron sputtering of silver target under different oxygen partial pressures. The influence of oxygen partial pressure on the structural, morphological, electrical and optical properties of deposited films was investigated. Varying oxygen partial pressure during the sputter deposition leads to changes of mixed phase of Ag₂O and Ag to a single phase of Ag₂O and to AgO. The X‐ray diffraction and X‐ray photoelectron spectroscopy results showed the formation of single phase Ag₂O with cubic structure at oxygen partial pressures of 2x10^‐2 Pa while the films deposited at higher oxygen partial pressure of 9x10^‐2 Pa showed the formation of single phase of AgO with monoclinic structure. Raman spectroscopic studies on the single phase Ag₂O showed the stretching vibration of Ag‐O bonds. Single‐phase Ag₂O films obtained at oxygen partial pressure of 2x10^‐2 Pa were nano‐crystalline with crystallite size of 20 nm and possessed an electrical resistivity of 5.2x10^‐3 Ωcm and optical band gap of 2.05 eV. The films deposited at higher oxygen partial pressure of 9x10^‐2 Pa were of AgO with electrical resistivity of 1.8x10^‐2 Ωcm and optical band gap of 2.13 eV. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structural and optoelectrical properties of Ga‐doped ZnO semiconductor thin films grown by magnetron sputtering

Transparent conductive gallium‐doped zinc oxide (Ga‐doped ZnO) films were prepared on glass substrate by magnetron sputtering. The influence of substrate temperature on structural, optoelectrical and surface properties of the films were investigated by X‐ray diffraction (XRD), X‐ray photoelectron spectroscopy (XPS), spectrophotometer, four‐point probe and goniometry, respectively. Experimental results show that all the films are found to be oriented along the c‐axis. The grain size and optical transmittance of the films increase with increasing substrate temperature. The average transmittance in the visible wavelength range is above 83% for all the samples. It is observed that the optoelectrical property is correlated with the film structure. The Ga‐doped ZnO film grown at the substrate temperature of 400 °C has the highest figure of merit of 1.25 × 10⁻² Ω⁻¹, the lowest resistivity of 1.56 × 10⁻³ Ω·cm and the highest surface energy of 32.3 mJ/m².     

Characterization of hydrogenated amorphous silicon thin films prepared by magnetron sputtering

Magnetron sputtered hydrogenated amorphous silicon (a-Si:H) thin films have been characterized. Hydrogen (H₂) with argon (Ar) was introduced into the sputtering chamber to create the plasma. A sudden increase in the deposition rate occurred when the hydrogen was added. The maximum hydrogen content of 16 atomic percent (at.%) was achieved and a bandgap of about 2.07 eV was determined from the spectral investigations of the hydrogenated films. The effect of radio frequency (RF) power on the deposition rate, as well as on the hydrogen content was investigated. To change the hydrogen content in the films, the hydrogen flow rate was varied while keeping the argon flow rate constant. The hydrogen content in the films increased with increasing hydrogen flow rate up to the maximum content of 16 at.% and then decreased for further increases in hydrogen flow.     

Optical and kinetic properties of cathodically deposited amorphous tungsten oxide films

Optical properties and the coloration–decoloration kinetics of electrochromic films of amorphous tungsten oxide (a-WO₃), produced by cathodic deposition from a sodium tungstate based aqueous peroxide electrolyte, have been investigated. As films color in 1 N H₂SO₄, sequential appearance of bands with maxima at ∼1 eV, 1.6 eV, 2 eV, and 2.4 eV is observed in their optical absorption and electrosorption spectra, is the same as in the case of reduction of nanosized hydrated-WO₃ colloids with a gradual decrease in their size to that of 12-tungsten polyanions with Keggin structure, indicating the presence of such polytungstates in cathodically deposited a-WO₃, too. When polytungstate is reduced by one electron, an absorption band with a maximum at ∼1.6 eV appears in the optical spectrum of the film. This band corresponds to the optical excitation of charge transfer of the W⁵⁺ → W⁶⁺ type between two adjacent tungsten atoms. The reduction of polytungstate by a second electron with potential shift towards more negative values is accompanied by the appearance of an analogous band with a maximum at ∼2 eV. The reduction of such polytungstates involves participation of the bulk of injected electrons, indicating their dominate role in the nanostructure of the films investigated. The effective co-diffusion coefficient of electrons and protons in cathodically deposited a-WO₃ exhibits a potential dependence with a maximum at 0.1 V against a silver-chloride electrode, where its value is ∼10⁻⁸ cm²/s. It has been shown that the decrease in this coefficient at potential values of over 0.1 V is caused by a decrease in electron mobility.     

Properties of Sm‐doped CaNb2O6 thin films deposited by radio‐frequency magnetron sputtering

Sm‐doped CaNb₂O₆ (CaNb₂O₆:Sm) phosphor thin films were prepared by radio‐frequency magnetron sputtering on sapphire substrates. The thin films were grown at several growth temperatures and subsequently annealed at 800 °C in air. The crystallinity, surface morphology, optical transmittance, and photoluminescence of the thin films were investigated by X‐ray diffraction, scanning electron microscopy, ultraviolet‐visible spectrophotometry, and fluorescence spectrophotometry, respectively. All of the thin films showed a main red emission radiated by the transition from the ⁴G_5/2 excited state to the ⁶H_9/2 ground state of the Sm³⁺ ions and several weak bands under ultraviolet excitation with a 279 nm wavelength. The optimum growth temperature for depositing the high‐quality CaNb₂O₆:Sm thin films, which was determined from the luminescence intensity, was found to be 400 °C, where the thin film exhibited an orthorhombic structure with a thickness of 370 nm, an average grain size of 220 nm, a band gap energy of 3.99 eV, and an average optical transmittance of 85.9%. These results indicate that the growth temperature plays an important role in controlling the emission intensity and optical band gap energy of CaNb₂O₆:Sm thin films.     

Structural and optical properties of single-crystal ZnMgO thin films grown on sapphire and ZnO substrates by RF magnetron sputtering

High-quality ZnMgO films were grown by the radio frequency (RF) magnetron sputtering technique in pure oxygen ambient. Single-crystal films were obtained, when the Mg concentration was Zn_0.87Mg_0.13O or lower in the case of ZnMgO/Al₂O₃ and when it was Zn_0.65Mg_0.35O or lower in the case of ZnMgO/ZnO. Polycrystalline films were obtained when the growth temperature was lower than 500 °C, regardless of the Mg concentration. Position of the photoluminescence (PL) ultraviolet (UV) peak of the ZnMgO film shifted with the addition of Mg, from 3.33 eV (ZnO) to 3.51 eV (Zn_0.87Mg_0.13O) and 3.70 eV (Zn_0.65Mg_0.35O). It was also observed that growth of the ZnMgO films at higher temperature resulted in higher band-gap energy. It was proposed that this phenomenon is because concentration of the substitutional Mg atoms occupying Zn site is increased as the growth temperature increases.     

Properties of Si-rich SiO2 films by RF magnetron sputtering

Si-rich silicon oxide (SiO_x, 1<x<2) films were prepared by RF magnetron reactive sputtering or co-sputtering on the Si(1 1 1) substrates. X-ray diffraction patterns showed that the peak of silicon nanocrystals (NCs), separated from SiO_x films, had (1 1 1) preferred orientation. The results of scanning electron microscopy indicated the Si NCs uniting into clusters. We demonstrated that the photoluminescence (PL) peaks at 650 nm was caused by defect center. In particular, we discussed the correlation between the PL and the structure of SiO_x films. The mean size of the Si NCs was estimated to be about 3 nm by the PL peak position.     

Characteristics of sputtered amorphous carbon films prepared by a closed-field unbalanced magnetron sputtering method

We discuss the tribological performance of sputtered amorphous carbon (a-C) films deposited by closed-field unbalanced magnetron (CFUBM) sputtering with a graphite target using a mixture of helium (He) and argon (Ar) as sputtering gases. We investigated the effects of the graphite target power density on the micro-structural and physical properties. In the Raman spectra, the G-peak position moved to the higher wavenumbers. The I_D/I_G ratio increased with the increase of target power density in the fixed DC bias voltage. This was the result of the structural change in the a-C film that resulted with the increase in sp² bonding fraction. Also, the maximum hardness of the a-C film was 23 GPa, the friction coefficient was 0.1, and the critical load was 25.9 N on the Si wafer. In addition, the compressive residual stress of the film increased a little with increasing target power density. Consequently, the various properties of a-C films, with an increase of the target power density, were associated with the increase of cross-linked sp² bonding fraction and the cluster size. The tribological properties of a-C film showed clear dependence on the energy of ion bombardment with the increase of plasma density during film growth.     

Optical and electrical properties of lithium doped nickel oxide films deposited by spray pyrolysis onto alumina substrates

Non-doped and lithium doped nickel oxide crystalline films have been prepared onto quartz and crystalline alumina substrates at high substrate temperature (600 °C) by the pneumatic spray pyrolysis process using nickel and lithium acetates as source materials. The structure of all the deposited films was the crystalline cubic phase related to NiO, although this crystalline structure was a little bit stressed for the films with higher lithium concentration. The grain size had values between 60 and 70 nm, almost independently of doping concentration. The non-doped and lithium doped films have an energy band gap of the order of 3.6 eV. Hot point probe results show that all deposited films have a p-type semiconductor behavior. From current–voltage measurements it was observed that the electrical resistivity decreases as the lithium concentration increases, indicating that the doping action of lithium is carried out. The electrical resistivity changed from 10⁶ Ω cm for the non-doped films up to 10² Ω cm for the films prepared with the highest doping concentration.     

Comparison of tin‐doped indium oxide films fabricated by spray pyrolysis and magnetron sputtering

A comparison of the properties between Tin‐doped Indium Oxide (ITO) films fabricated by sputtering and spray pyrolysis is presented. This analysis shows that the ITO films fabricated by DC magnetron sputtering in pure argon gas requires of a subsequent annealing for the improvement of their structural, electrical and optical properties, when they are compared to films fabricated by single‐stage spray pyrolysis process that includes a new approach. The optimum annealing temperature for ITO films sputtered at room temperature lies in the 300‐350 °C range. Under such conditions, the ITO sputtered films are slightly more resistive than the resistivity (2 × 10^‐4 Ω‐cm) shown by films sprayed at 480 °C using a solution with a 5 % of tin to indium ratio, and almost four times the worst value of the combination of transparency and conductivity determined by the value of the figure of merit (FOM). The sprayed films have a high value of the FOM, 2.9×10^‐2 Ω^‐1, which is comparable with the best published results.     

Low-temperature growth of nanocrystalline silicon films prepared by RF magnetron sputtering: Structural and optical studies

In order to contribute to the understanding of the optoelectronics properties of hydrogenated nanocrystalline silicon films, a detailed study has been conducted. Structural analysis (infrared absorption and Raman scattering spectroscopy), combined with optical measurements spectroscopy (optical transmission, photothermal deflection spectroscopy and photoconductivity) were used to characterize the films. The samples were elaborated by radio-frequency magnetron sputtering of crystalline silicon target, under a hydrogen (70%) and Argon (30%) gas mixture, at three different total pressures (2, 3 and 4 Pa) and varying substrate temperature (100, 150 and 200 °C). The results clearly indicate that the films deposited at 2 Pa are amorphous, while for 3 and 4 Pa nanocrystalline structures are observed. These results are discussed in the framework of the existing models.     

High rate epitaxial growth of ZnO films on sapphire by planar magnetron rf sputtering system

Single crystal films of (11$\text{2}$0)ZnO are obtained on (01$\text{1}$2) sapphire at a deposition rate of 2 μm/h at a substrate temperature of 210–260°C by using a planar magnetron type high rate and low substrate temperature rf sputtering system. The surface of the film is so smooth that it can be used as an optical waveguide without post-deposition treatment. However, the films so far obtained have considerably higher optical waveguide loss than that of chemically vapor deposited films on the same face of sapphire.     

Deep ultraviolet emission of ZnO films prepared by RF magnetron sputtering at changing substrate temperature

ZnO films with deep ultraviolet emission on (0 0 0 6) sapphire substrates were prepared by RF magnetron sputtering at periodically changing substrate temperature. It is found that the as-prepared ZnO films consist of the obvious multilayered structures from the SEM images of their cross-sections. Room temperature photoluminescence of ZnO films with multilayered structure shows two emissions centered at 332 and 388 nm with 260 nm excited wavelength. The strong deep ultraviolet emission at 332 nm is due to the O 2p dangling-bond state in the multilayered structure of ZnO films. Raman scattering spectrum of sample shows that such structured ZnO film possesses strong compressive stress.     

Influence of precursor concentration on structural,morphological and electrical properties of spray deposited ZnO thin films

Nanostructured ZnO thin films were coated on glass substrate by spray pyrolysis using Zinc acetate dihydrate as precursor. Effect of precursor concentration on structural, morphological, optical and electrical properties of the films was investigated. The crystal structure and orientation of the ZnO thin films prepared with four different precursor solution concentrations were studied and it was observed that, the prepared films are polycrystalline in nature with hexagonal wurzite structure. The peaks are indexed to (100), (002), (101), (102) and (110) planes. Grain size and texture coefficient (TC) were calculated and the grain size found to increase with an increase in precursor concentration. Presence of Zn and O elements was confirmed with EDAX spectra. Optical absorption measurements were carried out in the wavelength region of 380 to 800 nm and the band gap decreases as precursor concentration increases. The current‐voltage characteristics were observed at room temperature and in dark. It was found that for the films deposited at four different precursor concentrations, the conductivity improves as precursor concentration increases. As trimethyl amine TMA is a good marker for food quality discrimination, sensing behavior of the films at an optimized operating temperature of 373 K, towards various concentrations of (TMA) was observed and reported. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Preparation and characterization of SrTiO3/BaTiO3 thin multilayer films deposited on Pt/Ti/SiO2/Si substrate by radio frequency magnetron sputtering

SrTiO₃/BaTiO₃ thin films with multilayer structure were deposited on Pt/Ti/SiO₂/Si substrates by a double target radio frequency (RF) magnetron sputtering at 500 °C. The structure and properties of the SrTiO₃/BaTiO₃ thin multilayers have been evaluated by X-ray diffraction (XRD), Auger electron spectrometry (AES), scanning electron microscopy (SEM), scanning transmission electron microscopy (STEM), electron diffraction (ED) and polarization-electric field hysteresis loop. The XRD result reveals that the SrTiO₃/BaTiO₃ thin multilayers with the designed modulation have been accomplished. The lattice strain increases with layer number. According to AES analysis and morphology observation, a discrete interlayer exists at a position between the interface of Pt electrode and SrTiO₃. The remanent polarization (P_r) and coercive field (E_c) of SrTiO₃/BaTiO₃ thin multilayer are 3.0 μC/cm² and 20.0 kV/cm, respectively. In comparison with BaTiO₃, the device containing dual layers of SrTiO₃/BaTiO₃ possesses higher E_c but lower P_r.