EXAFS investigation on the structural environment of Tm3+ in Ge–Ga–S–CsBr glasses

The local structures around Tm³⁺ in Ge_0.25Ga_0.10S_0.65 and 0.90 (Ge_0.25Ga_0.10S_0.65) − 0.10CsBr glasses were investigated using Extended X-ray absorption fine structure (EXAFS) spectroscopy. In Ge_0.25Ga_0.10S_0.65 glass, Tm³⁺ ions are surrounded by approximately seven S ions. Addition of 10 mol% CsBr resulted in significant changes in the EXAFS spectrum of Tm³⁺ ions due to the changes in the local structure surrounding Tm³⁺ ions. The first-nearest coordination shell around Tm³⁺ ion is predominantly composed of about six Br ions in 0.90 (Ge_0.25Ga_0.10S_0.65) − 0.10CsBr glass.     

Emission properties and local structure of Tm3+ in Ge–Ga–S–Br glass

Spectroscopic properties of Tm³⁺ in (1 − x) (Ge_0.25Ga_0.10S_0.65)–xBr (or CsBr) glasses (x = 0.0 and 0.1) were investigated. Emission properties of Tm³⁺ in 0.9(Ge_0.25Ga_0.10S_0.65)–0.1Br glass were similar to those in Ge_0.25Ga_0.10S_0.65 glass, while there was significant improvement when doped into 0.9(Ge_0.25Ga_0.10S_0.65)–0.1CsBr glass. The lifetime of the Tm³⁺:³H₄ level increased from 0.23 to 1.22 msec with 10 mol% CsBr addition. The presence of Cs⁺ facilitated the formation of [GaS_3/2Br]⁻ units by donating an electron to the Ga tetrahedron, resulting in the homogeneous distribution of Br. In this way, Tm³⁺ ions have their local environment made of Br only. When Br ions were added instead of CsBr, [GaS_(4−x)/2Br]⁻ units with x > 1 were formed and Tm³⁺ ions were surrounded by both S and Br, producing a high phonon environment.     

Emission and local structure of rare-earth ions in chalcogenide glasses

Local structures of rare-earth ions in Ge–Ga–S–CsBr glasses were investigated to understand the structural origin on the emission property enhancement. The frequency of the phonon vibration controlling the multiphonon relaxation was changed to 245 cm⁻¹ due to the formation of Ga–Br bonds with CsBr addition to sulfide glasses. Formation of this new chemical bond was also confirmed from the phonon side band spectra of Eu³⁺ ions. Analyses of the EXASF spectra proved that Tm³⁺ ions were surrounded by approximately seven S ions in Ge_0.25Ga_0.10S_0.65 glass but were coordinated by ∼6 Br ions in the glass with 10 mol% of CsBr.     

Optical spectroscopy and local structure of Er3+ luminescence centres in СaO–Ga2O3–GeO2 glasses

Optical absorption, luminescence excitation and emission spectra of Er³⁺ centres in Ca₃Ga₂Ge₃O₁₂:Er glass with Er content of 1.46 wt% are presented and analysed. Luminescence kinetics for the main Er³⁺ transitions was satisfactorily described by single exponential decays with characteristic lifetimes. Oscillator strengths, phenomenological Judd–Ofelt intensity parameters, radiative decay rates (emission probabilities of transitions), branching ratios and radiative lifetimes for Er³⁺ centres in Ca₃Ga₂Ge₃O₁₂:Er glass are calculated and compared with the corresponding parameters of the Ca₃Sc₂Ge₃O₁₂:Er³⁺ garnet and other crystals and glasses. Quantum efficiency, η, of the ⁴I_13/2 → ⁴I_15/2 Er³⁺ transition is determined. Incorporation peculiarities and local structure of Er³⁺ luminescence centres in Ca₃Ga₂Ge₃O₁₂:Er³⁺ glass are discussed in comparison with garnet crystals and oxide glasses. On the basis of the presented results and referenced EXAFS data for Er, Eu and Ho impurities (L₃-edge) it has been shown that Er³⁺ centres in Ca₃Ga₂Ge₃O₁₂ glass occupy network sites with the coordination number to oxygen of N = 6.     

Ge and Ga K-edge EXAFS analyses on the structure of Ge-Ga-S-CsBr glasses

The local structure of Ge and Ga ions in (1 − x)(Ge_0.25Ga_0.10S_0.65)-xCsBr glasses (x = 0.00, 0.05, 0.10 and 0.12) were investigated using extended X-ray absorption fine structure (EXAFS) spectroscopy. CsBr formed [GaS_3/2Br]⁻ structural units in glass while Ge ions remained in GeS_4/2 tetrahedra, unaffected by CsBr addition. Rare-earth ions can be surrounded by Br ions only when CsBr/Ga ratio in glass became larger than unity.     

Effect of the substitution of S for Se on the structure and non-linear optical properties of the glasses in the system Ge0.18Ga0.05Sb0.07S0.70−xSex

Glasses in the system Ge–Ga–Sb–S/Se have been elaborated with different S/Se ratios in order to increase the non-linear optical properties of these glasses. We report results of a systematic study examining the relationship of the physical properties to the structure of the glasses in the system Ge_0.18Ga_0.05Sb_0.07S_0.70−xSe_x with x = 0, 0.02, 0.05, 0.10, 0.20, 0.30 and 0.40 where the replacement of S by Se has been made. The non-linear refractive index has been measured using the Z-scan technique, with picosecond pulses emitted by a 10 Hz Q-switched mode-locked Nd-Yag laser at 1064 nm under conditions suitable to characterize ultrafast non-linearities. The decrease of the glass transition temperature, the increase of the non-linear refractive index and of the density with the progressive replacement of S by Se have been correlated along with the red shift of the absorption band gap, to associated structural reorganization. A corresponding progressive decrease of corner-sharing GeS_4/2 and the formation of mostly two edge-sharing Ge₂S₄S_2/2, S₃Ge–S–GeS₃ as well as mixed GeS_4−xSe_x units have been identified by Raman spectroscopy.     

Enhanced mid-IR luminescence of Tm3+ ions in Ga2S3 nanocrystals embedded chalcohalide glass ceramics

Chalcohalide glass with a composition of 65GeS₂–25Ga₂S₃–10CsI (in mol%) doped with 0.6 wt% Tm³⁺ ions was prepared by conventional melt–quench method. By heat treating the precursor glass at 20 °C above its glass transition temperature T_g for different durations, IR transparent glass ceramics were obtained. X-ray diffraction (XRD) and scanning electron microscope (SEM) showed that Ga₂S₃ crystallites were precipitated after heat treatment and their grain sizes were in nano-scale and increased with the elongation of heat treated time. Mid-IR luminescence properties of the glass and transparent glass ceramic samples were investigated. The emissions at 2.3 and 3.8 μm corresponding to optical transitions of ³H₄ → ³H₅ and ³H₅ → ³F₄ of Tm³⁺ ions were significantly enhanced by the presence of Ga₂S₃ nanocrystals and reached a maximum after 8 hours treatment.     

Low-temperature Er3+ emission in Ge–S–Ga glasses excited by host absorption

The photoluminescence (PL) of a series of (GeS₂)₈₀(Ga₂S₃)₂₀ glasses doped with different amounts of Er (0.17, 0.35, 0.52, 1.05 and 1.39 at.%) at 77 and 4.2 K has been studied. The influence of the temperature on the emission cross-section of the PL bands at ∼1540, 980 and 820 nm under host excitation has been defined. A quenching effect of the host photoluminescence has been established from the compositional dependence of the PL intensity. It has been found that the present Er³⁺-doped Ge–S–Ga glasses posses PL lifetime values about 3.25 ms.     

Laser spectroscopy of Nd3+-doped PbO–Bi2O3–Ga2O3–BaO glasses

We present spectroscopic results of PbO–Bi₂O₃–Ga₂O₃–BaO glass doped with different concentration of Nd₂O₃. These glasses have high refractive index (∼2.4) and large spectral transmission window. Measurements of absorption, emission and fluorescence lifetime are presented. From the calculations of the Judd–Ofelt parameters the radiative lifetimes, branching ratios and quantum efficiency of ⁴F_3/2 level are calculated. The highest emission intensity was measured for the sample doped with 0.5 wt% of Nd₂O₃ with emission cross-section of 2.6 × 10⁻²⁰ cm², at 1069 nm, fluorescence lifetime of 110 μs, quantum efficiency of 82% and effective linewidth of 34 nm. The results point out this glass system as good candidate to be used in the development of photonic devices operating in the near infrared spectral range.     

Interface of GaN grown on Ge(1 1 1) by plasma assisted molecular beam epitaxy

Early efforts to grow GaN layers on germanium substrates by plasma assisted molecular beam epitaxy led to GaN domains, rotated by 8° relative to each other. Increased insight in the growth of GaN on germanium resulted in the suppression of these domain and consequently high quality layers. In this study the interface of these improved layers is investigated with transmission electron microscopy. The GaN layers show high crystal quality and an atomically abrupt interface with the Ge substrate. A thin, single crystalline Ge₃N₄ layer is observed in between the GaN layer and Ge substrate. This Ge₃N₄ layer remains present even at growth temperatures (850 °C) far above the decomposition temperature of Ge₃N₄ in vacuum (600 °C). Triangular voids in the Ge substrate are observed after growth. Reducing the Ga flux at the onset of GaN growth helps to reduce the triangular defect size. This indicates that the formation of voids in the Ge substrate strongly depends on the presence of Ga atoms at the onset of growth. However complete elimination was not achieved. The formation of voids in the germanium substrate leads to diffusion of Ge into the GaN layer. Therefore we examined the diffusion of Ge atoms into the GaN layer and Ga atoms into the Ge substrate. It was found that the diffusion of Ge into the GaN layer and Ga into the Ge substrate can be influenced by the growth temperature but cannot be completely suppressed. Our results suggest that Ga atoms diffuse through small imperfections in the Ge₃N₄ interlayer and locally etch the Ge substrate, leading to the diffusion of Ga and Ge atoms.     

Chemical characteristics of Dy–S bonds in Ge–As–S glass

From Dy L₃-edge extended X-ray absorption fine structure spectroscopic analysis of Dy-doped Ge–As–S glass, we verified that both the coordination number and Dy–S distance are decreased in this representative chalcogenide glass compared to those in the Dy₂S₃ crystalline counterpart. The strong covalent nature inherent in chemical bonds between the constituent atoms of Ge–As–S glass would be responsible for the enhanced covalency of the Dy–S bonds, which would then be sensitively related to the optical characteristics of the 4f ↔ 4f transitions of Dy³⁺ as well as the low rare-earth solubility exhibited by the Ge–As–S glass.     

Investigations of the non-isothermal crystallization of Bi4Ge3O12 (2:3) glasses

Amorphous Bi₄Ge₃O₁₂ glass samples were produced by melt quenching procedure stating with Bi₄Ge₃O₁₂ (BGO) powder, obtained by solid state reaction between oxides. The kinetics of non-isothermal crystallization of BGO nano-crystals has been investigated. Differential Thermal Analysis (DTA) can give the main parameters of crystallization with an exothermic peak from 813 K to 851 K depending on the heating rate, which was assigned to the crystallization of cubic BGO in the amorphous matrix and compared with the X-Ray Diffraction (XRD) patterns. The nano-crystal dimensions were calculated from the XRD patterns by using the Debye–Scherrer method and were compared with Transmission Electron Microscopy (TEM) images. It was shown that the Ozawa model is most suitable for describing the behavior of non-isothermal crystallization of BGO nano-crystals within the glass matrix. Experimental results suggest a disk-shape type growth mechanism for the Bi₄Ge₃O₁₂ nano-crystallites. The Flynn–Wall–Ozawa method has shown that the average activated energy value is 385 ± 14 kJ/mol which was computed within the same model and agrees very well with the activation energy of the crystallization.     

Growth and scintillation properties of Pr doped Gd3(Ga,Al)5O12 single crystals

Pr:Gd₃(Ga,Al)₅O₁₂ single crystals were grown by the micro-pulling down (μ-PD) method. All grown crystals were greenish and transparent with 3.0 mm in diameter, 15–30 mm in length. Neither visible inclusions nor cracks were observed. Luminescence and scintillation properties were measured. The substitution at the Al³⁺ sites by Ga³⁺ in garnet structure has been studied. In these crystals, Pr³⁺ 5d–4f emission is observed with 340 nm wavelength. Pr1%:Gd₃Ga₃Al₂O₁₂ shows highest emission intensity. The light yield of Pr:Gd₃Ga₃Al₂O₁₂ sample with 3 mmφ×1 mm size was around 4500 photon/MeV. Scintillation decay time was 7.9 ns (0.5%), 46 ns (0.7%) and 214 ns (98.8%).     

Glass composition dependence of luminescence due to Ge2+ center in germanate glasses

Germanate glasses were prepared by the melt-quenching method using an assembled hot-thermocoupler equipped in a sample chamber of a fluorescence spectrometer, and subsequently their luminescence and excitation spectra were measured. In the GeO₂ glass, luminescence bands due to the Ge²⁺ center appeared at the central wavelengths of 300 and 395 nm, their excitation bands being at 250 and 330 nm, respectively. In the (100 − x)GeO₂ − xM_mO_n glasses, for M_mO_n = B₂O₃ (x ≦ 50), SiO₂ (x ≦ 40), and Al₂O₃ (x ≦ 2), the luminescence intensity and therefore the amount of the Ge²⁺ center increased with increasing the content of M_mO_n, where M^(2n/m)+ ions (B³⁺, Si⁴⁺, and Al³⁺) have lower basicities than a Ge⁴⁺ ion. Contrarily, for M_mO_n = Li₂O (x ≦ 30), Na₂O (x ≦ 20), K₂O (x ≦ 20), CaO (x ≦ 20), SrO (x ≦ 3), BaO (x ≦ 15), ZnO (x ≦ 20), Ga₂O₃ (x ≦ 10), Sb₂O₃ (x ≦ 20), Bi₂O₃ (15 ≦ x ≦ 25), TiO₂ (x ≦ 3), and Nb₂O₅ (x ≦ 10), the luminescence intensity and the amount of the Ge²⁺ center rapidly decreased with increasing the amount of additives and disappeared, where M^(2n/m)+ ions (Li⁺, Na⁺, K⁺, Ca²⁺, Sr²⁺, Ba²⁺, Zn²⁺, Ga³⁺, Sb³⁺, Bi³⁺, Ti⁴⁺, and Nb⁵⁺) have higher basicities than a Ge⁴⁺ ion.     

Compositional dependences on the mechanism of upconversion in Nd3+/Tm3+ co-doped chalcohalide glasses

Mechanisms of the compositional dependence of blue emission from Nd³⁺/Tm³⁺ co-doped Ge–Ga–S–CsBr chalcohalide glasses were investigated. The blue upconversion emissions (centered at 475 nm) due to the Tm³⁺: ¹G₄ → ³H₆ transition decreased as the CsBr/Ga ratio in glasses while the other upconversion emissions from the Nd³⁺ ions increased. Changes in the local environment of rare-earth ions incurred by the CsBr addition significantly increased the excited state absorption within Nd³⁺ ions. This resulted in the decrease in the Nd³⁺ → Tm³⁺ energy transfer rates that led to the large decrease in blue upconversion emission.     

Cluster self-organization of TR,Ge-containing crystal-forming systems: Suprapolyhedral precursors and self-assembly of La3Ga[6]Ga 4 [4] Ge[4]O14 (langasite) and La3Ge[6]Ge 2 [5] Ge 2 [4] Ga[4]O16 gallogermanates

A combinatorial-topological analysis of the La₃Ga^[6]Ga ₄ ^[4] Ge^[4]O₁₄ and La₃Ge^[6]Ge ₂ ^[5] Ge ₂ ^[4] Ga^[4]O₁₆ gallogermanates, which have MT and MPT microporous frameworks composed of M octahedra (GeO₆, GaO₆), T tetrahedra (GeO₄, GaO₄), and P pyramids (GeO₅), is performed using the method of coordination sequences with the TOPOS 3.2 program package. It is established that the La₃Ga^[6]Ga ₄ ^[4] Ge^[4]O₁₄ gallogermanate is characterized by a crystal-forming net 6 6 6 (of the graphite type). A new type of the binodal net 6 10 1 0 + 6 10 (2: 1) is revealed in the La₃Ge^[6]Ge ₂ ^[5] Ge ₂ ^[4] Ga^[4]O₁₆ gallogermanate. The cyclic cluster precursors composed of six polyhedra with a lanthanum template atom at the center of the LaMT ₅ and LaMP ₃ T ₃ clusters are identified by the two-color decomposition of the nets in the structures of the La₃Ga^[6]Ga ₄ ^[4] Ge^[4]O₁₄ and La₃Ge^[6]Ge ₂ ^[5] Ge ₂ ^[4] Ga^[4]O₁₆ gallogermanates. The coordination numbers of the cluster precursors in these structures are found to be equal to 6 and 4 for two-dimensional nets and 8 and 6 for three-dimensional nets, respectively.     

X-ray diffraction measurements for liquid Ge–Si alloys using synchrotron radiation

Energy dispersive X-ray diffraction measurements have been carried out for liquid Ge_1−xSi_x alloys (x = 0.0, 0.3, 0.5, 1.0) using synchrotron radiation at SPring-8. We measured the X-ray diffraction spectra of liquid Ge and Si up to a high temperature range, (liquid Ge from 1270 to1870 K and liquid Si from 1680 to 2020 K), liquid Ge_0.7Si_0.3 at 1620 K, and liquid Ge_0.5Si_0.5 at 1540, 1590, 1670 and 1720 K. The total structure factors of the liquid Ge–Si alloys have a characteristic shoulder on the high-wave-vector side of the first peak. We deduced a pair distribution function from the Fourier transform of the observed structure factor, which was weakly dependent on the temperature. The nearest-neighbor coordination number of liquid Ge–Si alloys is close to that of pure liquid Ge and Si. The first peak of the pair distribution function moved to a shorter distance with increasing Si concentration. These results may indicate that the atomic radii of the Si and Ge atoms in the pure liquid are preserved in the liquid alloys.     

Compositional effects on fluorescence lifetime of Dy3+ ions embedded in chalcogenide Ge–As–S glasses containing very small amount of Ga and CsBr

We have investigated the fluorescence lifetimes of Dy³⁺: 1.3 μm emission in the chalcogenide Ge–As–S glasses with different compositions but identically containing 0.5 mol% Ga and 0.5 mol% CsBr. The measured lifetimes turn out to be sensitive not only to the concentrations of Ga and CsBr but also to compositional variations in the Ge–As–S host glasses. The lifetime is enhanced conspicuously in glass of the S-sufficient compositions, relative to the stoichiometric GeS₂–As₂S₃ composition, while this effect is not significant in the S-exact and S-deficient compositions. We employ Ga K-edge EXAFS analysis to support that the local structural environments of Ga in the modified chalcogenide glasses are closely correlated with the lifetime enhancement effect.     

Micro-structural studies of GeSe2–Ga2Se3–MX (MX = CsI and PbI2) glasses using Raman spectra

Microstructure of the chalcohalide glasses: GeSe₂–Ga₂Se₃–CsI and GeSe₂–Ga₂Se₃–PbI₂ ternary system were investigated by Raman spectra, lifetime of Dy³⁺ infrared emission and glass transition temperature (T_g). The evolution of the Raman spectra shows that the fundamental structural groups of these studied glasses consist of [Ge(Ga)Se₄] tetrahedral and some complex structure units [Ge(Ga)I_xSe_4?x](x = 1–4). The x value varied when the different iodide was added in Ge–Ga–Se matrix. For GeSe₂–Ga₂Se₃–CsI glasses, the [Ge(Ga)I_xSe_4?x](x = 1–4) mixed-anion tetrahedral and [Ga₂I₇]^? units occurred. For GeSe₂–Ga₂Se₃–PbI₂ glasses, the [Ge(Ga)I₂Se₂], [Ge(Ga)I₃Se] units can be formed. The changes of Dy³⁺ infrared emission lifetime and T_g support the results. Additionally, [PbI_n] structural units will be formed in GeSe₂–Ga₂Se₃–PbI₂ glasses due to high form-ability of these units when the PbI₂ content is high.     

Spectroscopy studies of pure and chromium-doped calcium gallogermanate crystals, Ca3Ga2Ge4O14

Absorption spectra, the spectra of circular dichroism and magnetic circular dichroism of pure and Cr-doped Ca₃Ga₂Ge₄O₁₄ crystals have been studied. The crystal-field parameters and the transition frequencies of Cr³⁺ ions are calculated. The location of Cr³⁺ and Cr⁴⁺ ions in oxygen octahedra and tetrahedra is confirmed. The spectra of circular dichroism show the maxima due to Cr³⁺ ions and growth-induced defects.