Coefficients of stationary ArF laser pulse absorption in fused silica (type III)

Weak stationary bulk absorption coefficients α^stat(Φ, f) in fused silica are measured directly in dependence on the ArF laser fluence Φ and repetition rate f by the laser induced deflection technique (LID). The absorption is quantified using a modified Beer’s law. The investigated samples show non-linear increases α^stat(Φ, f = const.) for 3 ⩽ Φ ⩽ 25 mJ cm⁻² pulse⁻¹ and α^stat(Φ = const., f) for 50 ⩽ f ⩽ 400 Hz. The experimental data are fitted by a rate equation model consisting of an equilibrium between E′ center generation and annealing. Generation occurs photolytically from SiH and strained SiO bonds via 1- and 2-photon absorption, respectively. Annealing is due to the reaction with atomic hydrogen and other reaction channels, e.g. ODC generation.     

ac conductivity in a-Ge–Se–Bi glasses

In the present paper the effect of Bi impurity (low ∼4 at.% and high ∼10 at.%) on the ac conductivity (σ_ac) of a-Ge₂₀Se₈₀ glassy alloy is studied and the experimentally deduced values are fitted with theoretically deduced values by using correlated barrier hopping model (CBH). Frequency dependent ac conductance of the samples over a frequency range of 100–50 kHz has been taken in the temperature range (268–360 K). At frequency 2 kHz and temperature 298 K, the value of ac conductivity (σ_ac) decreases at low concentration of Bi (4 at.%). However, the value of σ_ac increases at higher concentration of Bi (10 at.%). The ac conductivity is proportional to ω^s for undoped and doped samples. The value of frequency exponent (s) decreases as the temperature increases. These results have been explained on the basis of some structural changes at low and high concentration of Bi impurity.     

Magnetic properties and low frequency magnetoimpedance of novel amorphous CoFeTaBCr ribbons

In this report, we study the effect of Cr addition on the dc an ac magnetic properties of novel melt spun amorphous Co_43−x/2Fe_20−x/2Cr_xB_31.5Ta_5.5 (x = 0, 1, 2, 4) alloy series. The saturation magnetization decreases with increasing Cr content as well as the ac relative initial permeability, which showed a high relaxation frequency of 3 MHz. In addition, the magnetoimpedance effect was detected in this alloy series, with a maximum variation ratio of 3% at x = 0.     

Magnetic properties of liquid 3d transition metal–Si alloys

The magnetic susceptibility has been measured for liquid transition metal–Si alloys (TM_1−cSi_c, TM = Ni, Co, Fe, Mn) as a function of temperature. The magnetic susceptibilities of liquid Ni_1−cSi_c with c ⩾ 0.3, liquid Co_1−cSi_c with c ⩾ 0.4 and liquid Fe_1−cSi_c with c ⩾ 0.6 were found to be almost independent of temperature, which suggests that the Ni, Co and Fe ions on the Si side are in the non-magnetic state. Liquid Ni_1−cSi_c with c ⩽ 0.2, liquid Co_1−cSi_c with c ⩽ 0.3 and liquid Fe_1−cSi_c with c ⩽ 0.5 show the Curie–Weiss behavior with a reasonable value of effective Bohr magnetic number. Liquid Mn_1−cSi_c with c ⩽ 0.2 and c ⩾ 0.6 were found to be in their non-magnetic state. However, the Curie–Weiss behavior was observed for liquid Mn_1−cSi_c with c = 0.3, 0.4 and 0.5. The magnetic susceptibility of their liquid alloys in the non-magnetic state has been studied by using Anderson model. The density of 3d states at the Fermi level can be estimated from the data of magnetic susceptibility.     

Strontium environment transition in tin silicate glasses by neutron and X-ray diffraction

The effect of Sr modifier atoms on the structure of stannosilicate glasses of composition (Sr0)_x(SnO)_0.5−x(SiO₂)_0.5, with 0 ⩽ x ⩽ 0.15, has been studied using Mössbauer spectroscopy and neutron and X-ray diffraction. The tin is mostly in the Sn²⁺ state. The Sr–O bond length undergoes a step decrease from (2.640 ± 0.005) Å to (2.585 ± 0.005) Å as x increases from 0.10 to 0.15, indicating a decrease in co-ordination number from 8 to 7. A Sn–Sn distance of 3.507 ± 0.005 Å is revealed by a first-order difference calculation from the x = 0 sample. This is too short to be consistent with significant edge sharing of [SnO₃] trigonal pyramids.     

Effect of proton irradiation on electrical properties of a-As2S3

This paper reports the effect of proton irradiation on the electrical properties of a-As₂S₃ in the temperature range of 323–418 K and frequency range 0.1–100 kHz. The variation of transport property is studied with proton irradiation dose (1 × 10¹³ ions/cm² and 1 × 10¹⁵ ions/cm²). It has been observed that proton irradiation changes the dc conductivity (σ_dc), dc activation energy (ΔE_dc) and ac conductivity (σ_ac(ω)). The σ_dc and σ_ac(ω) increases with dose of proton irradiation. The value of frequency exponent (s) decreases with the temperature and irradiation dose. These results are explained in terms of change in density of defect states in these glasses.     

Conductivity percolation transition of Agx(Ge0.25Se0.75)100−x glasses

The ionic conductivity of several chalcogenide glasses increases abruptly with mobile ion addition from values typical of insulating materials (10⁻¹⁶–10⁻¹⁴ Ω⁻¹ cm⁻¹) to values of fast ionic conductors (10⁻⁷–10⁻¹ Ω⁻¹ cm⁻¹). This change is produced in a limited concentration range pointing to a percolation process. In a previous work [M. Kawasaki, J. Kawamura, Y. Nakamura, M. Aniya, Solid State Ionics 123 (1999) 259] the transition from semiconductor to fast ionic conductor of Ag_x(Ge_0.25Se_0.75)_100−x glasses was detected at x¹ ≅ 10 at.% in the form of a steep change in the conductivity. Ag_x(Ge_0.25Se_0.75)_100−x glasses with x ⩽ 25 at.%, prepared by a melt quenching method, are investigated by impedance spectroscopy in the frequency range 5 Hz–2 MHz at different temperatures, T, from room temperature to 363 K and by DC measurements at room temperature. The conductivity of the glasses, σ, was obtained as a function of silver concentration and temperature. For x ⩾ 10 at.% our results are in agreement with those reported by Kawasaki et al. [M. Kawasaki, J. Kawamura, Y. Nakamura, M. Aniya, Solid State Ionics 123 (1999) 259]. The percolation transition was observed in the range 7 ⩽ x ⩽ 8. The temperature dependence of the ionic conductivity follows an Arrhenius type equation σ = (σ_o/T) · exp(−E_σ/kT). The activation energy of the ionic conductivity, E_σ, and the pre-exponential term, σ_o, are calculated. The results are discussed in connection with other chalcogenide and chalcohalide systems and linked with the glass structures.     

EPR and magnetic susceptibility studies of B2O3–Bi2O3–Gd2O3 glasses

Glasses of the xGd₂O₃ · (100 − x)[B₂O₃ · Bi₂O₃] system with 0.5 ⩽ x ⩽ 10 mol% were studied by electron paramagnetic resonance (EPR) and magnetic susceptibility measurements. Data obtained show that for low gadolinium oxide contents of the samples (x ⩽ 3 mol%) the Gd³⁺ ions are randomly distributed in the host glass matrix and are present as isolated and dipole–dipole coupled species. For higher gadolinium oxide contents of the samples (x > 3 mol%) the Gd³⁺ ions appear as both isolated and antiferromagnetically coupled species. The EPR spectra of the glasses reveal resonance sites with an unexpected high crystalline field in addition to the ‘U’ spectrum, typical for Gd³⁺ ions in disordered systems. This absorption line is due to Gd³⁺ ions that replace Bi³⁺ ions from the host glass matrix and could play the network unconventional former role in the studied glasses.     

Properties and structure of (50 − x)BaO–xZnO–50P2O5 glasses

The thermal, mechanical, chemical properties and the structure of (50 − x)BaO–xZnO–50P₂O₅ (0 ⩽ x ⩽ 50 mol%) glasses were investigated. For these glasses, the density (ρ), glass transition temperature (T_g), dissolution rate (DR), ³¹P magic angle spinning nuclear magnetic resonance (MAS-NMR) spectra and Fourier-transformed infrared (FTIR) spectra were determined. As BaO was replaced by ZnO, all the properties were similarly decreased in density, Young’s modulus, T_g and water resistance. FTIR analyses revealed a shortening of phosphate chains by the shift of (P–O–P)_as band to a higher wave number owing to the substitution ZnO of BaO. The NMR spectra showed that the replacement of BaO by ZnO decreased the concentration of Q²-tetrahedral sites and increased that of Q¹-tetrahedral sites.     

ArF laser induced pulse absorption in fused silica (type III): Modeling the fluence and repetition rate dependence

At 193 nm, weak stationary bulk absorption coefficients α^stat in standard and experimental grade fused silica (type III) are measured in dependence on the laser fluence H and repetition rate f. The samples show non-linear increases α^stat(H) for 0.2 ? H ? 5 mJ cm^?2 pulse^?1 (f = const.) and α^stat(f) for 100 ? f ? 1000 Hz (H = const.). An absorption model, focussing on ArF laser induced E′ center generation and annealing, and the associated rate equations are applied to simulate the experimental data quantitatively. From the simulations, material parameters like the 2-photon absorption (TPA) coefficient, the E′ center absorption cross section σ_E′ and the hydrogen related E′ annealing rate are calculated. TPA coefficients values of 9.7 · 10^?9 cm/W (standard grade material) and 1.4 · 10^?8 cm/W (experimental grade material), E′ center cross sections of 4.5 · 10^?18 and 3.6 · 10^?18 cm² and hydrogen annealing rates of 1.5 s^?1 (standard grade) and 3.4 s^?1 (experimental grade) are found.     

Optical properties of erbium-doped fluorochlorozirconate glasses

We report the optical properties of a fluorochlorozirconate (FCZ) glass with the composition 53% ZrF₄, 20% NaF, 3.5% AlF₃, 3% LaF₃, 0.5% InF₃, (20 ? x)% BaCl₂, x% BaF₂ with x varying from 0% to 2%, and doped with various amounts of trivalent erbium by the addition of ErCl₃. Annealing of the as-prepared glass in inert (N₂) or reducing (5%H₂ + 95%Ar) atmospheres at temperatures that ensure the conversion of the glass into a glass-ceramic by the nucleation of BaCl₂ nanocrystals, does not significantly change any of Er³⁺ related absorption and photoluminescence (PL) characteristics. We have carried out a Judd–Ofelt analysis of the absorption spectra and obtained Ω₂ = (1.92 ± 0.3) × 10^? 20 cm², Ω₄ = (0.88 ± 0.16) × 10^? 20 cm² and Ω₆ = (0.59 ± 0.08) × 10^? 20 cm², and also the radiative lifetimes of the ⁴I_13/2→⁴I_15/2, ⁴I_11/2→⁴I_15/2 and ⁴S_3/2→⁴I_15/2 bands. The radiative lifetime from the Judd–Ofelt analysis for the ⁴I_13/2→⁴I_15/2 band is in good agreement with the experimentally measured PL decay time. The examination of the optical properties of powdered samples with different average particle size does not show any photon trapping effects. We have determined the spectral absorption and emission cross-sections and then estimated the possible spectral optical gain for varying degrees of relative populations of the ⁴I_13/2 and ⁴I_15/2 manifolds.     

Aging of oriented polymer glasses

Dimensional (D) and enthalpy relaxation (ΔH) of oriented polymer glasses (PS and PC) have been studied as function of temperature, between T_g and T_g−20 °C, and aging time t, ranging to several weeks. The dimensional relaxation (shrinkage) and enthalpy relaxation curves verify the logarithm law D(t) ∼ H(t) ∼ log t, between an incubation τ_i and a final relaxation time τ_f. The time τ_f to reach the equilibrium (D and ΔH) follows the Vogel–Tamann–Fulcher (VFT) law. Enthalpy relaxation and shrinkage exhibit important differences. Enthalpy relaxation of oriented and isotropic polymers follows the same logarithm law, independent of the draw ratio λ and the mode of deformation, the relaxation time τ_f coincides with the relaxation time of the α segmental motions. Shrinkage depends on λ and the mode of deformation, the relaxation time τ_f is attributed to the normal mode, the relaxation time of the whole chain. Finally the shrinkages of PS and PC show some differences. PC at short aging times presents another type of dimensional relaxation which would be due to the β motions. This would be in close connection with the ductile (PC) and fragile (PS) behavior of these two polymers far below T_g.     

Relaxation of polaronic charge carriers in lithium manganese spinels

Lithium manganese spinels Li_1+xMn_2−xO₄, 0 ⩽ x ⩽ 0.33, were prepared by wet chemistry technique followed by heat-treatment at 750 °C or 800 °C. Differential scanning calorimetry was used to reveal phase transitions. Electrical properties were studied by impedance spectroscopy. LiMn₂O₄ exhibited phase transition below room temperature. The transition, seen as an exothermic event in DSC and a steep decrease of conductivity upon cooling, was sharp in sample sintered at 800 °C and broadened over a range of temperature in sample sintered at 750 °C. In the low temperature phase of LiMn₂O₄, two relaxations of similar strength were observed in the frequency dependent permittivity. The low frequency process was identified as relaxation of charge carriers since the relaxation frequency followed the same temperature dependence as the dc conductivity. The high frequency process exhibited milder temperature dependence and was attributed to dipolar relaxation in the charge-ordered structure. The dipolar relaxation was barely visible in Li substituted samples, x ⩾ 0.05, which did not undergo structural phases transition. Measurements extended to liquid nitrogen temperature showed gradual lowering of the activation energy of conductivity and relaxation frequencies, behavior typical for phonon-assisted hopping of small polarons.     

Dielectric relaxation of Al/Lu2O3/Al thin film structures from 10 μHz to 10 MHz

Results of dielectric studies of lutetium sesquioxide layers examined in Al/Lu₂O₃/Al thin film sandwiches are reported. The dielectric measurements were carried out in the frequency range 10⁻⁵–10⁷ Hz and for temperatures from 292 K to 500 K. Results are presented as plots of frequency functions: the capacitance, the dielectric loss factor, tan δ(f) and also on the complex plane as Cole–Cole plots and Nyquist plots. The influence of the external voltage on C(U) and tan δ(U) was examined. Experimental data were analyzed taking into account thin insulating Lu₂O₃ film, near-electrode regions of Al/Lu₂O₃ and Lu₂O₃/Al interfaces and series resistance of electrodes and leads. The parameters of Lu₂O₃ film, near-electrode regions and resistance of contacts and leads were determined.     

Spin disorder in Fe-doped manganites

Ln_0.7M_0.3MnO₃ compounds are well-known ferromagnets mediated by a double exchange mechanism. As Mn atoms are substituted by Fe in the ratio Mn_1−xFe_x the magnetic structure dramatically changes, because the ferromagnetic double exchange chain is broken. At low Fe concentrations all compounds are magnetically ordered. For intermediate values ferro (FM), antiferro (AF) and paramagnetic (PM) phases co-exist in a large temperature range, and at x ≈ 0.2 spin or cluster-glass behavior is found. Magnetization, Mössbauer, polarized and low angle neutron scattering as well as muon spin relaxation experiments have been performed on 0 ⩽ x ⩽ 0.30 compounds showing the transit from long range ferromagnetism to spin glass. Co-existence of FM and AF clusters of different size has been found for all doped compounds.     

Effect of vacuum annealing on charge transport and trapping in a-Si1 − xCx:H/c-Si heterostructures

The processes of charge transport and trapping in amorphous Si_1 ? xC_x:H films deposited on crystalline p-type Si wafers and annealed in vacuum in the temperature range 300–650 °C have been evaluated. Current–voltage (I–V), capacitance–voltage (C–V) and admittance–temperature (G–T) characteristics were measured in the temperature range 100–350 K. The spectrum of thermal effusion of hydrogen was measured from room temperature up to 1000 °C.C–V characteristics indicate a slight increase of the dielectric constant k and a large hysteresis after annealing at 450 °C. The hysteresis is believed to be associated with mobile hydrogen effusion from the a-SiC:H film, and it is not seen after a 650 °C anneal. From I–V data the maximum rectification ratio is observed after annealing at 450 °C. Variable-range hopping (VRH) conduction at the Fermi level is found to dominate the forward current of the as-deposited structure. After annealing at 450 °C the forward current can be described by space-charge limited (SCL) mechanisms with trapping at shallow levels with energy of about 0.12 eV. After annealing at 650 °C the process of VRH conduction appears again, but the density of hopping sites is much higher than in the as-grown sample. From admittance spectra, the energy position of respective traps in a-SiC:H is at (E_V + 0.45) eV for as-deposited material and it decreases slightly after vacuum annealing. On the basis of these results, an energy band diagram of the a-Si_1 ? xC_x:H/p-Si structure annealed at 450 °C is proposed.     

Glasses in the SbPO4–WO3 system

Glasses in the binary system (100 − x)SbPO₄–xWO₃ (20 ⩽ x ⩽ 60, x in mol%) have been prepared and characterized. Differential thermal analysis (DTA) shows that the glass transition temperature, T_g, increases from 412 °C, for samples containing 20 mol% of WO₃, to 481 °C observed for glass containing 60 mol%. Sample containing 40 mol% in WO₃ were observed to be the most stable against devitrification. The structural organization of the glasses has been studied by using Fourier transform infra-red (FTIR), Raman, ³¹P Magic angle spinning (MAS) and spin echo nuclear magnetic resonance (NMR) spectroscopies. Results suggest two distinct networks comprising the glass structure, one with high SbPO₄ content and the other characteristic of the highest WO₃ content samples. The glasses present photochromic properties. Colour changes are observed for samples after exposure to ultraviolet or visible laser light. XANES, at L₁ absorption edge of tungsten, suggests partial reduction from W⁶⁺ to W⁵⁺ species during the laser irradiation. The photochromic effects and the colour changes, promoted by laser excitation, are reversible and easily removed by heat for during 1 h at 150 °C. Subsequent ‘write/erase’ cycles can be done without degradation of the glasses.     

Broad UHF ferromagnetic resonance of iron rich-aluminum pulsed laser deposited thin films

The magnetic susceptibility of Fe–Al off-normal pulsed laser deposited thin films was measured at ultra high frequencies, UHF. Different Fe_1?x–Al_x films from pure Fe to x = 0.2 Al were prepared. The films were ≈40 nm thick and non-crystalline peaks were detected by the X-ray diffractometry studies. The magnetization of the films remained between 2.0 and 1.8 T for composition less than or equal to 20% Al. A magnetic anisotropy, from H_k ≈ 18 Oe for pure Fe to H_k ≈ 130 Oe for 20% Al was measured. These samples exhibited a well-defined ferromagnetic resonance at frequencies between ≈2.0 GHz and 3.8 GHz depending on composition. The broad resonance peaks had a width, at half maximum, w_h, in the interval from 2.5 GHz to 4.0 GHz depending on Al content. After fitting the magnetic hysteresis loops using a simple distribution of anisotropy values, we used the Landau–Lifshitz–Gilbert equation to fit the UHF magnetic susceptibility. From this last fit we obtained a high damping coefficient value (≈4 times higher than that corresponding to Co or CoFe films), explaining this broad ferromagnetic resonance of these Fe_1?x–Al_x films.     

Effect of silver doping on the electrical properties of a-Sb2Se3

This paper reports the effect of Ag-doping on electrical properties of a-Sb₂Se₃ in the temperature range 230–340 K and frequency range 5–100 kHz. The variation of transport properties with thermal doping has been studied. Ag-doping produces two homogeneous phases in the sample, which are found to be voltage dependent in the temperature range studied and frequency dependent in lower frequency region (0.1–10 kHz). Activation energy E_g and C′ [= σ₀ exp (γ/k), where γ, is the temperature coefficient of the band gap] calculated from dc conductivity has been found to vary from (0.42 ± 0.01) eV to (0.26 ± 0.01) eV and (4.11 ± 0.01) × 10⁻⁵ to (2.90 ± 0.02) × 10⁻⁶ Ω⁻¹ cm⁻¹ respectively. Ag-doping can be used to make the sample useful in device applications.