Preparation and the third-order optical nonlinearities of the sodium borosilicate glass doped with Cu7.2S4 quantum dots

The sodium borosilicate glass doped with Cu_7.2S₄ quantum dots was prepared by using both sol–gel and atmosphere control methods. The formation mechanism and the microstructure of the glass were examined using differential thermal analysis and thermal gravimeter (TG-DTA), X-ray powder diffraction (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), scanning transmission electron microscopy (STEM), energy dispersive X-ray spectra (EDX), high-resolution transmission electron microscopy (HRTEM), and selected area electron diffraction (SAED). The results revealed that Cu_7.2S₄ quantum dots in orthorhombic crystal system had formed in the glass, and the size ranged from 9 nm to 21 nm. In addition, Z-scan technique was used to measure the third-order optical nonlinearities of the glass. The results indicated that the third-order optical nonlinear refractive index γ, the absorption coefficient β, and the susceptibility χ⁽³⁾ of the glass were 1.11 × 10^? 15 m²/W, 8.91 × 10^? 9 m/W, and 6.91 × 10^? 10 esu, respectively.     

Nonlinear optical properties of PbS quantum dots in boro-silicate glass

PbS quantum dots synthesis in boro-silicate glass is presented. Absorption bleaching of PbS quantum dots of ≈4 and ≈7 nm in diameter dispersed in this glass has been studied. Bleaching relaxation time of 20–30 ps, absorption saturation fluence of ≈5 mJ/cm² and ground-state absorption cross-section of 2 ÷ 6 × 10⁻¹⁷ cm² at the wavelengths corresponding to the first excitonic absorption band maxima are measured.     

Lead sulfide quantum dots in glasses controlled by silver diffusion

Precipitation of PbS quantum dots (QDs) in silicate glasses controlled by Ag⁺ ion diffusion was investigated. Ag⁺ ions penetrated ~ 0.5 μm into the glass when the glass was immersed in the AgNO₃ solution at 80 °C. Ag nano-particles (NPs) and PbS QDs were formed after heat-treatment at temperatures of 420–460 °C for 10 h. PbS QDs in Ag⁺-diffused regions photoluminesced at longer wavelengths than did those in Ag⁺-free regions. This indicates that PbS QDs thus formed in regions containing Ag NPs were larger than those in Ag⁺-free regions and this size difference was confirmed from the transmission electron microscope images. PbS QDs can grow at temperature as low as 420 °C in Ag⁺-diffused regions and this implies that PbS QDs form preferentially using Ag NPs as nucleating agents.     

Organometallic vapor phase epitaxy growth of upright metamorphic multijunction solar cells

We demonstrate an integrated metamorphic AlGaInP/AlGaInAs/GaInAs/Ge 4 J solar cell on Ge substrate using organometallic vapor phase epitaxy (OMVPE). A step graded GaInAs buffer was grown right after the Ge subcell was formed to change the lattice constant from that of Ge to that of Ga_0.8In_0.2As lattice constant followed by a 1.14 eV Ga_0.8In_0.2As subcell, a 1.5 eV (AlGa)_0.8In_0.2As subcell, and a 1.85 eV Al_xGa_0.32?xIn_0.68P subcell. Transmission electron microscope (TEM) study shows the threading dislocation density (TDD) is about 6×10⁶ cm^?2. The X-ray diffraction reciprocal space map (RSM) shows that the structure is 100% relaxed. Bandgap dependent (Al_xGa_1?x)_0.32In_0.68P subcell performance is systematically investigated. As the Al_xGa_0.32?xIn_0.68P cell bandgap goes up to 1.9 eV, the external quantum efficiency (EQE) goes down significantly. Theoretical simulation shows that the decrease of diffusion length causes the lower EQE, which indicates the material quality degrades with the increasing Al content. Integrated 4 J solar cells are fabricated and characterized with spectral response and tested under the AM1.5D terrestrial spectrum at both 1 sun and 2000 suns.     

Influence of Ag nanoparticles on luminescent performance of SiO2:Tb3 + nanomaterials

Tb^3 + single-doped SiO₂ (SiO₂:Tb^3 +) and Tb^3 +, Ag co-doped SiO₂ (SiO₂:Tb^3 +–Ag) nanostructured luminescent materials were prepared by a modified Stöber method. Their microstructure and optical property were investigated using scanning electron microscopy, ultraviolet visible absorption and photoluminescence spectrophotometry. Results show that the samples are composed of well-dispersed near-spherical particles with a diameter about 50 nm, the highest fluorescence intensity is obtained when the doping concentration of Tb^3 + is 4.86 mol%, the corresponding internal quantum efficiency is 13.6% and the external quantum efficiency is 8.2%. The experimental results indicate that Ag nanoparticles can greatly enhance the light absorption at 226 nm and the light emission at 543 nm of SiO₂:Tb^3 +–Ag, and the fluorescence lifetime reduces with increasing Ag concentration in SiO₂:Tb^3 +–Ag. Additionally, the present results indicate that fluorescence enhancement is attributed to the local field enhancement and the increased radiative decay rates induced by Ag nanoparticles.     

Optical properties of PbSe quantum dots embedded in oxide glass

The controlled synthesis of PbSe quantum dots in Se-doped glass matrix (SiO₂–Na₂CO₃–Al₂O₃–PbO₂–B₂O₃) with narrow size distributions was achieved. Quantum dot size can be manipulated by tuning annealing time in the process of thermal treatment. The PbSe QD sizes estimated by 4 × 4 k · p theory were in very good agreement with the measurements of atomic force microscopy.     

Structural change of laser-irradiated Ge2Sb2Te5 films studied by electrical property measurement

Sheet resistance of laser-irradiated Ge₂Sb₂Te₅ thin films prepared by magnetron sputtering was measured by the four-point probe method. With increasing laser power the sheet resistance undergoes an abrupt drop from 10⁷ to 10³ Ω/□ at about 580 mW. The abrupt drop in resistance is due to the structural change from amorphous to crystalline state as revealed by X-ray diffraction (XRD) study of the samples around the abrupt change point. Crystallized dots were also formed in the amorphous Ge₂Sb₂Te₅ films by focused short pulse laser-irradiated, the resistivities at the crystallized dots and the non-crystallized area are 3.375 × 10^?3 and 2.725 Ω m, sheet resistance is 3.37 × 10⁴ and 2.725 × 10⁷ Ω/□ respectively, deduced from the I–V curves that is obtained by conductive atomic force microscope (C-AFM).     

Photoluminescence of Si nanocrystallites in different types of matrices

This paper presents the comparative investigation of photoluminescence (PL) and its temperature dependence for rf-magnetron co-sputtered Si-enriched SiO_x systems and amorphous Si films prepared by hot-wire CVD method with Si nanocrystallites of different sizes. It is shown that PL spectra of Si–SiO_x films consist of the five PL bands peaked at 1.30, 1.50, 1.76, 2.05 and 2.32 eV. Amorphous Si films with Si nanocrystallites are characterized by three PL bands only peaked at 1.35, 1.50 and 1.76 eV. The peak position of the 1.50 eV PL band shifts with the change of Si quantum dot sizes and it is attributed to exciton recombination inside of Si quantum dots. The nature of four other PL bands is discussed as well.     

Self-aggregated Si quantum dots in amorphous Si-rich SiC

Amorphous silicon quantum dots (Si-QDs) self-aggregated in silicon-rich silicon carbide are synthesized by growing with plasma-enhanced chemical vapor deposition on (100)-oriented Si substrate. Under the environment of Argon (Ar)-diluted Silane (SiH₄) and pure methane (CH₄), the substrate temperature and RF power are set as 350 °C and 120 W, respectively, to provide the Si-rich SiC with changing fluence ratio (R = [CH₄ ]/[SiH₄] + [CH₄]). By tuning the fluence ratio from 50% to 70%, the composition ratio x of Si-rich Si_1 ? xC_x film is varied from 0.27 to 0.34 as characterized by X-ray photoelectron spectroscopy (XPS), which reveals the component of Si_2p decreasing from 66.3 to 59.5%, and the component of C_1s increasing from 23.9% to 31% to confirm the formation of Si-rich SiC matrix. Annealing of the SiC sample from 650 °C to 1050 °C at 200 °C increment for 30 min induces the very tiny shift on the wavenumber of the crystalline Si (c-Si) related peak due to the precipitation of Si-QDs within the SiC matrix, and the Raman scattering spectra indicate a broadened Raman peak ranging from 410 to 520 cm^? 1 related to the amorphous Si accompanied with the significant enhancement for SiC bond related peak at 980 cm^? 1. From the high resolution transmission electron microscopy images, the critical temperature for Si-QD precipitation is found to be 850 °C. The self-assembly of the crystallized Si-QDs with the size of 3 ± 0.5 nm and the volume density of (3 ± 1) × 10¹⁸ (#/cm³) in Si-rich SiC film with R = 70% are observed after annealing at higher temperature.     

Charging and Coulomb blockade effects of the nc-Si embedded in SiNx double-barrier structures

We fabricated a series of a-SiN_x/nc-Si/a-SiN_x double-barrier structures by plasma-enhanced chemical vapor deposition and subsequent thermal annealing technique. The photographs of transmission electron microscopy show that the nc-Si layer has been formed. The estimated density of nc-Si dots is of the order of 10¹¹–10¹² cm⁻². In the C–V measurements, for the samples with thicker SiN_x layer (30 nm), we observed C–V hysteresis characteristics, which can be explained by charging effect in nc-Si through the F–N tunneling mechanism; while for the sample with thinner SiN_x layer (5 nm), the C–V curves show the peak structures which can be attributed to the resonant tunneling of electrons into nc-Si controlled by Coulomb blockade effect. From the interval bias voltage between the two peaks, the Coulomb charging energy of nc-Si dot was estimated.     

Pronounced variation in the collective dynamics of highly correlated lightest liquid alkali metal: Lithium

Recently measured inelastic X-ray spectra (IXS) of detailed coherent dynamical structure factor S(κ, ω) and hence the equilibrium collective dynamics, of the lightest liquid alkali metal, lithium at 475 K, have been successfully explained using the modified microscopic theory of the collective dynamics of a simple liquid, in a huge wave-vector, κ, range: 1.4 nm^?1 ≤ κ ≤ 110.0 nm^?1, ?κ is the linear momentum transfer. The role of single particle motion in the collective dynamics of the liquid changes from diffusive for smaller values of wave-vector, κ < 21 nm^?1 to that of a free particle for higher κ-values, 21 nm^?1 ≤ κ ≤ 110 nm^?1. The quantum correction due to detailed balance condition in S(κ, ω) for liquid Li, whose dynamics, unlike that of quantum liquid ⁴He, is essentially classical, yields results in better agreement with the corresponding experimental S(κ, ω) and the quantum correction becomes significant for higher values of κ and ω. The wave-vector dependent variation of longitudinal viscosity, η_l, is in good agreement with the corresponding results obtained from memory function approach. The wave-vector dependent variation of single characteristic relaxation time lies in between the variation of two relaxation times of memory function approach.     

Crystal growth and spectral properties of Nd3+:Ca9Gd(VO4)7 crystal

An Nd³⁺:Ca₉Gd(VO₄)₇ crystal with dimensions of ?25×30 mm³ was grown by the Czochralski method. The hardness, thermal expansion coefficient and thermal conductivity coefficient of the crystal were measured. The spectroscopic characteristics of Nd³⁺:Ca₉Gd(VO₄)₇ crystals were investigated. The absorption band at 810 nm has an FWHM of 10 nm, and absorption cross-sections are 5.81×10^?20 cm² for π-polarization and 7.47×10^?20 cm² for σ-polarization at 810 nm. The emission cross-sections at 1067 nm are 4.2×10^?20 and 6.5×10^?20 cm² for π- and σ-polarizations, respectively. The quantum efficiency η_c is equal to 94.3%. To sum up the above results, Nd³⁺:Ca₉Gd(VO₄)₇ crystal can be regarded as a highly efficient solid state laser material.     

Measurement of diffusion coefficients of Au in liquid Ag with the shear cell technique

Diffusion coefficients of Au in liquid Ag were measured at the temperatures 1300 K and 1500 K by using the shear cell technique. The adopted technique was a modified long capillary method which had a diffusion couple configuration. Obtained diffusion coefficients of Au in liquid Ag were respectively 2.30 × 10⁻⁹ m² s⁻¹ at 1300 K and 3.16 × 10⁻⁹ m² s⁻¹ at 1500 K, which were in good agreement with calculations based on the hard sphere mixture model.     

Structure and photoelectrical properties of SiO2/Si/SiO2 single quantum wells prepared under ultrahigh vacuum conditions

SiO₂/Si/SiO₂ single quantum wells (QWs) were prepared under ultrahigh vacuum conditions in order to study their structural, chemical and photoelectrical properties with respect to a possible application in photovoltaic devices. Amorphous silicon (a-Si) layers (thickness <10 nm) were deposited onto quartz glass (SiO₂) substrates and subsequently oxidized with neutral atomic oxygen at moderate temperatures of 600 °C. Under these conditions, the formation of suboxides is mostly suppressed and abrupt Si/SiO₂ interfaces are obtained. Crystallization of a-Si QWs requires temperatures as high as 1000 °C resulting in a nanocrystalline structure with a small amorphous fraction. The spectral dependence of the internal quantum efficiency of photoconductivity correlates well with the nanocrystalline structure and yields mobility lifetime products of <10^?7 cm² V^?1. This rather low value points towards a strong influence of Si/SiO₂ interface states on the carrier mobility and the carrier lifetime in Si QWs. Electronic passivation of interface states by subsequent hydrogen treatment in forming gas enhances the internal quantum efficiency by nearly one order of magnitude.     

Preparation and third-order optical nonlinearity of glass ceramics based on GeS2–Ga2S3–CsCl pseudo-ternary system

Chalcohalide glass-ceramics based on GeS₂–Ga₂S₃–CsCl pseudo-ternary system were prepared by heat treatment method. X-ray diffraction and scanning electron microscope studies confirmed the formations of Ga₂S₃ and GeS₂ phase grains with sizes of 2–5 and 80 nm, respectively. Z-scan technology was employed to investigate the third-order nonlinear optical characteristics of both precursor glass and its glass ceramics at 800 nm. The results show that nonlinear refractive index n₂ as well as nonlinear absorption coefficient β increase after heat treatment, which is due to quantum effects, and the largest n₂ of the glass ceramics is 4.3 × 10^? 11 esu which is 4 times larger than that of the host.     

Fabrication and ionic conductivity of amorphous Li–Al–Ti–P–O thin film

Li⁺ ion conducting Li–Al–Ti–P–O thin films were fabricated on ITO-glass substrates at various temperatures from 25 to 400 °C by RF magnetron sputtering method. When the substrate temperature is higher than 300 °C, severe destruction of ITO films were confirmed by XRD (X-ray diffraction) and the abrupt transformation of one semi-circle into two semi-circles on the impedance spectra. These as-deposited Li–Al–Ti–P–O solid state electrolyte thin films have an amorphous structure confirmed by XRD and a single semicircle on the impedance spectra. Good transmission higher than 80% in the visible light range of these electrolyte thin films can fulfill the demand of electro-chromic devices. Field emission scanning electron microscopy and atomic force microscopy showed the denser, smoother and more uniform film structure with the enhanced substrate temperature. Measurements of impedance spectra indicate that the gradual increased conductivity of these Li–Al–Ti–P–O thin films with the elevation of substrate temperature from room temperature to 300 °C is originated from the increase of the pre-exponential factor (σ₀). The largest Li-ion conductivity can come to 2.46 × 10^? 5 S cm^? 1. This inorganic solid lithium ion conductor film will have a potential application as an electrolyte layer in the field such as lithium batteries or all-solid-state EC devices.     

Vapor hydration of SON68 glass from 90 °C to 200 °C: A kinetic study and corrosion products investigation

Corrosion of nuclear waste glass in unsaturated conditions is expected to occur upon the closure of the repository galleries during disposal cell saturation in the proposed French disposal site. The objectives of the present work were to determine the alteration kinetics of the SON68 reference in such conditions. Vapor hydration tests were conducted using thin, polished SON68 glass coupons contained in stainless steel autoclaves. Temperatures ranged between 90 °C and 200 °C and the relative humidity (RH) was maintained at 91 ± 1%. Additional experiments at 175 °C and 80, 85, 90 and 95% RH were also conducted to assess the role of RH on the glass corrosion rate. The nature and extent of corrosion have been determined by characterizing the reacted glass surface with scanning electron microscopy (SEM), transmission electron microscopy (TEM), and energy dispersive X-ray spectroscopy (EDS). Elemental profiling of the glass hydrated at 90 °C was studied by TOF-SIMS. The chemical composition of the external layer depends on experimental conditions. The hydration rate at 90 °C (TOF-SIMS analysis) is 10 × higher than the generally accepted final rate of SON68 in water at 90 °C (~ 10^? 4 g m^? 2 d^? 1). This may indicate that the glass hydration process cannot be simulated by experiments in aqueous solution with a high S/V ratio. Subsequent leaching (corrosion in an aqueous solution) of samples weathered in water vapor showed dissolution rate values higher than those of pristine glass. This result indicates that mobile elements are trapped within the alteration products during the hydration step and it gives insight into mobility variations of the considered elements.     

Influence of hydrogen on the thermomechanical properties of a-CNx:H and a-CNx films deposited by glow discharge and ion beam assisted deposition

The coefficient of thermal expansion (CTE), Young’s modulus, Poisson’s ratio, stress and hardness of a-CN_x and a-CN_x:H were investigated as a function of nitrogen concentration. Hydrogenated films were prepared by glow discharge, GD, and unhydrogenated films were prepared by ion beam assisted deposition, IBAD. Using nanohardness measurements and the thermally induced bending technique, it was possible to extract separately, Young’s modulus and Poisson’s ratio. A strong influence of hydrogen, in a-CN_x:H films, was observed on the CTE, which reaches about ∼9 × 10⁻⁶ C⁻¹, close to that of graphite (∼8 × 10⁻⁶ C⁻¹) for nitrogen concentration as low as 5 at.%. On the other hand, the CTE of unhydrogenated films increases with nitrogen concentration at a much lower rate, reaching 5.5 × 10⁻⁶ C⁻¹ for 33 at.% nitrogen.     

Nano-crystallization behavior of Zr–Cu–Al bulk glass-forming alloy

The glass-forming ability and devitrification behavior of a Zr₅₅Cu₃₅Al₁₀ bulk glass-forming alloy were examined to elucidate the very high nanocrystallization product density (> 10²³ m^?3). The crystallization kinetics and structural changes in the glassy alloy were studied using X-ray diffraction, transmission electron microscopy, differential scanning and isothermal calorimetry methods. The observed sequential phase formation during isothermal reaction and the high nanocrystal density are consistent with the influence of residual oxygen even at low levels (< 500 ppm) to promote nucleation.     

Thermo-optical properties and nonradiative quantum efficiency of Er3+-doped and Er3+/Tm3+-co-doped tellurite glasses

Thermal lens (TL) measurements were performed in tellurite glasses, 70TeO₂–19WO₃–7Na₂O–4Nb₂O₅ (mol%), undoped, doped with Er³⁺ (1.19 × 10²⁰ ions/cm³) and co-doped with Er³⁺ (1.19 × 10²⁰ ions/cm³)/Tm³⁺ (1.56 × 10²⁰ ions/cm³). The absolute nonradiative quantum efficiency (ϕ) was determined by the TL method. The ϕ values for Er³⁺/Tm³⁺-co-doped and Er³⁺-doped tellurite glasses were 0.98 and 0.74, respectively. Fluorescence spectra were performed at λ_e = 488 nm and used to estimate the fluorescence quantum efficiency (η) using the TL results. These values were compared with results obtained by Judd–Ofelt calculations.