Vertical Bridgman growth and characterization of large ZnGeP2 single crystals

The growth of ZnGeP₂ crystals by seeded Vertical Bridgman method was studied. High-quality near-stoichiometric ZnGeP₂ single crystals obtained were of 20–30 mm in diameter and 90–120 mm in length. By selection of the seed crystallographic orientation the single crystal ingots without cracks and twins were grown, as shown by X-ray diffraction. The infrared transmission property of the ZnGeP₂ crystals was studied by the calculated optical absorption coefficient spectra. The results showed that after thermal annealing of the crystals the optical absorption coefficient was ～0.10 cm^?1 at 2.05 μm, and ～0.01 cm^?1 at 3–8 μm. The rocking curves patterns of the (4 0 0) reflection demonstrated that the as-grown single crystals possessed a good structural quality. The composition of the crystals was close to the ideal stoichiometry ratio of 1:1:2. The low-loss typical ZnGeP₂ samples of 6 mm×6 mm×15 mm in sizes were cut from the annealed ingots for optical parametric oscillation experiments. The output power of 3.2 W was obtained at 3–5 μm when the incident pumping power of 2.05 μm laser was 9.4 W, and the corresponding slope efficiency and the conversion efficiency were 44% and 34%, respectively.     

Optical properties of Pr3+ in selenide glasses modified with CsI

Effects of CsI content on the optical properties of Ge₃₀Ga₅Sb₅Se₆₀ glasses were evaluated. Linear and non-linear absorption properties of the glasses without Pr³⁺ were examined in addition to 1.6 μm emission properties of the Pr-doped glasses. Blueshift of the UV-side absorption edge was accompanied with increasing CsI concentration, while non-linear absorption coefficients measured at 1.06 μm by the Z-scan method remained unaffected. Measured lifetimes of the 1.6 μm emission from modified glasses were comparable to those of the unmodified glass. These experimental observations are discussed in connection with a pronounced weak absorption tail appeared in selenide glasses with the addition of CsI.     

Temperature dependent blue second harmonic generation in Ba5Li2Ti2Nb8O30 microcrystals embedded in TeO2 glass–matrix

The as-quenched samples in the system (100 ? x) TeO₂-(x) Ba₅Li₂Ti₂Nb₈O₃₀ (2 ? x ? 8) were found to be embedded with 10–20 μm sized crystallites of the polar phase Ba₅Li₂Ti₂Nb₈O₃₀ (BLTN). Blue (400 nm) second harmonic generation (SHG) was observed in transmission mode when 800 nm laser light was allowed to pass through the individual crystallites. The blue SHG signal was temperature dependent and its intensity was maximum at ～175 °C which was tentatively attributed to the concomitant changes associated with the refractive indices of the BLTN crystallites. The SHG intensity attained a minimum value around the Curie temperature of BLTN crystals.     

Electromechanical and electro-optic properties of xBiScO3–yBiGaO3–(1−x−y)PbTiO3 single crystals

Single crystals in the xBiScO₃–yBiGaO₃–(1−x−y)PbTiO₃ (BS–BG–PT) system were grown by the high temperature solution method using Pb₃O₄ and Bi₂O₃ as the flux. The dielectric permittivity (ε_r) at room temperature for unpoled tetragonal crystals was determined to be 500–600 with dielectric loss tangents less than 0.3%. The Curie temperature was found to be around ∼420–450°C, with a dielectric maximum, exhibiting relaxor behavior. The longitudinal piezoelectric coefficient (d₃₃) was found to be ∼300 pC/N for 〈0 0 1〉 oriented tetragonal crystals with electromechanical coupling factor (k₃₃) of 75%, with a shear mode, d₁₅∼290 pC/N and k₁₅∼45%, lateral mode, d₃₁∼−55 pC/N and k₃₁∼−37%. The remnant polarization (P_r) was 46 μC/cm² with a coercive field (E_c) of 43 kV/cm at 1 Hz and DC field of 60 kV/cm. The linear electro-optic (E-O) coefficients of poled crystals determined using an automated scanning Mach–Zehnder interferometer method at room temperature and wavelength of 632.8 nm were r₃₃=36 and r₁₃=4 pm/V, respectively.     

Roughness of glass surfaces formed by sub-critical crack growth

This paper presents a study on the roughness of glass fracture surfaces formed as a consequence of sub-critical crack growth. Double-cantilever-beam specimens were used in these studies to form fracture surfaces with areas under well-defined crack velocities and stress intensity factors. Roughness depends on crack velocity: the slower the velocity, the rougher the surface. Ranging from approximately 1 × 10⁻¹⁰ m/s to approximately 10 m/s, the velocities were typical of those responsible for the formation of fracture mirrors in glass. Roughness measurements were made using atomic force microscopy on two glass compositions: silica glass and soda lime silica glass. For silica glass, the RMS roughness, R_q, decreased from about 0.5 nm at a velocity of 1 × 10⁻¹⁰ m/s to about 0.35 nm at a velocity of 10 m/s. For soda lime silica glass, the roughness decreased from about 2 nm to about 0.7 nm in a highly non-linear fashion over the same velocity range. We attributed the roughness and the change in roughness to microscopic stresses associated with nanometer scale compositional and structural variations within the glass microstructure. A theory developed to explain these results is in agreement with the data collected in the current paper. The RMS roughness of glass also depends on the area used to measure the roughness. As noted in other studies, fracture surfaces in glass exhibit a self-affine behavior. Over the velocities studied, the roughness exponent, ζ, was approximately 0.3 for silica glass and varied from 0.18 to 0.28 for soda lime silica glass. The area used for these measurements ranged from (0.5 μm)² to (5.0 μm)². These values of the roughness exponent are consistent with values obtained when the scale of the measurement tool exceeds a critical size, as reported earlier in the literature.     

Absorption and luminescence in amorphous SixGe1-xO2 films fabricated by SPCVD

Optical absorption and photoluminescence of Ge-doped silica films fabricated by the surface-plasma chemical vapor deposition (SPCVD) are studied in the 2–8 eV spectral band. The deposited on silica substrate films of about 10 μm in thickness are composed as x·GeO₂-(1-x)·SiO₂ with x ranging from 0.02 to 1. It is found that all as‐deposited films do not luminesce under the excitation by a KrF (5 eV) excimer laser, thus indicating lack of oxygen deficient centers (ODCs) in them. After subsequent fusion of silicon containing (x < 1) films by a scanning focused CO₂ laser beam absorption band centered at 5 eV as well as two luminescence bands centered at blue (3.1 eV) and UV (4.3 eV) wavelengths arise, highlighting the formation of the ODCs. The excitation of unfused SPCVD films by an ArF (6.4 eV) excimer laser yields a luminescence spectrum with two bands typical for the ODCs, but with a faster decay kinetics. Intensities of these bands grow up with samples cooling down to a temperature of 80–60 K. Unfused films excited by the ArF laser also demonstrate luminescence due to recombination of a trapped charge resulted from the excitation of localized electron states of the glass network. In the unfused GeO₂ film luminescence related to a self-trapped exciton (STE) typical for GeO₂ crystals with α-quartz structure is observed. The observed STE luminescence can be indicative of the crystalline fraction availability in the film. Whereas GeO₂ crystals are known as not containing twofold coordinated germanium, a polycrystalline inclusion in the SPCVD GeO₂ film serves as a factor explaining the absence of any spectroscopic manifestation of this type of defects in it even after fusion. On the other hand, lack of STE luminescence in other unfused films with x < 1 testifies truly amorphous state of the matter in them.     

Low-K factor of SiO2 layer on Si irradiated by YAG:Nd laser

The change of optical and electrical properties of SiO₂ layer on Si single crystal exposed to YAG:Nd laser radiation has been found experimentally. The second harmonic of YAG:Nd laser was used as a source of light. Before irradiation the SiO₂ layer with thickness 0.75 μm had red color in reflecting light due to the interference. After irradiation with the laser with intensity of more than 3.5 MW/cm² red color changed to yellow. However, samples with thickness 0.21 μm did not change color after irradiation. We explain such peculiarities of optical properties by change of optical path. Capacity (C) measurements of SiO₂ layer with thickness 0.21 μm by the method of capacity–voltage characteristics have shown a decrease of C to more than 40%. It is possible if real part of dielectric permittivity (K) decreases or thickness of the SiO₂ layer increases. Atomic force microscope and profilemeter measurements did not show any change of surface roughness for the SiO₂ layer with thickness 0.21 μm. We suppose that after irradiation of the SiO₂ layer decrease of K takes place due to the formation of nanopores in SiO₂ or/and generation of the charged point defect at the interface of Si–SiO₂. Particularly the first is in agreement with measurements of micro hardness and capillary effect.     

Influence of Bi2O3 content on the crystallization behavior of TeO2–Bi2O3–ZnO glass system

Glass ceramic materials with composition 75TeO₂–xBi₂O₃–(25-x)ZnO (x = 13, 12, 11) possessing transparency in the near- and mid-infrared (MIR) regions were studied in this paper. It was found that as the Bi₂O₃ content increased in the glass composition, the observed crystallization tendency is enhanced, and high crystal concentrations were obtained for the glasses with high Bi₂O₃ content while maintaining transparency in the MIR region. Crystal size in the glass ceramic was reduced by adjusting the heat treatment conditions; the smallest average size obtained in this study is 700 nm. Bi_0.864Te_0.136O_1.568 was identified using X-ray Diffraction (XRD) and found to be the only crystal phase developed in the glass ceramics when the treatment temperature was fixed at 335 °C. The morphology of the crystals was studied using Scanning Electron Microscopy (SEM), and crystals were found to be polyhedral structures with uniform sizes and a narrow size distribution for a fixed heat treatment regime. Infrared absorption spectra of the resulting glass ceramics were studied. The glass ceramic retained transparency in the infrared region when the crystals inside were smaller than 1 μm, with an absorption coefficient less than 0.5/cm in the infrared region from 1.25 to 2.5 μm. The mechanical properties were also improved after crystallization; the Vickers Hardness value of the glass ceramic increased by 10% relative to the base glass.     

Single crystal growth from the melt and magnetic properties of hexaferrites–aluminates

Single crystals of aluminum substituted barium hexaferrite were grown by the floating zone method with optical heating. Single crystals were produced from a melt of stoichiometric composition. The process was carried out under a pressure of 50 atm of oxygen. In the system BaO–(x)Al₂O₃–(6?x)Fe₂O₃ the region of single phase crystal growth from the melt is limited by the value x=3. For higher substitutions single-phase crystallization is not observed. The grown single crystals are cylindrical boules with a diameter of 4–5 mm and with lengths up to 50 mm. To avert cracking the crystals have been annealed during the process of growth at 1100 °C. The content of FeO in the composition of single crystals of barium hexaferrite, grown by zone melting under an oxygen pressure of 50 atm, is approximately 0.3 wt%. In the system of hexaferrite–aluminates the macroscopic magnetic moment of the material disappears at x=3.     

Growth improvement and quality evaluation of ZnGeP2 single crystals using vertical Bridgman method

ZnGeP₂ single crystals were grown using two-temperature zone vertical Bridgman method. The effect of crucible material, crucible shape, and cooling program on the growth of the ZnGeP₂ crystal was investigated. The qualities of the crystals were evaluated by high resolution X-ray diffraction, X-ray fluorescence spectrometry, and IR transmittance spectra. The results show that the full width at half maximum of the rocking curves for (200), (004), and (220) faces are 45″, 37″, and 54″, respectively. The concentration of the P, Zn and Ge are almost homogeneous along the growth axis, but P and Zn are slightly deficient compared with Ge in the as-grown ZnGeP₂ crystals. The increase of annealing temperature from 600 °C to 700 °C has little effect on the reduction of the absorption losses in ZnGeP₂ powders, and has negative effect on the reduction of the absorption losses in ZnP₂ powders. Annealed in ZnP₂ powders at 600 °C for 300 h, the optical absorption loss at 2.05 μm reduce by 37%, compared with that of 27% reduction annealed in ZnGeP₂ powders.     

Use of sandwich structures with ZnO:Al transparent electrodes for the measurement of the electro-optic properties of standard and fluorinated poled copolymers at λ = 1.55 μm

We report on the measurement of the electro-optic coefficient r₃₃ of poled polymers at λ = 1.55 μm via the non-linear ellipsometry technique (or Teng and Man technique). Since the measurements rely on the use of sandwich structures with transparent electrodes, different types of aluminium doped zinc oxide (ZnO:Al) are taken into account in order to ensure transparency at the infrared range wavelength. Results on the disperse red 1/poly-methyl-metacrylate (DR1–PMMA) based side-chain benchmark system, with several different concentrations of active groups from 0.05 to 0.58 molar, are reported and demonstrate the reliability of the technique. The measurement technique was then used to evaluate the r₃₃ coefficient of copolymers derived from DR1–PMMA by partial fluorination (FATRIFE). In this case, we measured copolymers with three concentrations of active groups, 0.30, 0.37 and 0.56 molar.     

Growth of CdSiP2 single crystals by self-seeding vertical Bridgman method

Using a high purity CdSiP₂ polycrystalline charge synthesized in a single-temperature zone furnace, a CdSiP₂ single crystal with dimensions of 8 mm in diameter and 40 mm in length was successfully grown by the vertical Bridgman method. The quality of the crystal was characterized by high resolution X-ray diffraction and the full width at half maximum (FWHM) of the rocking curve for the (200) face is 33″. Thermal property measurements show that: the mean specific heat of CdSiP₂ between 300 and 773 K is 0.476 J g^?1 K^?1; the thermal conductivity of the crystal along the a- and c-axes is 13.6 W m^?1 K^?1 and 13.7 W m^?1 K^?1 at 295 K, respectively; and the thermal expansion coefficient measured along the a- and c-axes is 8.4×10^?6 K^?1 and ?2.4×10^?6 K^?1, respectively. The optical transparency range of the crystal is 578–10,000 nm, and there is no absorption loss in the spectrum from 0.7 to 2.5 μm, as often exists with ZnGeP₂ crystals grown from the melt.     

Investigation of directional solidified Al–Ti alloy

Al–1 wt% Ti alloy was directionally solidified upwards under argon atmosphere under the two conditions; with different temperature gradients (G = 2.20–5.82 K/mm) at a constant growth rate (V = 8.30 μm/s) and with different growth rates (V = 8.30–498.60 μm/s) at a constant temperature gradient (G = 5.82 K/mm) in a Bridgman furnace. The dependence of characteristic microstructure parameters such as primary dendrite arm spacing (λ₁), secondary dendrite arm spacing (λ₂), dendrite tip radius (R) and mushy zone depth (d) on the velocity of crystal growth and the temperature gradient were determined by using a linear regression analysis. A detailed analysis of microstructure development with models of dendritic solidification and with previous similar experimental works on dendritic growth for binary alloys were also made.     

Effect of Al2O3 addition on the formation of perovskite-type NaNbO3 nanocrystals in silicate-based glasses

The crystallization behavior of 30Na₂O–25Nb₂O₅–(45 ? x) SiO₂–xAlO_1.5 (x = 0, 2.5, and 5) (mol%) glasses was examined and the effect of Al₂O₃ addition on the formation of perovskite-type NaNbO₃ crystals was clarified. It is found from X-ray diffraction analyses and transmission electron microscope observations that NaNbO₃ nanocrystals are formed in all glasses and the size of NaNbO₃ crystals decreases with the substitution of Al₂O₃ for SiO₂. A crystallized (heat-treated at 684 °C for 5 h) glass with x = 5, which contains NaNbO₃ nanocrystals with an average size of 50 nm, shows good optical transparency in the wavelength region of 500–2000 nm and a small hysteresis loop in the polarization–electric field curve. The lines containing NaNbO₃ crystals were patterned on the surface of NiO-doped glass with x = 5 by irradiations (power: 1.3–1.4 W, scanning speed: 10 μm/s) of Yb:YVO₄ fiber laser (wavelength: 1080 nm). The formation mechanism of NaNbO₃ nanocrystals in aluminosilicate glasses was also discussed.     

The effect of CdS addition on linear and non-linear refractive indices of glasses in the system TeO2/Nb2O5/ZnO

Glasses in the system TeO₂/Nb₂O₅/ZnO/CdS were studied with respect to the density, molar volume, refractive index, polarizability, molar refraction, metallization and third order non-linear optical susceptibility. The third order non-linear optical susceptibilities, χ⁽³⁾, were measured using degenerate four-wave mixing (DFWM). The addition of CdS to TeO₂-based glasses leads to increasing refractive as well as the non-linear refractive indices. The largest measured value of the third order non-linear optical susceptibility was 7.8 × 10^?13 esu and has been found in the 90TeO₂ · 5Nb₂O₅ · 5ZnO · 0.4 CdS glass. The non-linear optical susceptibility increased with increasing CdS-concentration. In order to estimate the third order non-linear optical susceptibility, the theoretical model of Lines and the empirical equation of Miller were used.     

1.5 μm Emission and infrared-to-visible frequency upconversion in Er+3/Yb+3-doped phosphoniobate glasses

Sodium phosphoniobate glasses with the composition (mol%) 75NaPO₃–25Nb₂O₅ and containing 2 mol% Yb³⁺ and x mol% Er³⁺ (0.01 ⩽ x ⩽ 2) were prepared using the conventional melting/casting process. Er³⁺ emission at 1.5 μm and infrared-to-visible upconversion emission, upon excitation at 976 nm, are evaluated as a function of the Er³⁺ concentration. For the lowest Er³⁺ content, 1.5 μm emission quantum efficiency was 90%. Increasing the Er³⁺ concentration up to 2 mol%, the emission quantum efficiency was observed to decrease to 37% due to concentration quenching. The green and red upconversion emission intensity ratio was studied as a function of Yb³⁺ co-doping and the Er³⁺–Er³⁺ energy transfer processes.     

Mechanism of crystallization of fast fired mullite-based glass–ceramic glazes for floor-tiles

The mechanism of crystallization from a B₂O₃-containing glass, with composition based in the CaO–MgO–Al₂O₃–SiO₂ system, to a glass–ceramic glaze was studied by different techniques. Glass powder pellets were fast heated, simulating current industrial tile processing methods, at several temperatures from 700 to 1200 °C with a 5 min hold. Microstructural study by field emission scanning electron microscopy revealed that a phase separation phenomenon occurred in the glass, which promoted the onset of mullite crystallization at 900 °C. The amount of mullite in the glass heated between 1100 and 1200 °C was around 20 wt%, as determined by Rietveld refinement. The microstructure of the glass–ceramic glaze heated at 1160 °C consisted of interlocked, well-shaped, acicular mullite crystals longer than 4 μm, immersed in a residual glassy phase.     

Magnetic and magnetostrictive behavior of Dy3+ doped CoFe2O4 single crystals grown by flux method

We studied the effect of Dy³⁺ content on the magnetic properties of cobalt ferrite single crystal. The single crystals of CoFe_1.9Dy_0.1O₄ were grown by the flux method using Na₂B₄O₇.10 H₂O (Borax) as a solvent (flux). The black and shiny single crystals were obtained as a product. The X-ray diffraction analysis at room temperature confirmed the spinel cubic structure with lattice constant a=8.42 Å of the single crystals. The compositional analysis endorses the presence of constituents Co, Fe and Dy elements after sintering at 1300 °C within the final structure. The magnetic hysteresis measurements at various temperatures viz. 10 K, 100 K, 200 K and 300 K reveal the soft ferrimagnetic nature of the single crystal than that of for pure CoFe₂O₄. The observed saturation magnetization (M_s) and coercivity (H_c) are found to be lower than that of pure CoFe₂O₄ single crystal. The magnetostriction (λ) measurement was carried out along the [001] direction. The magnetic measurements lead to conclude that the present single crystals can be used for magneto-optic recording media.     

Phase composition,microstructure and conductivity of (85-α)VO2–15(Vanadium–Phosphate–Glass)–αCu glass–ceramics

Electric conductivity, microstructure and phase composition of (85-α)VO₂–15VPG–αCu glass–ceramics (VPG = Vanadium–Phosphate–Glass) with copper content in the interval 0 wt% ⩽ α ⩽ 15 wt% were investigated. VPG is the glass (molar %) 80V₂O₅–20P₂O₅. Only two phases: VO₂ and VPG were identified when α ⩽ 5 wt%. VO₂ crystallites, VPG and pores are observed in these ceramic microstructures. Glass forms layers 1–2 μm thick in the space between VO₂ crystallites. The copper is dissolved in VPG during glass–ceramic synthesis. It increases the electric conductivity of the glass and provides improvement of electrical bonds between VO₂ crystallites. Therefore glass–ceramics conductivity exhibits an abrupt change of approximately 100× in the vicinity of the phase transition temperature, T_t, in VO₂. A new crystalline phase appears in (85-α)VO₂–15VPG–αCu ceramics when α ∼ 6 wt%. This phase is observed as small crystallites with the sizes of 1–5 μm. The increase in such phase content, with an increase in copper content is accompanied by a decrease in the content of VO₂. Percolation along the new phase is a primary contributor to electric conductivity when α ⩾ 8 wt%. In this case the conductivity exhibits no abrupt change in the vicinity of the temperature T_t. The new phase is probably the bronze Cu_xV₂O₄. It crystallizes from a liquid phase during glass–ceramics synthesis.     

The densities of mixed glass former 0.35 Na2O + 0.65 [xB2O3 + (1 − x)P2O5] glasses related to the atomic fractions and volumes of short range structures

The mixed glass former effect (MGFE) is defined as a non-linear and non-additive change in the ionic conductivity with changing glass former fraction at constant modifier composition between two binary glass forming compositions. In this study, mixed glass former (MGF) sodium borophosphate glasses, 0.35 Na₂O + 0.65 [xB₂O₃ + (1 ? x)P₂O₅], 0 ≤ x ≤ 1, which have been shown to have a strong positive MGFE, have been prepared and their physical properties, density and molar volume, have been examined as predictors of structural change. The density exhibits a strong positive non-linear and non-additive change in the density with x and a corresponding negative non-linear and non-additive change in the molar volume. In order to understand the structural origins of these changes, a model of the molar volume was created and best-fit to the experimentally determined molar volumes in order to determine the volumes of the short range order (SRO) structural units in these glasses, how these volume change from the molar volumes of the binary glasses, and how these volumes change across the range of x in the ternary glasses. The best-fit model was defined as the model that required the smallest changes in the volumes of the ternary phosphate and borate SRO structural groups from their values determined by the densities of the binary sodium phosphate and sodium borate glasses. In this best-fit molar volume model, it was found that the volumes of the various phosphate and borate SRO structural groups decreased by values ranging from a minimum value of ~ 1% for x = 0.1 and 0.9 to a maximum value of ~ 6% for the phosphate and ~ 9% for the borate SRO groups at the minimum in molar volume at x = 0.4. The free volume was found to have a negative deviation from linear which is unexpected given the positive deviation in ionic conductivity.