Non-isothermal crystallization kinetic studies on MgO–Al2O3–SiO2–TiO2 glass

Thermal stability and crystallization kinetics of the glass 21% MgO, 21.36% Al₂O₃, 53.32% SiO₂ and 4.11% TiO₂ (mol%) has been studied using differential thermal analysis (DTA), dilatometry and X-ray diffraction (XRD). Glass in both bulk and frit forms were produced by melting in platinum crucible at 1600 °C for 1–2 h. From variation of DTA peak maximum temperature with heating rate, the activation energies of crystallization were calculated to be 340 kJ mol⁻¹ and 498 kJ mol⁻¹ for first and second crystallization exotherms, respectively. Crystallization of bulk glass was carried out at various temperatures and for different time durations in the range of 850–1000 °C. The influence of the addition of TiO₂ on the crystallization sequence of the glass was experimentally determined and discussed.     

Glass transition in the stable crystalline state of 2,5-dichlorothiophene

Heat capacities of 2,5-dichlorothiophene were measured between 13 and 300 K using an adiabatic calorimeter. Fusion temperature at the triple point was found to be 232.72 K and the enthalpy and entropy of fusion were determined to be 11.87 kJ mol⁻¹ and 51.0 J K⁻¹ mol⁻¹, respectively. The glass transition temperature and the associated heat capacity jump in the stable crystalline phase were determined to be 138 K and 0.53 J K⁻¹ mol⁻¹, respectively. The activation energy was estimated to be 45 kJ mol⁻¹, and a linear relation between the activation energy and the glass transition temperature was confirmed to hold.     

Properties and structure of (1 − x)Li2O–xNa2O–Al2O3–4SiO2 glass systems

(1 − x)Li₂O–xNa₂O–Al₂O₃–4SiO₂ glasses were studied for the progressive percentage substitution of Na₂O for Li₂O at the constant mole of Al₂O₃ and SiO₂. The crystallization temperature at the exothermic peak increased from 898 to 939 °C when the Na₂O content increases from 0 to 0.6 mol. The coefficient of thermal expansion and density of these as-quenched glasses increase from 6.54 × 10⁻⁶ °C⁻¹ to 10.1 × 10⁻⁶ °C⁻¹ and 2.378 g cm⁻³ to 2.533 g cm⁻³ when the Na₂O content increases from 0 to 0.4 mol, respectively. The electrical resistivity has a maximum value at Na₂O · (Li₂O + Na₂O)⁻¹ = 0.4. The activation energy of crystallization decreases from 444 to 284 kJ mol⁻¹ when the Na₂O content increased from 0 to 0.4 mol. Moreover, the activation energy increases from 284 kJ mol⁻¹ to 446 kJ mol⁻¹ when the Na₂O content increased from 0.4 to 0.6 mol. The FT-IR spectra show that the symmetric stretching mode of the SiO₄ tetrahedra (1035–1054 cm⁻¹) and AlO₄ octahedra (713–763 cm⁻¹) exhibiting that the network structure is built by SiO₄ tetrahedra and AlO₄.     

Deceleration of surface structural relaxation in chlorine-containing silica glass due to chlorine volatilization

Both surface and bulk fictive temperatures of chlorine-containing silica glass were measured using the IR method, after thermal, mechanical and chemical treatments. A metastable equilibrium state at 1200 °C was first established for the glass by heat-treatment and a uniform fictive temperature was observed except for the sample surface created by polishing after the heat-treatment. The densified layer of the polished surface shifted the IR peak wavenumber, making the fictive temperature appear higher than the bulk. During the second heat-treatment at 950 °C, the sample with the as-heat-treated surface and uniform fictive temperature of 1200 °C developed non-uniform fictive temperature distribution with the bulk fictive temperature becoming lower than the surface fictive temperature. Usually, surface structural relaxation is faster than bulk structural relaxation and the surface fictive temperature becomes lower than the bulk fictive temperature when heat-treated at a lower temperature than the initial fictive temperature. The observed anomalous feature was attributed to chlorine volatilization from the glass surface layer creating a high viscosity surface layer. This conclusion was supported by the diffusion data of chlorine in the glass available in the literature.     

Kinetics of crystal growth of germanium disulfide in Ge0.38S0.62 chalcogenide glass

The crystal growth kinetics of GeS₂ in Ge_0.38S_0.62 glass has been studied by Differential Scanning Calorimetry (DSC) and microsopy. The linear crystal growth kinetics of both high temperature α-GeS₂ and low temperature β-GeS₂ polymorphs has been observed over a relatively broad range of temperatures, i.e. 420 < T < 494 °C that correspond to viscosity of supercooled melt: 3 × 10⁹ > η > 8 × 10⁵ Pa s. It seems that 2D nucleated growth is the most probable mechanism of crystallization for high temperature α-GeS₂ under these conditions. However, there are significant deviations for this model for the crystallization of low-temperature β-GeS₂. This might indicate some changes in crystal-melt interfacial energy or break down of Stokes–Einstein relation in that particular case. At temperatures below 500 °C the temperature range of directly observed crystal growth overlaps with isothermal DSC measurements. In this case overall crystallization kinetics can be described by the Johnson–Mehl–Avrami (JMA) nucleation-growth model for kinetic exponent n ≅ 4. The value of activation energy of nucleation estimated from these experiments E_N = 434 kJ mol⁻¹ is comparable with the activation energy of viscous flow in supercooled Ge_0.38S_0.62 melt (E_η = 478 kJ mol⁻¹). A more complex eutectic crystallization involving both GeS₂ and GeS phases has been observed at higher temperatures. This process is probably associated with secondary nucleation and cannot be described by a simple JMA model.     

Mechanism of crystallization of fast fired mullite-based glass–ceramic glazes for floor-tiles

The mechanism of crystallization from a B₂O₃-containing glass, with composition based in the CaO–MgO–Al₂O₃–SiO₂ system, to a glass–ceramic glaze was studied by different techniques. Glass powder pellets were fast heated, simulating current industrial tile processing methods, at several temperatures from 700 to 1200 °C with a 5 min hold. Microstructural study by field emission scanning electron microscopy revealed that a phase separation phenomenon occurred in the glass, which promoted the onset of mullite crystallization at 900 °C. The amount of mullite in the glass heated between 1100 and 1200 °C was around 20 wt%, as determined by Rietveld refinement. The microstructure of the glass–ceramic glaze heated at 1160 °C consisted of interlocked, well-shaped, acicular mullite crystals longer than 4 μm, immersed in a residual glassy phase.     

Crystallization of amorphous Al2O3–SiO2 precursors doped with nickel

The crystallization of amorphous diphasic Al₂O₃–SiO₂ precursors doped with nickel has been studied by differential scanning calorimetry (DSC), XRD diffraction (XRD) and scanning and transmission electron microscopy (SEM, TEM) equipped with energy dispersive X-ray spectroscopy (EDS). Diphasic gels with constant atomic ratio (Al + Ni)/Si = 3:1, where 0, 1, 2 and 3 at.% of aluminum were replaced by nickel, have been prepared by hydrolyzing of TEOS in aqueous solution of aluminum nitrate. Crystallization of Ni-containing γ-Al₂O₃ preceded the crystallization of Al–Si spinel. Activation energy of 603 ± 16 kJ mol⁻¹ for crystallization of Ni-containing γ-Al₂O₃ was obtained in non-isothermal conditions. Ni-incorporated γ-Al₂O₃ transforms gradually with the temperature increase into Ni aluminate spinel, while Al–Si spinel reacts with amorphous silica forming mullite at about 1200 °C. Rietveld structure refinement of phases present in the samples annealed at 1600 °C and SEM-EDS and TEM-EDS analyses of related phases have shown that nickel predominantly crystallizes as NiAl₂O₄, but small amount of nickel is incorporated in mullite structure, as well as, dissolved in the glassy phase of the system.     

Melting enthalpy ΔHm for describing glass forming ability of bulk metallic glasses

A new melting enthalpy ΔH_m criterion for the prediction of glass forming ability (GFA) of alloys is proposed and five Zr–Al–Ni–Cu bulk metallic glasses (BMG) with critical dimension Z_max up to ? 7.5 mm are also developed by us in the light of the optimum ΔH_m of Zr–Al–Ni–Cu alloy system. And then, we researched the relationships between ΔH_m and two GFA parameters (critical cooling rate R_c and Z_max) of five bulk metallic glass (BMG) systems, such as Mg–Ni–Nd, Pd–Cu–Si, La–Al–Ni–Cu, Zr–Al–Ni–Cu and Zr–Ti–Ni–Cu–Be, respectively. The results show that the relationships between ΔH_m and R_c are all concave upward parabolas, and the optimum ΔH_ms for Mg–Ni–Nd, Pd–Cu–Si, Zr–Al–Ni–Cu, Zr–Ti–Ni–Cu–Be and La–Al–Ni–Cu are 10.3960 kJ mol^?1, 21.2202 kJ mol^?1, 19.7146 kJ mol^?1, 18.1455 kJ mol^?1 and 13.1558 kJ mol^?1, respectively. On the contrary, the relationships between ΔH_m and Z_max are all concave downward parabolas, and the optimum ΔH_ms for Mg–Ni–Nd, Pd–Cu–Si, Zr–Al–Ni–Cu, Zr–Ti–Ni–Cu–Be and La–Al–Ni–Cu are 10.5530 kJ mol^?1, 21.0830 kJ mol^?1, 19.6603 kJ mol^?1, 19.7231 kJ mol^?1 and 13.1173 kJ mol^?1, respectively. Furthermore, other BMGs’ R_cs or Z_maxs predicted by above-mentioned relationships satisfactorily agree with the tested results, which indicates that these relationships are reliable. However, the predicted results are reliable only if the main components are similar with the fitted BMGs or the additive is sparkle enough that the alloy’s character does not change. On the whole, the ΔH_m can act as a criterion for quickly predicting the alloy’s GFA and be helpful for the development of new BMGs.     

High-quality AlN layers grown by hot-wall MOCVD at reduced temperatures

We report on a growth of AlN at reduced temperatures of 1100 °C and 1200 °C in a horizontal-tube hot-wall metalorganic chemical vapor deposition reactor configured for operation at temperatures of up to 1500–1600 °C and using a joint delivery of precursors. We present a simple route—as viewed in the context of the elaborate multilayer growth approaches with pulsed ammonia supply—for the AlN growth process on SiC substrates at the reduced temperature of 1200 °C. The established growth conditions in conjunction with the particular in-situ intervening SiC substrate treatment are considered pertinent to the accomplishment of crystalline, relatively thin, ～700 nm, single AlN layers of high-quality. The feedback is obtained from surface morphology, cathodoluminescence and secondary ion mass spectrometry characterization.     

Structural and optical properties of TiO2 thin films derived by sol–gel dip coating process

Nanocrystalline thin films of titanium dioxide have been fabricated on glass and silica substrates from partially hydrolyzed precursor solution. These films were subjected to heat treatment for 1 h at temperatures 100, 200, 300, 400, 500, 600, 700, 800 and 900 °C and characterized by XRD, SEM, XPS and optical techniques. As deposited films are found to be amorphous and also contain hydroxyl and organic functional groups. Films heat treated above 100 °C do not contain hydroxyl and organic functional groups. Microcrystalline behavior is observed in the films heat treated above 300 °C. Crystallite size increases from ∼5 to 50 nm as sintering temperature is increased from 300 to 700 °C. Formation of anatase phase with c-axis length 7.03 Å is observed in the films annealed up to 700 °C. These films peel off from the substrate beyond 700 °C annealing temperature. Density as well as refractive index of the films increases with increase in annealing temperature up to 700 °C. Refractive index is found to show Cauchys behavior. Transmission better than 70% is observed in the visible range. There is a strong absorption around 370 nm, which is attributed to band gap absorption of the material.     

Lead sulfide quantum dots in glasses controlled by silver diffusion

Precipitation of PbS quantum dots (QDs) in silicate glasses controlled by Ag⁺ ion diffusion was investigated. Ag⁺ ions penetrated ~ 0.5 μm into the glass when the glass was immersed in the AgNO₃ solution at 80 °C. Ag nano-particles (NPs) and PbS QDs were formed after heat-treatment at temperatures of 420–460 °C for 10 h. PbS QDs in Ag⁺-diffused regions photoluminesced at longer wavelengths than did those in Ag⁺-free regions. This indicates that PbS QDs thus formed in regions containing Ag NPs were larger than those in Ag⁺-free regions and this size difference was confirmed from the transmission electron microscope images. PbS QDs can grow at temperature as low as 420 °C in Ag⁺-diffused regions and this implies that PbS QDs form preferentially using Ag NPs as nucleating agents.     

Soft hydrogels for dual use: Template for metal nanoparticle synthesis and a reactor in the reduction of nitrophenols

A novel hydrogel based on poly(sulfopropylmethacrylate) (p(SPM) with different crosslinking degrees was synthesized and characterized. The prepared hydrogels were for the first time, utilized for in situ metal nanoparticle preparation such as Ni, Co, and Cu and employed as a reaction media in catalytic reduction of 4-nitrophenol (4-NP), and 2-nitrophenol (2-NP) to 4-aminophenol and 2-aminophenol, respectively. The experimental parameters that effect reduction rates such as temperature and the amount of catalyst were investigated. The kinetics of the reduction reaction of nitro compounds under different reaction conditions were investigated to determine the activation parameter. Activation energies were found as 33.86 kJ mol^? 1 and 24.96 kJ mol^? 1 for 4-NP and 2-NP, respectively. It was found that hydrogel–Cu composites can provide 98% activity even at the end of the 7th repetitive usage.     

Effect of OH-content on thermal and chemical properties of SnOP2O5 glasses

Glasses with 55–60 mol% SnO and 40–45 mol% P₂O₅ have shown extremely large differences in the chemical and thermal properties depending on the temperature at which they were melted. Glasses prepared at low melting temperature, 450–550 °C, had low T_g, 150–200 °C, and low chemical stability. Glasses prepared at high melting temperature, 800–1200 °C, had much higher T_g, 250–300 °C, and much higher chemical stability. No significant differences were found by ¹¹⁹Sn Mössbauer and ³¹P Nuclear Magnetic Resonance spectroscopy. Large differences in the OH-content could be detected as the reason by infrared absorption spectroscopy, thermal analyses, and ¹H Nuclear Magnetic Resonance spectroscopy. In samples with low T_g, a broad OH – vibration band around 3000 nm with an absorption intensity >20 cm^?1, bands at 2140 nm with intensity ～5 cm^?1, at 2038 nm with intensity ～2.7 cm^?1, and at 1564 nm with intensity ～0.4 cm^?1 were measured. These samples have shown a mass loss of 3–4 wt% by thermal gravimetric analyses under argon in the temperature range 400–1000 °C. No mass loss and only one broad OH-band with a maximum at 3150 nm and low absorption intensity <4 cm^?1 could be detected in samples melted at high temperature, 1000–1200 °C, which have much higher T_g, ～300 °C, and much higher chemical stability.     

Growth of YFeO3 crystal by edge-defined film-fed growth method

A sizeable single crystal of YFeO₃ (YIP) with the dimensions of 19×15×15 mm³ has been successfully grown by the edge-defined film-fed growth method. Thermal magnetic analysis shows that Curie temperature of as-grown YIP crystal is about 363.5 °C. The hardness of YIP crystal was measured as 900 VDH, equivalent to about 7.1 moh. Moreover, the optical transmittance of as-grown YIP crystal can be significantly enhanced if this crystal was annealed at 700 °C in oxygen atmosphere.     

Formation of Co2+-doped nanocrystals in La2O3–MgO–Al2O3–SiO2 glass-ceramics

Transparent glass-ceramics were synthesized by heat-treatment of glass with a composition of 5La₂O₃–13.2MgO–28.8Al₂O₃–46SiO₂–4.5TiO₂–2.5ZrO₂–0.15CoO (LMAS) (wt.%). The activation energy of crystallization and the Avrami parameter for the LMAS glass were determined from the DTA curves at different heating rates. The most two intense bands of Raman spectrum of initial glass at ~ 810 cm^?1 and ~ 900 cm^?1 were connected with the presence of [SiO₄] and [TiO₄] tetrahedral, respectively. After heat-treated at 700 °C/10 h+820 °C/8 h, the intensity of the band for [TiO₄] tetrahedral weakened, while an intensive band at ~ 800 cm^?1 for the Ti–O bond appeared. Other bands were characteristics of high-silicate network and x(MgTi₂O₅)·y(Al₂TiO₅) polycrystals. The changes reflected phase separation after heat-treatment of the initial glass. The strong absorption band of glass-ceramics centered at 580 nm can be assigned to ⁴A₂(⁴F)→⁴T₁(⁴P) and the broad absorption band at 1100–1700 nm to ⁴A₂(⁴F)→⁴T₁(⁴F) transitions of tetrahedral coordinated Co²⁺ ion. Two broad emission bands, one was around 660 nm, the other was from 800 nm to 1050 nm, of glass-ceramics correspond to the ⁴T₁(⁴P)→⁴A₂(⁴F) and ⁴T₁(⁴P)→⁴T₂(⁴F) transitions of tetrahedral coordinated Co²⁺ ions. The absorption and emission features clearly demonstrated that Co²⁺ ions were incorporated into nanocrystals and located in tetrahedral sites.     

Effect of vacuum annealing on charge transport and trapping in a-Si1 − xCx:H/c-Si heterostructures

The processes of charge transport and trapping in amorphous Si_1 ? xC_x:H films deposited on crystalline p-type Si wafers and annealed in vacuum in the temperature range 300–650 °C have been evaluated. Current–voltage (I–V), capacitance–voltage (C–V) and admittance–temperature (G–T) characteristics were measured in the temperature range 100–350 K. The spectrum of thermal effusion of hydrogen was measured from room temperature up to 1000 °C.C–V characteristics indicate a slight increase of the dielectric constant k and a large hysteresis after annealing at 450 °C. The hysteresis is believed to be associated with mobile hydrogen effusion from the a-SiC:H film, and it is not seen after a 650 °C anneal. From I–V data the maximum rectification ratio is observed after annealing at 450 °C. Variable-range hopping (VRH) conduction at the Fermi level is found to dominate the forward current of the as-deposited structure. After annealing at 450 °C the forward current can be described by space-charge limited (SCL) mechanisms with trapping at shallow levels with energy of about 0.12 eV. After annealing at 650 °C the process of VRH conduction appears again, but the density of hopping sites is much higher than in the as-grown sample. From admittance spectra, the energy position of respective traps in a-SiC:H is at (E_V + 0.45) eV for as-deposited material and it decreases slightly after vacuum annealing. On the basis of these results, an energy band diagram of the a-Si_1 ? xC_x:H/p-Si structure annealed at 450 °C is proposed.     

Effect of hydroxyl impurity on temperature coefficient of refractive index of synthetic silica glasses

We have studied the temperature coefficient of the refractive index of synthetic silica glasses with various hydroxyl impurities. The refractive index was measured at 15 °C and 35 °C at 1.707–0.238 μm wavelengths. The temperature coefficient of a low-OH group (110 wt. ppm) containing glass increased from 8.0 ± 0.2 × 10^?6/°C (at 1.707 μm) to 14.0 ± 0.2 × 10^?6/°C (at 0.238 μm), although it increased respectively from 7.0 ± 0.2/°C to 12.0 ± 0.2 × 10^?6/°C for a high-OH group (1300 wt. ppm) containing glass. The three-term Sellmeier equation, having two terms with resonance photon energies in the vacuum ultraviolet region and one term in the infrared region, was used to analyze the wavelength dispersion of the refractive index. Increasing temperatures shifted the resonance energy in the second term by ?4.14 ± 0.4 × 10^?4 eV/°C for low-OH (110 wt. ppm) glass and ?2.64 ± 0.4 × 10^?4 eV/°C for high-OH (1300 wt. ppm) glass. The fundamental absorption edge in the vacuum ultraviolet region shifted by ?8.8 ± 0.7 × 10^?4 eV/°C for the low-OH glass and ?6.3 ± 0.7 × 10^?4 eV/°C for the high-OH glass in a region of 25–100 °C. Both high-OH glass shift rates were lower than low-OH glass shift rates. The lower temperature coefficient for the Si–OH-related band probably explains the smaller temperature coefficient for high-OH glass: the absorption band of Si–O–H structure is located at lower energy side close to the fundamental absorption band associated with the Si–O–Si structure.     

Precise sound velocity measurement for liquid Se50Te50 under high pressure

We have measured the sound velocity in liquid Se₅₀Te₅₀ at 19.5, 32.6, 45.6, and 58.2 MHz simultaneously by means of an ultrasonic pulse transmission/echo method. By using a phase-sensitive-detection technique the relative error was reduced to less than 0.1%. The temperature dependence of sound velocity at 100 MPa exhibits a minimum at 600 ^oC and a maximum at 1035 ^oC, which are related to the large structural change accompanied by the semiconductor–metal (S–M) transition. In addition, sound dispersion has been observed at temperatures from 500 °C to 900 °C for the first time, where anomalous sound attenuation was previously reported. This result implies that a structural relaxation on nanosecond timescale takes place in the S–M transition region.     

Ag-doped antibacterial porous materials with slow release of silver ions

The inorganic–organic hybrids of polyethyleneglycol (PEG), tetraethoxysilane (TEOS) and triethylphosphate (TEP) doped by silver ions were prepared by sol–gel method. After molding and heating at 600 °C to remove organic components, porous Ag–P₂O₅–SiO₂ monoliths were obtained. Thermogravimetry (TG), differential thermal analysis (DTA), infrared spectra, ultraviolet–visible (UV–vis) spectra and pore structure of the samples were measured to show that organic components and residual water could be removed by a heat-treatment up to 600 °C and the mesopores with 6 nm pore diameter were formed. Specific surface area and pore volume of the samples were adjusted with different contents of TEP in the starting composition. Ag⁺ ions could be stably released into water at 30 °C up to 28 days. Antibacterial experiment showed that such materials treated at 600 °C could restrain Escherichia coli effectively.     

Structural investigations of nitrided Nb2O5 and Nb2O5–SiO2 sol–gel derived films

Sol–gel derived xNb₂O₅–(100 ? x)SiO₂ films (where x = 100, 80, 60, 50, 40, 20, 0 mol%) were nitrided at various temperatures (800 °C, 900 °C, 1000 °C, 1100 °C and 1200 °C). The structural transformations occurring in the films as a result of ammonolysis were studied using X-ray diffraction (XRD), atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). The XRD results have shown that the temperatures below 1100 °C were too low to obtain a pure NbN phase in the samples. The AFM observations indicate that the formation of the NbN phase and the size of NbN grains are related to the silica content in the layer. NbN grains become more regular and larger as the niobium content increases. The maximum grain size of about 100 nm was observed for x = 100. Preparation of the Nb₂O₅–SiO₂ sol–gel derived layers and the subsequent nitridation is a promising method of inducing crystalline NbN in amorphous matrices. It follows from the XPS results that a small amount of Nb₂O₅ remains in the films after nitridation at 1200 °C and that nitrogen reacted not only with Nb₂O₅ but also with SiO₂.