纳米磷化镓粉体还原氦过程的Raman光谱分析

利用Raman光谱对还原氮后的纳米磷化镓(GaP)粉体进行了表征。结果表明：纳米GaP粉体表面含有Ga-O，P-O和H-O化学键。此外，进行氮还原过程后，在Raman位移约为1700～3300cm^-1范围内(相当于709～800nm或1．55～1．75eV)，纳米GaP的Raman光谱出现了一个宽、强荧光发射峰；而在未进行通氮处理的纳米GaP Raman光谱中，没有观察到该荧光峰的存在。本文对该荧光发射峰的起因作了初步分析。     

纳米磷化镓粉体中混杂石墨和金刚石微晶的拉曼光谱分析

利用Raman光谱并结合能量色散X射线显微分析(EDX)和X射线衍射图谱(XRD)对混杂于纳米磷化镓粉体内的石墨和金刚石纳米微晶进行了分析。结果表明,在纳米GaP粉体Raman光谱中,位于1324 cm-1和1572 cm-1的两个宽强散射谱带分别归属于金刚石的F2g模和石墨的E2g模振动。EDX结果证实纳米GaP粉体材料中含有碳元素。XRD图谱中出现了石墨和金刚石的低晶面指数衍射峰。     

结晶紫在纳米磷化镓粉体表面吸附的表面增强拉曼光谱分析

利用Raman光谱对结晶紫(Crystal Violet,CV)在纳米磷化镓(GaP)粉体表面的吸附状态进行了分析.结果表明:与普通拉曼散射谱(Normal Raman Scattering,NRS)相比,结晶紫表面增强拉曼散射(Surface Enhanced Raman Scattering,SERS)谱的4种振动模式,即:中央键的呼吸振动、环-C -环面外弯曲振动、环C-H面外弯曲振动以及N-环伸缩振动,在纳米GaP粉体表面得到增强;通过分析吸附前后结晶紫拉曼散射峰相对强度的变化,确定了结晶紫在纳米GaP粉体表面的吸附取向,并对其表面增强散射机理进行了探讨.     

a-C:N:H纳米尖端荧光产生的机理

用CH4,H2和NH3为反应气体,利用等离子体增强热丝化学气相沉积在沉积有碳膜的Si衬底上制备了a-C:N:H纳米尖端,并用扫描电子显微镜和微区Raman光谱仪对碳膜和纳米尖端进行了表征。结果表明:Raman谱中含有与碳和氮相关的峰,且纳米尖端的Raman谱比碳膜的Raman谱有很强的荧光背景。Raman谱中的峰说明沉积的碳膜和纳米尖端是a-C:N:H薄膜和a-C:N:H尖端。a-C:N:H纳米尖端的Raman谱中强荧光背景的产生表明其在激发光源照射的过程中发射了强荧光,对a-C:N:H纳米尖端产生强荧光的机理进行了探讨。     

CdSe/CdS核壳纳米晶微波水热法一步合成与发光光谱分析

采用微波水热法一步合成了核壳结构的CdSe/CdS纳米晶,讨论了巯基丙酸中S^2-的释放过程对纳米晶生长的影响。XRD和Raman光谱结果表明,140℃合成温度下获得了CdSe/CdS核壳结构的纳米晶。FTIR光谱结果表明,巯基丙酸随时间的分解有助于CdS壳层的形成。PL光谱呈现出CdSe纳米晶的带间发射和缺陷发射,随着核壳结构的形成,CdSe纳米晶的表面缺陷被抑制,相关的荧光发射减弱。     

56Fe13+离子引起GaP晶体的微结构损伤

利用X射线衍射（XRD）技术、傅里叶变换红外光谱（FTIR）和Raman光谱对经不同剂量的56Fe13+离子辐照的GaP晶体的微结构进行了表征。结果表明:随着辐照离子剂量的增加,GaP晶体中产生了局部的无序与缺陷。随着56Fe13+离子剂量的增加,Raman光谱展示出振动峰强度逐渐减弱而且一些逐渐消失,但其峰位几乎没有发生变化;XRD显示出GaP晶体的衍射峰的强度逐渐减小;FTIR主要表现为宽化及其强度增加。这表明重离子56Fe13+的辐照使得GaP晶体中的缺陷与无序性增加,导致晶体产生了局部的非晶化。The Misconstructural damage of GaP irradiated with 56Fe13+ to fluences ranging from 1×107 ions/cm2~1×1010 ions/cm2 were analyzed by X-ray diffraction (XRD) techniques, Fourier transform infrared spectroscopy (FTIR) and Raman spectroscopy. The result shows that, with the increase of irradiation ion fluences, local disorder and defects were produced in GaP crystal. With the increase of ion fluence, Raman spectra reveal the intensity of scattering peaks gradually weakens and some scattering peaks gradually disappear, however no changes in the peak position were found. XRD measurement displays that the intensity of diffraction peaks gradually decreases with an increase in ions fluences. Result from FTIR spectra exhibits that the intensity of reflection peaks gradually increases and the FWHM of reflection peaks broadens. These phenomena indicate that, the irradiation of heavy-ion Fe produces defects and disorder in GaP crystal, leading to a local amorphization.     

炸药爆轰法制备的纳米石墨粉的拉曼光谱

负氧平衡炸药爆轰法合成的纳米石墨粉,是一种新型的具有良好实用前景的纳米粉体材料。采用负氧平衡炸药梯恩梯(TNT),在分别充有氮气、氩气、二氧化碳等保护性气体、压力为0.25～2 atm的密闭容器内爆轰制备了纳米石墨粉。用激光拉曼光谱对制备的样品进行了测试,结果表明样品为石墨结构。纳米石墨粉的Raman峰与块体石墨相比,其峰位向高波数方向偏移了约5 cm-1。纳米石墨粉Raman峰的半高宽约为22 cm-1,由此可计算出纳米石墨粉的颗粒大小为2.97～3.97 nm。与高纯石墨Raman峰相比,纳米石墨粉的Raman峰由于尺寸效应出现了蓝移现象, 并对此现象进行了讨论。用X射线衍射仪(XRD)和透射电子显微镜(TEM)测定了纳米石墨粉的物相,并对其颗粒粒径进行了估算,其结果为2.58 nm(酸处理前)和1.86 nm(酸处理后),与Raman光谱的结果基本吻合。     

纳米GaP材料Ga填隙缺陷的EPR实验观察

利用电子顺磁共振(EPR)技术对纳米GaP粉体材料的本征点缺陷进行了研究，结果表明：由EPR信息的g因子值（2.0027±0.0004）可以确定纳米GaP粉体材料存在Ga自填隙（Ga_i）本征缺陷；纳米GaP粉体EPR信号超精细结构消失，以及谱线线宽（ΔH_PP）变窄等实验现象，可能是由纳米材料界面的无序性，以及缺陷原子和界面原子之间的电子交换造成的；在较低的测试温度范围内，升高温度引起纳米GaP材料发生晶界结构弛豫；当测试温度由100 K升高至423 K时，ΔH_PP值和自由基浓度皆逐渐降低.     

掺铋离子BaO-B203玻璃的制备及其近红外发光性能的研究

采用高温熔融法制备了掺Bi离子的BaO—B203玻璃,测定了样品玻璃的近红外以及可见光区的激发、发射谱、荧光衰减曲线以及Raman光谱．在808nm波长光的激发下,在掺Bi离子的BaO—B203玻璃中发现了近红外发光现象．且存在多个发光峰．讨论了玻璃网络结构对Bi离子发光的影响,对其发光机理进行了初步的探讨．     

纳米GaP粉体反射光谱的测量及其分析

通过测量纳米磷化镓(GaP)粉体在紫外可见光波段(200-800nm)的反射光谱,运用三流理论由反射光谱计算出纳米GaP粉体的吸收系数(Ea)和散射系数(Es)的比值(Ea/Es)。纳米GaP粉体的反射光谱的形状主要受吸收的影响,即GaP禁带结构的影响。     

吸附于纳米磷化镓粉体表面碱性品红的拉曼光谱(英文)

本文中,对吸附于纳米磷化镓(GaP)粉体表面的碱性品红拉曼光谱进行了研究。通过将吸附碱性品红与纯碱性品红晶体样品的拉曼光谱进行对比、分析可知,碱性品红在纳米GaP粉体表面发生了化学吸附。在吸附碱性品红样品的拉曼光谱中,位于1200~1320cm-1范围内的光谱特征表明可能有新的化学键(P-O-C+或Ga-O-C+)形成。碱性品红分子的中央碳正离子(C+)与GaP表面具有孤对电子的氧原子形成配位键。红外光谱结果表明,氧原子与纳米GaP粉体表面的磷原子或镓原子键合,以P-O,Ga-O或P-O-Ga形式存在于GaP表面。碱性品红分子的呼吸振动,N-苯环伸缩振动,以及苯环C-C伸缩振动散射强度与纯碱性品红晶体样品相比皆有所增强。N-苯环伸缩振动散射强度增加意味着N原子是除C+离子以外的另一个可以与GaP表面发生化学作用的活性中心,这种化学作用是由N原子与GaP表面存在共轭效应造成的。     

Raman scattering from surface optical phonon mode in gallium phosphide nanomaterials

The Raman scattering from gallium phosphide (GaP) nanoparticles (~53 nm) and nanosolids has been investigated. By means of Lorentzian fitting of the Raman scattering spectra, a surface optical phonon (SO) peak located between the transverse optical (TO) phonon and longitudinal optical (LO) phonon frequencies became observable. It has been proved by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) that a core-shell heterostructure is characteristic of the structure of GaP nanoparticles. According to electromagnetic theory, the SO frequency of the piezoelectric/semiconductor heterostructural nanomaterials was calculated.     

Raman scattering from GaP nanowires

A complete Raman study of GaP nanowires is presented. By comparison with the Raman spectra of GaP bulk material, microcrystals and nanoparticles, we give evidence that the Raman spectrum is affected by the one-dimensional shape of the nanowires. The Raman spectrum is sensitive to the polarization of the laser light. A specific shape of the overtones located between 600 and 800 cm^-1 is actually a signature of the nanowires. Some phonon confinement and thermal behavior is also observed for nanowires.     

纳米GaP粉体对结晶紫的光催化降解及其振动光谱分析

对纳米 Ga P粉体 -结晶紫水溶液光催化降解进行了研究。纳米 Ga P粉体在紫外光照射条件下对结晶紫具有光催化降解作用 ;随平均颗粒度的降低 ,纳米 Ga P粉体的光催化活性增加。红外光谱测试结果表明 :进行光催化过程以后 ,纳米 Ga P表面存在的几种主要振动模式变化较小或不变 ;拉曼光谱测试结果表明 :纳米 Ga P粉体的横向光学声子模与纵向光学声子模 ,以及表面主要振动模式几乎没有发生变化     

Amorphous-like Raman spectra of GaP microcrystals

Raman scattering from gas-evaporated GaP microcrystals smaller than about 400 Å has been investigated. As the crystalline size decreases from ～400 to ～170 Å, drastic changes in the Raman spectrum are observed; the TO and surface phonon peaks broaden and shift, and they strongly overlap with each other, finally transforming into a broad structure; broad bands located at around 80 and 200 cm^-1 appear and grow rapidly. The microcrystals smaller than about 250 Å show spectra very similar to those of amorphous GaP, even though the electron diffraction patterns prove that they are crystalline. The amorphous-like Raman signals seem to come from the surface layers of the microcrystals.     

Laser-induced synthesis of silver nanoparticles and their conjugation with protein

Partially oxidized spherical silver nanoparticles (AgNPs) of different size are prepared by pulsed laser ablation in water and directly conjugated to protein S-ovalbumin for the first time and characterized by various optical techniques. UV–Visible spectrum of AgNPs showed localized surface plasmon resonance (LSPR) peak at 396 nm which red shift after protein addition. Further the increased concentration of AgNPs resulted a decrease in intensity and broadening of S-ovalbumin peak (278 nm), which can be related to the formation of protein NPs complex caused by the partial adsorption of S-ovalbumin on the surface of AgNPs. The red shift in LSPR peak of AgNPs after mixing with S-ovalbumin and decrease in protein-characteristic peak with increased silver loading confirmed the formation of protein–AgNPs bioconjugates. The effect of laser fluence on the size of AgNPs and nanoparticle–protein conjugation in the size range 5–38 nm is systematically studied. Raman spectra reveal broken disulphide bonds in the conjugated protein and formation of Ag–S bonds on the nanoparticle surface. Fluorescence spectroscopy showed quenching in fluorescence emission intensity of tryptophan residue of S-ovalbumin due to energy transfer from tryptophan moieties of albumin to AgNPs. Besides this, small blue shift in emission peak is also noticed in presence of AgNPs, which might be due to complex formation between protein and nanoparticles. The binding constant (K) and the number of binding sites (n) between AgNPs and S-ovalbumin have been found to be 0.006 M^?1 and 7.11, respectively.     

Ellipsometric analysis and optical absorption characterization of gallium phosphide nanoparticulate thin film

Gallium phosphide (GaP) nanoparticulate thin films were easily fabricated by colloidal suspension deposition via GaP nanoparticles dispersed in N,N-dimethylformamide. The microstructure of the film was performed by x-ray diffraction, high resolution transmission electron microscopy and field emission scanning electron microscopy. The film was further investigated by spectroscopic ellipsometry. After the model GaP+void|SiO₂ was built and an effective medium approximation was adopted, the values of the refractive index n and the extinction coefficient k were calculated for the energy range of 0.75 eV-4.0 eV using the dispersion formula in DeltaPsi2 software. The absorption coefficient of the film was calculated from its k and its energy gaps were further estimated according to the Tauc equation, which were further verified by its fluorescence spectrum measurement. The structure and optical absorption properties of the nanoparticulate films are promising for their potential applications in hybrid solar cells.     

Surface mode absorption and infrared optical properties of gallium phosphide nanoparticles

The surface optical (SO) mode of ellipsoidal gallium phosphide (GaP) nanoparticles is investigated by infrared transmission spectroscopy. The surface mode theory of diatomic cubic particles is generalized and applied to GaP nanoparticles in a systematic treatment. The Fröhlich mode of GaP nanoparticles has been observed in our experiment. As far as surface mode frequency is concerned, the result of the experiment agrees with that of the theoretical calculation. The characteristics of the SO mode peak, including frequency shift, broadening and line shape, are analyzed. The frequency shift is attributed to the surrounding medium effect, surface oxidation and the aggregation effect as well as intrinsic point defects; the broadening is mainly due to the non-spherical particle shape, aggregation and quantum confinement effect; and the line shape is related to the particle shape and the damping function.     

Some optical properties of (ZnS)−(GaP) alloys and their interpretation

Optical measurements on the single crystals of the pseudobinary (ZnS)?(GaP) alloy were carried out. The band gap energy decreased more rapidly with increase in GaP concentration than that reported previously. The analysis of the absorption spectra for the crystals of up to 70 mole % GaP indicated a direct transition characteristic, and that the band gap becomes nearly equal to that of pure GaP at about 30 mole % GaP. The photoluminescence spectra observed at liquid nitrogen temperature could first be resolved into three kinds of emission band with Gaussian distribution. The peak energy of these bands were found to be independent of the band gap variation. Thus the observed peak energy shift with alloy composition was attributed to the variation of the emission intensity of each band. The band gap shrinkage and the origin of the photoluminescence spectra on the basis of a molecular orbital method were discussed.