硼烯纳米带能带结构和态密度的第一性原理研究

基于密度泛函理论,采用第一性原理的方法计算H修饰边缘不同宽度硼稀纳米带的电荷密度、电子能带结构、总态密度和分波态密度。结果表明,硼烯纳米带的宽度大小影响着材料的导电性能,宽度5的硼烯纳米带是间接带隙简并半导体,带隙值为0.674 eV,而宽度7的硼烯纳米带却具有金属材料的性质。分波态密度表明,宽度5的硼烯纳米带的费米能级附近主要是由B-2s、2p电子态贡献,H-1s主要贡献于下价带且具有局域性,消除了材料边缘的不稳定性。宽度7的B-2p和H-1s电子态贡献的导带和价带处于主导地位,费米能级附近B-2p和H-1s电子态的杂化效应影响材料的整体发光性能。     

锯齿型石墨烯纳米带的能带研究

运用π电子紧束缚模型,具体研究了锯齿型石墨烯纳米带(ZGNRs)的边界结构对能带,特别是费米面附近的导带和价带电子的影响.计算了七种不同边界结构的ZGNRs的能带色散关系及费米面附近价带电子在原胞中各原子上的分布情况.计算结果表明:两边界都无悬挂原子的NN-ZGNRs,只有一边界有悬挂原子的DN-ZGNRs,两边界都有五边形环的SPP-ZGNRs和ASPP-ZGNRs为金属性.两边界都有悬挂原子的DD-ZGNRs,一边界为五边形环另一边界无悬挂原子的PN-ZGNRs和一边界为五边形环另一边界有悬挂原子的P 关键词： 锯齿型石墨烯纳米带 紧束缚模型 电子密度分布 缺陷结构     

氢修饰石墨烯纳米带压电性质的第一性原理研究

采用第一性原理计算方法, 系统研究了不同宽度、不同边缘修饰模式的间隔氢吸附锯齿型石墨烯纳米带的压电性质. 结构优化和结合能计算表明, 氢修饰石墨烯纳米带结构稳定. 氢原子间隔排列的吸附使得纳米带中的相邻碳原子成键及电荷状态不同, 导致拉伸时纳米带中六元碳环的正负电荷中心不再重合, 产生宏观电极化. 纳米带宽度越宽, 包含六元碳环数目越多, 则拉伸时纳米带长度方向上电偶极矩密度越大, 其压电性能越强. 另外, 边缘原子电荷状态决定了无拉伸时纳米带的初始电偶极矩密度, 其大小可以通过改变边缘氢原子的修饰模式来有效调控. 关键词： 石墨烯纳米带 第一性原理 修饰改性 压电性质     

边缘修饰的石墨烯纳米带电子特性的第一性原理研究

本文采用第一性原理计算方法,研究了zigzag型石墨烯纳米带在边缘采用不同基团（包括氢原子、羟基、酮基、氢和羟基共同饱和）进行修饰后电子特性的改变,计算了能带结构、态密度和电荷差分密度。结果分析表明,不同基团修饰的影响本质上可归结于不同的边缘杂化方式。边缘sp2杂化方式对GNRs体系内层原子的电子状态影响很小,没有改变zigzag-GNRs的金属性;而边缘sp3杂化的体系在能带结构中打开了一个带隙,此带隙随纳米带宽度的增加而逐渐减小。其中GNRs-H2 体系和GNRs-H2O体系发生了由金属性向半导体性的转变,而GNRs-O体系费米能级升高并且进入了导带,依然呈现金属性。利用这种边缘修饰非常易于调控GNRs的电子能带结构。     

边缘修饰的石墨烯纳米带电子特性的第一性原理研究

本文采用第一性原理计算方法,研究了zigzag型石墨烯纳米带在边缘采用不同基团（包括氢原子、羟基、酮基、氢和羟基共同饱和）进行修饰后电子特性的改变,计算了能带结构、态密度和电荷差分密度。结果分析表明,不同基团修饰的影响本质上可归结于不同的边缘杂化方式。边缘sp2杂化方式对GNRs体系内层原子的电子状态影响很小,没有改变zigzag-GNRs的金属性;而边缘sp3杂化的体系在能带结构中打开了一个带隙,此带隙随纳米带宽度的增加而逐渐减小。其中GNRs-H2 体系和GNRs-H2O体系发生了由金属性向半导体性的转变,而GNRs-O体系费米能级升高并且进入了导带,依然呈现金属性。利用这种边缘修饰非常易于调控GNRs的电子能带结构。     

石墨烯纳米带能带结构及透射特性的扭曲效应

利用基于密度泛函理论的第一性原理方法, 系统研究了石墨烯纳米带(GNRs)电学性质的扭曲效应. 结果表明: 锯齿型石墨纳米带(ZGNRs)的带隙对扭曲形变最不敏感, 在扭曲过程中几乎保持金属性不变, 其次是W=3p-1型扶手椅型石墨烯纳米带(AGNRs), 扭曲时带隙也只有较小的变化. W=3p+1型AGNRs的带隙对扭曲最为敏感, 扭曲发生时, 呈现宽带隙半导体、中等带隙半导体、准金属、金属的变化, 其次是W=3p型AGNRs, 扭曲时带隙变化也较为明显. 换言之, GNRs在无扭曲时带隙越大, 扭曲发生后带隙变化(变小)越明显. 对于整个电子结构及透射系数来说, 扭曲对AGNRs影响较大, 而对ZGNRs的影响相对小些. 研究表明: 由于石墨烯容易变形, 其相关电子器件的设计必须适当考虑扭曲对电学性质的影响.     

石墨烯纳米网电导特性的能带机理：第一原理计算

通过第一原理电子结构计算来研究有序多孔纳米网的电导特性变化的能带机理.能带结构分析结果表明:石墨烯纳米网超晶格(3m,3n)(m和n为整数)的电子本征态在布里渊区中心点发生四重简并;碳空位孔洞规则排列形成的石墨烯纳米网具有由简并态分裂形成的宽度可调带隙,无论石墨烯的两个子晶格是否对等.在具有磁性网孔阵列的石墨烯纳米网中,反铁磁耦合使对称子晶格的反演对称性增加了一项量子限制条件,导致能带结构在K点的二重简并态分裂成带隙.通过控制网孔密度能够有效调节石墨烯纳米网的带隙宽度,为实现新一代石墨烯纳米电子器件提供了理论依据.     

氧化石墨烯的结构稳定性及硝酸催化作用的第一性原理研究

利用第一性原理方法,采用超软赝势库系统研究了硝酸熏蒸石墨烯得到的氧化石墨烯结构的稳定性及电子结构.基于石墨烯正交元胞的2×2超胞模型建立相应的正交晶系硝酸熏蒸氧化石墨烯模型,包含15个碳原子和2个氧原子.结果表明熏蒸后包含碳氧双键的氧化石墨烯结构为能量较低的稳定结构,与实验报道一致.力学稳定性分析表明该结构的C_(66) 0, C_(11) 0, C_(11)C_(22) C_(12)~2,处于力学稳定状态.通过分析熏蒸前后的反应物和生成物,表明硝酸起催化作用;且硝酸氧化石墨烯为吸热过程,反应发生需要外界热源.通过分析结构的电子特性,得出氧化石墨烯为直接带隙本征半导体,带隙值为1.12 eV,功函数为5.28 eV.研究结果为硝酸氧化石墨烯的制备及其在光电子器件领域的应用提供了理论依据.     

石墨烯纳米片电子结构和量子输运特性第一原理研究

用基于密度泛函理论的原子紧束缚方法计算研究单层石墨烯纳米圆片和纳米带的电子结构,并结合第一原理和非平衡函数法计算量子输运特性.通过电子能态和轨道密度分布研究纳米碳原子层的电子成键状态,结合电子透射谱、电导和电子势分布分析电子散射与输运机制.石墨烯纳米带和纳米圆片分别呈现金属和半导体的能带特征,片层边缘上电极化分别沿垂直和切向方向,电子电导出现较大的差异,来源于石墨烯纳米圆片边缘的突出碳原子环对电子的强散射.石墨烯纳米带的电子透射谱表现为近似台阶式变化并在费米能级处存在弹道电导峰,而石墨烯纳米圆片的电子能带和透射谱在费米能级处开口并且因量子限制作用呈现更加离散的多条高态密度窄能带和尖锐谱峰.     

石墨烯层间纳米摩擦性质的第一性原理研究

基于密度泛函理论的第一性原理计算方法研究了纳米尺度下石墨烯层间摩擦现象, 探讨了对称和非对称两种情况下双层石墨烯层间沿不同方向的摩擦性质. 研究发现对于对称的双层石墨烯, 层间摩擦沿不同方向同性; 摩擦因数依赖于正压力, 随正压力增大, 摩擦因数的变化曲线分为三个阶段, 在较小以及较大压力下, 摩擦因数遵循Amonton法则不随压力变化而变化; 而在中间3-6 nN阶段, 摩擦因数随压力增加线性增加. 整个研究压力范围内摩擦因数在0.05-0.25之间. 对于非对称性双层石墨烯层间摩擦, 不同压力下摩擦因数在0.006上下波动, 摩擦因数较两层对称性石墨烯大大降低. 上述研究结果与实验一致.     

First Principle Calculations of Quasiparticle Energies for Band Structures of Semiconductors

We successfully applied the Green function theory in GW approximation to calculate the quasiparticle energies for semiconductors Si and GaAs. Ab initio pseudopotential method was adopted to generate basis wavefunctions and charge densities for calculating dielectric matrix elements and electron self-energies. To evaluate dynamical effects of screened interaction, GPP model was utilized to'extend dieletric matrix elements from static results to finite frequencies. We give a full account of the theoretical background and the technical details for the first principle pseudopotential calculations of quasiparticle energies in semiconductors and insulators. Careful analyses are given for the effective and accurate evaluations of dielectric matrix elements and quasiparticle self-energies by using the symmetry properties of basis wavefunctions and eigenenergies. Good agreements between the calculated excitation energies and fundamental energy gaps and the experimental band structures were achieved.     

Effect of Uniaxial Strain on Band Gap of Armchair-Edge Graphene Nanoribbons

Based on the tight-binding approximation, analytical solutions of the energy dispersion and band gap of armchair-edge graphene nanoribbons （AGNRs） under uniaxial strains are derived. Subsequent numerical results on band gap are found to be consistent with the analytical solutions. It is shown that the energy gap of AGNRs is sensitive to the uniaxial strains and is predicted to change with a V shape as a function of the applied uniaxial strain. It is interesting to find that the uniaxial strain could induce metal-semiconductor transition for the AGNRs with a width of n=3m＋2 （（3m ＋ 2）-AGNRs） and semiconductor-metal-semiconductor phase transition for the （3m ＋ 1）-AGNRs, but no phase transition is induced for the 3m-AGNRs.     

The Structure of Electronic States in FeSb2 According to Optical Spectroscopy and Band Calculations

Physics of the Solid State - The electronic structure and optical properties of a binary intermetallic FeSb2 compound are studied. The calculations of the band structure, that demonstrate the...     

Structure Dependence of Excitonic Effects in Chiral Graphene Nanoribbons

We explore the excitonic effects in chiral graphene nanoribbons(cGNRs), whose edges are composed alternatively of armchair-edged and zigzag-edged segments. For cGNRs dominated by armchair edges, their energy gaps and exciton energies decrease with increasing chirality angles, and they, as functions of widths, oscillate with the period of three, while the exciton binding energies do not have such distinct oscillation. On the other hand,for cGNRs dominated by zigzag edges, all the energy gaps, exciton energies, and exciton binding energies show oscillation properties with their widths, due to the interactions between the edge states localized at the opposite zigzag edges. In addition, the triplet excitons are energy degenerate when the electrons are spin-unpolarized,while the degeneracy split when the electrons are spin-polarized. All the studied cGNRs show strong excitonic effects with the exciton binding energies of hundreds of meV.     

Electronic Structure of the DyFe2Si2 Compound: Energy Band Calculations and Optical Studies

Physics of the Solid State - The electronic structure and the optical properties of the DyFe2Si2 compound have been studied. The calculations of the energy band spectrum taking into account the...     

Density of States for Random Band Matrices

 By applying the supersymmetric approach we rigorously prove smoothness of the averaged density of states for a three dimensional random band matrix ensemble, in the limit of infinite volume and fixed band width. We also prove that the resulting expression for the density of states coincides with the Wigner semicircle with a precision 1/W ² , for W large but fixed. Received: 6 February 2002 / Accepted: 17 July 2002 Published online: 7 November 2002 RID="*" ID="*" Supported by NSF grant DMS 9729992     

Band Structures of Metal-Oxide Capped Graphene： A First Principles Study

We perform a first-principles calculation based on density functional theory to investigate the interface between single layer graphene and metal oxides. Our study reveals that the monolayer graphene becomes semiconducting by single crystal SiO2 and Al2O3 contact, with energy gaps to - 0.9 and - 1.8 eV, respectively. We find the gap originates from the breakage of π bond integrity, whose extent is related to the interface atom configuration. We believe that our results highlight a promising direction for the feasibility to apply large scale graphene layers as building blocks in future electronics devices.