Electronic states near the band gap for the GaAs(110) surface

The recent theoretical controversy regarding empty surface states at the GaAs cleavage plane is examined by the exact solution of several tight binding models applied to a semi-infinite crystal. We correlate the existence of an empty surface gap state with the anion p/cation p character of this state. This work isolates the specific properties of a Hamiltonian for GaAs which yield band gap states on a relaxed surface and clarifies the essential differences among current theoretical treatments.     

Surface states on GaAs(110)

The electronic structure of the (110) surface of GaAs is recalculated using the relaxation geometry recently obtained from analyzing elastic low-energy electron diffraction intensity data and a self-consistent ab initio pseudopotential approach. Better agreement is found for the occupied surface states compared with photoemission data, giving support for the new structural model. The influence of convergence of the plane-wave expansion and relativistic effects on the surface states is also examined.     

Optical detection of surface states in GaAs(110) and GaP(110)

We present results on the optical detection of surface states in GaAs(110)and GaP(110)by the method of the fractional change of external reflectivity. Optical transitions are observed at ～3.1 eV m GaAs(110) and ～3.4 eV in GaP. A comparison with existing theories suggests a rotational relaxation model for the surface, with partial relaxation for GaAs(110) and full relaxation for GaP(110).     

Surface states of GaAs (110): Pseudopotential calculations

In this letter we present calculations for surface states in high symmetry points Γ, M, X and X' of Jones' zone of GaAs (110), using a step barrier potential. It is found that only four surface states appear in the thermal gap; two in Γ point at 0.38 and 1.2 eV from the top of the valence band considered as origin of energies, one at 0.8 eV in M point and another in X′ point at 0.3 eV. Also, we obtain a low band of surface states between ?3 and ?5.5 eV.     

Photoemission via bloch states and evanescent band gap states for Cu(110)

Normal emission photoelectron spectra from Cu(110) using polarized synchrotron radiation (hv < 35 eV) can be explained with a direct transition model using realistic final state bands. Prominent surface photoemission via evanescent final states is observed in the large X′₅-X₁ conduction band gap. Accurate valence band eigenvalues at K and X have been determined.     

Surface states on unrelaxed GaAs (110) in the bond-orbital model

We have used the bond-orbital model of Pantelides and Harrison to compute eigenstates for a twelve layer slab of GaAs (110). Dispersion for each of the states is presented as a function of surface wave vector. Also, probability distributions for electrons in each of the surface states are given. These results are in good agreement with those of Joannopoulos and Cohen who did not make the bond-orbital approximation, thus helping to establish the usefulness of this method for surface calculations.     

Surface states and metal overlayers on the (110) surface of GaAs

We have found new surface states related to Al overlayers on the (110) surface of GaAs. These states play a prominent role in the determination of the electronic structure for metal-semiconductor interfaces. The results are consistent with conjectures of Rowe, Christman and Margaritondo based upon recent experimental results for metal overlayers on semiconductor surfaces.     

Probing semiconductor gap states with resonant tunneling

Tunneling transport through the depletion layer under a GaAs {110} surface is studied with a low temperature scanning tunneling microscope (STM). The observed negative differential conductivity is due to a resonant enhancement of the tunneling probability through the depletion layer mediated by individual shallow acceptors. The STM experiment probes, for appropriate bias voltages, evanescent states in the GaAs band gap. Energetically and spatially resolved spectra show that the pronounced anisotropic contrast pattern of shallow acceptors occurs exclusively for this specific transport channel. Our findings suggest that the complex band structure causes the observed anisotropies connected with the zinc blende symmetry.     

Surface states at the clean surfaces of cleaved Si(111) and GaAs(110)

A combination of ellipsometric data on the electronic transitions from occupied to unoccupied surface states and published photoemission data on the energy distribution of the occupied surface states has been used to construct models of the surface states densities at the cleaved Si (111) and GaAs (110) surfaces.     

Application of high energy ion channeling to GaAs(110), Au-GaAs(110) and Pd-GaAs(110)

The first application of high energy ion channeling to the atomically clean GaAs(110) surface and metal-GaAs interfaces is reported. Questions of sample preparation, background correction and computer simulation are addressed. It is found that the Ga and As atoms at the clean surface are laterally displaced ? 0.1 Å from the ideal bulk-like sites. The implications of this result to current LEED models are discussed. Au overlayers, deposited at room temperature, do not seem to produce lateral displacements of the substrate for coverages below ≈ 5 monolayer (ML). However, ≈ 0.9 ML of the substrate are expanded or contracted upon Au deposition; this process is completed at a coverage of 0.5 ML. Neither an indication of any order in the Au film is found, nor seems a significant (? 5%) fraction of Au atoms to occupy substitutional sites. In contrast, room-temperature deposition of Pd disorders the substrate substantially, without threshold coverage, even at very small film thicknesses.     

Surface phonons in GaAs(110)

Surface phonon dispersion curves have been measured along the <001>, <11&#x0304;2>, and <11&#x0304;0> azimuths of GaAs(110). Features of note include a very low frequency (5.5 meV at zone boundary) surface acoustic mode in the first two directions; this may arise through the known (1 × 1) reconstruction of this surface. A higher frequency surface mode (7.3–8.8 meV, depending on azimuth) is seen in all directions. The helium scattering intensities are greatly influenced by bound state resonances. A careful survey of the selective adsorption signatures in extremely high resolution scans of polar angle, azimuthal angle, and incident beam wavevector allows the bound state energies to be determined with some confidence. Initial results indicate energies of roughly 1, 2, and 4 meV.