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1.
H. Lefèvre 《Applied Physics A: Materials Science & Processing》1980,22(1):15-22
Deep-level profiles were measured radially acrossn-type FZ silicon wafers containing A-swirl defects by applying DLTS to an array of Schottky contacts. The trapparameters were
obtained very accurately using a computer-fit procedure for the full DLTS peaks. Two acceptor levels atE
c
−0.49 eV (σ
n
=6.6×10−16cm2) andE
c
−0.07 eV (σ
n
=4.6×10−16cm2) were observed, which varied oppositely to the A-swirl defect density. At short ranges (1–2mm) the trap concentration-profile
was smeared out and did not follow the strong fluctuations in the etch pattern. Both levels were measured together with the
same concentration. The profiles indicate outdiffusion. A level atE
c
−0.14 eV (σ
n
=1.1×10−16cm2) was not related to A-swirl defects. A level atE
c
−0.11 eV (σ
n
=1.1×10−15cm2) was only detected in one ingot.
The properties of the deep level atE
c
−0.49 eV are discussed in the light of published DLTS results reported for γ-irradiation, laser annealing after self-implantation,
annealing under pressure and oxidation of silicon samples. It is concluded, that this level is related to interstitial silicon
rather than to an impurity. 相似文献
2.
Small-angle neutron scattering experiments and molecular dynamics simulations combined with an application of concepts from soft matter physics to complex protein mixtures provide new insight into the stability of eye lens protein mixtures. Exploring this colloid-protein analogy we demonstrate that weak attractions between unlike proteins help to maintain lens transparency in an extremely sensitive and nonmonotonic manner. These results not only represent an important step towards a better understanding of protein condensation diseases such as cataract formation, but provide general guidelines for tuning the stability of colloid mixtures, a topic relevant for soft matter physics and industrial applications. 相似文献
3.
V. V. Voronkov G. I. Voronkova A. V. Batunina V. N. Golovina M. G. Mil’vidskii A. S. Gulyaeva N. B. Tyurina L. V. Arapkina 《Physics of the Solid State》2000,42(11):2022-2029
The generation of low-temperature thermal donors (TD) in silicon is sensitive to the sample cooling rate (from the anneal to room temperature) and the ambient (air or vacuum). This effect is most clearly pronounced in the case of annealing at 500°C, is noticeable at 480°C, and is practically undetectable at 450°C. The results are interpreted satisfactorily as being due to the TD generation becoming enhanced in the presence of silicon self-interstitial (SiI) atoms. These atoms are emitted by thermal donors, to be subsequently absorbed by sinks, particularly the sample surface and grown-in microdefects (vacancy voids). When annealing in a vacuum, the surface acts as the main sink. If the anneal is done in air, this sink is passivated as a result of oxidation and/or contamination, with voids becoming the main sinks; as a result, the concentration of SiI atoms increases substantially and the generation rate is enhanced. Rapid cooling brings about a partial passivation of the voids (as a result of their becoming decorated by rapidly diffusing impurities) and an additional enhancement of the generation rate. The calculated rate curves obtained within this model are well fitted to the experiment. 相似文献
4.
5.
Co-deposition technique by means of simultaneous ion beam sputtering of nickel and silicon onto SiC was performed for tailoring of Ni-silicide/SiC contacts. The prepared samples were analysed by means of XRD and XPS in order to obtain information about the surface and interface chemistry. Depth profiling was used in order to analyse in-depth information and chemical distribution of the specimens. XRD results showed that the main phase formed is Ni2Si. The XPS analysis confirmed the formation of the silicide on the surface and showed details about the chemical composition of the layer and layer/substrate interface. Moreover, the XPS depth profiles with detailed analysis of XPS peaks suggested that tailoring of C distribution could be monitored by the co-deposition technique employed. 相似文献
6.
L.F. Makarenko M. Moll J.H. Evans-Freeman S.B. Lastovski L.I. Murin F.P. Korshunov 《Physica B: Condensed Matter》2012,407(15):3016-3019
New findings on the self-interstitial migration in p-type silicon are presented. They are based on experimental studies of the formation kinetics of defects related to interstitial carbon after irradiation with alpha particles. The main parameters characterizing the interaction rate of silicon self-interstitials with substitutional carbon atoms have been determined. A preliminary interpretation of the experimental data is given. The interpretation takes into account different diffusivities of self-interstitials in their singly and doubly ionized states. 相似文献
7.
T. S. Kamilov D. K. Kabilov I. S. Samiev Kh. Kh. Khusnutdinova R. A. Muminov V. V. Klechkovskaya 《Technical Physics》2005,50(8):1102-1104
The formation of higher manganese silicide (HMS) films on silicon and the properties of the silicide-silicon interface are
studied. Morphology analysis of the surface and thin transition layer at the HMS-Si interface suggests that the growth of
HMS films by the method of Mn reactive diffusion follows the vapor-liquid-crystal mechanism. 相似文献
8.
The paper re-examines the effect of oxidation on the diffusion of phosphorus and boron in silicon as well as recent results
on redistribution phenomena of these dopants under irradiation and on the emitter-push effect. It is shown that at high temperatures
phosphorus and boron diffuse via a defect mechanism involving silicon self-interstitials. These results support the view-point
that self-interstitials are the dominating point defects in silicon under thermal equilibrium conditions. Possible generation
mechanisms for the self-interstitial supersaturation causing the emitter-push effect are suggested. 相似文献
9.
10.
11.
12.
A. S. Orekhov T. S. Kamilov A. G. Gaibov K. I. Vakhabov V. V. Klechkovskaya 《Technical Physics》2010,55(6):874-876
The growth of manganese silicide films on silicon under the conditions of equilibrium and non-equilibrium diffusion doping
of the silicon from the vapor phase is studied for different weight percent of the dopant. 相似文献
13.
The fabrications of size-tunable periodic arrays of nickel metal and silicide nanodots on (0 0 1)Si substrates using polystyrene (PS) nanosphere lithography (NSL) and heat treatments have been investigated. The growth of epitaxial NiSi2 was found to be more favorable for the Ni metal nanodot arrays. The effect becomes more pronounced with a decrease in the size of the Ni nanodots. The sizes of the epitaxial NiSi2 nanodots were tuned from 38 to 110 nm by varying the diameter of the PS spheres and heat treatment conditions. These epitaxial NiSi2 nanodots formed on (0 0 1)Si were found to be heavily faceted and the faceted structures were more prone to form at higher temperatures. Based on TEM, HRTEM and SAED analysis, the faceted NiSi2 nanodots were identified to be inverse pyramids in shape. Compared with the NiSi2 nanodot arrays formed using single-layer PS sphere masks, the epitaxial NiSi2 nanodot arrays formed from the double-layer PS sphere templates exhibit larger interparticle spacings and smaller particle sizes. Since the nanoparticle sizes, shapes and interparticle spacings can be adjusted by tuning the diameter of the PS spheres, stacking conditions, and heat treatment conditions, the PS NSL technique promises to be an effective patterning method for growth of other nanostructures. 相似文献
14.
Process temperature and thermal budget control are very important for high-k dielectric device manufacturing. This work focuses on the characteristics of low temperature activated nickel silicide/silicon (M/S) interface formed by implant into silicide (IIS) method. By combining SIMS, C-V, I-V, and AFM measurements in this work, it provides a clear picture that the high dopant activation ratio can be achieved at low temperature (below 600 °C) by IIS method. From SIMS and C-V measurements, high dopant activation behavior is exhibited, and from I-V measurement, the ohmic contact behavior at the M/S junction is showed. AFM inspection displays that under 2nd RTA 700 °C 30 s no agglomeration occurs. These results suggest that IIS method has the potential to integrate with high-k dielectric due to its low process temperature. It gives an alternate for future device integration. 相似文献
15.
T. V. Krachino M. V. Kuz’min M. V. Loginov M. A. Mittsev 《Physics of the Solid State》2004,46(3):563-568
Silicide formation in thin films produced by depositing Eu atoms on the Si(111) surface is studied using LEED, Auger electron spectroscopy, contact potential difference, and isothermal thermal-desorption spectroscopy. It is shown that if Eu is deposited on a substrate at room temperature, the growing film is disordered and consists of almost pure Eu. At high temperatures (T≥500 K), the Eu-Si(111) system forms through the Stranski-Krastanow mechanism; namely, first a two-dimensional transition layer (reconstruction) with the (2×1) structure forms and then three-dimensional silicide crystallites grow on it. A specific feature of this system is a low rate of diffusion of Si atoms in the europium silicides. This feature accounts for the concentration gradient of Si atoms across the silicide film thickness and, as a consequence, the multiphase film composition. 相似文献
16.
A short range disorder model, unlike present long range disorder theories, has been able to account well for both the density of states and the optical properties of amorphous Ge and Si. Our results indicate that the imaginary part of the dielectric function for amorphous Ge and Si has the same form as an averaged gradient matrix element as a function of energy. This conclusion should be valid for all tetrahedrally bonded amorphous solids. 相似文献
17.
The solid-phase synthesis of iron silicides on the Si(100)2 × 1 surface with a 5-ML-thick iron film deposited at room temperature was studied by high-resolution photoelectron spectroscopy with the use of synchrotron radiation. Computer simulation of the measured Si 2p spectra revealed the formation of silicides in this system already under annealing at a temperature of 60°C. The process of formation consists in successive syntheses of three iron silicide phases, more specifically, monosilicide ε-FeSi, metastable disilicide γ-FeSi2, and disilicide β-FeSi2. The temperature ranges of existence of these phases were determined. Silicon was found to segregate on the γ-FeSi2 surface. 相似文献
18.
We describe experiments in which positronium (Ps) is emitted from the surface of p-doped Si(100), following positron implantation. The observed emission rate is proportional to a Boltzmann factor exp{-E(A)/kT}, which is dependent on the temperature T of the sample and a characteristic energy E(A)=(0.253±0.004) eV. Surprisingly, however, the Ps emission energy has a constant value of ~0.16 eV, much greater than kT. This observation suggests the spontaneous emission of energetic Ps from a short-lived metastable state that becomes thermally accessible to available surface electrons once the positron is present. A likely candidate for this entity is an electron-positron state analogous to the surface exciton observed on p-Si(100) c(4×2) by Weinelt et al. [Phys. Rev. Lett. 92, 126801 (2004)]. 相似文献
19.
采用等离子体增强化学气相沉积技术,以SiH4作为硅源, NH3和N2共同作为氮源,在单晶硅衬底上制备了不同的氮化硅薄膜. X射线衍射分析薄膜晶体结构,通过计算晶格尺寸大小证明了纳米硅颗粒的存在. 傅里叶变换红外光谱分析了薄膜中的键合作用的变化并结合化学反应过程对氮化硅薄膜中纳米硅颗粒的形成机制进行了研究,发现Si—Si键作为硅纳米颗粒的初始位置, 当反应朝着生成Si—Si的方向进行时,可以促进氮化硅薄膜中硅纳米颗粒的形成. X射线衍射分析和光致发光实验结果表明Si—Si键浓度增大时, 所形成的纳米硅颗粒的尺寸和浓度都随之增大. 相似文献
20.
In the course of a systematic investigation of heavy ion-irradiated Fe/Si layers, we have studied atomic transport and phase formation induced by 22-keV 14N2+ ion implantation in 57Fe(30 nm)/Si bilayers at high fluences. We report here results obtained by Rutherford backscattering spectroscopy, X-ray diffraction, and conversion electron Mössbauer spectroscopy after implantation and post-implantation annealing treatments. The irradiations caused little sputtering, but significant interface mixing. During implantation, iron nitrides, but no silicides were formed, even at the highest nitrogen fluence of 2×1017 ions/cm2. When heating these samples in vacuo up to 700 °C, the iron-rich phases -Fe3N and -Fe4N were produced. Starting at 600 °C the silicide phase -FeSi2 was also identified. PACS 61.72.Ww; 61.80.-x; 68.35.Dv; 81.20.-n; 81.70.-q 相似文献