Calibration of excitonic photoluminescence to determine high aluminum concentrations in silicon

The photoluminescence spectroscopy method for determining the concentration of shallow acceptors or donors in silicon is extended for the case of aluminum. A calibration function of the photoluminescence intensity ratio of the aluminum bound exciton Al_TO(BE) and the free exciton I_TO(FE) is reported in the aluminum concentration range of 10¹⁵–10¹⁷ atoms/cm³ and in the temperature range of 15 K < T < 27 K. It is described as Al_TO(BE)/I_TO( FE) = 10^–15.1 × c_Al^0.84 × e^5.9meV/kT.

     

Determination of the disorder profile in an ion‐implanted silicon carbide single crystal by Raman spectroscopy

Silicon carbide is an interesting material for GEN IV fission reactor projects because of its excellent properties. However, these properties will be altered under extreme conditions such as irradiation because of accumulation of damage. Mechanisms playing a role in defect formation require further studies in the case of high energy heavy ion irradiations. In this work a silicon carbide single crystal slice has been implanted with 20 MeV Au ions and probed by using Raman spectrometry. The resulting Raman spectra recorded as a function of depth clearly show a damaged zone, in which the width is in agreement with the projected range of the incident ions (R_p) calculated by using SRIM code. In this area, three damaged zones have been brought to light because of the high spatial resolution of the Raman spectrometry technique. The existence of these zones is discussed with regard to the different energy loss regimes of the implanted ions such as the electronic and nuclear ones. Copyright © 2012 John Wiley & Sons, Ltd.     

Structural and optical properties of a NaCl single crystal doped with CuO nanocrystals

A cupric oxide (CuO) nanocrystal-doped NaCl single crystal and a pure NaCl single crystal are grown by using the Czochralski (Cz) method. A number of techniques, including X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray (EDX) analysis, Fourier transform infrared (FT-IR) spectroscopy, Raman spectroscopy, optical absorption in the UV-visible range, and photoluminescence (PL) spectroscopy are used to characterize the obtained NaCl and NaCl:CuO crystals. It is observed that the average radius of CuO crystallites in NaCl:CuO crystal is about 29.87 nm, as derived from the XRD data analysis. Moreover, FT-IR and Raman spectroscopy results confirm the existence of the monoclinic CuO phase in NaCl crystal. UV-visible absorption measurements indicate that the band gap of the NaCl:CuO crystal is 434 nm (2.85 eV), and it shows a significant amount of blue-shift (△Eg = 1 eV ) in the band gap energy of CuO, which is due to the quantum confinement effect exerted by the CuO nanocrystals. The PL spectrum of the NaCl:CuO shows a broad emission band centred at around 438 nm, which is consistent with the absorption measurement.     

基于硅波导的喇曼光放大器

在硅波导上添加反向偏压的PIN结构,当波导产生受激喇曼散射时,可以将波导中双光子吸收(TPA)产生的光生自由载流子扫出波导,降低了波导的非线性损失,极大地提高了硅波导中泵浦光对信号光的喇曼增益。为了应用已经非常成熟的硅工艺,并且应用硅波导使器件小型化,根据法布里-帕罗(F-P)腔和行波放大器理论,在硅波导两端的解理面蒸镀增透膜,应用这种波导的喇曼效应设计了一种光放大器,即基于硅波导的喇曼光放大器。建立了计算放大器增益的方程,给出了不同波导长度和输入功率情况下的放大器增益,得出适当增加波导长度和泵浦光功率可以得到较高喇曼增益的结论。基于硅的光放大器有较高的饱和功率且没有泵浦源的限制,通过调整泵浦激光的波长可以放大不同波长的信号光。     

Gold nanoparticle-coated silicon cone array for surface-enhanced Raman spectroscopy

ABSTRACT

We demonstrate a silicon cone array substrate coated with gold nanoparticles and which was highly sensitive, homogeneous, and provided a large area for surface-enhanced Raman spectroscopy (SERS). A deep reactive ion-etching process was used to fabricate the high-density silicon cone array, and gold nanoparticles were formed on the silicon cone surface by magnetron sputtering. The substrate was tested with 10^?6 M rhodamine 6 G solution. Enhancement of the substrate was about 60-fold greater than that of flat substrate. Moreover, SERS signals obtained from 24 random areas on the substrate showed good homogeneity with an average standard deviation of 3.9%.     

Fano resonance in heavily doped porous silicon

Unexpectedly, the Fano resonance caused by the interference of continuum electron excitations with the longitudinal optical (LO) phonons was observed in random porous Si by Raman scattering. The analysis of the experimental data shows that the electron states trapped at the Si SiO₂ interface dominate in the observed Raman scattering. The gap energy associated with the interface states was determined. Copyright © 2011 John Wiley & Sons, Ltd.     

Improving the material quality of silicon ingots by aluminum gettering during crystal growth

We present a method for the purification of silicon ingots during the crystallization process that reduces significantly the width of the low charge carrier lifetime region at the ingot top. The back‐diffusion of impurities from the ingot top is suppressed by adding a small amount of pure aluminum into the silicon melt right at the end of the solidification. We study the aluminum gettering effect by instrumental neutron activation analysis (INAA) and Fe_i imaging. Furthermore, we present a model for aluminum gettering of Fe in the silicon ingot that is in agreement with literature data for aluminum gettering at lower temperature. The distribution of iron in the ingots with and without aluminum is fairly well predicted by a combination of this model with a model for Fe contamination from the crucible system. A simulation with varying Al content exhibits further potential for an increased yield of silicon wafers with high charge carrier lifetime. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

激光诱导多孔硅晶格畸变的Raman光谱和光致发光谱研究

研究了掺钛水热法制备多孔硅的Raman光谱和光致发光谱.实验发现,当激光功率较低时,多孔硅的Raman光谱在略低于520cm^-1附近表现为一锐的单峰,和晶体硅的Raman光谱类似.随激光功率增大,该单峰向低波数移动,Raman和光致发光峰的强度与激光强度的一次方成正比.当激光功率增大到一定值时,该单峰分裂成两个Raman峰,光致发光谱的强度突然增大,与激光强度之间不再满足一次方的关系,位于低波数一侧的Raman峰随激光功率增大进一步向低波数移动.多孔硅Raman光谱随激光功率的变化是 关键词： 多孔硅 Raman光谱 光致发光     

Photoluminescence and Raman spectroscopy studies of Eu3+-doped rutile TiO2 nanocrystals at high pressures

Nanocrystal samples (particle size about 90 nm) of Eu³⁺-doped rutile titanium dioxide (TiO₂) nanocrystals (rutile Eu³⁺/TiO₂ nanocrystals) were synthesized by the sol–gel method with hydrothermal treatment. The pressure effect on photoluminescence (PL) and Raman spectra of the rutile Eu³⁺/TiO₂ nanocrystals was investigated with a diamond anvil cell under hydrostatic pressure condition. Raman spectra of the samples at high pressures indicated that the critical pressure for the transition from the rutile phase to a new baddeleyite-type phase was between 10 and 14.2 GPa. The position of Raman bands shifted to high wavenumbers and the PL intensity of ⁵D ₀→⁷F ₂ transition of Eu³⁺ decreased down to zero with the increase of pressure before the phase transition occurred. After releasing the pressure, the rutile phase was not recovered and a α-PbO₂-type phase was observed at ambient pressure.     

An application of Raman spectroscopy on the measurement of residual stress in porous silicon

The porous silicon film, at micron level, and the bulk silicon substrate is a basic structure in MEMS components. The residual stress, due to the lattice mismatch between the film and the substrate, exists on the interface and may cause cracking and damaging on the component. Micro-Raman spectroscopy is an optical measurement method that was rapidly applied into the fields of chemistry, physics, material science and mechanics. In this paper, the method is introduced and applied to the study of the stress problems in porous silicon as follows. (1) In the electrochemical etching technique for porous silicon preparation, the distribution of the tensile residual stress along the transitional region between etched and un-etched area is experimentally studied and the result reveals the stress is continuous across the region. In the etched region it reaches GPa level, and in the transition region the gradient of the stress is high. (2) In chemical etching preparation of porous silicon, the residual stress rises up seriously in the cracked area, up to 0.92 GPa. With the porosity increasing, the tensile stress on the porous silicon film increases accordingly. The appearance of the porous silicon film surface is also given by metalloscope and atomic force microscope. The structure of the micro-pores is expected to have a close relation with the distribution of the residual stress.     

Photon migration of Raman signal in bone as measured with spatially offset Raman spectroscopy

Spatially offset Raman spectroscopy (SORS) is currently being developed as an in vivo tool for bone disease detection, but to date, information about the interrogated volume as influenced by the light propagation and scattering characteristics of the bone matrix is still limited. This paper seeks to develop our general understanding of the sampling depths of SORS in bone specimens as a function of the applied spatial offset. Equine metacarpal bone was selected as a suitable specimen of compact cortical bone large enough to allow several thin slices (600 µm) to be cut from the dorsal surface. Photon migration at 830‐nm excitation was studied with five bone slices and a 380‐µm‐thin polytetrafluoroethylene (PTFE) slice placed consecutively between the layers. To optimize Raman signal recovery of the PTFE with increasing depth within the bone stack required a corresponding increase in spatial offset. For example, to sample effectively at 2.2‐mm depth within the bone required an optimal SORS offset of 7 mm. However, with a 7‐mm offset, the maximum accessible penetration depth from which the PTFE signal could be still recovered was 3.7 mm. These results provide essential basic information for developing SORS technology for medical diagnostics in general and optimizing sampling through bone tissue, permitting a better understanding of the relationship between the offset and depth of bone assessed, in particular. Potential applications include the detection of chemically specific markers for changes in bone matrix chemistry localized within the tissue and not present in healthy bone. © 2015 The Authors. Journal of Raman Spectroscopy published by John Wiley & Sons, Ltd.     

Monitoring by Raman spectroscopy of the damage induced in the wake of energetic ions

This article reports micro‐Raman experiments performed on cross sections of 6H‐SiC crystals irradiated with heavy ions of different energies. The results demonstrate that this technique is very powerful to quantify the damage created in the wake of energetic ions from the surface of samples down to the ion resting position. For slow ions (900‐keV I), ballistic collisions lead to the amorphization of the surface region of samples. For swift ions (36‐MeV W), the surface region remains crystalline and amorphization occurs around the end of the ion path. Moreover, synergistic effects between electronic and nuclear slowing down processes are put forward. The methodology used in this work may be adapted to other materials where radiation effects need to be investigated, provided that the damage created by irradiation is detectable by Raman spectroscopy. Copyright © 2014 John Wiley & Sons, Ltd.     

Optical spectroscopy study of damage evolution in 6H-SiC by H_2~+ implantation

Lattice defects induced by ion implantation into Si C have been widely investigated in the decades by various techniques. One of the non-destructive techniques suitable to study the lattice defects in Si C is the optical characterization. In this work, confocal Raman scattering spectroscopy and photoluminescence spectrum have been used to study the effects of 134-ke V H_2~+ implantation and thermal treatment in the microstructure of 6 H-Si C single crystal. The radiation-induced changes in the microstructure were assessed by integrating Raman-scattering peaks intensity and considering the asymmetry of Raman-scattering peaks. The integrated intensities of Raman scattering spectroscopy and photoluminescence spectrum decrease with increasing the fluence. The recovery of the optical intensities depends on the combination of the implantation temperature and the annealing temperature with the thermal treatment from 700℃ to 1100℃. The different characterizations of Raman scattering spectroscopy and photoluminescence spectrum are compared and discussed in this study.     

Recrystallization of hexagonal silicon carbide after gold ion irradiation and thermal annealing

Silicon carbide (SiC) single crystals with the 6H polytype structure were irradiated with 4.0-MeV Au ions at room temperature (RT) for increasing fluences ranging from 1?×?10¹² to 2?×?10¹⁵ cm^?2, corresponding to irradiation doses from ~0.03 to 5.3 displacements per atom (dpa). The damage build-up was studied by micro-Raman spectroscopy that shows a progressive amorphization by the decrease and broadening of 6H-SiC lattice phonon peaks and the related growth of bands assigned to Si–Si and C–C homonuclear bonds. A saturation of the lattice damage fraction deduced from Raman spectra is found for ~0.8?dpa (i.e. ion fluence of 3?×?10¹⁴ cm^?2). This process is accompanied by an increase and saturation of the out-of-plane expansion (also for ~0.8?dpa), deduced from the step height at the sample surface, as measured by phase-shift interferometry. Isochronal thermal annealing experiments were then performed on partially amorphous (from 30 to 90%) and fully amorphous samples for temperatures from 200 °C up to 1500 °C under vacuum. Damage recovery and densification take place at the same annealing stage with an onset temperature of ~200 °C. Almost complete 6H polytype regrowth is found for partially amorphous samples (for doses lower than 0.8 dpa) at 1000 °C, whereas a residual damage and swelling remain for larger doses. In the latter case, these unrelaxed internal stresses give rise to an exfoliation process for higher annealing temperatures.     

光子相关光谱技术及其应用

讨论了光子相关光谱（PCS）技术的原理和测量过程，介绍了光子相关光谱方法在生物工程、药物学以及微生物领域的应用。     

VHF-PECVD低温制备微晶硅薄膜的拉曼散射光谱和光发射谱研究

采用拉曼散射光谱和PR650光谱光度计对VHF-PECVD制备的微晶硅薄膜进行了结构表征和在线监测研究.结果表明：功率对材料的晶化率（χc）有一定的调节作用，硅烷浓度大，微调作用更明显；SiH*的强度只能在一定的范围内表征材料的沉积速率，功率大相应的速率反而下降；I［Hα*］/I［SiH*］强度比值反映了材料晶化程度，此结果和拉曼散射光谱测试结果显示出一致性；I［Hβ*］/I［Hα*］的强度比表明氢等离子体中的电子温度随功率的增大而逐渐降低. 关键词： 甚高频等离子体增强化学气相沉积 微晶硅 拉曼散射谱 光发射谱     

Applications of Raman spectroscopy in herbal medicine

Raman spectroscopic techniques are a group of chemical fingerprint detection methods based on molecular vibrational spectroscopy. They are compatible with aqueous solutions and are time saving, nondestructive, and highly informative. With complementary and alternative medicine (CAM) becoming increasingly popular, more people are consuming natural herbal medicines. Thus, chemical fingerprints of herbal medicines are investigated to determine the content of these products. In this study, I review the different types of Raman spectroscopic techniques used in fingerprinting herbal medicines, including dispersive Raman spectroscopy, resonance Raman spectroscopy, Fourier transform (FT)–Raman spectroscopy, surface-enhanced Raman scattering (SERS) spectroscopy, and confocal/microscopic Raman spectroscopy. Lab-grade Raman spectroscopy instruments help detect the chemical components of herbal medicines effectively and accurately without the need for complicated separation and extraction procedures. In addition, portable Raman spectroscopy instruments could be used to monitor the health and safety compliance of herbal products in the consumer market.     

Pseudo nanocrystal silicon induced .luminescence enhancement in a-Si/SiO2 multilayers

Enhanced photoluminescence （PL） at room temperature from thermally annealed a-Si：H/SiO2 multilayers is observed through the step-by-step thermal post-treatment. The correlation between the PL and the crystallization process is studied using temperature-dependent PL, Raman, cross section high-resolution transmission electron microscopy （XHRTEM） and x-ray diffraction （XRD） techniques. An intensified PL band around 820 nm is discovered from the sample annealed near the crystallization onset temperature, which is composed of two peaks centred at 773 nm and 863 nm, respectively. It is found that the PL band centred at 863 nm is related to the pseudo nanocrystal （p-nc-Si） silicon, and the PL band centred at 773 nm is attributed to Si = O bonds stabilized in the p-nc-Si surface.     

水蒸气退火多孔硅发光性能的正电子谱学研究

使用正电子湮没寿命谱和正电子寿命-动量关联谱对水蒸气和真空条件下退火的多孔硅样品的微观缺陷结构进行表征,结合发射光谱测量结果,对影响多孔硅发光性能的因素进行了讨论.实验结果表明,水蒸气退火后样品孔壁表面的悬挂键减少,并出现新的E′γ和EX类缺陷.水蒸气退火后样品中两种缺陷数量发生变化是导致多孔硅样品发光增强的直接原因;真空退火未使样品中发光相关缺陷发生变化,样品的发光性能没有显著改变.     

Numerical simulations of confocal Raman spectroscopic depth profiles of materials: a photon scattering approach

We present a simple model that uses a novel photon scattering approach to predict the depth profile response obtained when confocal Raman spectroscopy is applied both to silicon and to a number of related polymeric materials of varying optical clarity. This paper first provides an overview of the models proposed to date to demonstrate the evolution in understanding of the confocal Raman response of semi‐transparent materials, based upon geometrical optics. A new model is then described that is based upon the twin notions of a permanent extended Raman illuminated volume and the degree of extinction of the incident and Raman scattered photons from the whole of the illuminated volume as it is gradually moved further into, or defocused above, the sample. The model's predictions are compared with empirical data from previous studies of a range of semi‐crystalline polymers with different scattering properties and, by means of contrast, with that of a silicon sample. We show that, despite its inherent simplicity, the physics this model utilizes is able successfully to predict the form of the depth profile for each material, something that has not been achieved by any model previously proposed, and that the parameters used in the model scale with independent physical measurements. Finally the model is used to account for the fact that useful Raman spectra can be obtained when the laser is focused as much as 40 µm above the sample surface. Copyright © 2007 John Wiley & Sons, Ltd.