HL-1M装置电子回旋加热过程中的超热电子测量

在HL-1M托卡马克上进行的电子圆旋共振加热实验表明,在低等离子体密度加热过程中。产生大量的超热电子。由Si(Li)和碘化汞(HgI2)半导体探测器阵列测量到的软X射线和中能(15～150keV)X射线能谱,得到超热电子的温度在30～60keV范围内。中能X射线辐射强度测量结果证实,等离子体对电子圆麓波的吸收是定域性的。在超热电子对MHD的相互作用中,主要的m／n=2/1模没有增强或抑制现象。     

HL—1装置逃逸电子扰动及硬X射线发射

HL-1装置逃逸电子扰动,硬X射线锯齿振荡和软X射线锯齿振荡关联,内破裂后硬X射线发射强度到其峰值的延迟时间,被解释为逃逸电子从q=1面附近输运到等离子体边缘时间。当有电子回旋共振预电离时,硬X射线显著减少;相反,电子回旋共振加热时,硬X射线明显地增加。     

HER磁镜上硬X射线和热电子测量

一、引言 磁镜运行中,为了要知道它在电子回旋共振加热(ECRH)下形成热电子的参数,我们测量了硬X射线能谱、硬X射线发射的时间特性、不同磁场强度下形成热电子环的位置、以及热电子的脉冲幅度分布等。 HER是中国科学院等离子体物理研究所简单型磁镜装置,它的几何尺寸是,真空室长     

超热电子与金黑腔靶作用产生硬X射线的蒙特卡罗模拟

激光打靶产生大量麦氏分布的超热电子,与金腔靶相互作用产生硬X射线.利用蒙特卡罗方法,对超热电子在金腔靶中的传输进行了研究,模拟了在不同超热电子温度、份额下硬X射线谱的变化及在不同腔体尺寸、腔壁厚度情况下,硬X射线谱的变化情况,给出硬X射线产生效率的决定因素.利用硬X射线谱反推得到的超热电子信息与蒙特卡罗程序模拟结果相结合的方法,获得金腔内部超热电子初始信息. 关键词： 热电子 超热电子 蒙特卡罗方法 硬X射线     

HL—1装置的硬X射线锯齿振荡

软X射线的锯齿振荡,在ST,Pulsator和TEXT等装置上已观测到;在Pulsator和PLT上已研究了硬X射线锯齿波。PLT和Pulsator观测结果为,产生的硬X射线锯齿振荡为反锯齿和内破裂的软X射线锯齿相对应。Pulsator的硬X射线锯齿和软X射线锯齿一样,这种趋势一直持继到放电结束,而硬X射线峰值发生在软X射线内破裂后大约200μs。PLT的硬X射线锯齿比软X射线锯齿延迟1至5ms。本工作目的是在内破裂后,从软、硬X射线锯齿波对比,观测硬X射线到达峰值这段延迟时间,并以此来量度逃逸电子约束时间。     

科苑快讯

“硬X射线磁圆二色谱”预研获得成功据《高能所月报》报道 ,2 0 0 4年 3月 1 4日北京同步辐射装置 1W1A束线XAFS实验站成功获得“PtL吸收边的硬X射线磁圆二色谱(XMCD)”。XMCD是开展磁性材料电子和磁结构研究的重要手段。项目的关键是获得X射线圆偏振光。XMCD的成功不仅意味着获得新的实验方法 ,拓展国内同步辐射在磁性材料研究领域的研究 ,更重要的是北京同步辐射装置在利用同步辐射偏振效应上获得进一步深入 ,为今后开展X射线圆二色谱 ,X射线(磁 )线二色谱 ,共振磁散射等新的方法奠定了坚实的基础。蝴蝶知道怎样“涂黑”翅膀如…     

HL-1装置硬x射线辐射剂量测量

一、引言 多年来,从事受控核聚变的研究人员相继对环形磁约束装置的硬X射线辐射做了许多深入的实验研究,因为逃逸电子是高温等离子体的必然产物,通过逃逸电子产物——硬X射线的研究,便可得知等离子体的行为。但是,装置的硬X射线辐射剂量却直接影响到周围环境及工作人员的身体健康。高能X射线通过物质时,主要以光电效应,康普顿散射和电子对效应损失能量,进入生物组织后,X射线能量在其中转移、吸收乃至最终导致组织损伤。随着实验的进展,人们对硬X射线辐射剂量日益关心。为此,1987年,我们在HL-1装置实验运行期间(近旁的电子回旋共振加热系统未投入工作),测量了装置的硬X射线辐射剂量。     

CT-6托卡马克电子回旋辐射测量

本文报道了测量CT—6托卡马克二次谐波非寻常模的电子回旋辐射的实验结果及局部等离子体的电子温度Te随时间变化。通过改变装置纵场B_T值得到Te的空间分布。与硬X射线测量比较,确定了CT-6装置在电流上升阶段经常出现的逃逸电子辐射现象。本文也给出了实验中所观察到的等离子体内部MHD不稳定性所引起的辐射锯齿形扰动。     

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在HL-2A的实验中,我们采用了一种像素法二维层析成像分析技术对软X射线进行反演成像。该方法可对等离子体截面软X射线分布提供详细及可视化的研究方法。该二维层析反演方法已经在HL-2A上得到了成功应用,重建了杂质注入过程和双锯齿破裂过程。     

磁镜装置中ECR等离子体硬X射线强度观测

本文描述用硬X射线针孔成象法测量简单磁镜装置中ECR等离子体辐射特性的方法及其结果。这种非破坏性的成象法,直接显示了热电子等离子体的空间分布,一次放电可成一帧清晰的象,且由此可得出二维的等发射强度线。大量结果表明电子环是非轴对称的,并非为一个整环,而是在微波注入口的对面有一个缺口。当微波功率改变时,环也在改变。     

Nonequilibrium molecular dynamics simulation for studying the effect of pressure difference and periodic boundary conditions on water transport through a CNT membrane

A NEMD simulation system is constructed to simulate at two-dimensional (2D) periodic boundary conditions (PBCs) and to create two different pressures on two sides of the carbon nanotube (CNT) membrane. The simulation results show that water permeation through the same CNT membrane driven by different pressure differences exhibit similar transport phenomenon including unusually fast water permeation and a periodic (non-parabolic) radial velocity distribution unlike the parabolic form characteristic of continuum flow in the CNT membrane. A three-dimensional (3D) PBC system is also constructed to simulate water permeation through the same CNT membrane at the same pressure differences, to show the effect of PBC and simulation methodologies on transport phenomenon. The two systems both show that the forward/backward water flux increases/decreases with increasing the pressure difference from 1.0 MPa to 8.0 MPa. However, the net flux is higher for the 3D PBC system, especially at higher pressure difference is high. In general, the NEMD simulation method using the 2D PBC system is shown to be a feasible and valuable tool for studying pressure-driven permeation processes such as nanofiltration through these studies with model CNT membrane.     

HL-2A装置SDD软X射线PHA阵列实验结果

用软X射线脉冲高度分析(PHA)阵列系统获得了等离子体的电子温度剖面和电子速率分布的时间演化。测量结果表明,电子温度剖面在OH阶段较平缓,接近抛物线1.0×[1-(r/a)²]²分布;而在ECRH(功率0.8MW)阶段,等离子体中心(z＝0)电子温度上升了0.6keV,边缘(z＝30cm)处只上升了0.1keV,反映出ECRH功率沉积在等离子体中心区域;在ECRH期间有大量的高能电子产生,因而电子速率分布在ECRH期间显著改变;等离子体中心的高能电子的数量和能量都比等离子体边缘的增加更大,ECRH(～0.8MW)期间等离子体中心(z＝0)产生的高能电子的能量可达17keV。分析表明：在ECRH(纵场B_t=1.3T)放电期间,ECRH加热效果显著,ECRH的功率主要沉积在等离子体中心附近;电子温度剖面在ECRH阶段较OH阶段峰化;ECRH期间有大量的高能电子产生,电子速率分布被改变成为非麦克斯韦分布。     

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用软X射线脉冲高度分析(PHA)阵列系统获得了等离子体的电子温度剖面和电子速率分布的时间演化。测量结果表明,电子温度剖面在OH阶段较平缓,接近抛物线1.0×[1-(r/a)2]2分布;而在ECRH(功率0.8MW)阶段,等离子体中心(z＝0)电子温度上升了0.6keV,边缘(z＝30cm)处只上升了0.1keV,反映出ECRH功率沉积在等离子体中心区域;在ECRH期间有大量的高能电子产生,因而电子速率分布在ECRH期间显著改变;等离子体中心的高能电子的数量和能量都比等离子体边缘的增加更大,ECRH(～0.8MW)期间等离子体中心(z＝0)产生的高能电子的能量可达17keV。分析表明：在ECRH(纵场Bt=1.3T)放电期间,ECRH加热效果显著,ECRH的功率主要沉积在等离子体中心附近;电子温度剖面在ECRH阶段较OH阶段峰化;ECRH期间有大量的高能电子产生,电子速率分布被改变成为非麦克斯韦分布。     

管靶X射线辐射输运初步研究Ⅱ.实验测量与分析

从实验上研究了X射线在管靶中辐射输运情况.给出两种分解靶：源靶、输运靶.源靶可得到X射线输运的输入条件,输运靶是近似一维X射线输运管道,对其测量可得到输运的结果;给出两种分解靶由软X射线谱仪、平响应XRD和透射光栅谱仪(配X射线CCD)测量的结果,并对实验结果进行分析;最后对输运管道内的等离子体膨胀问题进行了讨论. 关键词：     

A global inversion method for multi-dimensional NMR logging

We describe a general global inversion methodology of multi-dimensional NMR logging for pore fluid typing and quantification in petroleum exploration. Although higher dimensions are theoretically possible, for practical reasons, we limit our discussion of proton density distributions as a function of two (2D) or three (3D) independent variables. The 2D can be diffusion coefficient and T(2) relaxation time (D-T(2)), and the 3D can be diffusion coefficient, T(2), and T(1) relaxation times (D-T(2)-T(1)) of the saturating fluids in rocks. Using the contrast between the diffusion coefficients of fluids (oil and water), the oil and water phases within the rocks can be clearly identified. This 2D or 3D proton density distribution function can be obtained from either two-window or regular type multiple CPMG echo trains encoded with diffusion, T(1), and T(2) relaxation by varying echo spacing and wait time. From this 2D/3D proton density distribution function, not only the saturations of water and oil can be determined, the viscosity of the oil and the gas-oil ratio can also be estimated based on a previously experimentally determined D-T(2) relationship.     

化学位移张量的测量

对于刚性晶格中的分子,化学位移是与外加磁场空间取向相关的张量,这个张量有6个独立的分量. 化学位移张量也可以利用其主轴分量及主轴与晶体坐标系的方向余弦来表示. 很显然,知道了固体分子中各不等价位置处的化学位移张量,就可以推测出分子中电子分布的图象,具有重要意义. 本文首先描述了化学位移张量测量的理论,对测量化学位移 各 向异性的各种方法作了介绍和比较,并详细论述了一些常用的方法,如二维魔角跳旋转(M a gic Angle Hopping, MAH)、二维魔角慢旋转(Magic Angle Turning, MAT)和二维变相旋转边带分离（2D phase-adjusted spinning sidebands, 2D-PASS）技术等. 最后,还介绍了单晶化学位移张量的常规测量方法.     

Design of the beam transport line and injection system of the compact storage ring for TTX

In this article, we present the design of the beam transport line and injection system of the compact storage ring for the Tsinghua Thomson scattering X-ray (TTX) source. The layout of the beam transport line fits in with the limited available space. The injection system is simplified, consisting of only one single kicker; the stray field on the reference orbit is also reduced without the septum magnet. We choose a travelling wave kicker and present both 2D and 3D simulations for the structure design.     

Extracting weak phase information from B-->V1V2 decays

We describe a new method for extracting weak, CP-violating &Dmacr;phase information, with no hadronic uncertainties, from an angular analysis of B-->V1V2 decays, where V1 and V2 are vector mesons. The quantity sin (2)(2beta+gamma) can be cleanly obtained from the study of decays such as B(0)(d)(t)-->D*+/-rho(-/+), D(*+/-)a(-/+)(1), D(;) *0K(;) (*0), etc. Similarly, one can use B(0)(s)(t)-->D(*+/-)(s)K*-/+ to extract sin (2)gamma. There are no penguin contributions to these decays. It is possible that sin (2)(2beta+gamma) will be the second function of CP phases, after sin2beta, to be measured at B factories.     

Validation of the Ability of Full Configuration Interaction Quantum Monte Carlo for Studying the 2D Hubbard Model

To validate the ability of full configuration interaction quantum Monte Carlo(FCIQMC) for studying the 2 D Hubbard model near half-filling regime, the ground state energies of a 4 x 4 square lattice system with various interaction strengths are calculated. It is found that the calculated results are in good agreement with those obtained by exact diagonalization(i.e., the exact values for a given basis set) when the population of psi particles(psips) is higher than the critical population required to correctly sample the ground state wave function. In addition, the variations of the average computational time per 20 Monte Carlo cycles with the coupling strength and the number of processors are also analyzed. The calculated results show that the computational efficiency of an FCIQMC calculation is mainly affected by the total population of psips and the communication between processors. These results can provide useful references for understanding the FCIQMC algorithm, studying the ground state properties of the 2 D Hubbard model for the larger system size by the FCIQMC method and using a computational budget as effectively as possible.     

Electronic Transport and Thermopower in 2D and 3D Heterostructures—A Theory Perspective

The impact of interfaces and heterojuctions on the electronic and thermoelectric transport properties of materials is discussed herein. Recent progress in understanding electronic transport in heterostructures of 2D materials ranging from graphene to transition metal dichalcogenides, their homojunctions (grain boundaries), lateral heterojunctions (such as graphene/MoS₂ lateral interfaces), and vertical van der Waals heterostructures is reviewed. Work on thermopower in 2D heterojunctions, as well as their applications in creating devices such as resonant tunneling diodes (RTDs), is also discussed. Last, the focus turns to work in 3D heterostructures. While transport in 3D heterostructures has been researched for several decades, here recent progress in theory and simulation of quantum effects on transport via the Wigner and non‐equilibrium Green's functions approaches is reviewed. These simulation techniques have been successfully applied toward understanding the impact of heterojunctions on transport properties and thermopower, which finds applications in energy harvesting, and electron resonant tunneling, with applications in RTDs. In conclusion, tremendous progress has been made in both simulation and experiments toward the goal of understanding transport in heterostructures and this progress will soon be parlayed into improved energy converters and quantum nanoelectronic devices.