FORMATION OF A BURIED LAYER OF ALUMINIUM NITRIDE BY HIGH DOSE N2+ IMPLANTATION INTO ALUMINIUM

Aluminium films with various thickness between 700 nm and 1μm were deposited on Si (100) substrates, and 400 keV N₂⁺ ions with doses ranging from 4.3×10¹⁷ to 1.8×10¹⁸ N/cm² were implanted into the alu-minium films on silicon, Rutherford Backscattering (RBS) and channeling, secondary ion mass spectroscopy (SIMS), Fourier transform infrared spectra (FTIR), X-ray diffraction (XRD), transmission electron microscopy (TEM) and spreading resistance probes (SRP) were used to characterize the synthesized aluminium nitride. The experiments showed that when the implantation dose was higher than a critical dose N_c, a buried stoichiometric AlN layer with high resistance was formed, while no apparent AlN XRD peaks in the as-implanted samples were observed; however, there was a strong AlN(100) diffraction peak appearing after annealing at 500 ℃ for 1h. The computer program, Implantation of Reactive Ions into Silicon (IRIS), has been modified and used to simulate the formation of the buried AlN layer as N₂⁺ is implanted into aluminium. We find a good agreement between experimental measurements and IRIS simulation.     

Thermal annealing induced photocarrier radiometry enhancement for ion implanted silicon wafers

An experimental study on the photocarrier radiometry signals of As⁺ ion implanted silicon wafers before and after rapid thermal annealing is performed. The dependences of photocarrier radiometry amplitude on ion implantation dose (1×10¹¹--1×10¹⁶/cm²), implantation energy (20--140 keV) and subsequent isochronical annealing temperature (500--1100 du are investigated. The results show that photocarrier radiometry signals are greatly enhanced for implanted samples annealed at high temperature, especially for those with a high implantation dose. The reduced surface recombination rate resulting from a high built-in electric field generated by annealing-activated impurities in the pn junction is believed to be responsible for the photocarrier radiometry signal enhancement. Photocarrier radiometry is contactless and can therefore be used as an effective in-line tool for the thermal annealing process monitoring of the ion-implanted wafers in semiconductor industries.     

Cluster-assisted generation of multi-charged ions in nanosecond laser ionization of pulsed hydrogen sulfide beam at 1064 and 532nm

The multi-charged sulfur ions of S^q= (q\le 6) have been generated when hydrogen sulfide cluster beams are irradiated by a nanosecond laser of 1064 and 532,nm with an intensity of 10¹⁰\sim 10¹²W1\cdotcm^-2. S⁶⁺ is the dominant multi-charged species at 1064nm, while S⁴⁺, S³⁺ and S²⁺ ions are the main multi-charged species at 532nm. A three-step model (i.e., multiphoton ionization triggering, inverse bremsstrahlung heating, electron collision ionizing) is proposed to explain the generation of these multi-charged ions at the laser intensity stated above. The high ionization level of the clusters and the increasing charge state of the ion products with increasing laser wavelength are supposed mainly due to the rate-limiting step, i.e., electron heating by absorption energy from the laser field via inverse bremsstrahlung, which is proportional to \lambda ², \lambda being the laser wavelength.     

Optical and magnetic properties of nitrogen ion implanted MgO single crystal

The microstructure,optical property and magnetism of nitrogen ion implanted single MgO crystals are studied. A parallel investigation is also performed in an iron ion implanted single MgO sample as a reference. Large structural,optical and magnetic differences are obtained between the nitrogen and iron implanted samples. Room temperature ferromagnetism with a fairly large coercivity field of 300 Oe (1Oe=79.5775 A/m),a remanence of 38% and a slightly changed optical absorption is obtained in the sample implanted using nitrogen with a dose of 1×1018 ions/cm2 . Tran- sition metal contamination and defects induced magnetism can be excluded when compared with those of the iron ion implanted sample,and the nitrogen doping is considered to be the main origin of ferromagnetism.     

He and H sequential implantation induced surface blistering and the exfoliation of Si covered with an oxide layer

Si wafers with a 220 nm top oxide layer were sequentially implanted at room temperature with 40 keV He and 35 keV H ions at a fluence of 5×10¹⁶ /cm² and 1×10¹⁶ /cm² , respectively. Techniques of scanning electron microscopy, atomic force microscopy and cross-sectional transmission electron microscopy （XTEM） were used to characterize the thermal evolution of surface damage as well as defect microstructures. Surface blisters as well as the localized exfoliation （～0.42 μm in depth） have been observed for samples annealed at temperatures of 500℃ and above. XTEM observations reveal a variety of defect microstructures, including cavities, platelets, nanometer or micrometer sized cracks and dislocations. The platelets and cracks are mainly distributed at a depth of about 0.42 μm parallel to the sample surface, which are responsible for the occurrence of the observed surface features. The relationship between surface damage and defect microstructures is described in detail.     

Irradiation effect of yttria-stabilized zirconia by high dose dual ion beam irradiation

Yttria-stabilized zirconia （YSZ） is irradiated with 2.0-MeV Au2＋ ions and 30-keV He＋ ions. Three types of He, Au, Au ＋ He （successively） ion irradiation are performed. The maximum damage level of a sequential dual ion beam implanted sample is smaller than single Au ion implanted sample. A comparable volume swelling is found in a sequential dual ion beam irradiated sample and it is also found in a single Au ion implanted sample. Both effects can be explained by the partial reorganization of the dislocation network into weakly damaged regions in the dual ion beam implanted YSZ. A vacancy-assisted helium trapping/diffusion mechanism in the dual ion beam irradiated condition is discussed. No phase transformation or amorphization behavior happens in all types of ion irradiated YSZ.     

Electrical and structural properties of diamond films implanted by various doses of oxygen ions

Oxygen-doped diamond films are prepared by implanting various dose oxygen ions into the diamond films synthesized by hot filament chemical vapour deposition, and their electrical and structural properties are investigated. Hall effect measurements show that lower dose oxygen ion implantation is beneficial to preparing n-type diamonds. The carrier concentration increases with the dose increasing, indicating that oxygen ions supply electrons to the diamonds. The results of AES spectrum indicate that oxygen ions are doped into the diamond films, and the O-implanted depth is around 0.1μm. Raman spectrum measurements indicate that the lower dose oxygen ion implantation at 10¹⁴cm^-2 or 10¹⁵cm^-2 is favourable for producing less damaged O-doped diamond films.     

Study of the lateral distribution of neodymium ions implanted in silicon

Due to the need to reduce electronic device sizes,it is very important to consider the depth and lateral distribution of ions implanted into a crystalline target.This paper reports that Nd ions with energies of 200 keV to 500 keV and dose of 5×10 15 ions/cm 2 are implanted into Si single crystals at room temperature under the angles of 0,30,and 45,respectively.The lateral spreads of 200 keV-500 keV Nd ions implanted in Si sample are measured by Rutherford backscattering technique.The results show that the measured values are in good agreement with those obtained from the prediction of SRIM2010 codes.     

Ohmic contacts of 4H-SiC on ion-implantation layers

The ohmic contacts of 4H-SiC are fabricated on nitrogen ion implanted layers made by performing box-like-profile implantation three and four times. Implantation parameters such as the standard deviation σ and the projection range R_p are calculated by the Monte Carlo simulator TRIM. Ni/Cr ohmic contacts on Si-face 4H-SiC implantation layers are measured by transfer length methods (TLMs). The results show that the values of sheet resistance R_sh are 30~kΩ /□ and 4.9~kΩ/□ and the values of specific contact resistance ρ_c of ohmic contacts are 7.1× 10^-4Ω.cm² and 9.5× 10^-5Ω.cm² for the implanted layers with implantation performed three and four times respectively.     

Ion dynamics in ultrafast laser ablation of copper target

We investigate the angular distribution and average kinetic energy of ions produced during ultrafast laser ablation （ULA） of a copper target in high vacuum. Laser produced plasma （LPP） is induced by irradiating the target with Ti：Sapphire laser pulses of -50 fs and 800 nm at an angle of incidence of 45°. An ion probe is moved along a circular path around the ablation spot, thereby allowing characterization of the time-of-flight （TOF） of ions at different angles relative to the normal target. The angular distribution of the ion flux is well-described by an adiabatic and isentropic expansion model of a plume produced by solid-target laser ablation （LA）. The angular width of the ion flux becomes narrower with increasing laser fluence. Moreover, the ion average kinetic energy is forward-peaked and shows a stronger dependence on the laser pulse fluence than on the ion flux. Such results can be ascribed to space charge effects that occur during the early stages of LPP formation.     

Depth profiles of metal ions implanted in dielectrics at low energies

The depth profiles of Cu⁺, Ag⁺, and Au⁺ ions implanted into amorphous dielectric SiO₂, Al₂O₃, and soda-lime silicate glass (SLSG) are simulated by the DYNA program. The algorithm follows projectile-ion-substrate-atom pair collisions giving rise to a dynamic variation in the phase composition in the surface layer of the irradiated material and takes into account surface sputtering. Ion implantation up to doses of ≤10¹⁶ ion/cm² at low ion energies of 30, 60, and 100 keV is considered. The measured dynamic variation of the depth profiles of implanted ions as a function of the dose is compared with the standard statistical distribution calculated by the TRIM algorithm.     

预注入对Si1-xCx合金形成的影响

室温下在单晶Si中注入(0.6—1.5)at%的C原子,部分样品在C离子注入之前在其中注入²⁹Si⁺离子产生损伤,然后在相同条件下利用高温退火固相外延了Si_1-xC_x合金,研究了预注入对Si_1-xC_x合金形成的影响.如果注入C离子的剂量小于引起Si非晶化的剂量,在950℃退火过程中注入产生的损伤缺陷容易与C原子结合形成缺陷团簇,难于形成Si_1-xC关键词： 离子注入 固相外延 1-xC_x合金')" href="#">Si_1-xC_x合金     

Structural features of aluminium alloy 1441 irradiated by Ar+ ions

Using electron microscopy it was found that irradiation of clad cold-worked specimens made of commercial aluminium-lithium alloy 1441 by the Ar ⁺ ions of energy 40 keV at low doses of irradiation (10¹⁵ cm⁻², irradiation time 1 s, T < 70 °C) and ion-current density of about 100 μA/cm² results in the transformation of the cellular structure formed in the alloy under deformation. As the dose of irradiation is increased up to 10¹⁶ cm⁻², a transition from a cellular to a subgrain structure close to a polygonal one is observed. The efficiency of the process is increased with ion-current density. Furthermore, under ion irradiation at increased ion-current densities, the β′(Al ₃ Zr) and Al ₈ Fe ₂ Si particles present in the deformed alloy dissolve, and disperse particles of a new Al ₂ LiMg phase of platelet shape are formed. The changes in the dislocation structure and phase composition in alloy 1441 are observed several seconds after irradiation not only in the surface layer adjacent to the ion incorporation band but also through the thickness of the specimen tens of thousands times greater than ion projective ranges. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 73–81, February, 2007.     

Intense formation of intermetallic phases during implantation of aluminum ions in titanium

The results from microstructure and phase composition investigations of titanium in different structural states (with average grain sizes of 0.3 μm, 1.5 μm, and 17 μm) are presented following Al ion implantation using the Mevva-V.RU source (irradiating dose, 10¹⁸ ion/cm²). The implanted multiphase layers are found to form on the base of α-Ti grains. The size, shape, and localization of the formed phases (TiO₂, Ti₂O, TiC, Ti₃Al, Al₃Ti) depend strongly on the grain size of titanium target. It is shown that the nanostructural particles of TiO₂ phase are located mainly on dislocations in the body of target grains. A Ti₂O surface layer is found to arise in titanium with a grain size of 17 μm. It is established that an ordered Ti₃Al phase is located at a depth of more than 200 nm in the implanted layer along the bounaries of the titanium grains.     

Observation of ε′-Ag17 Mg54 phase induced by plasma immersion ion implantation

This paper provides a confirmation of the effectiveness of the recently suggested ab initio approach to the theoretical prediction of phase transformations which may be induced in metallic alloys by metal plasma immersion and ion implantation processing. The approach is based on an assumption that at certain concentrations of the implanted species, the relaxation of the exited electronic state of the implanted structure should be accompanied by the rearrangement of atoms leading to the formation of a new phase. Recently, on the basis of density functional theory calculations of the energetic characteristics of the electronic subsystems of the implanted Mg–Ag system, it was predicted that concentrations of the implanted Ag ions within the range from ～18 to 23 at% Ag, favor transition to the phase ε′-Ag₁₇Mg₅₄. Our transmission electron microscopy observations and electron diffraction analysis of the Mg-based alloy subjected to the implantation of Ag ions at dose of ～5×10¹⁵ ion/cm² confirmed that the formation of the ε′-Ag₁₇Mg₅₄ phase indeed takes place.     

63Cu NMR analysis of microstructure evolution in Al–Cu–Mg alloys

⁶³Cu NMR spectroscopy has been used to detect metastable Guinier–Preston–Bagaryatsky (GPB) zones and nanoscale precipitates of equilibrium S-phase (Al₂CuMg) in dilute alloys of aluminium containing copper and magnesium with compositions which lie in the α?+?S phase field. The GPB zones are observed to form rapidly at room temperature with a time development closely related to the Vickers hardness. The final development of S-phase in the alloy has been confirmed by the observation of a line shape in the alloy identical to that observed in a specimen prepared from stoichiometric Al₂CuMg. Analysis of the hyperfine structure of the ⁶³Cu line shape observed for S-phase shows clearly that two Cu sites are present with approximately equal population. This result suggests that possibly two crystallographically distinct Al₂CuMg phases are present. The addition of small amounts of silver to Al–Cu–Mg alloys in the α?+?θ phase field is known to induce the formation of Ω-phase: a slight distortion of tetragonal θ-phase Al₂Cu. A hyperfine-structured ⁶³Cu line shape assigned to Ω-phase, indicating one distinct Cu site, has been observed in two separate Al–1.7?at.%?Cu–0.33?at.%?Mg alloys containing 0.1 and 0.18?at.%?Ag, but not in the same Al–Cu–Mg alloy without Ag.     

Change of sheet resistance of high purity alumina ceramics implanted by Cu and Ti ions

High purity alumina ceramics (99% Al₂O₃) was implanted by copper ion and titanium ion in a metal vapour vacuum arc (MEVVA) implanter, respectively. The influence of implantation parameters was studied varying ion fluence. The samples were implanted by 68 keV Cu ion and 82 keV Ti ion with fluences from 1 × 10¹⁵ to 1 × 10¹⁸ ions/cm², respectively. The as-implanted samples were investigated by scanning electron microscopy (SEM), glancing X-ray diffraction (GXRD), scanning Auger microscopy (SAM), and four-probe method. Different morphologies were observed on the surfaces of the as-implanted samples and clearly related to implantation parameters. For both ion implantations, the sheet resistances of the alumina samples implanted with Cu and Ti ion fluences of 1 × 10¹⁸ ions/cm², respectively, reached the corresponding minimum values because of the surface metallization. The experimental results indicate that the high-fluence ion implantation resulted in conductive layer on the surface of the as-implanted high purity alumina ceramics.     

磷离子注入速率对4H-SiC(0001)晶格恢复与电阻率降低的影响

高剂量的磷离子注入4H-SiC(0001)晶面，注入速率从1.0×1012到4.0×1012 P+ cm-2s-1变化，而注入剂量固定为2.0×1015 P+ cm-2。室温注入，1500oC的高温下退火。利用光荧光和拉曼谱分析注入产生的晶格损伤以及退火后的残余缺陷。通过霍耳测试来分析注入层的电学性质。基于上述测试结果，发现通过减小磷离子的注入速率，极大地减少了注入层的损伤及缺陷。考虑到室温注入以及相对较低的退火温度(1500 oC)，在注入速率为1.0×1012 P+ cm-2s-1及施主浓度下为4.4×1019 cm-3的条件下，获得了非常低的方块电阻106 Ω/sq。     

Secondary ion and Auger electron emissions from Ar+-ion-sputtered FeAl alloys

Some FeAl alloys, and pure Al and Fe samples, are sputtered in ultrahigh vacuum with Ar⁺ ions between 4 and 15 keV. As previously observed with CuAl alloys, the intensity of the principal Al Auger peak at 63.5 eV is a parabolic function of the Al concentration. Symmetric collisions Al → Al are thus much more efficient for Auger emission from pure aluminium than asymmetric collisions Ar → Al, the proportion of which among effective collisions hardly reaches 20% at 15 keV. Whatever the initial ion energy, the intensities of singly charged atomic secondary ions Al⁺ and Fe⁺, normalized to pure metals, are equal to the atomic concentration of the corresponding elements, whereas the normalized intensities of the multiply charged ions Al²⁺ and Al³⁺ are roughly equal to the square of Al concentration. These results agree with the occurence of two mechanisms in intrinsic ion emission: an electronic excitation process during the separation of the outgoing particle from the target (singly charged ions) and a collisional process from the symmetric collisions Al → Al only, with multiple Auger de-excitation outside the target (multicharged ions of light elements).