Decrease of loss in dielectric properties of TbMnO3 by adding TiO2

Low-frequency (10²-10⁵ Hz) dielectric properties of TbMnO₃+xTiO₂ (x=0.33, 1, 3) ceramic composites, which were fabricated by conventional solid-state reaction, were investigated from 360 to 77 K. Very high dielectric constants and interesting temperature dependence of the dielectric properties were observed in the present composite ceramics. When compared to the high dielectric loss of the polycrystalline TbMnO₃, the loss of TbMnO₃+xTiO₂ (x=0.33, 1, 3) decreased with the increasing TiO₂. Especially for TbMnO₃+1TiO₂, the dielectric loss decreased remarkably, while the dielectric constant was still very high, which are more favorable for practical applications.     

Dielectric properties and temperature stability of BaTiO3 co-doped La2O3 and Tm2O3

The influence of La₂O₃ and Tm₂O₃ co-doping on the dielectric properties and the temperature stability of BaTiO₃ was investigated. BaTiO₃ ceramics were prepared with the compositional formula of (Ba_1−xLa_x)(Ti_1-x/4−yTm_y)O₃. La₂O₃ and Tm₂O₃ co-doping in BaTiO₃ mainly had effects on an increase in the dielectric constant and the temperature stability, respectively. The increase of La₂O₃ concentration and the decrease of Tm₂O₃ concentration in BaTiO₃ resulted in a decrease of lattice parameter and tetragonality because La³⁺ ion substituting for Ba site is smaller than Ba²⁺ ion and Tm³⁺ ion substituting for Ti site is larger than Ti⁴⁺ ion. With the increase of La₂O₃ and the decrease of Tm₂O₃, the dielectric constant of BaTiO₃ was enhanced in spite of the reduction of tetragonality. P-E hysteresis measurements revealed that this phenomenon was based on the improvement of remanent polarization with the increase of La₂O₃ concentration. The introduction of excess Tm₂O₃ in BaTiO₃ suppressed the grain growth and BaTiO₃ ceramics showed higher temperature stability due to the stable tetragonal structure and the small grain size with the increase of Tm₂O₃ concentration.     

Thickness-dependent tunable characteristics of (Ba0.5Sr0.5)0.925K0.075TiO3 thin films prepared by pulsed laser deposition

The thickness-dependent dielectric properties and tunability of pulsed laser deposited (Ba_0.5Sr_0.5)_0.925K_0.075TiO₃ (BSKT) thin films with different thickness ranging from 80 to 300 nm has been investigated. Dielectric properties of the BSKT thin films are substantially improved as the BSKT film thickness increases, which can be explained by the model of a low-permittivity dead layer that is connected in series with the bulk region of the film. The estimated values of thickness and the average dielectric constant for the dead layer are 2.4 nm and 23.5, respectively, in a Pt/BSKT/Pt capacitor structure. The tunability and figure of merit increased with increasing film thickness, which are attributed to the change in lattice parameter and the dead layer effect.     

Al2O3-Y2O3-ZrO2三相复合陶瓷的介电谱研究

采用传统的固相反应法,在1400–1500 ℃下烧结,制备得到Al₂O₃-Y₂O₃-ZrO₂三相复合陶瓷.样品的结构、形貌和电性能分别用X射线衍射(XRD)、扫描电子显微镜(SEM)及介电谱表征.XRD表明此三相复合体系无其他杂相,加入Y₂O₃及ZrO₂后使得Al₂O₃成瓷温度降低;SEM表明此体系晶粒直径为200–500 nm,并且样品随烧结温度的升高而变得更加致密,晶界更加清晰;介电损耗谱中出现峰值弛豫现象,根据Cole-Cole复阻抗谱得出其为非德拜弛豫. 关键词： 2O₃-Y₂O₃-ZrO₂三相陶瓷')" href="#">Al₂O₃-Y₂O₃-ZrO₂三相陶瓷 介电弛豫 阻抗谱 热导率     

Thermally-induced cation disorder in LiFePO4

LiFePO₄ has a fully ordered olivine structure in samples prepared by solid state reaction below ~ 800 °C but, with increasing temperature, a small amount of Li and Fe site exchange occurs reaching a value of about 4% just below melting at 975 °C. The disorder is reversible on annealing at lower temperatures and is detected by changes in lattice parameters and in cation site occupancies obtained by Rietveld refinement of X-ray powder diffraction data.     

Structure and dielectric studies of nano-composite Fe2O3: BaTiO3 prepared by sol-gel method

Nano-structure pure barium titanate (BaTiO₃) and that was doped with iron oxide (Fe₂O₃), have been prepared by sol-gel method, using barium acetate (Ba(Ac)₂) and titanium butoxide (Ti(C₄H₉O)₄), as precursors. The as-grown prepared samples by sol-gel technique were found to be amorphous, which crystallized to the tetragonal phase after synthesized at 750 °C in air for 1 h as detected from the XRD patterns. The XRD data were confirmed by transmission electron microscope (TEM). The dielectric properties namely; dielectric constant (ε′) and loss tangent (tan δ) in the frequency range between 42 Hz and 1 MHz, at range of temperature 25-250 °C were investigated. The temperature dependence of ε′ and tan δ for the undoped and doped materials, at 1 kHz, was also investigated. As a result, tan δ increased rapidly with decreasing temperature below 125 °C (Curie temperature) while above this temperature, tan δ shows temperature independent. As a result, below and above Curie temperature, ferroelectric phase and paraelectric phase of BaTiO₃ can be obtained, respectively.     

Magnetic properties of Nd0.9Dy0.1Fe3(BO3)4

The magnetic properties of trigonal Nd_0.9Dy_0.1Fe₃(BO₃)₄ substituted compound with the competitive Nd-Fe and Dy-Fe exchange interactions have been investigated. It has been shown that in Nd_0.9Dy_0.1Fe₃(BO₃)₄ a spontaneous spin-reorientation transition from an ease-axis state to an easy-plane occurs near 8 K. Anomalies of the magnetization curves are observed in a spin-flop transition induced by the magnetic field B‖c. The calculations were performed using a molecular-field approximation and a crystal-field model for the rare-earth subsystem. Extensive experimental data on the magnetic properties of Nd_0.9Dy_0.1Fe₃(BO₃)₄ have been interpreted and good agreement between theory and experiment has been achieved using the obtained theoretical dependences.     

Complex impedance spectroscopic studies of Ba(Pr1/2Ta1/2)O3 ceramic

The polycrystalline sample of Ba(Pr_1/2Ta_1/2)O₃ was prepared by a high-temperature solid-state reaction technique. The crystal symmetry, space group and unit cell dimensions were derived from the experimental results using FullProf software. XRD analysis of the compound indicated the formation of a single-phase tetragonal structure with the space group P4/mmm (1 2 3). Impedance and electric modulus analysis were used as tools to analyze the electrical behavior of the sample as a function of frequency at different temperatures. The impedance analysis of the compound indicated a typical negative temperature coefficient of resistance behavior, and dielectric relaxation was found to be of non-Debye type. The frequency dependent maximum of the imaginary part of the electric modulus follows the Arrhenius law with activation energy of 0.15 eV. The ac conductivity data obeys double power law.     

A comparative study of electronic structure and magnetic properties of SrCrO3 and SrMoO3

A comparative study of electronic structure and magnetic properties of SrCrO₃ and SrMoO₃ has been carried out using FPLAPW method with density-functional theory. The calculated results suggest that both compounds are nonmagnetic (NM) metal in cubic structures at room temperature, and they exhibit very similar band structure and electronic properties except more extend Mo 4d orbitals than Cr 3d electronic states. However, the electronic structure and magnetic properties exhibit remarkable differences between them in the low temperature phases. SrCrO₃ is with a C-AFM ground state with magnetic moment of 1.18μ_B/Cr in the tetragonal structure, while SrMoO₃ is with a NM ground state in the orthorhombic structure. It is assumed that the extend 4d orbitals may be the reason which results in NM solution at low temperature phase of SrMoO₃.     

Ce$lt;sup$gt;3+$lt;/sup$gt;在LiBaBO$lt;sub$gt;3$lt;/sub$gt;中的发光特性及晶体学格位

采用固相法制备了LiBaBO₃：Ce³⁺发光材料.测得LiBaBO₃：Ce³⁺材料的发射光谱为一不对称的单峰宽谱,主峰位于440 nm;监测440 nm发射峰,可得其激发光谱为一主峰位于370 nm的宽谱.利用van Uitert公式计算了Ce³⁺取代LiBaBO₃中Ba²⁺时所占晶体学格位,得出438 nm发射带归属于九配位的Ce³⁺发射,而469 nm发射带起源于八配位的Ce³⁺发射.研究了Ce³⁺浓度对LiBaBO₃：Ce³⁺材料发光强度的影响,结果显示,随Ce³⁺浓度的增大,发光强度呈现先增大后减小的趋势,Ce³⁺浓度为3mol%时强度最大,造成其浓度猝灭的原因为电偶极-偶极相互作用.引入Li⁺,Na⁺或K⁺可增强LiBaBO₃：Ce³⁺材料的发射强度.利用InGaN管芯（370 nm）激发LiBaBO₃：Ce³⁺材料,获得了很好的蓝白光发射,色坐标为（x=0.291,y=0.297）. 关键词： 白光发光二极管 3：Ce³⁺')" href="#">LiBaBO₃：Ce³⁺ 晶体学格位 发光特性     

Improving microwave dielectric properties of La2.98/3Sr0.01(Mg0.5Sn0.5)O3 ceramics with CuO additive

The microwave dielectric properties of CuO-doped La_2.98/3Sr_0.01(Mg_0.5Sn_0.5)O₃ ceramics were investigated with a view to their application in microwave devices. CuO-doped La_2.98/3Sr_0.01(Mg_0.5Sn_0.5)O₃ ceramics were prepared by the conventional solid-state method. The X-ray diffraction patterns of CuO-doped La_2.98/3Sr_0.01(Mg_0.5Sn_0.5)O₃ ceramics exhibited no significant variation of phase with sintering temperature. By adding 0.75 wt.% CuO, a dielectric constant of 20.07, a quality factor (Q × f) of 63,000 GHz, and a temperature coefficient of resonant frequency τ_f (−77.0 ppm/°C) were obtained when La_2.98/3Sr_0.01(Mg_0.5Sn_0.5)O₃ ceramics were sintered at 1500 °C for 4 h.     

Laser synthesis of thin layers of In4Se3, In4Te3 and modification of their structure and characteristics

Trends of structural modifications and phase composition occurring in In₄Se₃ thin films and In₄Se₃-In₄Te₃ epitaxial heterojunctions under laser irradiations have been investigated. Dynamics of the layer structure modification, depending on laser modes, i.e. pulse duration τ = 2-4 ms, irradiation intensity I₀ = 10-50 kW/cm², number of pulses N = 5-50, was studied by electron microscopy. An increase in laser influence promotes enlargement of the layer grains and transformation of their polycrystalline structure towards higher degree of stoichiometry. As a result of laser solid restructuring heterojunctions of In₄Se₃-In₄Te₃, being photosensitive within 1.0-2.0 μm and showing fast time of response, have been obtained. Laser modification of structure enables one to optimize electrical and optical properties of functional elements on the base of thin films and layers of In₄Se₃, In₄Te₃, widely used as infrared detectors and filters.     

Chemical quenching of positronium in Fe2O3/Al2O3 catalysts

Fe₂O₃/Al₂O₃ catalysts were prepared by solid state reaction method using α-Fe₂O₃ and γ-Al₂O₃ nano powders. The microstructure and surface properties of the catalyst were studied using positron lifetime and coincidence Doppler broadening annihilation radiation measurements. The positron lifetime spectrum shows four components. The two long lifetimes τ₃ and τ₄ are attributed to positronium annihilation in two types of pores distributed inside Al₂O₃ grain and between the grains, respectively. With increasing Fe₂O₃ content from 3 wt% to 40 wt%, the lifetime τ₃ keeps nearly unchanged, while the longest lifetime τ₄ shows decrease from 96 ns to 64 ns. Its intensity decreases drastically from 24% to less than 8%. The Doppler broadening S parameter shows also a continuous decrease. Further analysis of the Doppler broadening spectra reveals a decrease in the p-Ps intensity with increasing Fe₂O₃ content, which rules out the possibility of spin-conversion of positronium. Therefore the decrease of τ₄ is most probably due to the chemical quenching reaction of positronium with Fe ions on the surface of the large pores.     

The electrical properties of dielectric stacks of SiO2 and Al2O3 prepared by atomic layer deposition method

We produced dielectric stacks composed of ALD SiO₂ and ALD Al₂O₃, such as SiO₂/Al₂O₃, Al₂O₃/SiO₂, and SiO₂/Al₂O₃/SiO₂, and measured the leakage currents through the stacks in comparison with those of the single oxide layers. SiO₂/Al₂O₃ shows lowest leakage current for negative bias region below 6.4 V, and Al₂O₃/SiO₂ showed highest current under negative biases below 4.5 V. Two distinct electron conduction regimes are observed for Al₂O₃ and SiO₂/Al₂O₃. Poole-Frenkel emission is dominant at the high-voltage regime for both dielectrics, whereas the direct tunneling through the dielectric is dominant at the low-voltage regime. The calculated transition voltage between two regimes for SiO₂ (6.5 nm)/Al₂O₃ (12.6 nm) is −6.4 V, which agrees well with the experimental observation (−6.1 V). For the same EOT of entire dielectric stack, the transition voltage between two regimes decreases with thinner SiO₂ layer.     

Fabrication of porous BaSnO3 hollow architectures using BaCO3@SnO2 core-shell nanorods as precursors

We present a strategy to synthesize porous BaSnO₃ hollow architectures with that were 150-300 nm in diameter and 1.5-5 μm in length using precursor of BaCO₃@SnO₂ nanorods prepared by hydrothermal treatment. BaCO₃@SnO₂ nanorods, consisting of a BaCO₃ core and a SnO₂ shell, could be used effectively for the solid-state synthesis of polycrystalline BaSnO₃ powder at 800 °C (lower than convention for BaCO₃ and SnO₂ mixtures). The core/shell structure of the precursor could play a role as a structural directing template for preparing BaSnO₃ hollow architectures during the calcination process. The X-ray diffractometer (XRD), scanning electron microscope (SEM), and transmission electron microscope (TEM) are employed to characterize the structures and morphologies. When applied to DSSC, the porous BaSnO₃ hollow architectures exhibit distinct photovoltaic effect.     

Thermoluminescence characteristics of rare-earth-doped LiCaBO3 phosphor

LiCaBO₃ was synthesized by high-temperature solid-state reaction. The influence of different rare earth dopants, i.e. Dy³⁺, Tb³⁺, Tm³⁺ and Ce³⁺, on thermoluminescence (TL) of LiCaBO₃ phosphor was discussed. We studied the TL properties and some dosimetric characteristics of Ce³⁺-activated LiCaBO₃ phosphor in detail. The effect of the concentration of Ce³⁺ on TL was investigated, the result of which showed that the optimum Ce³⁺ concentration was 1 mol%. The TL kinetic parameters of LiCaBO₃:0.01Ce³⁺ were studied by computer glow curve deconvolution (CGCD) method. The three-dimensional (3D) TL emission spectra were also studied, peaking at 431 and 474 nm due to the characteristic transition of Ce³⁺. We also studied the linearity, annealing condition, reproducibility, fading and different heating rate of the LiCaBO₃:0.01Ce³⁺ phosphor.     

Influence of postdeposition annealing on structural properties and electrical characteristics of thin Tm2O3 and Tm2Ti2O7 dielectrics

We describe the structural properties and electrical characteristics of thin thulium oxide (Tm₂O₃) and thulium titanium oxide (Tm₂Ti₂O₇) as gate dielectrics deposited on silicon substrates through reactive sputtering. The structural and morphological features of these films were explored by X-ray diffraction, X-ray photoelectron spectroscopy, secondary ion mass spectrometry, and atomic force microscopy, measurements. It is found that the Tm₂Ti₂O₇ film annealed at 800 °C exhibited a thinner capacitance equivalent thickness of 19.8 Å, a lower interface trap density of 8.37 × 10¹¹ eV⁻¹ cm⁻², and a smaller hysteresis voltage of ∼4 mV than the other conditions. We attribute this behavior to the Ti incorporated into the Tm₂O₃ film improving the interfacial layer and the surface roughness. This film also shows negligible degrees of charge trapping at high electric field stress.     

Luminescence of La3F3[Si3O9]:Ce

The luminescence properties of Ce³⁺ in La₃F₃[Si₃O₉] are reported. Excitation and emission bands corresponding to 4f¹→5d¹ transitions of Ce³⁺ were identified. The center of gravity of the 5d states lies at remarkable high energy (43.2×10³ cm⁻¹) for Ce³⁺ in a silicate compound. This high value is attributed to the combined oxygen/fluoride coordination of the Ce³⁺ ion. Emission from the lowest 4f5d level to the ²F_5/2 and ²F_7/2 levels was found at 32.4×10³ and 30.4×10³ cm⁻¹. These results are compared with literature data on silicates and fluorides. From the values found for Ce³⁺, predictions are made for the positions of the 4f5d bands of Pr³⁺ and Er³⁺ in La₃F₃[Si₃O₉]. For both ions, it is concluded that in this host lattice emission is expected from high lying 4fⁿ energy levels.     

High-resolution FTIR spectroscopy of the 3ν2 band of PH3

High-resolution Fourier transform spectrum of phosphine (PH₃) at room temperature has been recorded in the region of the 3ν₂ band (2730-3100 cm⁻¹) at an apodized resolution of 0.005 cm⁻¹. About 200 vibration-rotation transitions have been least squares fitted with an rms of 0.00039 cm⁻¹ after taking into account the ΔK = ±3 interaction.     

Cr3+掺杂的Cd3Al2Ge3O12光谱特性及晶场参数计算

采用高温固相法合成了Cd₃Al₂Ge₃O₁₂：Cr³⁺多晶材料,利用X射线衍射对其结构进行了分析,通过Cr³⁺的室温吸收光谱、室温和77K发射光谱分别对其光谱特性和晶场参数进行了分析和计算.结果表明：在450 nm的蓝光激发下,Cd₃Al₂Ge₃O₁₂：Cr³⁺室温发 关键词： 3Al₂Ge₃O₁₂：Cr³⁺')" href="#">Cd₃Al₂Ge₃O₁₂：Cr³⁺ 荧光光谱 晶场参数 可调谐激光