Oxidation of graphene on Ru(0 0 0 1) studied by scanning tunneling microscopy

The oxidation of graphene layer on Ru(0 0 0 1) has been investigated by means of scanning tunneling microscopy. Graphene overlayer can be formed by decomposing ethyne on Ru(0 0 0 1) at a temperature of about 1000 K. The lattice mismatch between the graphene overlayer and the substrate causes a moiré pattern with a superstructure in a periodicity of about 30 Å. The oxidation of graphene/Ru(0 0 0 1) was performed by exposure the sample to O₂ gas at 823 K. The results showed that, at the initial stage, the oxygen intercalation between the graphene and the Ru(0 0 0 1) substrate takes place at step edges, and extends on the lower steps. The oxygen intercalation decouples the graphene layer from the Ru(0 0 0 1) substrate. More oxygen intercalation yields wrinkled bumps on the graphene surface. The oxidation of graphene, or the removal of carbon atoms can be attributed to a process of the combination of the carbon atoms with atomic oxygen to form volatile reaction products. Finally, the Ru(0 0 0 1)-(2 × 1)O phase was observed after the graphene layer is fully removed by oxidation.     

Crystal chemistry of layered carbide, Ti3(Si0.43Ge0.57)C2

 The crystal structure of a layered ternary carbide, Ti₃(Si_0.43Ge_0.57)C₂, was studied with single-crystal X-ray diffraction. The compound has a hexagonal symmetry with space group P6₃/mmc and unit-cell parameters a=3.0823(1) Å, c=17.7702(6) Å, and V=146.21(1) Å³. The Si and Ge atoms in the structure occupy the same crystallographic site surrounded by six Ti atoms at an average distance of 2.7219 Å, and the C atoms are octahedrally coordinated by two types of symmetrically distinct Ti atoms, with an average C-Ti distance of 2.1429 Å. The atomic displacement parameters for C and Ti are relatively isotropic, whereas those for A (=0.43Si+0.57Ge) are appreciably anisotropic, with U₁₁ (=U₂₂) being about three times greater than U₃₃. Compared to Ti₃SiC₂, the substitution of Ge for Si results in an increase in both A-Ti and C-Ti bond distances. An electron density analysis based on the refined structure shows that each A atom is bonded to 6Ti atoms as well as to its 6 nearest neighbor A site atoms, whether the site is occupied by Si or Ge, suggesting that these bond paths may be significantly involved with electron transport properties.     

Study on the adsorption of fluorescein on Ag(1 1 0) substrate

The adsorption of fluorescein on the Ag(1 1 0) surface has been investigated by the first-principles pseudopotential method. Various adsorption geometries have been calculated and the energetically most favorable structure of fluorescein/Ag(1 1 0) was identified. The fluorescein molecule, in most favorable structure, is on hollow site, and the adsorption energy is 2.34 eV. Here the adsorption sites refer to the positions at the first layer of the substrate where the middle carbon atom of the fluorescein molecule is located. The bonding strength of the fluorescein molecule to the Ag substrate is site selective, being determined by electron transfer to the oxygen atoms of the molecule and local electrostatic attraction between the oxygen atoms and the silver atoms.     

Stable forms of two-dimensional crystals and graphene

We show that the “two-dimensional” graphene is stable due to transverse short-range displacements of carbon atoms, which may be described in a framework of Ising model with competing interactions. When temperature decreases, two transitions, high temperature disorder into order and order into low-temperature glass, arise. The graphene looks like a microscopic “washboard” with the wavelength of about 2–4 Å. Due to up–down asymmetry of the lattice distortions in graphene on substrate, a mini-bandgap arises. This leads to many new phenomena: a rectification of AC current induced by microwave or infrared radiation, the existence of self-trapping and a new type of fermionic mini-exciton-polaritons.     

Atomic structure of Cs layer grown on Si(0 0 1)(2 × 1) surface at room temperature

The atomic structure of Cs atoms adsorbed on the Si(0 0 1)(2 × 1) surface has been investigated by coaxial impact collision ion scattering spectroscopy. When 0.5 ML of Cs atoms are adsorbed on Si(0 0 1) at room temperature, it is found that Cs atoms occupy a single absorption site on T3 with a height of 3.18 ± 0.05 Å from the second layer of Si(0 0 1)(2 × 1) surface, and the bond length between Cs and the nearest Si atoms is 3.71 ± 0.05 Å.     

Corner hole adatom stacking fault structure of Bi on Au(1 1 1)

The surface atomic structure of Bi on Au(1 1 1) is studied with scanning tunneling microscopy. At about 0.5 monolayer of Bi, a well-ordered 6 × 6 atomic structure is observed. The structure has three notable features: corner holes, Bi adatoms, and stacking faults, very similar to a semiconductor surface of Si(1 1 1)-7 × 7. Out of 18 Bi surface atoms in a unit cell, six atoms are at hollow sites and are adatoms, and another six atoms are near-bridge sites. The last six atoms surround corner holes and are lower than other surface atoms by about 0.2 Å. A possible atomic model is proposed based on our observation.     

Ultrathin nickel oxide films grown on Ag(0 0 1): a study by XPS, LEIS and LEED intensity analysis

The structure of a nickel oxide film 2 ML thick has been investigated by LEED intensity analysis. The NiO film was prepared by evaporating Ni in presence of O₂ at a pressure in the 10⁻⁶ mbar range. The growth of the oxide film was followed by XPS, LEIS and LEED. In the early stages of deposition, the film shows a (2 × 1) superstructure in LEED. After deposition of 2 ML of NiO, a sharp (1 × 1) LEED pattern is observed. The intensity versus electron energy curves of the LEED spots were measured for this NiO(1 × 1) film and analysed by means of the tensor LEED method. A good level of agreement of the experimental LEED intensities with those calculated for a pseudomorphic NiO(0 0 1) film was obtained. We found that oxygen atoms at the oxide-substrate interface are on-top silver atoms. The interlayer distance in the oxide does not differ significantly from that in bulk NiO(0 0 1), within the accuracy of the analysis. An outward displacement (0.05 ± 0.05 Å) of oxygen atoms with respect to nickel atoms was found at the oxide film surface. The interlayer distance at the silver-nickel oxide interface is 2.43 ± 0.05 Å.     

Determination of a (4 × 4) structure formed on a Cu(0 0 1) surface by adsorption of calcium

The adsorption of calcium (Ca) atoms on a Cu(0 0 1) surface has been studied by low-energy electron diffraction (LEED) at 130, 300 and 400 K. It is found that a (4 × 4) was the only LEED pattern appeared at 400 K while a quasi-hexagonal structure was formed in a wide range of submonolayer coverage at 130 K. At 300 K, the (4 × 4) LEED spots were broad and weak. The (4 × 4) structure formed at 400 K was determined by a tensor LEED I-V analysis. It is a new-type of surface alloys consisting of five substitutional Ca atoms, nine surface Cu atoms, and two atomic vacancies in the unit cell. In spite of a quite large size-difference between Ca (3.94 Å) and Cu (2.55 Å) atoms, all Ca atoms are located at the substitutional sites. Among surface alloys so far reported, the atomic size ratio between Cu and Ca in the (4 × 4), 1.54, is the largest. Optimized structural parameters reveal that large lateral displacements of surface Cu atoms, being enabled by the appearance of the vacancies, allow the formation of the (4 × 4) structure.     

Structure of rutile TiO2 (1 1 0) in water and 1 molal Rb at pH 12: Inter-relationship among surface charge, interfacial hydration structure, and substrate structural displacements

The rutile (1 1 0)-aqueous solution interface structure was measured in deionized water (DIW) and 1 molal (m) RbCl + RbOH solution (pH 12) at 25 °C with the X-ray crystal truncation rod method. The rutile surface in both solutions consists of a stoichiometric (1 × 1) surface unit mesh with the surface terminated by bridging oxygen (BO) and terminal oxygen (TO) sites, with a mixture of water molecules and hydroxyl groups (OH⁻) occupying the TO sites. An additional hydration layer is observed above the TO site, with three distinct water adsorption sites each having well-defined vertical and lateral locations. Rb⁺ specifically adsorbs at the tetradentate site between the TO and BO sites, replacing one of the adsorbed water molecules at the interface. There is no further ordered water structure observed above the hydration layer. Structural displacements of atoms at the oxide surface are sensitive to the solution composition. Ti atom displacements from their bulk lattice positions, as large as 0.05 Å at the rutile (1 1 0)-DIW interface, decay in magnitude into the crystal with significant relaxations that are observable down to the fourth Ti-layer below the surface. A systematic outward shift was observed for Ti atom locations below the BO rows, while a systematic inward displacement was found for Ti atoms below the TO rows. The Ti displacements were mostly reduced in contact with the RbCl solution at pH 12, with no statistically significant relaxations in the fourth layer Ti atoms. The distance between the surface 5-fold Ti atoms and the oxygen atoms of the TO site is 2.13 ± 0.03 Å in DIW and 2.05 ± 0.03 Å in the Rb⁺ solution, suggesting molecular adsorption of water at the TO site to the rutile (1 1 0) surface in DIW, while at pH 12, adsorption at the TO site is primarily in the form of an adsorbed hydroxyl group.     

Dissociation of water molecule at three-fold oxygen coordinated V site on the InVO4 (0 0 1) surface

Water molecule adsorption properties at the surface of InVO₄ have been investigated using an ab initio molecular dynamics approach. It was found that the water molecules were adsorbed dissociatively to the three-fold oxygen coordinated V sites on the (0 0 1) surface. The dissociative adsorption energy was estimated to be 0.8-0.9 eV per molecule. The equilibrium distance between V and O of the hydroxyl -OH was almost the same as the V-O distance of tetrahedra VO₄ in the InVO₄ bulk crystal (1.7-1.8 Å).     

First-principles calculations of hydrogen molecule adsorption on Ti (0 0 0 1)-(2 × 1) surface

Adsorption of H₂ molecule on the Ti (0 0 0 1)-(2 × 1) surface was studied by density functional theory with generalized gradient approximation (GGA). The parallel and vertical absorption cases were investigated in detail by adsorption energy and electronic structure analysis, we obtained three stable configurations of FCC-FCC (the two H atoms adsorption on the two adjacent fcc sites of Ti (0 0 0 1) surface, respectively), HCP-HCP (the two H atoms adsorption on the two adjacent hcp sites of Ti (0 0 0 1) surface, respectively) and FCC-HCP (the one H atom adsorption on the fcc site and the other adsorption on the near hcp site) based on the six different parallel adsorption sites after the H₂ molecule dissociates. However, all the end configurations of four vertical adsorption sites were unstable, H₂ molecule was very easy to desorb from Ti surface. The H-H bond breaking and Ti-H bond forming result from the H₂ molecule dissociation. H-H bond breaking length ranges from 1.9 Å to 2.3 Å for different adsorption configurations due to the strong Ti-H bond forming. The H₂ dissociative approach and the end stable configurations formation in parallel adsorption processes are attributed to the quantum mechanics steering effects.     

A density-functional study on the atomic geometry and adsorption of the Cu(1 0 0) c(2 × 2)/N Surface

In this work we have performed total-energy calculations on the geometric structure and adsorption properties of Cu(1 0 0) c(2 × 2)/N surface by using the density-functional theory and the projector-augmented wave method. It is concluded that nitrogen atom was adsorbed on a FFH site with a vertical distance of 0.2 Å towards from surface Cu layer. The bond length of the shortest Cu-N bonding is calculated to be 1.83 Å. Geometry optimization calculations exclude out the possibilities of adsorbate induced reconstruction mode suggested by Driver and Woodruff and the atop structural model. The calculated workfunction for this absorbate-adsorbent system is 4.63 eV which is quite close to that of a clean Cu(1 0 0) surface. The total-energy calculations showed that the average adsorption energy per nitrogen in the case of Cu(1 0 0) c(2 × 2)-N is about 4.88 eV with respect to an isolated N atom. The absorption of nitrogen on Cu(1 0 0) surface yields the hybridization between surface Cu atoms and N, and generates the localized surface states at −1.0 eV relative to Fermi energy E_F. The stretch mode of the adsorbed nitrogen at FFH site is about 30.8 meV. The present study provides a strong criterion to account for the local surface geometry in Cu(1 0 0) c(2 × 2)/N surface.     

Chlorine chemisorption on Cu(0 0 1) by surface X-ray diffraction: Geometry and substrate relaxation

We report on the precise location of Cl atoms chemisorbed on a Cu(0 0 1) surface and the interlayer relaxations of the metal surface. Previous studies have shown that chlorine dissociates on Cu(0 0 1) to form a c(2 × 2) chemisorbed layer with Cl atoms occupying four-fold hollow sites. A Cu-Cl interlayer spacing of 1.60 Å and a slightly expanded Cu-Cu first interlayer spacing of 1.85 Å (1.807 Å for bulk Cu) was determined by LEED. The resulting Cu-Cl bond length, 2.41 Å, is very similar to the SEXAFS value of 2.37 Å. Contradictory results were obtained by angle-resolved photoemission extended fine structure: while confirming the Cu-Cl interlayer spacing of 1.60 Å, no first Cu-Cu interlayer relaxation has been observed. On the other hand, a small corrugation of the second Cu layer was pointed out. We carried out a detailed structural determination of the Cu(0 0 1)-c(2 × 2)-Cl system using surface X-ray diffraction technique with synchrotron radiation. We find a Cu-Cl interlayer spacing of 1.584(5) Å and confirm the expansion of the first Cu-Cu interlayer, with an average spacing of 1.840(5) Å. In addition, we observe a small corrugation of the second Cu layer, with Cu atoms just below Cl atoms more tightly bound to the surface layer, and even a second Cu-Cu interlayer expansion.     

A density functional study of atomic oxygen and water molecule adsorption on Ni(1 1 1) and chromium-substituted Ni(1 1 1) surfaces

Density functional theory (DFT) for generalized gradient approximation calculations has been used to study the adsorption of atomic oxygen and water molecules on Ni(1 1 1) and different kind of Ni-Cr(1 1 1) surfaces. The fcc hollow site is energetically the most favorable for atomic oxygen adsorption and on top site is favorable for water adsorption. The Ni-Cr surface has the highest absorption energy for oxygen at 6.86 eV, followed by the hcp site, whereas the absorption energy is 5.56 eV for the Ni surface. The Ni-O bond distance is 1.85 Å for the Ni surface. On the other hand, the result concerning the Ni-Cr surface implies that the bond distances are 1.93-1.95 Å and 1.75 Å for Ni-O and Cr-O, respectively. The surface adsorption energy for water on top site for two Cr atom substituted Ni-Cr surface is 0.85 eV. Oxygen atoms prefer to bond with Cr rather than Ni atoms. Atomic charge analysis demonstrates that charge transfer increases due to the addition of Cr. Moreover, a local density of states (LDOS) study examines the hybridization occurring between the metal d orbital and the oxygen p orbital; the bonding is mainly ionic, and water bonds weakly in both cases.     

Local structure and electronic properties of BaTaO2N with perovskite-type structure

First-principles calculation based on density-functional theory in the pseudo-potential approach have been performed for the total energy and crystal structure of BaTaO₂N. The calculations indicate a random occupation of the anionic positions by O and N in a cubic structure, in agreement with neutron diffraction measurements and infrared spectra. The local symmetry in the crystal is broken, maintaining a space group Pm3?m, as used in structure refinement, which represents only the statistically averaged result. The calculations also indicate displacive disordering in the crystal. The average Ta-N distance is smaller (2.003 Å), while the average Ta-O distance becomes larger (2.089 Å). The local relaxation of the atoms has an influence on the electronic structure, especially on the energy gap. BaTaO₂N is calculated to be a semiconductor with an energy gap of about 0.5 eV. The upper part of the valence band is dominated by N 2p states, while O 2p states are mainly in the lower part. The conduction band is dominated by Ta 5d states.     

A DFT study of formaldehyde adsorption on functionalized graphene nanoribbons

Density functional theory (DFT) based ab initio calculations were done to monitor the formaldehyde (CHOH) adsorptive behavior on pristine and Ni-decorated graphene sheet. Structural optimization indicates that the formaldehyde molecule is physisorbed on the pristine sheet via partly weak van der Waals attraction having the adsorption energy of about −15.7 kcal/mol. Metal decorated sheet is able to interact with the CHOH molecule, so that single Ni atoms prefer to bind strongly at the bridge site of graphene and each metal atom bound on sheet may adsorb up to four CHOH. The findings also show that the Ni decoration on graphene surface results in some changes in electronic properties of the sheet and its E_g is remained unchanged after adsorption of CHOH molecules. It is noteworthy to say that no bond cleavage was observed for the adsorption of CHOH on Ni-decorated graphene.     

Structural study of Si(1 1 1)-6 × 1-Ag surface using surface X-ray diffraction

The surface structure of Si(1 1 1)-6 × 1-Ag was investigated using surface X-ray diffraction techniques. By analyzing the CTR scattering intensities along 00 rod, the positions of the Ag and reconstructed Si atoms perpendicular to the surface were determined. The results agreed well with the HCC model proposed for a 3 × 1 structure induced by alkali-metals on a Si(1 1 1) substrate. The heights of the surface Ag and Si atoms did not move when the surface structure changed from Si(1 1 1)-√3 × √3-Ag to Si(1 1 1)-6 × 1-Ag by the desorption of the Ag atoms. From the GIXD measurement, the in-plane arrangement of the surface Ag atoms was determined. The results indicate that the Ag atoms move large distances at the phase transition between the 6 × 1 and 3 × 1 structures.     

Structural property of CsCl-type sodium chloride under pressure

The structure and equation of state of CsCl-type sodium chloride have been determined using high-pressure powder X-ray diffraction from 32 to 134 GPa. The CsCl-type phase remains stable over this entire pressure range. Pressure-volume data can be fitted with a Vinet equation of state with K_30 GPa=135.1 GPa, K′_30 GPa=3.9, and V_30 GPa=27.70 Å³. The nearest-neighbour distance between sodium and chlorine atoms decreased as pressure increased. Significant discrepancies of nearest-neighbour distance between previous theoretical predictions and this study were observed at pressures higher than 70 GPa.     

Surface structure of In/Si(1 1 1) studied by reflection high-energy positron diffraction

We have investigated a quasi-one-dimensional structure of In/Si(1 1 1) surface using reflection high-energy positron diffraction (RHEPD), which is sensitive to the topmost surface structure under the total reflection condition. From the rocking curves, we found that In atoms are located at two different vertical positions, i.e., 0.99 Å and 0.55 Å from the Si zigzag chain in both 4 × 1 (210 K) and 8 × 2 (60 K) phases.