On the power-law behavior of the AC conductivity of the mixed crystal (NH4)3H(SO4)1.42(SeO4)0.58

A power law used to describe the AC conductivity from 299 to 393 K of the mixed crystal (NH₄)₃H(SO₄)_1.42(SeO₄)_0.58 led to fractional exponent values ranging from 1.08 to 0.91, depending on structural changes induced on temperature variation [B. Louati, M. Gargouri, K. Guidara and T. Mhiri, J. Phys. Chem. Solids 66 (2005) 762]. In the present note, we suggest that the fractional law exhibits features of lattice relaxation. Despite the structural changes, the parameters of the power law are mutually interconnected to yield a temperature independent phenomenon. Such behavior is probably of general validity and characterizes the universal fractional dispersion of the AC conductivity, as it was also observed in glasses of different composition.     

Frequency dependence of ionic conductivity and dielectric relaxation studies in Na3H(SO4)2 single crystal

Electrical impedance measurements of Na₃H(SO₄)₂ were performed as a function of both temperature and frequency. The electrical conductivity and dielectric relaxation have been evaluated. The temperature dependence of electrical conductivity reveals that the sample crystals transformed to the fast ionic state in the high temperature phase. The dynamical disordering of hydrogen and sodium atoms and the orientation of SO₄ tetrahedra results in fast ionic conductivity. In addition to the proton conduction, the possibility of a Na⁺ contribution to the conductivity in the high temperature phase is proposed. The frequency dependence of AC conductivity is proportional to ω^s. The value of the exponent, s, lies between 0.85 and 0.46 in the room temperature phase, whereas it remains almost constant, 0.6, in the high-temperature phase. The dielectric dispersion is examined using the modulus formalism. An Arrhenius-type behavior is observed when the crystal undergoes the structural phase transition.     

Stretched exponential relaxation and dispersive conductivity behavior in lithium bismuth silicate glasses

Glasses having compositions xLi₂O∙(85 − x)Bi₂O₃∙15SiO₂ (x = 35, 40, and 45 mol%) were prepared by normal melt quenching technique. Electrical relaxation and conductivity in these glasses were studied using impedance spectroscopy in the frequency range from 20 Hz to 1 MHz and in the temperature range from 453 to 603 K. The ac and dc conductivities, activation energy of the dc conductivity and relaxation frequency were extracted from the impedance spectra. The dc conductivity increases with increase in Li₂O content providing modified glass structure and large number of mobile lithium ions. Similar values of activation energy for dc conduction and for conductivity relaxation time indicate that the ions overcome the same energy barrier while conducting and relaxing. The non-exponential character of relaxation processes increases with decrease in stretched exponential parameter ‘β’ as the composition parameter ‘x’ increases. The observed conductivity spectra follow a power law with exponent ‘s’ which increases regularly with frequency and approaches unity at higher frequencies. Nearly constant losses (NCL) characterize this linearly dependent region of the conductivity spectra. A deviation from the ‘master curve’ for various isotherms of conductivity spectra was also observed in the high-frequency region and at low temperatures, which supports the existence of different dynamic processes like NCL in addition to the ion hopping processes in the investigated glass system.     

Electrical relaxation studies of olivine type nanocrystalline LiMPO4 (M=Ni,Mn and Co) materials

The olivine type LiMPO₄ (M=Ni, Mn and Co) materials were synthesized by solution combustion technique using glycine as fuel. The structural characterizations were explored to confirm the phase formation of materials. The scanning electron microscope was used to identify the morphology of olivine materials. The local structure and chemical bonding between MO₆ octahedral and (PO₄)^3- tetrahedral groups were probed by Raman spectroscopy. Grain and grain boundaries were contributed for ion relaxation and dc conduction in olivine materials. Two orders of enhancement in ionic conductivity was observed in these olivine materials than the reported value. Among all the explored olivine samples, LiMnPO₄ showed highest enhancement in conductivity due to weak Li–O bonding and largest unit cell volume.     

Dielectric relaxation and ac conductivity of sodium tungsten phosphate glasses

Studies of dielectric relaxation and ac conductivity have been made on three samples of sodium tungsten phosphate glasses over a temperature range of 77–420 K. Complex relative permitivity data have been analyzed using dielectric modulus approach. Conductivity relaxation frequency increases with the increase of temperature. Activation energy for conductivity relaxation has also been evaluated. Measured ac conductivity (σ_m(ω)) has been found to be higher than σ_dc at low temperatures whereas at high temperature σ_m(ω) becomes equal to σ_dc at all frequencies. The ac conductivity obeys the relation σ_ac(ω)=Aω ^S over a considerable range of low temperatures. Values of exponent S are nearly equal to unity at about 78 K and the values decrease non-linearly with the increase of temperature. Values of the number density of states at Fermi level (N(E _F)) have been evaluated at 80 K assuming values of electron wave function decay constant α to be 0.5 (Å)^?1. Values of N(E _F) have the order 10²⁰ which are well within the range suggested for localized states. Present values of N(E _F) are smaller than those for tungsten phosphate glasses.     

Crystal structure,dielectric and piezoelectric properties of Ta/W codoped Bi3TiNbO9 Aurivillius phase ceramics

Aurivillius phase Bi₃Ti_1−xTa_xNb_1−xW_xO₁₂ high temperature piezoceramics were prepared by a conventional solid state reaction method. The crystal structure, dielectric, electrical conduction and piezoelectric properties were systematically studied. Pure or modified Bi₃TiNbO₉ ceramics revealed the presence of only two-layered Aurivillius phase, indicating that Ta/W doping entered into the B-site of pseudo-perovskite structure and formed solid solutions. The Curie temperature had a strong reliance on the structural distortion. Furthermore, Ta/W dopants act as a donor doping, decrease the number of oxygen vacancies and facilitate the domain wall motion. As a result, Ta/W modifications significantly increase the DC resistivity and piezoelectric properties. Bi₃Ti_0.98Ta_0.02Nb_0.98W_0.02O₁₂ ceramics possess the optimum d₃₃ value (∼12.5 pC/N) together with a high T_C point (∼893 °C). Moreover, the resonance–antiresonance spectra demonstrate that the Ta/W-BTN ceramics are indeed piezoelectric in nature at 600 °C. The d₃₃ value of BTTNW-2 ceramic remains ∼12.2 pC/N after annealing at 700 °C. These factors suggest that the BTTNW-based ceramic is a promising candidate for ultra-high temperature sensor applications.     

Dielectric properties and fluctuating relaxation processes of poly(methyl methacrylate) based polymeric nanocomposite electrolytes

Solid polymer nanocomposite electrolytes (SPNEs) consisted of poly(methyl methacrylate) (PMMA) and lithium perchlorate (LiClO₄) of molar ratio C=O:Li⁺=4:1 with varying concentration of montmorillonite (MMT) clay as nanofiller have been prepared by classical solution casting and high intensity ultrasonic assisted solution casting methods. The dielectric/electrical dispersion behaviour of these electrolytes was studied by dielectric relaxation spectroscopy at ambient temperature. The dielectric loss tangent and electric modulus spectra have been analyzed for relaxation processes corresponding to the side groups rotation and the segmental motion of PMMA chain, which confirm their fluctuating behaviour with the sample preparation methods and also with change of MMT concentration. The feasibility of these relaxation fluctuations has been explained using a transient complex structural model based on Lewis acid–base interactions. The low permittivity and moderate dc ionic conductivity at ambient temperature suggest the suitability of these electrolytes in fabrication of ion conducting electrochromic devices and lithium ion batteries. The amorphous behaviour and the exfoliated/intercalated MMT structures of these nanocomposite electrolytes were confirmed by X-ray diffraction measurements.     

Dielectric relaxation of CdSe nanoparticles

Nanoparticles of cadmium selenide (CdSe) have been synthesized by soft chemical route using mercaptoethanol as a capping agent. X-ray diffraction and transmission electron microscope measurements show that the prepared sample belongs to sphalerite structure with the average particle size of 25 nm. The band gap of the material is found to be 2.1 eV. The photoluminescence (PL) emission spectra of the sample are measured at various excitation wavelengths. The PL spectra appear in the visible region, and the emission feature depends on the wavelength of the excitation. Impedance spectroscopy is applied to investigate the dielectric relaxation of the sample in a temperature range from 323 to 473 K and in a frequency range from 42 Hz to 1.1 MHz. The complex impedance plane plot has been analyzed by an equivalent circuit consisting of two serially connected R-CPE units, each containing a resistance (R) and a constant phase element (CPE). The dielectric relaxation of the sample is investigated in the electric modulus formalism. The temperature dependent relaxation times obey the Arrhenius law. The Havriliak–Negami model is used to investigate the dielectric relaxation mechanism in the sample. The frequency dependent conductivity spectra are found to obey the power law.     

Dielectric relaxation and ac conductivity behavior of carboxyl functionalized multiwalled carbon nanotubes/poly (vinyl alcohol) composites

We study the dielectric relaxation and ac conductivity behavior of MWCNT-COOH/Polyvinyl alcohol nanocomposite films in the temperature (T) range 303–423 K and in the frequency (f) range 0.1 Hz–1 MHz. The dielectric constant increases with an increase in temperature and also with an increase in MWCNT-COOH loading into the polymer matrix, as a result of interfacial polarization. The permittivity data were found to fit well with the modified Cole-Cole equation. Temperature dependent values of the relaxation times, free charge carrier conductivity and space charge carrier conductivity were extracted from the equation. An observed increment in the ac conductivity for the nanocomposites was analysed by a Jonscher power law which suggests that the correlated barrier hopping is the dominant charge transport mechanism for the nanocomposite films. The electric modulus study revealed deviations from ideal Debye-type behavior which are explained by considering a generalized susceptibility function. XRD and DSC results show an increase in the degree of crystallinity.     

Dielectric relaxation and ac conduction in multiferroic TbMnO3 ceramics: Impedance spectroscopy analysis

Polycrystalline samples of Tb_1−xAl_xMnO₃ (x = 0, 0.1, 0.2) have been synthesized by means of standard high-temperature solid-state reaction technique. Detailed studies on the effect of compositional variation of aluminum (Al) on the electrical behavior (complex impedance Z*, complex modulus M*, and relaxation mechanisms) of the parent TbMnO₃ have been performed by using the nondestructive complex impedance spectroscopy technique at temperatures above room temperature. In the temperature range covered, the impedance plots signalize that the grains are the unique responsible for the conduction mechanism of the concerned material. The impedance spectra are well modeled in terms of electrical equivalent circuit with a grain resistance (R_g) and constant phase element impedance (Z_CPE). The conductivity data of the undoped and Al-doped samples are well fitted by the universal Jonscher's power law. The resulting fitting parameters indicate that for the studied samples, the hopping process occurs between neighboring sites. Activation energy values for dc conductivity are calculated for undoped and Al-doped samples and found to decrease when Al is incorporated. In turn, the emergence of single arc in the complex modulus spectrum for all the compositions of Al suggests that for the studied samples only one type of relaxation behavior is present at the selected temperatures. A non-Debye-type relaxation is clearly verified. The relaxation process in the present samples seems to be composition and temperature dependent, particularly at higher frequencies.     

Electrical conductivity and structural stability of SrCo1−xFexO3−δ

Perovskite compounds in the system of SrCo_1−xFe_xO_3−δ (x=0.2, 0.4 and 0.6) were synthesized by solid state reaction. SrCo_1−xFe_xO_3−δ shows the p-type small polaron conduction behavior. Electrical conductivity and oxygen vacancy content decrease with increase in Fe content. The incorporation of Fe increases the structural stability of SrCo_1−xFe_xO_3−δ at low temperatures, while decreasing the structural stability at high temperatures. Oxygen partial pressure has a strong influence on electrical conductivity. At low oxygen partial pressure, SrCo_0.8Fe_0.2O_3−δ will transform from cubic to orthorhombic structure. This structure can remain in 5%H₂/Ar only for a short time and then dissociates into Sr₃Fe₂O_6.64 and Co due to the reduction of B-site elements.     

Induction and control of dielectric relaxation properties in Fe-doped nonstoichiometric SrTiO3 ceramics

The dielectric properties of Fe-doped Ti-rich SrTiO₃ ceramics at both A and B sites were investigated. For A site doping, we found one structural phase transition associated with the substitution of smaller Fe ions, and two sets of dielectric relaxations ascribed to oxygen vacancies and hopping conduction between Fe²⁺ and Fe³⁺, respectively. Cole-Cole relation shows that both thermally activated dielectric relaxation behaviors mainly originate from the grain boundary. However, for B site doping, they are not observed in the measured temperature range since both the short-range diffusion of oxygen vacancies and electron conduction become the long-range migration, which indicates that the additional conductive channels are opened when Fe ion doping changes from A to B site. The results provide an experimental basis for adjusting dielectric properties in paraelectric materials.     

The effects of annealing on Au/pyronine-B/MD n-InP Schottky structure

Thin film of non-polymeric organic compound pyronine-B has been fabricated on moderately doped (MD) n-InP substrate as an interfacial layer using spin coating technique for the electronic modification of Au/MD n-InP Schottky contact. The electrical characteristics have been determined at room temperature. The barrier height and the ideality factor values for Au/pyronine-B/MD n-InP Schottky diode have been obtained from the forward bias I-V characteristics at room temperature as 0.60 eV and 1.041; 0.571 and 1.253 eV after annealing at 100 and 250 °C, respectively. An increase in annealing temperature at the Au/n-InP Schottky junction is shown to increase the reverse bias leakage current by about one order of magnitude and decrease the Schottky barrier height by 0.027 eV. Furthermore, the barrier height values for the Au/pyronine-B/MD n-InP Schottky diode have also been obtained from the C-V characteristics at room temperature as 1.001 and 0.709 eV after annealing at 100 and 250 °C, respectively. Finally, it was seen that the diode parameters changed with increase in the annealing temperature.     

Study of the structural, dielectric and magnetic properties of Bi2O3 and PbO addition on BiFeO3 ceramic matrix

In this paper we studied the effects of Bi₂O₃ and PbO addition on BiFeO₃ (BFO) ceramic matrix. The structural, dielectric and magnetic properties of fifteen BFO samples were discussed in view of possible applications in RF and microwave devices. The present work also reports the preparation of the samples. Polyvinyl alcohol (PVA) and tetraethyl orthosilicate (TEOS) were also added as a binder in the fabrication procedure. The samples have been studied by X-ray powder diffraction (XRD), scanning electron microscopy (SEM) and magnetic hysteresis measurements. Further, a study based on impedance spectroscopy also has been done. Dielectric permittivity (ε′) and dielectric loss (tan δ) were measured at room temperature in the frequency range 100 Hz-10 MHz, as well as a.c. conductivity. The -Im[Z(f)] versus Re[Z(f)] plot has been obtained. The samples were investigated in view of possible applications like miniaturized filters, diplexers and dielectric resonator antennas (DRA). In the RF and MW frequency region, the application of magneto-dielectric and multiferroic perovskite composite materials is desirable for the miniaturization of components.     

Effect of La substitution on conductivity and dielectric properties of Bi1−xLaxFeO3 ceramics: An impedance spectroscopy analysis

Bismuth ferrite (BFO) and La-substituted BFO with composition Bi_1−xLa_xFeO₃ (x=0.05, 0.1 and 0.15) (BLFO_x=0.05-0.15) ceramics were prepared using the solid state reaction route. A structural phase transition from rhombohedral phase to triclinic phase was observed for BLFO_x=0.05-0.15 ceramics. Modulus spectroscopy reveals the deviation of dielectric behavior from ideal Debye characteristics and the dependence of conductivity on ion hopping in BFO and BLFO_x=0.05-0.15 ceramics. The conductivity of the BFO ceramics decreases for La content of 5 mol%, followed by a subsequent increase with 10 and 15 mol% of lanthanum doping. The typical values of the activation energies at high temperature reveal the contribution of short range movement of doubly ionized oxygen vacancies to the conduction process in BFO and BLFO_x=0.05 ceramics. Both short range and long range motion of oxygen vacancies are responsible for large conductivity in BLFO_{x=0.1 and 0.15} ceramics.     

CIGS solar cell devices on steel substrates coated with Na containing AlPO4

Flexible copper indium gallium diselenide (CIGS)-based solar cells are developed on stainless steel (STS) substrates covered with an insulating layer. The Na containing AlPO₄ (“Na-AlPO₄”) material is processed using the slot-die coating method. The coated film is analyzed using various spectroscopic methods including scanning electron microscopy, energy dispersive X-ray spectrometry, transmission electron microscopy, secondary-ion mass spectrometry, X-ray diffraction, and 3D profiler. The characteristics of the solar cells fabricated on these insulating films are also evaluated. The application of the Na-AlPO₄ layer on the STS substrates is compared with the electrical performance of the CIGS solar cells fabricated on metal foil. Although the insertion of the insulating layer does not influence the formation of the CIGS film and solar cell performance, a better uniformity in the current–voltage curve is obtained.     

A new ternary carbide Dy2Mn2−xC5 (x=0.6): Preparation,crystal structure,and physical properties

The crystal structure, magnetic and electrical transport properties of the new ternary compound Dy₂Mn_2−xC₅ (x=0.6) have been investigated. According to X-ray powder diffraction the carbide crystallizes in its own structure type, space group I4/mmm, a=3.6421(2), c=15.7713(9) Å, R_B=0.062, R_p=0.134. The crystal structure contains isolated carbon atoms and C₂ dimers in square-bipyramidal holes and distorted bicapped square anti-prisms, respectively. Manganese atomic positions in the structure were found to be not fully occupied. Physical properties were studied in the temperature range down to 0.4 K. The electrical resistivity of Dy₂Mn_2−xC₅ (x=0.6) reveals its basically metallic nature with a positive temperature coefficient above about 30 K. A resistive anomaly at around 20 K indicates the appearance of an antiferromagnetic superzone boundary gap at low temperatures. A phase transition towards long range antiferromagnetic magnetic ordering below 19 K is further revealed by heat capacity and ac susceptibility data. Magnetization data refer to a non-trivial nature of the magnetic ground state which may be caused by the intrinsic structural disorder associated with random vacancies at the Mn site.     

The study of dielectric relaxation and glass forming tendency in Cd-Se-Te glassy system

The dielectric relaxation spectroscopes of Cd_xSe_70−xTe₃₀ (where x = 0, 5, 7, 10) alloy have been investigated in the temperature range 298-373 K and in the frequency range 100 Hz to 100 kHz near the percolation threshold. The frequency and temperature dependence on the dielectric constant showed a Debye dielectric relaxation process. Using Debye relation, the dielectric constant (?′), the most probable relaxation time (τ) and the barrier height (W) were estimated for binary ternary chalcogenide systems.In addition, the analysis of the results suggests that the effect of Cd content on electronic conduction of the system. The experimental results support to some extent the above criterion in the case of Cd-Se-Te ternary alloy.     

Dielectric and AC ionic conductivity investigations in K3H(SeO4)2 single crystal

Optical observation under the polarizing microscope and DSC measurements on K₃H(SeO₄)₂ single crystal have been carried out in the temperature range 25-200 °C. It reveals a high-temperature structural phase transition at around 110 °C. The crystal system transformed from monoclinic to trigonal. Electrical impedance measurements of K₃H(SeO₄)₂ were performed as a function of both temperature and frequency. The electrical conduction and dielectric relaxation have been studied. The temperature dependence of electrical conductivity indicates that the sample crystal became a fast ionic conductor in the high-temperature phase. The frequency dependence of conductivity follows the Jonscher's universal dynamic law with the relation σ(ω)=σ(0)+Aωⁿ, where ω is the frequency of the AC field, and n is the exponent. The obtained n values decrease from 1.2 to 0.1 from the room temperature phase to fast ionic phase. The high ionic conductivity in the high-temperature phase is explained by the dynamical disordering of protons between the neighboring SeO₄ groups, which provide more vacant sites in the crystal.