Faster 360° domain wall motion in nanostrip induced by spin-polarized current with out-of-plane magnetic field

By micromagnetic simulation, we show that faster propagation of 360° domain wall in magnetic nanostrips under spin-polarized currents in conjunction with out-of-plane magnetic fields can be obtained. Without magnetic field, the annihilation process of 360° domain wall is irreversible when spin-polarized current velocity above about 220 m/s. The annihilation of 360° domain wall can be suppressed by an out-of -plane magnetic field and domain wall speed can exceed 1500 m/s at large current density. This is different from the case exhibited in 180° domain wall. The underlying mechanism is investigated by changing the state of 360° domain wall and the direction of out-of-plane field.     

磁畴壁手性和磁斯格明子的拓扑性表征及其调控

磁性斯格明子由于拓扑的保护性,具有很高的稳定性和较小的临界驱动电流,有望应用于未来的赛道存储器件中.而在中心对称体系,由于偶极作用的各向同性,磁泡的拓扑性和螺旋度都呈现出多样性的特征.其中非平庸的磁泡即等同于磁性斯格明子.我们通过近期实验结果,结合微磁学模拟的方法,发现在中心对称体系中磁斯格明子的拓扑性会受到体系垂直各向异性的调控.另外在加磁场的演变过程中,会很大程度上依赖于基态畴的畴壁特性.磁场的倾斜或者一定的面内各向异性也会改变磁斯格明子的形态.通过对材料的基态磁结构及磁各向异性的调节,辅助以面内分量的控制,可以对基态磁畴、进而对磁斯格明子的拓扑性实现调控.这对磁斯格明子在电流驱动存储器件中的应用具有重要意义.     

Magnetic field dependence of the domain wall resistance in a quantum wire

For an ideal one-dimensional ferromagnetic wire with a magnetic domain wall (DW), contribution of the DW to the resistivity of the system has been investigated. We have studied the resistance due to the magnetic impurities in the domain wall which was suspended in a weak magnetic field for two types of chiralities. The analysis has been based on Boltzmann transport equation, within the relaxation time approximation. Through this formalism, both increasing and decreasing of the resistance due to the DW have been predicted in presence of Zeeman interaction as an extrinsic mechanism.     

消磁场对纳米铁磁线磁畴壁动力学行为的影响

为了实现基于磁畴壁运动的自旋电子学装置, 掌握磁畴壁动力学行为是重要争论之一.研究了在外磁场驱动下L-型纳米铁磁线磁畴壁的动力学行为. 通过微磁学模拟,在各种外磁场的驱动下考察了纳米铁磁线磁畴壁的动力学特性; 在较强外磁场的驱动下, 在不同厚度纳米线上考察了纳米线表面消磁场对磁畴壁动力学行为的影响. 为了进一步证实消磁场对磁畴壁动力学的影响, 在垂直于纳米线表面的外磁场辅助下分析了磁畴壁的动力学行为变化. 结果表明, 随着纳米线厚度和外驱动磁场强度的增加, 增强了纳米线表面的消磁场的形成, 使得磁畴壁内部自旋结构发生周期性变化, 导致磁畴壁在纳米线上传播时出现Walker崩溃现象. 在垂直于纳米线表面的外磁场辅助下, 发现辅助磁场可以调节消磁场的强度和方向. 这意味着利用辅助磁场可以有效地控制纳米铁磁线磁畴壁的动力学行为.     

Effect of a planar magnetic field on the domain wall dynamics in a double-layer uniaxial magnetic film

Motion of an isolated domain wall in a double-layer uniaxial magnetic film, where the film layers differ in characteristic length, saturation magnetization and damping parameter, is investigated by solving the Slonczewski equation. A planar magnetic field is applied normal to the domain-wall plane. The dependences of the threshold field and limiting velocity of disruption of the steady-state motion of the domain wall on the planar magnetic field value are obtained. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 60–63, December, 2008.     

磁性金属纳米结构的畴壁特性与磁逻辑电路构筑

自旋电子学由于其丰富的物理内涵和广泛的应用前景受到学术界和工业界的高度重视,成为近年来凝聚态物理和信息技术领域关注的焦点。本文介绍了利用磁性金属纳米结构实现作为自旋电子器件基础的自旋注入的方法,特别涉及利用铁磁金属纳米点接触结构钉扎磁畴的特点,研究自旋极化电流与磁畴壁的相互作用规律, 理解纳米结构中畴壁的动力学行为,并以此为基础构筑结构简单、性能优异的全金属磁逻辑电路,从而实现了由电信号驱动,通过电信号检测,并与CMOS技术兼容的目的。     

Particle‐in‐cell simulation of the effect of curved magnetic field on wall bombardment and erosion in a hall thruster

A curved, convex towards the channel bottom magnetic field is an important feature of an advanced Hall thruster that allows confining the plasma flow in the channel center, reducing the divergence angle of the ejected ion beam, and improving the discharge performance. In this article, the discharge behaviour of a Hall thruster in magnetic fields with different degrees of curvature is simulated with a particle‐in‐cell numerical method, and the effect of curved magnetic field on the ion bombardment and wall erosion and the associated mechanisms are studied and analysed. The results show that, as the curvature of the magnetic field increases, the propellant ionization becomes more confined at the channel center, the potential drop inside the channel decreases, and the acceleration region shifts outside the channel, which lead to the attenuation of the ion energy bombarding the wall and the deviation of the bombardment angle from the optimal sputtering angle. Conversely, the ion flux bombarding the wall near the channel exit increases. Nevertheless, the bombardment energy and angle are the dominant factors for the wall erosion, and the wall erosion rate clearly decreases with the increasing curvature of the magnetic field. These findings are closely related to the behaviour of electron conduction under a curved magnetic field; the relevant mechanisms are clarified in this article.     

The effect of an external magnetic field on the L subshell X-ray fluorescence cross sections and L subshell fluorescence yields in elements 73 ≤ Z ≤ 92 by 59.54 keV photons

L_i (i = 1, 2 and 3) X-ray fluorescence cross sections for Ta, W, Au, Hg, Tl, Pb, Bi, Th and U have been measured using the 59.54 keV incident photons energy in the external magnetic field of intensity +0.60 T. The values of L_i subshell fluorescence yields (w₁$w_1$, w₂$w_2$ and w₃$w_3$) have been measured for the same elements using the previously measured cross section values and the theoretical L_i subshell photoionisation cross sections, Coster–Kronig transition probabilities and emission rates. It is observed that the measured L_i subshell X-ray fluorescence cross section and L_i subshell fluorescence yield values for B = 0 are in good agreement with the theoretical ones evaluated using L_i subshell fluorescence yield and L_i subshell photoionization cross section. Furthermore, the results show that the atomic parameters such as spectral linewidth, radiation rates, photoionization cross section and fluorescence yield can change when the irradiation is conducted in a magnetic field.