L型石墨纳米结的热输运

利用非平衡格林函数方法研究了由半无限长扶手椅型和锯齿型边界石墨纳米带连接而成的L型石墨纳米结的热输运性质.结果表明,L型石墨纳米结的热导依赖于L型石墨纳米结的夹角和石墨纳米带的宽度.在L型石墨纳米结的夹角从30°增加到90°再增加到150°过程中,其热导显著增大.夹角为90°的L型石墨纳米结的热导随着扶手椅型纳米带宽度增加时,在低温区热导随着宽度的增大而降低,在高温区热导随宽度的增大而升高.对于夹角为150°的L型石墨纳米结,其热导无论是在低温区还是在高温区都随着锯齿型纳米带宽度的增加而降低.利用声子透射谱对这些热输运现象进行了合理的解释.研究结果阐明了不同L型石墨纳米结中的热输运机理,为设计基于石墨纳米结的热输运器件提供了重要的物理模型和理论依据. 关键词： 石墨纳米结 热输运 热导     

Thermal transport in S-shaped graphene nano-junctions

By using nonequilibrium Green's function method, we study the phonon transport properties in S-shaped graphene nano-junctions (GNJs). Interesting transmission phenomenon is found. The transmission spectrum of low frequency phonon shows forbidden frequency band, by changing the width W₂ of the S-shaped GNJs. These low frequency forbidden bands are sensitive to their periodic geometric shape of GNJs. These thermal transport phenomena can be explained by analyzing the phonon transmission coefficient. This paper illustrates the thermal transport mechanisms in the different S-shaped GNJs, and the results could provide significant physical models and theoretical validity in designing the thermal devices based on the GNJs.     

Spin transport in a Zigzag normal/ferromagnetic graphene junction

We study magnetic proximity effect induced low-energy spin transport in the normal/ferromagnetic junction of a semi-infinite zigzag graphene nanoribbon. Due to the absence of a spin flip in a single interface, the spin transfer in this model can be described by the "two-spin channel" model. We identify each spin channel as either a perfect conducting or a non-conducting channel. This feature leads to spin filter in symmetric zigzag graphene nanoribbon and spin precession in antisymmetric zigzag graphene nanoribbon, and helps to directly determine the exchange-splitting intensity directly, even without an external auxiliary bias.     

Electronic transport through zigzag/armchair graphene nanoribbon heterojunctions

The electronic transport properties of a graphene nanoribbon (GNR) are known to be sensitive to its width, edges and defects. We investigate the electronic transport properties of a graphene nanoribbon heterojunction constructed by fusing a zigzag and an armchair graphene nanoribbon (zGNR/aGNR) side by side. First principles results reveal that the heterojunction can be either metallic or semiconducting, depending on the width of the nanoribbons. Intrinsic rectification behaviors have been observed, which are largely sensitive to the connection length between the zGNR and aGNR. The microscopic origins of the rectification behavior have been revealed. We find that the carrier type can alter from electrons to holes with the bias voltage changing from negative to positive; the asymmetrical transmission spectra of electrons and holes induced by the interface defects directly results in the rectification behavior. The results suggest that any methods which can enhance the asymmetry of the transmission spectra between holes and electrons could be used to improve the rectification behavior in the zGNR/aGNR heterojunction. Our findings could be useful for designing graphene based electronic devices.     

Numerical study of localization length in disordered graphene nanoribbons

In this work, we study quantum transport properties of a defective graphene nanoribbon (DGNR) attached to two semi-infinite metallic armchair graphene nanoribbon (AGNR) leads. A line of defects is considered in the GNR device with different configurations, which affects on the energy spectrum of the system. The calculations are based on the tight-binding model and Green’s function method, in which localization length of the system is investigated, numerically. By controlling disorder concentration, the extended states can be separated from the localized states in the system. Our results may have important applications for building blocks in the nano-electronic devices based on GNRs.     

High thermoelectric performance of one graphene nanoribbon with line defects

We investigate the quantum transport through zigzag graphene nanoribbons with embedded “5-7-5”-edge line defects, by means of the non-equilibrium Green's function technique. It is found that when two semi-infinite line defects exist in the nanoribbon, notable Fano antiresonance takes place in the quantum transport process, which enables to drive the apparent thermoelectric effect. We propose this structure to be a promising candidate for improving the thermoelectric efficiency based on graphene nanoribbons.     

Electronic and transport properties of boron-doped graphene nanoribbons

We report a spin polarized density functional theory study of the electronic and transport properties of graphene nanoribbons doped with boron atoms. We considered hydrogen terminated graphene (nano)ribbons with width up to 3.2 nm. The substitutional boron atoms at the nanoribbon edges (sites of lower energy) suppress the metallic bands near the Fermi level, giving rise to a semiconducting system. These substitutional boron atoms act as scattering centers for the electronic transport along the nanoribbons. We find that the electronic scattering process is spin-anisotropic; namely, the spin-down (up) transmittance channels are weakly (strongly) reduced by the presence of boron atoms. Such anisotropic character can be controlled by the width of the nanoribbon; thus, the spin-up and spin-down transmittance can be tuned along the boron-doped nanoribbons.     

石墨烯纳米带电子结构的紧束缚法研究

在推导出的一般复式格子的π电子紧束缚能量色散关系的基础上,通过假定石墨烯纳米带的电子横向限制势为无穷大硬壁势,导出石墨烯纳米带的能量色散关系及石墨烯纳米带或为金属或为半导体的条件.结果表明：石墨烯纳米带的电子结构与其几何构型（对称性及宽度）密切相关,所以通过控制几何构型,可将其调制成金属或不同带隙的半导体.这意味着石墨烯纳米带对于发展新型纳米器件具有重要意义. 关键词： 石墨烯纳米带 复式格子 紧束缚模型 电子结构     

Quantum capacitance of the armchair-edge graphene nanoribbon

The quantum capacitance, an important parameter in the design of nanoscale devices, is derived for armchair-edge single-layer graphene nanoribbon with semiconducting property. The quantum capacitance oscillations are found and these capacitance oscillations originate from the lateral quantum confinement in graphene nanoribbon. Detailed studies of the capacitance oscillations demonstrate that the local channel electrostatic potential at the capacitance peak, the height and the number of the capacitance peak strongly depend on the width, especially a few nanometres, of the armchair-edge graphene nanoribbon. It implies that the capacitance oscillations observed in the experiments can be utilized to measure the width of graphene nanoribbon. The results also show that the capacitance oscillations are not seen when the width is larger than 30 nm.     

Andreev reflection in a patterned graphene nanoribbon superconducting heterojunction

In the study, an improved superconducting heterojunction is made up of a zigzag graphene nanoribbon, which is patterned by a triangle and supports localized edge mode. Since all the localized edge modes stem from a pattern operation, the structure features of the pattern exert an enormous function on the coherent quantum transport. Especially, the patterned modes can enhance the Andreev reflection largely both in the ferromagnetic nanoribbon edge and the antiferromagnetic nanoribbon edge. The spin resolved zero bias conductances, in sharp contrast to its counterpart in the infinite width superconducting heterojunction, exhibit the different dependence on the patterned ferromagnetic interaction.     

Molecular Dynamics Studies on Ballistic Thermal Resistance of Graphene Nano-Junctions

Ballistic thermal resistance of graphene nano-junctions is investigated using non-equilibrium molecular dynamics simulation. The simulation system is consisted of two symmetrical trapezoidal or rectangular graphene nanoribbons(GNRs) and a connecting nanoscale constriction in between. From the simulated temperature profile, a big temperature jump resulted from the constriction is found, which is proportional to the heat current and corresponds to a local ballistic thermal resistance. Fixing the constriction width and the length of GNRs, this ballistic thermal resistance is independent of the width of the GNRs bottom layer, i.e., the convex angle. But interestingly, this thermal resistance has obvious size effect. It is inversely proportional to the constriction width and will disappear with the constriction being wider. Moreover, based on the phonon dynamics theory, a theoretical model of the ballistic thermal resistance in two-dimensional nano-systems is developed, which gives a good explanation on microcosmic level and agrees well with the simulation result quantitatively and qualitatively.     

基于石墨烯纳米带的齿形表面等离激元滤波器的研究

提出了一种基于石墨烯纳米带的齿形表面等离激元波导滤波器, 并且用时域有限差分法研究了这种结构. 单个齿形的滤波器可以实现带阻滤波, 其滤波特性可以用基于散射矩阵的解析模型解释. 滤波器的透射谱特性可以通过调节齿的长度、宽度以及石墨烯的化学势来改变. 由于石墨烯的化学势可以用门电路来调节, 这种结构的滤波器可以在器件加工完成后灵活地调节其工作波长. 同时研究了多齿滤波器, 这种结构可以实现宽带滤波, 文中对具有不同齿数、周期的滤波器的透射谱进行了细致的研究. 研究结果对实现基于石墨烯的大规模集成光电子器件提供了重要的理论参考.     

Spin-dependent transport properties of an armchair boron-phosphide nanoribbon embedded between two graphene nanoribbon electrodes

Using non-equilibrium Green׳s function and ab initio calculations we investigate structural, electronic, and transport properties of a junction consisting of armchair hexagonal boron phosphide nanoribbon (ABPNR) contacted by two semi-infinite electrodes composed of armchair graphene nanoribbons (AGNRs). We consider three different configurations including the pristine AGNR–BP–GNR and substitutions for Iron atoms, namely on phosphorus and boron atoms at one edge of the BP nanoribbon. The spin current polarization in all these cases is extracted for each structure and bias. Such hybrid system is found to exhibit not only significant spin-filter efficiency (SFE) but also tunable negative differential resistance (NDR).     

基于量子修正的石墨烯纳米带热导率分子动力学表征方法

本文提出了基于量子修正的非平衡态分子动力学模型,可用于石墨烯纳米带热导率的表征.利用该模型对不同温度下,不同手性及宽度的石墨烯纳米带热导率进行了研究,结果发现:相较于经典分子动力学模型给出的热导率随温度升高而单调下降的结论,在低于Debye温度的情况下,量子修正模型的计算结果出现了反常现象.本文研究还发现,石墨烯纳米带的热导率呈现出明显的边缘效应及尺度效应:锯齿型石墨烯纳米带的热导率明显高于扶手椅型石墨烯纳米带;全温段的热导率及热导率在低温段随温度变化的斜率均随宽度的增加而增大.最后,文章用Boltzmann声子散射理论对低温段的温度效应及尺度效应进行了阐释,其理论分析结果说明文章所建模型适合在全温段范围内对不同宽度和不同手性的热导率进行精确计算,可为石墨烯纳米带在传热散热领域的应用提供理论计算和分析依据.     

Effects of Stone-Wales Defect Symmetry on the Electronic Structure and Transport Properties of Narrow Armchair Graphene Nanoribbon

We report a first principles calculation to investigate the electron transport properties of defected armchair graphene nanoribbon (AGNR) influenced by Stone-Wales (SW) defect. The SW defect is found to be able to effectively influence the electronic structure of the defected AGNRs, and their electron transport behaviors can exhibit prominent differences depending on the symmetry of the nanostructured morphology. Moreover, our simulations have revealed that the introducing of the SW defect could be favorable for the electron transport of the defective AGNR. Our investigation has confirmed the possibility of tuning the electron transport of graphene nanoribbon by introducing a topological defect, which could be helpful to extending the field of applications for graphene nanoribbon-based nanodevices.     

Electronic transport through superlattice-graphene nanoribbons

In this work, we study quantum transport properties of superlattice-graphene nanoribbons (SGNRs) attached to two semi-infinite metallic armchair graphene nanoribbon (AGNR) leads. The calculations are based on the tight-binding model and Green’s function method, in which localization length, density of states (DOS) and conductance of the system are calculated, numerically. By controlling the layered boron concentration, this kind of system can separate the extended states from the localized states. Our results may have important applications for building blocks in the nano-electronic devices based on GNRs.     

Fano Resonance Effect in CO-Adsorbed Zigzag Graphene Nanoribbons

Quantum interference plays an important role in tuning the transport property of nano-devices. Using the non-equilibrium Green's Function method in combination with density functional theory, we investigate the influence to the transport property of a CO molecule adsorbed on one edge of a zigzag graphene nanoribbon device. Our results show that the CO molecule-adsorbed zigzag graphene nanoribbon devices can exhibit the Fano resonance phenomenon. Moreover, the distance between CO molecules and zigzag graphene nanoribbons is closely related to the energy sites of the Fano resonance. Our theoretical analyses indicate that the Fano resonance would be attributed to the interaction between CO molecules and the edge of the zigzag graphene nanoribbon device, which results in the localization of electrons and significantly changes the transmission spectrum.     

Electron transport of step-shaped graphene nanoribbon

In this work, we report a theoretical study of the electronic transport through a step-shaped graphene nanoribbon by the tight-binding method. We found that the conductance suppression near the Dirac point is pervasive, and the top boundary configuration is irrelevant; this arises from the antiresonance effect associated with an edge state localized at the transition edge of the top layer of graphene nanoribbon. In addition, the conductance can be easily tuned from zero to unity by a gate bias in the bilayer graphene nanoribbon, this feature will help us to realize the electric nanoswitch.     

周期性纳米洞内边缘氧饱和石墨烯纳米带的电子特性

利用基于密度泛函理论的第一性原理方法,研究了内边缘氧饱和的周期性凿洞石墨烯纳米带（G NR）的电子特性. 研究结果表明：对于凿洞锯齿形石墨烯纳米带（ZGNRs）,在非磁性态时不仅始终为金属,且金属性明显增强;反铁磁态（AFM）时为半导体的ZGNR,凿洞后可能成为金属;但铁磁态（FM）为金属的ZGNR,凿洞后一般变为半导体或半金属. 而对于凿洞的扶手椅形石墨烯（AGNRs）,其带隙会明显增加. 深入分析发现：这是由于氧原子对石墨烯纳米带边的电子特性有重要的影响,以及颈次级纳米带（NSNR）及边缘次级纳米带（ESNR）的不同宽度及边缘形状（锯齿或扶手椅形）能呈现出不同的量子限域效应. 这些研究对于发展纳米电子器件有重要的意义. 关键词： 石墨烯纳米带 纳米洞 内边缘氧饱和 电子特性     

氢化与非氢化石墨烯纳米条带的密度泛函研究

基于密度泛函理论的第一性原理计算方法,研究了宽度N=8的边缘氢化和非氢化条带的结构和电子性质. 研究表明,扶手形无氢化石墨纳米条带的边缘碳原子是以三重键相互结合,它在边缘的成键强度比氢化时要高,具有更强的化学活性,可作为纳米化学传感器的基础材料. 能带结构计算表明,无论是扶手形条带还是锯齿形条带,它们都是具有带隙的半导体,且无氢化条带的带隙要比氢化的条带带隙宽度大,氢化对于条带的电子性质具有显著修饰作用. 通过锯齿形石墨纳米条带顺磁性、铁磁性和反铁磁性的计算,发现反铁磁的状态最稳定,并且边缘磁性最强,这有利于条带在自旋电子器件中的应用. 关键词： 石墨纳米条带 成键机理 电子结构 自旋分布