Eu^3＋：Sm^3＋：Cr^3＋：YAG红色单晶荧光体

报道外延生长的多激活中心掺杂的红色单晶荧光体Ｅｕ＾３＋：Ｓｍ＾３＋：Ｃｒ＾３＋：ＹＡＧ,其直径达到５４ｍｍ,荧光色坐标为ｘ＝０．６１３７,ｙ＝０．３７３８,相当于波长λ＝５９９ｍｍ的红色荧光,具有较高的色饱和度。这种单晶材料具有委好的抗电子束灼伤能力,在入射能量达到１０＾５Ｗ／ｍ＾２时无发光猝灭现象,是一种较理想的红色单晶荧光材料。     

Eu3+∶Sm3+∶Cr3+∶YAG红色单晶荧光体

报道外延生长的多激活中心掺杂的红色单晶荧光体Eu3 ∶Sm3 ∶Cr3 ∶YAG ,其直径达到54mm ,荧光色坐标为x=0 .6 137,y =0 .3738,相当于波长λ=599nm的红色荧光 ,具有较高的色饱和度。这种单晶材料具有很好的抗电子束灼伤能力 ,在入射能量达到 10 5W/m2 时无发光猝灭现象 ,是一种较理想的红色单晶荧光材料。     

固态照明/显示用荧光陶瓷研究进展

固态照明作为第四代照明光源因其高效、环保的优势在近30年来得到了飞速发展,广泛应用于各种场景(例如汽车大灯、投影显示、工业生产和远距离照明).而大功率、高亮度的白色发光二极管(W-LED)及激光照明技术对颜色转换材料的服役稳定性提出了新的要求,荧光陶瓷以其能承受高功率激发密度的独特优势应运而生.本文综合评述了固态照明/...     

1keV以下的电子荧光及四极彩色荧光显示器结构探讨

本文分析了开发彩色荧光显示器(VFD)所存在的问题;论述了带螺旋端点阴极、前发光型四极平板VFD的结构;探讨了在新型VFD中使用Y2O2S:Eu、ZnS:Cu,Al和ZnS:Ag为三基色发光材料、在阳极电庄≤1keV时实现彩色显示的原理,并给出了一个有十二种发光颜色的频谱显示器件的实例.     

白光LED用新型Ce,Pr掺杂的YAG单晶荧光材料的光谱性能研究

为了改善白光LED用荧光材料效率低、均匀性差、光衰大、寿命短及物化性能差等不足,本文采用单晶荧光材料取代荧光粉来制备白光LED,并对白光LED用新型YAG单晶荧光材料的制备和光谱性能进行了研究.采用提拉法生长了白光LED用Ce:YAG及Pr,Ce:YAG晶体,并通过吸收光谱,激发、发射光谱对晶体材料的光谱特性进行表征....     

白光LED用新型Ce,Pr掺杂的YAG单晶荧光材料的光谱性能研究

为了改善白光LED用荧光材料效率低、均匀性差、光衰大、寿命短及物化性能差等不足,本文采用单晶荧光材料取代荧光粉来制备白光LED,并对白光LED用新型YAG单晶荧光材料的制备和光谱性能进行了研究.采用提拉法生长了白光LED用Ce∶YAG及Pr,Ce∶YAG晶体,并通过吸收光谱,激发、发射光谱对晶体材料的光谱特性进行表征.研究表明,Ce∶YAG单晶荧光材料可以被发射波长460 nm左右的蓝光芯片有效激发,产生一个范围为480~650 nm宽峰发射.通过Pr3+,Ce3+离子共掺杂可以有效补偿Ce3+离子单掺杂YAG荧光材料发光中的红色发光成分.     

固态照明/显示用荧光陶瓷研究进展EI北大核心CSCD

固态照明作为第四代照明光源因其高效、环保的优势在近30年来得到了飞速发展,广泛应用于各种场景(例如汽车大灯、投影显示、工业生产和远距离照明)。而大功率、高亮度的白色发光二极管(W-LED)及激光照明技术对颜色转换材料的服役稳定性提出了新的要求,荧光陶瓷以其能承受高功率激发密度的独特优势应运而生。本文综合评述了固态照明/显示用荧光陶瓷的最新研究进展,阐明了光源的评估标准,总结了白光及几种单色发光荧光陶瓷在大功率照明和投影显示领域的发展和应用。并阐述了荧光陶瓷中光提取效率、显色指数(CRI)和相关色温(CCT)的提升策略,讨论了激光照明中的发光饱和与发光均匀性问题。最后对荧光陶瓷在固态照明/显示应用中的前景和挑战进行了展望。     

新型红色荧光粉NaLa_(0.7)(MoO_4)_(2-x)(WO_4)_x∶0.3Eu~(3+)的制备及发光性质研究

采用高温固相法合成具有余辉性能的发光材料NaLa_(0.7)(MoO_4)_(2-x)(WO_4)_x∶0.3Eu~(3+)(x=0,0.5,1,1.5,2)。用X射线衍射(XRD)和荧光光谱对样品的晶体结构和发光特性进行表征。测试结果表明,在900℃下烧结8 h所合成的NaLa_(0.7)(MoO_4)_(2-x)(WO_4)_x∶0.3Eu~(3+)样品为纯相Na La(Mo O_4)_2,样品可被近紫外光393nm和蓝光462 nm有效激发,其发射主峰位于615 nm处,属于Eu3+的5D0-7F2跃迁。Na La_(0.7)(Mo O_4)_(2-x)-(WO_4)_x∶0.3Eu~(3+)的发光强度随着W6+浓度的增加而增大,当W6+掺杂量x=1时发光最强,而后随W6+掺杂浓度的增加出现浓度猝灭现象。通过计算得到样品在393 nm和462 nm激发下的色坐标,当W6+的掺杂量x=1时,样品的红光色纯度最好。     

非旋转对称像差下不同离焦电子显微像的叠加改善传递函数

本文提出用不同离焦的高分辨电子显微像光学方法叠加,改善带有非旋转对称像差的电子显微像相位衬度传递的数.使叠加后传递函数在全场区域同相位,并使传递函数的零值由另一传递函数的峰值填补,改善了电子显微像的像质.     

Matching of light fluxes in the analysis of measurement data with different space resolutions

We investigate the effect of the dimensions of instantaneous visual fields and the time of accumulation of a signal on the magnitude of light fluxes, recorded by means of charge-coupled device (CCD)-receivers, in scanning different kinds of surfaces. We show that, to compare light fluxes, it is necessary to introduce weight coefficients that take into account the time during which an area measured with a high space resolution is in the visual field of instrumentation with a low space resolution. Errors in the determination of light fluxes, when data obtained with a high space resolution are summed up with equal weight coefficients, have been evaluated. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 67, No. 1, pp. 123–126, January–February, 2000.     

机敏材料中竹节型光纤传感阵列及其信号处理

提出了一种新颖的，采用刻纹多模光纤组成的可用于机敏材料与结构的竹节形光纤传感阵列，并探索采用人工神经网络来处理其输出的并行分布式传感信号，由此和到材料的内应变，应力及损伤的大小及其位置等信息。     

A quantitative study of diffracted X-ray intensities from type I natural diamond crystals by high resolution X-ray diffractometry and comparison with nearly perfect silicon single crystals

Results of accurate measurements of peak and integrated intensities of , 111 and 333 reflections of natural diamonds of type I and nearly perfect silicon single crystals are reported. Highly monochromated and collimated MoK _{α 1} exploring beam was used. A quadrupole crystal X-ray diffractometer was employed in (+, −, +) and (+, −, +, −) settings. (111) platelets of diamond and silicon crystals with thicknesses of about 1 mm were selected. High resolution diffraction curves, stationary and traverse topographs were recorded. Diffraction curve half widths of diamond and silicon crystals were in the range: 45–200 arc sec and a few arc sec respectively. The experimental values of integrated intensitiesρ for diamond crystals were found to lie between the theoretical values for ideally perfect and ideally imperfect crystals. Experimental values ofρ for silicon were closer to the “perfect crystal” values. This is consistent with the results of diffractometric and topographic evaluation. The peak intensities of all reflections were higher for diamond crystals in comparison to the silicon crystals. The ratioI _C/I _Si lies in the range 1.3 (111 reflection) to 10.5 and (333) reflections. This is anomalous and cannot be accounted for by considering the degree of perfection, structure factor and difference in absorption coefficient.