Highly efficient blue organic light-emitting diodes using various hole and electron confinement layers

In this Letter, blue phosphorescence organic light-emitting diodes(PHOLEDs) employ structures for electron and/or hole confinement; 1,3,5-tris(N-phenylbenzimiazole-2-yl)benzene is used as a hole confinement layer and tris-(phenylpyrazole)iridium [IreppzT3] is utilized for an electron confinement layer(ECL). The electrical and optical properties of the fabricated blue PHOLEDs with various carrier-confinement structures are analyzed.Structures with a large energy offset between the carrier confinement and emitting layers enhance the charge-carrier balance in the emitting region, resulting from the effective carrier confinement. The maximum external quantum efficiency of the blue PHOLEDs with the double-ECLs is 24.02% at 1500 cd∕m2and its luminous efficiency is 43.76 cd∕A, which is 70.47% improved compared to the device without a carrier-confinement layer.     

Realization of high-performance blue organic light-emitting diodes using multi-emissive layers

High-performance blue organic light-emitting diodes （OLEDs） are developed. A concept of using multiple-emissive layer （EML） configuration is adopted. In this letter, bis（2-methyl-8-quinolinolate）-4- （phenylphenolato）A1 （BAlq） and 9,10-di（naphtha-2-yl）anthracene （ADN）, which serve n- and p-type EMLs, respectively, are used to evaluate and demonstrate the multi-EML concept for blue OLEDs. The thickness effect of individual EMLs and the number of EMLs, e.g., triple and quadruple EML components, on the power efficiency of blue OLEDs are systematically investigated. To illustrate the point, the total thickness of the emissive region in different blue OLEDs are kept contact at 30 nm for comparison. The power efficiency of blue OLEDs with a quadruple EML structure of BAlq/ADN/BAlq/ADN is about 40% higher than that of blue OLEDs having a single EML unit. The Commission Internationale deL＇eclairage color coordinates of multi-EML OLEDs have values that represent the average of blue emissions from individual EMLs of BAlq and ADN.     

基于空穴注入层摩擦定向的偏振蓝光聚合物电致发光器件

研究了利用摩擦空穴注入层3,4-乙撑二氧噻吩:聚苯乙烯磺酸(PEDOT:PSS)作为定向层实现聚芴(PFO)薄膜的偏振电致发光,蓝光的色坐标为(0.20,0.21).从聚合物薄膜的紫外可见吸收和光致发光偏振特性,研究了不同定向层摩擦强度、退火温度以及退火时间下PFO薄膜的二向色性,并证明退火温度是决定器件偏振性能的关键因素.当摩擦强度为25 mm退火温度和时间分别为200℃和30 min时,得到较好的偏振性能,器件的电致发光偏振率约为3. 关键词： 偏振发光 摩擦定向 聚合物电致发光 空穴注入层     

White organic light-emitting device with\ both phosphorescent and fluorescent emissive layers

This paper reports the fabrication of novel white organic light-emitting device（WOLED） by using a high efficiency blue fluorescent dye N-（4-（（E）-2-（6-（（E）-4-（diphenylamino）styryl）naphthalen-2-yl）vinyl）phenyl）oN- phenylbenzenamine （N-BDAVBi） and a red phosphoresecent dye bis （1-（phenyl） isoquinoline） iridium （III） acetylanetonate （Ir（piq）2（acac））. The configuration of the device was ITO/PVK：TPD/CBP： N-BDAVBi /CBP/ BALq： Ir（piq）2（acac）/BCP/Alq3/LiF：AL. By adjusting the proportion of the dopants （N-BDAVBi, Ir（piq）2（acac）） in the light-emitting layer, white light with Commission Internationale de l＇Eclairage （CIE） coordinates of （0.35, 0.35） and a maximum luminance of 25350cd/m2 were obtained external quantum and current efficiency of 6.78% and between the two light-emitting layers and using BCP at an applied voltage of 22V. The WOLED exhibits maximum 12cd/A respectively. By placing an undoped spacer CBP layer as hole blocking layer, the colour stabilization slightly changed when the driving voltage increased from 6 to 22 V.     

Efficiency improvement of red organic light-emitting diodes using a blue phosphorescent exciton blocking layer

Quantum efficiency of red organic light-emitting diodes was improved using a blue phosphorescent emitting layer as an exciton blocking layer. Compared with 8.1% quantum efficiency of standard devices without an exciton blocking layer, high quantum efficiency of 14.1% was obtained using a blue phosphorescent emitting layer between the hole transport layer and the red emitting layer.     

空穴注入层对蓝色有机电致发光器件性能的影响

以DPVBi为发光层,NPB为空穴传输层,在阳极ITO和NPB之间分别插入不同的空穴注入层CuPc和PEDOT:PSS,制备了两种结构的蓝色有机电致发光器件(OLEDs):ITO/CuPc/NPB/DPVBi/BCP/Alq3/Al和ITO/PEDOT:PSS/NPB/DPVBi/BCP/Alq3/Al,研究了不同空穴注入材料对蓝色OLEDs发光性能的影响,并与没有空穴注入层的器件进行了比较.其中CuPc分别采用旋涂和真空蒸镀两种丁艺,比较了不同成膜工艺对器件发光特性的影响.结果表明:加入空穴注入层的器件比没有空穴注入层器件性能要好,其中插入水溶性CuPc的器件,其发光亮度和效率虽然比蒸镀CuPc器件要低,但比插入PEDOT:PSS 器件发光性能要好.又由于水溶性CuPc采用旋涂工艺成膜,与传统CuPc相比,制备工艺简单,所以为一种不错的空穴注入材料.     

Performance enhancement of blue light-emitting diodes by adjusting the p-type doped last barrier

Blue light-emitting diodes (LEDs) with different p-doping concentrations in the last barrier have been studied numerically. The energy band diagrams, carrier concentrations, internal quantum efficiency and light output power are investigated using APSYS software. The simulation results show that the LED structure with p-doping in the last barrier has a better hole-injection efficiency and confinement of electron leakage over the structure with the last undoped GaN barrier due to enhancement of the holes’ injection and the electrons’ confinement. As a result, the efficiency droop is markedly improved, and the light output power is greatly enhanced when a larger p-doping amount is centralised in the last barrier.     

Fine-tuning the thicknesses of organic layers to realize high-efficiency and long-lifetime blue organic light-emitting diodes

By using p-bis(p-N,N-diphenyl-aminostyryl)benzene doped 2-tert-butyl-9,10-bis-β-naphthyl)-anthracene as an emitting layer,we fabricate a high-efficiency and long-lifetime blue organic light emitting diode with a maximum external quantum efficiency of 6.19% and a stable lifetime at a high initial current density of 0.0375 A/cm2.We demonstrate that the change in the thicknesses of organic layers affects the operating voltage and luminous efficiency greater than the lifetime.The lifetime being independent of thickness is beneficial in achieving high-quality full-colour display devices and white lighting sources with multi-emitters.     

High efficiency blue phosphorescent organic light-emitting diodes without electron transport layer

High efficiency blue phosphorescent organic light-emitting diodes were fabricated without an electron transport layer using a spirobifluorene based blue triplet host material. The simple blue PHOLEDs without the electron transport layer showed a high external quantum efficiency and current efficiency of 16.1% and 30.2 cd/A, respectively. The high device performances of the electron transport layer free blue PHOLEDs were comparable to those of blue PHOLEDs with the electron transport layer.     

Solution-processed WOx hole injection layer for efficient fluorescent blue organic light-emitting diode

Solution-processed tungsten oxide (s-WO_x) interfacial layer for efficient hole injection in fluorescent blue organic light-emitting diode (OLED) is demonstrated. The OLED using 2-methyl-9,10-bis(naphthalen-2-yl)anthracene (MADN) as emitter shows luminous efficiency of 3.3 cd/A, power efficiency of 2.5 lm/W and external quantum efficiency of 4.6% with Commission Internationale d'Eclairage (CIE) color coordinates of (0.154, 0.102). Using MADN doped 1-4-di-[4-(N,N-diphenyl)amino]styryl-benzene as emitter, luminous efficiency of 10.8 cd/A, power efficiency of 6.4 lm/W and external quantum efficiency of 7.2% with CIE color coordinates of (0.167, 0.283) are achieved. Atomic force microscopy and X-ray photoelectron spectroscopy show that s-WO_x features superior film morphology and non-stoichiometry with slight oxygen deficiency. Current-voltage characteristics and impedance spectroscopy analysis indicate that s-WO_x behaves slightly enhanced hole injection and accordingly contributes to improved device performance in comparison with conventional vacuum thermal evaporation WO_x. Our results pave an alternative way for broadening WO_x application with solution process and advancing fluorescent blue OLEDs.     

Multi-stacked organic light-emitting diodes using zinc oxide nanoparticle interfacial layers

Stacked organic light-emitting diodes (SOLEDs) with 30-nm nanoparticle (NP) interfacial layers were investigated. Zinc oxide (ZnO) was used as an interfacial layer between two green polymer (GP) layers. SOLEDs with NP interfacial layers had higher device efficiency than did a single-unit device due to the high probability of exciton recombination that originated from the Auger electron-assisted energy up-conversion process. Although the current density and luminance of SOLEDs with ZnO NP interfacial layers were smaller than those of the reference device, the efficiency was doubled because of the big band alignment difference and the large band gap between GP and ZnO NP interfacial layers, which induced more radiative-exciton recombination.     

Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers

InGaN-based light-emitting diodes with p-GaN and p-AlGaN hole injection layers are numerically studied using the APSYS simulation software.The simulation results indicate that light-emitting diodes with p-AlGaN hole injection layers show superior optical and electrical performance,such as an increase in light output power,a reduction in current leakage and alleviation of efficiency droop.These improvements can be attributed to the p-AlGaN serving as hole injection layers,which can alleviate the band bending induced by the polarization field,thereby improving both the hole injection efficiency and the electron blocking efficiency.     

Enhancement of the efficiency and the color stabilization of organic light-emitting devices fabricated utilizing stepwise doped hole transport layers

The electrical and the optical properties of organic light-emitting devices (OLEDs) consisting of aluminum (Al)/lithium quinolate/tris (8-hydroxyquimoline) Al/5,6,11,12-tetraphenylnaphthacene (rubrene)-doped N,N′-bis-(1-naphthyl)-N,N′-diphenyl-1,1-biphenyl-4,4′-diamine (NPB)/indium-tin-oxide/glass structures fabricated with uniformly doped and stepwise-doped hole transport layers (HTLs) were investigated. The turn-on voltage of the OLEDs fabricated utilizing a stepwise-doped HTL was smaller than that of the OLEDs fabricated with a uniformly doped HTL, and the corresponding luminance at the same voltage was higher. The Commission Internationale de l'Eclairage (CIE) chromaticity coordinates of the OLEDs fabricated utilizing a stepwise-doped HTL became stabilized, and the CIE chromaticity coordinates of the OLEDs at 12 V was (0.43, 0.53), indicative of a yellow emission corresponding to the rubrene layer. The luminescence mechanisms of the OLEDs fabricated utilizing a stepwise-doped HTL are described on the basis of the experimental results.     

Enhancing properties of organic light-emitting diodes with LiF inside the hole transport layer

A new device has been made by inserting thin LiF layer in N,N′-diphenyl-N,N′-bis(1-napthyl–phenyl)-1, 1′-biphenyl-4,4′-diamine (NPB), which has a configuration of ITO/NPB(20 nm)/LiF(0.5 nm)/NPB(20 nm)/Alq₃(60 nm)/LiF(0.5 nm)/Al. Compared with normal device, the device inserted LiF layer inside NPB (HTL) can improve its performance. The luminance and efficiency is about 1.4 and 1.3 folds high of the conventional structure, respectively. The suggestion mechanism is that the LiF in the NPB layer can block holes of NPB, and balance the holes and electrons. Consequently, there are more excitons formed to boost the diode’s luminance and efficiency. And it may offer some valuable references for OLED’s structure.     

Efficient hole injection in organic light-emitting diodes using polyvinylidenefluoride as an interlayer

The effect of the polyvinylidenefluoride (PVDF) interlayer on the hole injection and the device performances of the green phosphorescent organic light-emitting diodes (PHOLEDs) was investigated. The hole current density of the hole only device was improved and the power efficiency of the green PHOLEDs was enhanced from 10.5 to 12.5 lm/W by the PVDF interlayer. The reduction of the interfacial energy barrier was responsible for the high hole current density in the PVDF interlayer based green PHOLEDs.     

White phosphorescent organic light-emitting diodes using double emissive layer with three dopants for color stability

We fabricate white phosphorescent organic light-emitting diodes （PHOLEDs） with three dopants and double emissive layer （EML） to achieve color stability. The white PHOLEDs use FIrpic dopant for blue EML （B- EML）, and Ir（ppy）3：Ir（piq）3 dopants for green：red EML （GR-EML） with N,N＇-dicarbazolyl-3, 5-benzene （mCP） as host material. Thicknesses of B-EML and GR-EML are adjusted to form a narrow recombination zone at two EML＇s interface and charge trapping happens in EML according to wide highest occupied molecular orbital and/or lowest unoccupied molecular orbital energy band gap of mCP and smaller energy band gap of dopants. The total thickness of both EMLs is fixed at 30 nm in the device structure of ITO （150 nm）/MoO3 （2 nm）/N,N＇-diphenyl-N,N＇-bis（1-naphthyl-phenyl）-（1,1″-biphenyl）-4, 4＇-diamine （70 nm）/ meP：Firpic-8.0% （12 nm）/mCP：Ir（ppy）3-3.0%：Ir（piq）3-1.5% （18 nm）/2″,2＇,2＂＇-（1,3,5-benzinetriyl）-tris（1- phenyl-l-H-benzimidazole） （30 nm）/8-hydroxyquinolinolato-lithium （2 nm）/A1 （120 nm）. White PHOLED shows 18.25 cd/A of luminous efficiency and white color coordinates of （0.358 and 0.378） at 5000 cd/m2 and color stability with slight CIExy change of （0.028 and 0.002） as increasing luminance from 1000 to 5000 cd/m^2.     

White light-emitting diodes using blue and yellow-orange-emitting phosphors

A blue-emitting phosphor, BaMgAl₁₀O₁₇:Eu²⁺ (BAM) and a yellow-orange phosphor, Ba²⁺-codoped Sr₃SiO₅:Eu²⁺ were prepared by the solid-state reaction. Excitation and emission spectra results showed that BAM and Ba²⁺-codoped Sr₃SiO₅:Eu²⁺ can be efficiently excited by near-ultraviolet (n-UV)-visible light from 250 to 440 nm. The effects of the doped-Eu²⁺ concentration in BAM and Ba²⁺-codoped Sr₃SiO₅:Eu²⁺ on the photoluminescence were investigated in detail. White light-emitting diodes (LED) was obtained by combining n-UV LED chip (GaN-based 380 nm emitting) with BaMgAl₁₀O₁₇:0.09Eu²⁺ and 0.1Ba²⁺-codoped Sr₃SiO₅: 0.2Eu²⁺ phosphors with the characteristic of color-rendering index of 86, CIE chromaticity coordinates (x,y) of (0.3216,0.3096), and color temperature T_c of 5700 K. As the current increases, the relative intensity simultaneously increases. The CIE chromaticity coordinates (x,y) of the white LED tends to decrease. The correlated color temperature T_c increases from 4100 to 7500 K and the color-rendering index R_a increases from 82 to 87 simultaneously.     

白光有机电致发光器件的载流子传输与复合特性

基于一种将具有电荷传输性的双极性主体材料与蓝、黄光客体材料共蒸的单层结构的同质结结构,制备了色温可调的白光有机电致发光器件(OLED)。由于不存在激子阻挡层,单层结构容易发生漏电流现象,致使OLED器件具有较高的工作电压和较低的电流/功率效率。在空穴/电子传输层进行p/n型掺杂的同质结结构则大大改善了器件性能。研究表明: 该种器件结构获得了相对较低的起压5.6 V,较高的电流效率2.64 cd/A和低效率滚降,其色坐标则随着亮度的增加沿着普朗克轨迹变化,产生类似于太阳光的发光特性。另外,对主体材料和共蒸层的电荷载流子的传输特性和复合机制也进行了一系列分析研究。     

白光有机电致发光器件的载流子传输与复合特性

基于一种将具有电荷传输性的双极性主体材料与蓝、黄光客体材料共蒸的单层结构的同质结结构,制备了色温可调的白光有机电致发光器件(OLED)。由于不存在激子阻挡层,单层结构容易发生漏电流现象,致使OLED器件具有较高的工作电压和较低的电流/功率效率。在空穴/电子传输层进行p/n型掺杂的同质结结构则大大改善了器件性能。研究表明: 该种器件结构获得了相对较低的起压5.6 V,较高的电流效率2.64 cd/A和低效率滚降,其色坐标则随着亮度的增加沿着普朗克轨迹变化,产生类似于太阳光的发光特性。另外,对主体材料和共蒸层的电荷载流子的传输特性和复合机制也进行了一系列分析研究。