基于混合大气传输模型的单脉冲高功率微波大气击穿理论与实验研究

综合考虑高功率微波强电场作用下的热致快速电子效应、碰撞频率、电离频率等充分体现高功率微波特性的参量模型,基于高功率微波混合大气传输模型,提出了单脉冲高功率微波混合大气统一非线性击穿模型,定义了单脉冲高功率微波击穿阈值.理论研究结果表明:考虑中性气体分子极化作用以及电子的碰撞热效应后,大气击穿时对应的等离子体频率明显变大;大气击穿阈值随高度的增加先逐渐减小然后增大,在30-60 km区域存在一个极小值.开展了X波段窄带高功率微波单脉冲大气击穿实验研究,得到了典型条件下的高功率微波击穿现象、波形和阈值,且与理论结果一致性较好.     

纳秒脉冲下高能量快电子逃逸过程的计算

基于快电子的逃逸击穿机理将是一种能解释纳秒脉冲高过电压倍数下气体放电现象的理论，对高能量快电子的逃逸运动、碰撞电离引导电子崩的发展等进行了分析，并根据电子能量与阻力关系式，对电子的俘获或逃逸过程进行了计算.结果表明外加场强越高，更多的电子能逃逸，逃逸的能量阈值越低，气压对电子的逃逸过程影响也较大.同时也定性描述了纳秒脉冲下逃逸击穿放电过程. 关键词： 气体放电 快电子 逃逸击穿 纳秒脉冲     

FDTD方法分析高功率微波对大气的电离与击穿

 应用麦克斯韦方程和电子流体方程,利用时域有限差分方法(FDTD)计算模拟了高功率微波(HPM)对大气的电离与击穿;该方法用瞬时电场代替等效电场,时刻更新大气电离击穿过程中的电离频率和碰撞频率,消除了近似解析法未考虑大气电离击穿过程中电场幅度衰减而引起的误差,计算得到击穿阈值大小随海拔高度的变化趋势与文献所得的变化趋势相吻合,其值略大于近似解析解;并通过仿真计算分析了HPM脉冲幅值、脉宽以及海拔高度等参数对大气击穿的影响。     

Laser-induced ionization and intrinsic breakdown of wide band-gap solids

A simple scaling of bulk laser-induced breakdown threshold for wide band-gap solids is derived on the basis of a recent modification of the Keldysh photo-ionization model [43, 46]. Contrary to most traditional models, the modification is based on rigorous energy dependence of reduced effective electron–hole mass. The dependence leads to a specific ionization regime with an extremely high ionization rate resulting in intensive generation of conduction-band electrons. The regime is characterized by a well-determined threshold intensity that is proposed to be associated with the threshold of bulk intrinsic laser-induced breakdown (LIB) by visible and near-infra-red laser radiation. That allows deriving dependence of LIB threshold on laser and material parameters. The presented model provides explanation for the experimental results on LIB thresholds that have not received theoretical interpretation. In particular, it reproduces empirical dependence of breakdown threshold on the average inter-atomic spacing derived from the experimental data. The LIB threshold evaluated from the presented model is very close to experimental data on bulk LIB by tightly focused beams in wide band-gap solids. PACS 78.47.+p; 42.50.Hz; 42.50.Ct     

Air breakdown induced by the microwave with two mutually orthogonal and heterophase electric field components

The air breakdown is easily caused by the high-power microwave, which can have two mutually orthogonal and heterophase electric field components. For this case, the electron momentum conservation equation is employed to deduce the electric field power and effective electric field for heating electrons. Then the formula of the electric field power is introduced into the global model to simulate the air breakdown. The breakdown prediction from the global model agrees well with the experimental data. Simulation results show that the electron temperature is sensitive to the phase difference between the two electron field components, while the latter can affect obviously the growth of the electron density at low electron temperature amplitudes. The ionization of nitrogen and oxygen induces the growth of electron density, and the density loss due to the dissociative attachment and dissociative recombination is obvious only at low electron temperatures.     

The wavelength dependence of gold nanorod‐mediated optical breakdown during infrared ultrashort pulses

This paper investigates the wavelength dependence of the threshold of gold nanorod‐mediated optical breakdown during picosecond and femtosecond near infrared optical pulses. It was found that the wavelength dependence in the picosecond regime is governed solely by the changes of a nanorod's optical properties. On the other hand, the optical breakdown threshold during femtosecond pulse exposure falls within one of two regimes. When the ratio of the maximum electric field from the outside to the inside of the nanorod is less then 7 (the absorption regime) the seed electrons are initiated by photo‐thermal emission, and the wavelength dependence in the threshold of optical breakdown is the result of optical properties of the nanoparticle. When the ratio is greater than 7 (the near‐field regime) more seed electrons are initiated by multiphoton ionization, and the wavelength dependence of the threshold of optical breakdown results from a combination of nanorod's optical properties and transitions in the order of multiphoton ionization. The findings of this study can guide the design of nanoparticle based optical breakdown applications. This analysis also deepens the understanding of nanoparticle‐mediated laser induced breakdown for picosecond and femtosecond pulses at near infrared wavelengths.

     

Investigation of the threshold intensity versus gas pressure in the breakdown of helium by 248 nm laser radiation

An investigation of the unexpectedly strong dependence of the threshold intensity on the gas pressure in the experimental study on the breakdown of He by short laser wavelength (Turcu et al., in Opt Commun, 134:66–68, 1997) is presented. A modified electron cascade model is applied (Evans and Gamal, in J Phys D Appl Phys, 13:1447–1458, 1980). Computations revealed reasonable agreement between the calculated thresholds and the measured ones. Moreover, the calculated electron energy distribution function and its parameters proved that multiphoton ionization of ground and excited atoms is the main source for the seed electrons, which contributes to the breakdown of helium. The effect of diffusion losses over pressures <1,000 Torr elucidated the origin of the strong dependence of the threshold intensity on the gas pressure. Collisional ionization dominates only at high pressures. No evidence for recombination losses is observed for pressures up to 3,000 Torr.     

Mechanisms of femtosecond laser-induced breakdown and damage in MgO

Single-shot laser damage threshold of MgO for 40-986 fs, 800 nm laser pulses is reported. The pump-probe measurements with femtosecond pulses were carried out to investigate the time-resolved electronic excitation processes. A theoretical model including conduction band electrons (CBE) production and laser energy deposition was applied to discuss the roles of multiphoton ionization (MPI) and avalanche ionization in femtosecond laser-induced dielectric breakdown. The results indicate that avalanche ionization plays the dominant role in the femtosecond laser-induced breakdown in MgO near the damage threshold.     

Picosecond laser-induced damage morphology: Spatially resolved microscopic plasma sites

The morphology just above threshold of damage sites caused by picosecond 1.06 μm laser pulses is shown to consist of a collection of micron-sized, spatially distinct vestiges of individual plasmas. From the observed site density, the density of electrons which may initiate breakdown can be inferred. The morphology is consistent with an avalanche ionization model, but not with absorbing inclusion damage.     

Air ionization in a near-critical electric field

A set of experimental dependences of the air ionization effective rate on the electric field strength is presented. The concept of the critical breakdown field is discussed. It is indicated that experimental data are quantitatively inconsistent with analytical results based on this concept. This inconsistency is eliminated if the ionization balance takes into account not only dissociative adhesion of electrons to oxygen molecules but also their detachment from the molecules that gained a charge during the charge exchange process. Based on the results obtained, a new physical interpretation of the critical field is suggested. A formula for the effective rate of air ionization in near-critical fields is derived.     

高温气体中的激光击穿效应

 通过对电子能量分布函数所满足的Boltzmann方程的求解,得到了高温氧原子气体中激光产生电离击穿效应时的束流强度阈值。这一阈值远小于在低温氧分子气体中产生电离击穿的阈值,最多可相差两个数量级。导致这一现象出现的主要原因是原子和分子的能级分布和激发自由度有很大的差别。     

高功率激光表面大气击穿阈值的波长关系

通过对大气击穿的物理机制、低空大气中的自由电子及其寿命和电离机制进行讨论,给出了高功率激光大气击穿较为明晰的物理图像。并通过理论分析,给出了激光大气击穿阈值的波长关系,对给定波长激光的大气击穿阈值可以作出迅速的估值,是一种较为简捷的方法     

微波大气击穿阈值的理论研究

本文通过对使用有效场强(或均方根场强)得到的微波大气击穿阈值表达式进行讨论, 指出其推导中所做的假设及这些假设应用到微波大气击穿过程中存在的问题. 然后分别使用解析理论和数值模拟对微波大气击穿过程中的有效电子温度变化过程和击穿阈值进行研究, 并将其与直流电场进行比较. 分析发现在高气压下, 电子能量转移频率高, 有效电子温度随电场大幅振荡, 由于电离频率随有效电子温度的增长率大于电子能量损失随有效电子温度的增长率, 因此在高气压时, 微波大气击穿阈值低于使用有效场强的击穿阈值. 通过大量分析, 给出了理论推导和数值模拟得到的微波大气击穿阈值拟合表达式.     

纳秒脉冲气体放电机理探讨

 经典Townsend机理和流注理论是气体放电研究的基础,但在解释纳秒脉冲气体放电时均存在一定缺陷。基于经典气体放电理论,探讨纳秒脉冲气体放电机理,分析流注理论判据在纳秒脉冲气体放电中的有效性,解释纳秒脉冲下电子逃逸现象和基于电子逃逸的快速电离波击穿理论,仿真计算高能快电子的逃逸过程。结果认为基于高能量快电子的逃逸击穿将是可能解释纳秒脉冲下气体放电现象的依据。     

低能He~(2+)与He原子碰撞转移电离出射电子能谱研究

利用反应显微成像谱仪对70和100keV He2+与He原子碰撞转移电离(TI)过程中不同出射角度的电子能谱进行了测量,观测到出射电子能谱具有如下分布特征:出射电子速度分布介于0和入射离子速度vp之间;在不同出射角度电子能谱分布均有一极大值存在,随着出射角度的增大,能谱分布极大值逐渐减小;当电子出射角度等于45°时,多数电子集中在0eV附近。上述特征可由低能离子-原子碰撞"准分子"模型进行定性解释。在100keV He2+-He转移电离出射电子能谱中有靶电子被俘获至散射离子连续态(electron capture to continuum,简称ECC)电子的贡献,这可看做是动力学两步过程的作用。     

110 GHz太赫兹波大气击穿阈值及最大传输能量密度

随着110 GHz高功率太赫兹波功率容量的提升,其引起的大气击穿问题越来越受到重视。将若干等效电离参数表达式引入到电子雪崩密度方程中,计算了不同压强下的大气击穿阈值。结果表明,由Ali等效电离参数得到的110 GHz击穿阈值与实验数据符合得很好。在此基础上,利用Ali等效电离参数对逃逸传输能量密度与太赫兹波振幅的关系进行了分析。结果表明,当太赫兹波振幅小于击穿阈值时,逃逸传输能量密度随功率密度的增加线性增加;当太赫兹波振幅大于击穿阈值时,逃逸传输能量密度随功率密度先减小后增大。     

AN APPROACH OF ESTIMATING EXCITATION CROSS SECTIONS IN MULTIPHOTON PROCESSES

We suggest a simple approach to roughly estimate the excitation cross sections of various steps in a multiphoton ionization (or dissociation) process by applying the measured dependence of product signal on laser intensity. The validity of this method is demonstrated theoretically by means of the rate equations based upon a two-step kinetic model and can, in principle, be extended to the multiphoton process with steps more than two. Some results of numerical test and experiment are quoted.     

Activation of Mg-doped P-GaN by using two-step annealing

One- and two-step rapid thermal annealing (RTA) for activating Mg-doped p-type GaN films had been performed to compare with conventional furnace annealing (CFA). The two-step annealing process consists of two annealing steps: the first step is performed at 750 °C for 1 min and the second step is performed at 600 °C for 5 min in pure O₂ or air ambient. It is found that the samples annealed in air ambient exhibit poor electrical properties as compared to those annealed in pure O₂. Compared to one-step RTA annealing and CFA annealing, the samples with two-step annealing exhibit higher hole concentration and lower resistivity. This means that the two-step annealing is a powerful method to enhance the electrical performance of Mg-doped p-type GaN films. Similar results were also evidenced by photoluminescence (PL) measurement. Possible mechanism was confirmed by secondary ion mass spectrometry analysis.     

初始电子密度对光学薄膜激光损伤机制的影响

光学元件的激光损伤问题是激光器件向高功率密度方向发展中必须认识和克服的问题.基于Forkker-Planck方程,研究了激光与材料相互作用时的雪崩电离机制、多光子电离机制以及联合两种机制的情况.雪崩电离的产生需要一定密度的初始自由电子存在,该自由电子可以是材料中原本就存在的,也可能是光电离产生的.着重分析了材料中的初始自由电子对材料电离机制的影响.结果表明,雪崩过程在激光作用一段时间后会达到一个稳定的电离阶段(以自由电子平均能量不随时间变化为特征,且此时雪崩电离为材料电离的主导机制),该时间与光电离速率、材料中初始自由电子密度有关.材料中的初始自由电子可以在一定程度上掩盖光电离的作用效果.     

初始电子密度对光学薄膜激光损伤机制的影响

光学元件的激光损伤问题是激光器件向高功率密度方向发展中必须认识和克服的问题.基于Forkker-Planck方程,研究了激光与材料相互作用时的雪崩电离机制、多光子电离机制以及联合两种机制的情况.雪崩电离的产生需要一定密度的初始自由电子存在,该自由电子可以是材料中原本就存在的,也可能是光电离产生的.着重分析了材料中的初始自由电子对材料电离机制的影响.结果表明,雪崩过程在激光作用一段时间后会达到一个稳定的电离阶段（以自由电子平均能量不随时间变化为特征,且此时雪崩电离为材料电离的主导机制）,该时间与光电离速率、材料中初始自由电子密度有关.材料中的初始自由电子可以在一定程度上掩盖光电离的作用效果.
关键词:初始电子;激光损伤;光电离;雪崩电离