Pseudo-capacitive properties of LiCoO<Subscript>2</Subscript>/AC electrochemical capacitor in various aqueous electrolytes

LiCoO₂ particles were synthesized by a sol-gel process. X-ray diffraction analysis reveals that the prepared sample is a single phase with layered structure. A hybrid electrochemical capacitor was fabricated with LiCoO₂ as a positive electrode and activated carbon (AC) as a negative electrode in various aqueous electrolytes. Pseudo-capacitive properties of the LiCoO₂/AC electrochemical capacitor were determined by cyclic voltammetry, charge–discharge test, and electrochemical impedance measurement. The charge storage mechanism of the LiCoO₂-positive electrode in aqueous electrolyte was discussed, too. The results showed that the potential range, scan rate, species of aqueous electrolyte, and current density had great effect on capacitive properties of the hybrid capacitor. In the potential range of 0–1.4 V, it delivered a discharge specific capacitance of 45.9 Fg^–1 (based on the active mass of the two electrodes) at a current density of 100 mAg^–1 in 1 molL^–1 Li₂SO₄ aqueous electrolyte. The specific capacitance remained 41.7 Fg^–1 after 600 cycles.     

Synthesis of ZnAl<Subscript>2</Subscript>O<Subscript>4</Subscript>/α-Al<Subscript>2</Subscript>O<Subscript>3</Subscript> complex substrates and growth of GaN films

With the solid phase reaction between pulsed-laser-deposited (PLD) ZnO film and α-Al₂O₃ substrate, ZnAl₂O₄/α-Al₂O₃ complex substrates were synthesized. X-ray diffraction (XRD) spectra show that as the reaction proceeds, ZnAl₂O₄ changes from the initial (111)-oriented single crystal to poly-crystal, and then to inadequate (111) orientation. Corresponding scanning electron microscope (SEM) images indicate that the surface morphology of ZnAl₂O₄ transforms from uniform islands to stick structures, and then to bulgy-line structures. In addition, XRD spectra present that ZnAl₂O₄ prepared at low temperature is unstable at the environment of higher temperature. On the as-obtained ZnAl₂O₄/α-Al₂O₃ substrates, GaN films were grown without any nitride buffer using light-radiation heating low-pressure MOCVD (LRH-LP-MOCVD). XRD spectra indicate that GaN film on this kind of complex substrate changes fromc-axis single crystal to poly-crystal as ZnAl₂O₄ layer is thickened. For the single crystal GaN, its full width at half maximum (FWHM) of X-ray rocking curve is 0.4°. Results indicate that islands on thin ZnAl₂O₄ layer can promote nucleation at initial stage of GaN growth, which leads to the (0001)-oriented GaN film.     

Characteristics of electron beam evaporated nanocrystalline SnO2 thin films annealed in air

Tin oxide (SnO₂) thin films (about 200 nm thick) have been deposited by electron beam evaporation followed by annealing in air at 350-550 °C for two hours. Optical, electrical and structural properties were studied as a function of annealing temperature. The as-deposited film is amorphous, while all other annealed films are crystalline (having tetragonal structure). XRD suggest that the films are composed of nanoparticles of 5-10 nm. Raman analysis and optical measurements suggest quantum confinement effects that are enhanced with annealing temperature. For instance, Raman peaks of the as-deposited films are blue-shifted as compared to those for bulk SnO₂. Blue shift becomes more pronounced with annealing temperature. Optical band gap energy of amorphous SnO₂ film is 3.61 eV, which increases to about 4.22 eV after crystallization. Two orders of magnitude decrease in resistivity is observed after annealing at 350-400 °C due to structural ordering and crystallization. The resistivity, however, increases slightly with annealing temperature above 400 °C, possibly due to improvement in stoichiometry and associated decrease in charge carrier density.     

Accuracy in determination of the temperature and partial pressure of CO<Subscript>2</Subscript> in CO<Subscript>2</Subscript>:N<Subscript>2</Subscript>:H<Subscript>2</Subscript>O:NO<Subscript>2</Subscript> mixtures by multiple-frequency laser probing

We present the results of analysis of the errors introduced by hot-band transitions 11¹0-01¹1, 03¹0-01¹1, 12⁰0-12⁰1 of the CO₂ molecule and the absorption lines of the H₂O and NO₂ molecules in determination of the temperature and partial pressure of CO₂, included in the gas mixture CO₂: N₂:H₂O: NO₂ at atmospheric pressure, by multiple-frequency laser probing using a CO₂ laser tunable over the lines of the 00⁰1-[10⁰0,02⁰0]_I,II ground-state laser transitions. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 74, No. 6, pp. 810–815, November–December, 2007.     

Anomalous absorption in H<Subscript>2</Subscript>CN and CH<Subscript>2</Subscript>CN molecules

Structures of H₂CN and CH₂CN molecules are similar to that of H₂CO molecule. The H₂CO has shown anomalous absorption for its transition 1₁₁–1₁₀ at 4.8 GHz in a number of cool molecular clouds. Though the molecules H₂CN and CH₂CN have been identified in TMC-1 and Sgr B2 through some transitions in ortho as well as in para species, here we have investigated the condition under which transitions 1₁₁–1₁₀ and 2₁₂–2₁₁ of these molecules may show anomalous absorption. For the present investigation, we have calculated energy levels and radiative transition probabilities. However, we have used scaled values for collisional rate coefficients. We found that relative values of collisional rate coefficients can produce the required anom-alous absorption in 1₁₁–1₁₀ and 2₁₂–2₁₁ transitions in the molecules.      

Absorption by CS<Subscript>2</Subscript> molecules on “hot” band emission lines from a TEA CO<Subscript>2</Subscript> laser

We have measured absorption of emission from a TEA CO₂ laser, lasing on hot band lines, in pure CS₂ and a mixture of CS₂ with air, and we have determined the optimal lines for optical excitation. Numerical modeling has shown that as the peak intensity of the pump radiation is increased, we observe absorption saturation, the extent of which decreases as the pressure increases. The major factor responsible for absorption saturation is the “rotational bottleneck” effect. Depending on the peak intensity of the radiation, addition of a buffer gas can lead to an increase or decrease in the absorption. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 74, No. 1, pp. 61–66, January–February, 2007.     

Preparation of TiO<Subscript>2</Subscript>-coated LiCo<Subscript>1/3</Subscript>Ni<Subscript>1/3</Subscript>Mn<Subscript>1/3</Subscript>O<Subscript>2</Subscript> by electrostatic self-assembly method and its properties

A precursor of TiO₂–LiCo_1/3Ni_1/3Mn_1/3O₂ was prepared by electrostatic self-assembly method. The final product was obtained by heating the precursor at 400–450 °C for 4–6 h in air. X-ray diffraction (XRD), scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS), and electrochemical tests were used to examine the structural, morphology, elementary valence, and electrochemical characteristics. XRD indicated that the TiO₂-coated material can be indexed by α-NaFeO₂ layered structure, which belongs to hexagonal-type space group R3m. XPS results confirmed the existence of TiO₂ compound on the surface of the coated sample. The SEM image showed that the material had spherically porous morphology with the uniform size about 6 μm. The initial charge–discharge capacity of the TiO₂-coated LiCo_1/3Ni_1/3Mn_1/3O₂ material was 168.8/160.0 mAh/g. After 60 cycles, the discharge capacity of the TiO₂-coated LiCo_1/3Ni_1/3Mn_1/3O₂ sample was 147.0 mAh/g, and the coulombic efficiency was 94.0%. Compared with the uncoated sample, the electrochemical performance of TiO₂-coated LiCo_1/3Ni_1/3Mn_1/3O₂ was improved.     

The magnetic mechanism of Zn<Subscript>0.93</Subscript>Co<Subscript>0.07</Subscript>O thin films

Zn_0.93Co_0.07O thin films infiltrated with nitrogen and aluminum were prepared by means of magneton sputtering. The structural and magnetic properties of the films were studied systematically. The materials were single phase (wurtzite structure) with surfaces showing signs of homogeneous growth. The films were ferromagnetic at room temperature, and magnetic domains could be clearly observed on the surfaces. In the case of Al infiltration, saturated magnetization increased with Al concentration increasing; whereas in the case of N infiltration, saturated magnetization decreased with the increase in N concentration. The results show that ferromagnetic interactions in Co-doped ZnO diluted magnetic semiconductor may be transferred by electrons. Supported by the National Natural Science Foundation of China (Grant No. 10674059) and the Major Project of National Basic Research Program of China (Grant No. 2005CB623605)     

Influence of the sample orientation in Sn<Subscript>2</Subscript>P<Subscript>2</Subscript>S<Subscript>6</Subscript> crystals on the hydrostatic piezoelectric coefficients

The influence of the sample orientation on the effective value of the hydrostatic piezoelectric coefficients d _h ⁽ⁱ⁾ of Sn₂P₂S₆ crystals has been studied. The hydrostatic piezoelectric coefficients d _h ⁽¹⁾ and d′ _h ⁽³⁾ , were measured, d _h ⁽¹⁾ =(244±3) pC/N and d′ _h ⁽³⁾ =(92±1) pC/N. The hydrostatic piezoelectric coefficient d _h ⁽³⁾ for orthogonal axis system was calculated to be d _h ⁽³⁾ =(87±2) pC/N. The, optimal orientation of the sample has been found as (Xy l)−20°-cut. Maximal value of the effective hydrostatic piezoelectric coefficient d _h ⁽¹⁾ equals 260 pC/N. Double rotated samples were also studied. The orientation of the samples insensitive to the pressure has been found. The theoretical mean value of hydrostatic piezoelectric coefficient (d _h ) _mean corresponding to randomly oriented Sn₂P₂S₆ grains in a poled composite has been calculated to be (d _h ) _mean =136 pC/N.     

Radiation-induced defects in thin Cu(In,Ga)Se<Subscript>2</Subscript> films on exposure to high-energy electron irradiation

At 4.2 K, the photoluminescence spectra of Cu(In,Ga)Se₂ films irradiated by electrons with an energy of 5 MeV displayed the 0.93-and 0.79-eV bands that owe their origin to the radiative recombination of nonequilibrium charge carriers on radiation-induced defects. The position of the energy levels of the defects is determined and their nature is discussed. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 72, No. 6, pp. 805–808, November–December, 2005.     

VUV luminescence of Er<Superscript>3+</Superscript> ions in LiYF<Subscript>4</Subscript> and BaY<Subscript>2</Subscript>F<Subscript>8</Subscript> crystals

Vacuum ultraviolet luminescence of Er³⁺ ions in LiYF4 and BaY₂F₈ crystals has been investigated. It is revealed that under excitation by 193 nm radiation from an ArF excimer laser the interconfigurational 5d–4f radiative transitions in Er³⁺ ions are observed. It is shown that from the LiYF₄:Er crystal only the spin-forbidden luminescence (λ = 165 nm) is detected, whereas both the spin-forbidden (λ = 169 nm) and spin-allowed (λ = 160.5 nm) components are observed from the BaY₂F₈:Er crystal.     

Preparation and characterization of LiMn<Subscript>2</Subscript>O<Subscript>4</Subscript> nanorod by low heating solid state coordination method

Cathode material LiMn₂O₄ nanorod was prepared by annealing of the mixed precursor which was synthesized by low heating solid state coordination method using lithium acetate, manganese acetate and oxalic acid as starting materials. The structures and morphologies of the LiMn₂O₄ nanorod were investigated as a function of annealing temperature and time. The results showed that all samples in different annealing temperatures and time have the same spinel structure. The higher the annealing temperature is, the more complete the crystal structure forms, and the larger the particle size is. In addition, the electrochemical properties of the LiMn₂O₄nanorod were studied in this paper.     

One-step synthesis of colloidal Mn<Subscript>3</Subscript>O<Subscript>4</Subscript> and γ-Fe<Subscript>2</Subscript>O<Subscript>3</Subscript> nanoparticles at room temperature

A facile room-temperature synthesis has been developed to prepare colloidal Mn₃O₄ and γ-Fe₂O₃ nanoparticles (5 to 25 nm) by an ultrasonic-assisted method in the absence of any additional nucleation and surfactant. The morphology of the as-prepared samples was observed by transmission electron microscopy. High-resolution transmission electron microscopy observations revealed that the as-synthesized nanoparticles were single crystals. The magnetic properties of the samples were investigated with a superconducting quantum interference device magnetometer. The possible formation process has been proposed.     

Characterization of Y<Subscript>2</Subscript>BaCuO<Subscript>5</Subscript> nanoparticles synthesized by nano-emulsion method

Nanoscale yttrium–barium–copper oxide (Y₂BaCuO₅, Y211) particles were synthesized using the emulsion method and the solution method. The basic water-in-oil (w/o) emulsion system consisted of n-octane (continuous oil phase), cetyltrimethylammonium bromide (cationic surfactant), butanol (cosurfactant) and water. The composition of the emulsion system was varied and characterized by measuring the conductivity of the solutions and droplet size. The droplet size of emulsion was determined by using the dynamic light scattering method. The water content, cosurfactant content, and surfactant/n-octane ratio affected the droplet size which was in the range of 3–8 nm, and hence the w/o emulsion system was referred to as a nano-emulsion system. A model was used to verify the droplet size. The influence of salt (Y₂(NO₃)₃) content on the droplet size was investigated and the addition of salt reduced the droplet size. The effects of reaction time and temperature on the Y211 particle sizes were also investigated. The particles were characterized using the TEM, SEM, and XRD. Nanoparticles produced by the nano-emulsion method were calcined at 850°C to form the Y211 phase as compared to solid state processing temperature of 1050°C. Based on the TEM analysis, the average diameter of the Y211 particles produced using the nano-emulsion method was in the range of 30–100 nm. The effect of adding 15% Y211 nanoparticles to the superconductor YBCO-123 as flux pinning centers, was investigated, and the transition temperature was reduced by 3 K.     

Bi-Sb-Te基热电薄膜温差电池离子束溅射制备与表征

本文采用离子束溅射Bi/Te和Sb/Te二元复合靶,直接制备n型Bi₂Te₃热电薄膜和p型Sb₂Te₃热电薄膜.在退火时间同为1 h的条件下,对所制备的Bi₂Te₃薄膜和Sb₂Te₃薄膜进行不同温度的退火处理,并对其热电性能进行表征.结果表明,在退火温度为150 ℃时,制备的n型Bi₂Te₃关键词： 薄膜温差电池 2Te₃薄膜')" href="#">Sb₂Te₃薄膜 2Te₃薄膜')" href="#">Bi₂Te₃薄膜 离子束溅射     

Investigation on structural characteristics of PVDF–AgCF<Subscript>3</Subscript>SO<Subscript>3</Subscript>–Al<Subscript>2</Subscript>O<Subscript>3</Subscript> nanocomposite solid polymer electrolyte system

There has been an increasing interest towards the incorporation of nanosize ceramic fillers in polymer electrolytes. Solid polymer electrolytes based on polyvinylidene fluoride (PVDF), silver triflate (AgCF₃SO₃), and x wt% of aluminum oxide (Al₂O₃) nanopowders (where x = 1, 3, 5, and 10, respectively) have been prepared using solution casting technique. The structural characteristics of these thin film specimens were studied using Fourier transform infrared (FTIR) and X-ray diffraction (XRD) patterns at room temperature. The appearance of new absorption bands and gradual shifts observed in some characteristic peaks confirmed the complex formation between polyvinylidene fluoride and silver triflate. Furthermore, the addition of nanosized filler Al₂O₃ has also indicated the interaction of the filler with the polymer salt complex. The XRD patterns obtained for all these samples in the 2θ range 10° to 70° showed the amorphous nature of these samples. Paper presented at the Third International Conference on Ionic Devices (ICID 2006), Chennai, Tamilnadu, India, December 7–9, 2006.     

Surface morphology of PrBa<Subscript>2</Subscript>Cu<Subscript>3</Subscript>O<Subscript>7-δ</Subscript> single crystals after the long-lasting high-temperature reduction

The results of the detailed scanning electron microscopy study of PrBa₂Cu₃O_7-δ single crystals after the long-lasting high-temperature post-growth treatment are reported. The presence of the unstable decomposition products on the crystal surface indicates that the onset of superconductivity must be related to the structural transformations in the bulk (approximately 20% of the total volume of the examined crystals). The time-dependent character of the superconductivity in the Pr-123 crystals could be attributed to the migration of defects in the Pr−Ba sublattice from the bulk toward the surface.     

Factors affecting the superconductivity in the process of depositing Nd1.85Ce0.15CuO4-δ by the pulsed electron deposition technique

On SrTiO₃ single crystal substrate, by using the pulsed electron deposition technique, the high-quality electron doped Nd_1.85Ce_0.15CuO_4−δ superconducting film was successfully fabricated. After careful study on the R-T curves of the obtained samples deposited with different substrate temperatures, thicknesses, annealing methods and pulse frequencies, the effects of them on the superconductivity of the films were found, and the reasons were also analyzed. Additionally, by using the same model of the pulsed laser deposition technique, the relation between the target-to-substrate distance and the deposition pressure was drawn out as a quantitative one. Supported by the Key Project of Zhejiang Provincial Natural Science Foundation (Grant No. Z605131), the ‘100 Talents Project’ of Chinese Academy of Sciences, the Creative Research Group of National Natural Science Foundation of China (Grant No. 60321001) and the National Natural Science Foundation of China (Grant No. 60571029)     

Dry etching of CuCrO2 thin films

Highly conducting films of p-type CuCrO₂ are attractive as hole-injectors in oxide-based light emitters. In this paper, we report on the development of dry etch patterning of CuCrO₂ thin films. The only plasma chemistry that provided some chemical enhancement was Cl₂/Ar under inductively coupled plasma conditions. Etch rates of ∼500 Å min⁻¹ were obtained at chuck voltages around −300 V and moderate source powers. In all cases, the etched surface morphologies were improved relative to un-etched control samples due to the smoothing effect of the physical component of the etching. The threshold ion energy for the onset of etching was determined to be 34 eV. Very low concentrations (≤1 at.%) of residual chlorine were detected on the etched surfaces but could be removed by simple water rinsing.     

A new method to characterizing surface roughness of TiO2 thin films

Titanium dioxide (TiO₂) thin films have been widely coated in the self-cleaning glass for facade application. The benefit of these glasses is its ability to actively decompose organic compounds with the help of ultraviolet light. Understanding the surface roughness of TiO₂ thin films is important before manufacturing of self-cleaning glasses using TiO₂ thin films because surface roughness of TiO₂ thin films has highly significant influence on the photocatalytic performance. Traditional approach for measuring surface roughness of TiO₂ thin films is atomic force microscopy. The disadvantage of this approach include long lead-time and slow measurement speed. To solve this problem, an optical inspection system for rapidly measuring the surface roughness of TiO₂ thin films is developed in this study. It is found that the incident angle of 60° is a good candidate for measuring surface roughness of TiO₂ thin films and y=90.391x+0.5123 is a trend equation for predicting the surface roughness of TiO₂ thin films. Roughness average (Ra) of TiO₂ thin films (y) can be directly determined from the peak power density (x) using the optical inspection system developed. The results were verified by white-light interferometer. The measurement error rate of the optical inspection system developed can be controlled by about 8.8%. The saving in inspection time of the surface roughness of TiO₂ thin films is up to 83%.