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用紫外光电子能谱和同步辐射光电子能谱研究了Sm掺杂C60薄膜的价带电子结构.Sm的价电子大部分转移给C60,化学键以离子性为主.对于任何化学配比都没有观察到费米边,所以Sm富勒烯超导相在室温下为半导体性质.获得了很接近单相Sm2.75C60的样品在费米能级附近的电子态密度分布.固溶相的光电子发射与Sm2.75C60有明显区别.SmxC60关键词:
60的Sm填隙化合物')" href="#">C60的Sm填隙化合物
价带光电子能谱
电子结构 相似文献
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用拉曼散射光谱和X射线光电子能谱研究了GexSb20Se80-x(x=5 mol%, 10 mol%, 15 mol%, 17.5 mol%, 20 mol%和25 mol%)玻璃的结构. 通过对拉曼光谱和X射线光电子能谱(Ge 3d, Sb 4d 和Se 3d谱)进行分解, 发现当硫系玻璃处于富Se状态下时, 玻璃结构中会出现Se–Se–Se结构单元, 其数量随着Ge含量的增加而迅速减少, 并最终在Ge15Sb20Se65玻璃结构中消失; Ge和Sb原子分别以GeSe4/2 四面体和SbSe3/2三角锥结构单元在玻璃结构中出现, GeSe4/2四面体结构单元的数量会随着Ge浓度的增加而增加, 而SbSe3/2三角锥结构单元的数量基本保持稳定. 另一方面, 在缺Se的硫系玻璃中, 玻璃会有Ge–Ge和Sb–Sb同极键产生, 随着Ge含量的增大, 这种同极键的数量会越来越多; 而GeSe4/2四面体和SbSe3/2三角锥结构的数量则相应减少. 在所有玻璃样品的结构中均有同极键Se–Se的存在. 当玻璃组分越接近完全化学计量配比时, 异质键Ge–Se和Sb–Se将占据玻璃结构中的主导地位, 同极键Ge–Ge, Sb–Sb和Se–Se 的比例降为最小. 相似文献
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用X射线光电子能谱和同步辐射光电子能谱研究了Sb掺杂的钙钛矿型氧化物SrTi1-xSbxO3(x=0.05,0.10,0.15,0.20)薄膜的电子结构.薄膜由紫外脉冲激光淀积在SrTiO3(001)单晶衬底上.该薄膜系列在可见光波段透明,透过率均超过90%.其导电性与掺杂浓度有关,当Sb掺杂浓度x=0.05时,薄膜显示金属型导电性.X射线光电子能谱和同步辐射光电子能谱研究结果表明,Sb掺杂在母化合物SrTiO3的禁带内引入了浅杂质能级和深杂质能级.浅杂质能级上的退局域化电子离化到导带中会产生一定的传导电
关键词:
光电子能谱
光学透过率
脉冲激光沉积薄膜 相似文献
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Bi系铜氧化物超导体具有双Bi-O层结构,带结构理论计算显示,除Cu-O面参与金属导电外,Bi-O层的Bi6p-O2p带也穿过了费米能,对费米面有贡献.因此,有必要对Bi-O层的作用进行实验研究.本文用X-射线光电子能谱研究了Bi2Sr2-xLaxCaCu2Oy体系中La原子的占位及Bi和Cu原子的价态变化.分析表明,La主要替代了Sr位(位于Bi-O层和Cu-O层之间)的Sr,随着La的搀杂,Bi的平均价态上升,Cu的平均价态下降. 相似文献
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本文在固定Ga原子含量为8%的情况下,结合高分辨率X射线光电子能谱和拉曼散射光谱对硫系玻璃GexGa8S92-x(x=24%,26.67%,29.6%,32%和36%)的结构进行了研究.通过分析玻璃结构中各单元结构的演变情况,发现玻璃内部网络结构主要为S原子桥接GeS4和GaS4四面体结构.随着Ge含量的逐渐增大,S链状或环状结构单元迅速减少,并消失于Ge26.67Ga8S65.33玻璃组分中;而类乙烷结构S3Ge-GeS3中的Ge—Ge同极键和S3Ge/Ga-Ga/GeS3结构中的M—M (Ge—Ge,Ga—Ga或Ge—Ga)同极键同时出现于Ge29.6Ga8S62.4玻璃中,并且其结构数量随着Ge含量的增大而逐渐增加.由此可以判定,首先,在硫系玻璃GexGa8 相似文献
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采用X射线光电子能谱对Bi2Sr2CaCu2-xLixOy体系在真空中获得的清洁表面进行了研究。结果表明:Li的掺入对Bi和Sr的化学键性质几乎没有影响,而Ca,Cu,O的化学键性质有较大的变化,其结合能随着Li含量x的增加向高能方向移动。同时对真空中获得的清洁表面和普通表面样品O1s进行了比较,结果发现真空中获得的清洁样品O1s有一个峰(528.4eV),而普通表面样品O1s有两个峰(528.4eV)和(531eV),这表明O1s的高能峰是由污染产生的。
关键词: 相似文献
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Measurement of GaN/Ge(001) Heterojunction Valence Band Offset by X-Ray Photoelectron Spectroscopy 下载免费PDF全文
GUO Yan LIU Xiang-Lin SONG Hua-Ping YANG An-Li ZHENG Gao-Lin WEI Hong-Yuan YANG Shao-Yan ZHU Qin-Sheng WANG Zhan-Guo 《中国物理快报》2010,27(6):183-186
X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) at the GaN/Ge heterostructure interface. The VBO is directly determined to be 1.13 ±0.19 eV, according to the relationship between the conduction band offset AEc and the valence band offset △Ev:△Ec =EgGaN -EgGe - △Ev, and taking the room-temperature band-gaps as 3.4 and 0.67eV for GaN and Ge, respectively. The conduction band offset is deduced to be 1.6±0.19 eV, which indicates a type-I band alignment for GaN/Ge. Accurate determination of the valence and conduction band offsets is important for the use of GaN/Ge based devices. 相似文献
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Deisenhofer J Braak D Krug von Nidda HA Hemberger J Eremina RM Ivanshin VA Balbashov AM Jug G Loidl A Kimura T Tokura Y 《Physical review letters》2005,95(25):257202
We report on the discovery of a novel triangular phase regime in the system La1-xSrxMnO3 by means of electron spin resonance and magnetic susceptibility measurements. This phase is characterized by the coexistence of ferromagnetic entities within the globally paramagnetic phase far above the magnetic ordering temperature. The nature of this phase can be understood in terms of Griffiths singularities arising due to the presence of correlated quenched disorder in the orthorhombic phase. 相似文献
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Based on the evolution of the quantity of Sr in Pr0.63Dy0.37-xSrxMnO3 (x = 0.00 and x = 0.30) systems and the different heat treatments (500, 800 and 1300 °C), various physical changes are illustrated by these samples. X-ray diffraction patterns were carried out revealing that the heat temperature can affect the structure of the systems.Zero-Field-Cooled and Field-Cooled magnetizations revealed the appearance of different magnetic transitions; from the paramagnetic state to the antiferromagnetic one. Once increasing the temperature of heat up to 1300 °C and for x = 0.30, the system presents a ferromagnetic order at Curie temperature that is around 200 K. Magnetic hysteresis loops confirm the transitions presented by the magnetic measurements.The heating temperature affected also the evolution of the magnetic entropy change. All samples show an important increase in the data values of the maximum of the magnetic entropy change while augmenting the applied magnetic field. We note an important result that is the refrigerant capacity of the x = 0.30 sample heated at 1300 °C is 725% compared to that at 500 °C. 相似文献
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ZHANGH ZHANGP.X ZHANGG.Y YUL G.Cristiani H.U.Habermeier 《光散射学报》2005,17(1):87-89
In this paper, we briefly report the property difference of La_(1-x)Sr_xMnO_3 (x=0.1) ultra-thin films (~([001]) orientation) at different thickness grown on SrTiO_3 (100) substrate.It is found that the magnetic interaction is greatly enhanced when film t… 相似文献
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ZHANGH ZHANGP.X ZHANGG.Y YUL G.Cristiani H.U.Habermeier 《光散射学报》2005,17(1):84-86
Both tensile strain and compressive strain effects on the properties of La_(1-x)Sr_xMnO_3 (x=0.1) films were investigated.The films on SrTiO_3 (100) display 'unusual' tensile strain~([1]), which supports a ferromagnetic metallic behavior when film thickness is larger than 10nm.The films on NdGaO_3 (100) presenting compressive strain, on the other hand, demonstrate strongly enhanced insulating behavior.Inordertoobtainunambiguousresults,allfilmsampleswerepreparedusingthesamedepositionconditi… 相似文献
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