Influence of substrate temperature on physical properties of sprayed Zn0.85Mn0.15O films

Zn_1−xMn_xO thin films have been synthesized by chemical spray pyrolysis at different substrate temperatures in the range, 250–450 °C for a manganese composition, x = 15%, on corning 7059 glass substrates. The as-grown layers were characterized to evaluate their chemical and physical behaviour with substrate temperature. The change of dopant level in ZnO films with substrate temperature was analysed using X-ray photoelectron spectroscope measurements. The X-ray diffraction studies revealed that all the films were strongly oriented along the (0 0 2) orientation that correspond to the hexagonal wurtzite structure. The crystalline quality of the layers increased with the increase of substrate temperature up to 400 °C and decreased thereafter. The crystallite size of the films varied in the range, 14–24 nm. The surface morphological studies were carried out using atomic force microscope and the layers showed a lower surface roughness of 4.1 nm. The optical band gap of the films was ∼3.35 eV and the electrical resistivity was found to be high, ∼10⁴ Ω cm. The films deposited at higher temperatures (>350 °C) showed ferromagnetic behaviour at 10 K.     

Effect of Fe doping on the structural and gas sensing properties of ZnO porous microspheres

Fe-doped ZnO porous microspheres composed of nanosheets were prepared by a simple hydrothermal method combined with post-annealing, and characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), Brunauer–Emmett–Teller N₂ adsorption–desorption measurements and photoluminescence (PL) spectra. In this paper we report Fe doping induced modifications in the structural, photoluminescence and gas sensing behavior of ZnO porous microspheres. Our results show that the crystallite size decreases and specific surface area increases with the increase of Fe doping concentration. The PL spectra indicate that the 4 mol% Fe-doped ZnO has higher ratio of donor (V_O and Zn_i) to acceptor (V_Zn) than undoped ZnO. The 4 mol% Fe-doped ZnO sample shows the highest response value to ppb-level n-butanol at 300 °C, and the detected limit of n-butanol is below 10 ppb. In addition, the 4 mol% Fe -doped ZnO sample exhibits good selectivity to n-butanol. The superior sensing properties of the Fe-doped porous ZnO microspheres are contributed to higher donor defects contents combined with larger specific surface area.     

Optical properties of PMN–PT thin films prepared using pulsed laser deposition

(1 ? x)Pb(Mg_1/3Nb_2/3)O₃–xPbTiO₃ (PMN–PT) thin films have been deposited on quartz substrates using pulsed laser deposition (PLD). Crystalline microstructure of the deposited PMN–PT thin films has been investigated with X-ray diffraction (XRD). Optical transmission spectroscopy and Raman spectroscopy are used to characterize optical properties of the deposited PMN–PT thin films. The results show that the PMN–PT thin films of perovskite structure have been formed, and the crystalline and optical properties of the PMN–PT thin films can be improved as increasing the annealing temperature to 750 °C, but further increasing the annealing temperature to 950 °C may lead to a degradation of the crystallinity and the optical properties of the PMN–PT thin films. In addition, a weak second harmonic intensity (SHG) has been observed for the PMN–PT thin film formed at the optimum annealing temperature of 750 °C according to Maker fringe method. All these suggest that the annealing temperature has significant effect on the structural and optical properties of the PMN–PT thin films.     

Photoluminescence of chemical solution-derived amorphous ZnO layers prepared by low-temperature process

Growth characteristic and optical properties of the amorphous ZnO thin films prepared on soda-lime–silica glass substrates by chemical solution process at 100 and 200 °C were investigated by using X-ray diffraction analysis, scanning probe microscope, ultraviolet spectrophotometer, and photoluminescence. The films exhibited an amorphous pattern even when finally heat treated at 100–200 °C for 60 min. The photoluminescence spectrum of amorphous ZnO films shows a strong near-band-edge emission, while the visible emission is nearly quenched.     

Comparative study on structural and optical properties of ZnO thin films prepared by PLD using ZnO powder target and ceramic target

Zinc oxide thin films have been obtained in O₂ ambient at a pressure of 1.3 Pa by pulsed laser deposition (PLD) using ZnO powder target and ceramic target. The effect of temperature on structural and optical properties of ZnO thin films was investigated systematically by XRD, SEM, FTIR and PL spectra. The results show that the best structural and optical properties can be achieved for ZnO thin film fabricated at 700 °C using powder target and at 400 °C using ceramic target, respectively. The PL spectrum reveals that the efficiency of UV emission of ZnO thin film fabricated by using powder target is low, and the defect emission of ZnO thin film derived from Zn_i and O_i is high.     

Nanostructure and optical properties of M doped ZnO (M=Ni, Mn) thin films prepared by sol-gel process

The transparent thin films of undoped, Mn-doped, and Ni-doped zinc oxide (ZnO) have been deposited on glass substrates via sol-gel technique using zinc acetate dehydrate, nickel chloride, and manganese chloride as precursors. The structural properties and morphologies of the deposited undoped and doped ZnO thin films have been investigated. X-ray diffraction (XRD) spectra, scanning electron microscopy (SEM), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS) were used to examine the morphology and microstructure of the thin films. Optical properties of the thin films were determined by photoluminescence (PL) and UV/vis spectroscopy. The analyzed results indicate that the obtained films are of good crystal quality and have smooth surfaces, which have a pure hexagonal wurtzite ZnO structure without any Mn or Ni related phases. The band gap energy was estimated by Tauc's method and found to be 3.28, 3.26, and 3.34 eV for ZnO, Ni-doped ZnO, and Mn-doped ZnO thin films at room temperature, respectively. Room temperature photoluminescence is observed for the ZnO, Ni-doped ZnO, and Mn-doped ZnO thin films.     

Acceptors related to group I elements in ZnO ceramics

ZnO ceramics doped with Li, Na or K were sintered in air for 4 h at 1000 °C. Electrical conductivity as well as photoluminescence (PL), PL excitation and photoconductivity spectra were measured and compared with those in undoped samples. The influence of both fast and slow cooling of the samples from 1000 °C on measured characteristics was investigated. The yellow–orange PL bands associated with the deep acceptors Li_Zn, Na_Zn and K_Zn were observed and the corresponding PL excitation spectra were determined. These acceptors were found to form some complexes with other lattice defects.     

Observation of negative photoconductivity in (ZnO)x(CdO)1−x films

In this study, (ZnO)_x(CdO)_1?x films were prepared by ultrasonic spray pyrolysis (USP) technique at a substrate temperature of 400 °C. X-ray diffraction patterns of the films indicate that the (ZnO)_x(CdO)_1?x films have hexagonal wurtzite and cubic structure for the constituent materials. A decrease in the average transmission with increasing quantity of the cadmium acetate dehydrate in the sprayed solution was observed. The photoconductivity transients were performed using UV light, which has 360 nm wavelength. After light cut off, conductivity changed slowly, and the decay time was thousands of seconds. The films with x=0.2 and 0 exhibited negative photoconductivity. Temperature-dependent photoconductivity and dark conductivity measurements were performed and negative photoconductivity was also observed for the same films (x=0.2 and 0). Photoluminescence measurements were performed and band-to-band excitation energies of (ZnO)_x(CdO)_1?x films were determined. Band gap of the pure CdO film was found as 3.11 eV, interestingly.     

Characterization of CdS1−xSex thin films by chemical bath deposition technique

The cadmium sulfo selenide CdS_1?xSe_x thin films were chemical bath deposited in aqueous media onto coated glass substrates. As-deposited CdS_1?xSe_x thin films were annealed at 350 °C in air for 30 min. The structural, morphological, compositional and optical properties of deposited CdS_1?xSe_x thin films were studied using X-ray diffractometer (XRD), scanning electron microscopy (SEM), Energy dispersive analysis by X-ray (EDAX), and UV-Vis-NIR spectrophotometer respectively. X-ray diffraction patterns of CdS_1?xSe_x thin films reveal the polycrystalline nature and hexagonal structure. The microstructural parameters such as crystallite size (D), micro strain (?), and dislocation density were calculated and found to depend on compositions. The surface morphology and grain size are found to be influenced with the annealing temperature. The presence of Cd, S and Se of the CdS_1?xSe_x thin films and the composition of CdS_1?xSe_x thin film are estimated by EDAX analysis. The optical transmittance and absorption spectra were recorded in the range 400–2500 nm. The band gap of the CdS_1?xSe_x thin films is found to decrease from 2.5 eV to 1.75 eV.     

Thermoluminescence,photoluminescence and EPR studies on Mn2+ activated yttrium aluminate (YAlO3) perovskite

Thermoluminescence (TL) measurements were carried out on undoped and Mn²⁺ doped (0.1 mol%) yttrium aluminate (YAlO₃) nanopowders using gamma irradiation in the dose range 1–5 kGy. These phosphors have been prepared at furnace temperatures as low as 400 °C by using the combustion route. Powder X-ray diffraction confirms the orthorhombic phase. SEM micrographs show that the powders are spherical in shape, porous with fused state and the size of the particles appeared to be in the range 50–150 nm. Electron Paramagnetic Resonance (EPR) studies reveal that Mn ions occupy the yttrium site and the valency of manganese remains as Mn²⁺. The photoluminescence spectrum shows a typical orange-to-red emission at 595 nm and suggests that Mn²⁺ ions are in strong crystalline environment. It is observed that TL intensity increases with gamma dose in both undoped and Mn doped samples. Four shouldered TL peaks at 126, 240, 288 and 350 °C along with relatively resolved glow peak at 180 °C were observed in undoped sample. However, the Mn doped samples show a shouldered peak at 115 °C along with two well defined peaks at ～215 and 275 °C. It is observed that TL glow peaks were shifted in Mn doped samples. The kinetic parameters namely activation energy (E), order of kinetics (b), frequency factor (s) of undoped, and Mn doped samples were determined at different gamma doses using the Chens glow peak shape method and the results are discussed in detail.     

PPV/PVA/ZnO nanocomposite prepared by complex precursor method and its photovoltaic application

In this article, we describe a new method to prepare a ZnO and conjugated polymer nanocomposite and its application in bulk-heterojunction solar cells. The composite was composed of zinc oxide (ZnO) and poly(phenylene vinylene)/poly(vinyl alcohol) (PPV/PVA). For the preparation, the composite was prepared first through the complex reaction between Zn²⁺ ion and –OH of the PVA–PPV precursor by simply mixing zinc salts and a PVA–PPV precursor aqueous solution at 70 °C. By addition of a concentrated aqueous ammonia into the system, highly regular Zn(OH)₂ nanodots were formed and dispersed in the PVA/PPV precusor mixed solution. The PVA/PPV precursor can well bind Zn²⁺ ion through complex interaction, so act as a template to direct the distribution of ZnO in the process. The nanocomposite films were finally obtained by solution casting and subsequently treated by heating samples at 160 °C for 6 h. TEM observations showed that ZnO nanodots uniformly dispersed in PVA–PPV mixtures. The resulting nanocomposite films possess a large interfacial area between the electron donor and acceptor of the bulk-heterojunction. Improved charge seperation and collection are evidenced by the large photoluminescence intensity difference between pure PPV and composites films, which result in the increase in both open circuit voltage and short circuit current of the hybrid solar cells.     

Microstructural investigation of Fe–Zr–B–Ag soft magnetic thin films

A microstructural study of DC-sputtered Fe_93−xZr₃B₄Ag_x films on Si(0 0 1) substrates has been carried out using X-ray diffraction (XRD) and transmission electron microscopy (TEM). All samples were deposited as a function of additive Ag content (x=0–6 at%), and annealed in the range of temperature, 300–600°C, for 1 h in order to obtain enhanced soft magnetic properties. Through XRD and TEM investigation, Ag-free Fe₉₃Zr₃B₄ films on Si(0 0 1) substrates consisted of nano-crystalline Fe-based phases. In the presence of Ag additive element, the microstructure of as-deposited Fe_93−xZr₃B₄Ag_x films consisted of a mixture of majority of Fe-based amorphous and Ag crystalline phases. In this case, additive element, Ag played a role in retarding the formation of Fe-based crystalline phases during deposition, and insoluble nano-crystalline Ag particles were dispersed in the Fe-based amorphous matrix. As the content of Ag increased, the intensity of Ag crystalline XRD peak increased. Crystallization of Fe-based amorphous phase in the matrix of Fe₈₈Zr₃B₄Ag₅ thin films occurred at an annealing temperature of 400°C. In the case of Fe₈₈Zr₃B₄Ag₅ films annealed at 500°C, a much enhanced permeability of the Fe-based alloy thin films associated with nano-crystalline phases was achieved.     

Epitaxial ZnO thin films grown by pulsed electron beam deposition

In this work, the pulsed electron beam deposition method (PED) is evaluated by studying the properties of ZnO thin films grown on c-cut sapphire substrates. The film composition, structure and surface morphology were investigated by means of Rutherford backscattering spectrometry, X-ray diffraction and atomic force microscopy. Optical absorption, resistivity and Hall effect measurements were performed in order to obtain the optical and electronic properties of the ZnO films. By a fine tuning of the deposition conditions, smooth, dense, stoichiometric and textured hexagonal ZnO films were epitaxially grown on (0001) sapphire at 700 °C with a 30° rotation of the ZnO basal plane with respect to the sapphire substrate. The average transmittance of the films reaches 90% in the visible range with an optical band gap of 3.28 eV. Electrical characterization reveals a high density of charge carrier of 3.4 × 10¹⁹ cm^?3 along with a mobility of 11.53 cm²/Vs. The electrical and optical properties are discussed and compared to ZnO thin films prepared by the similar and most well-known pulsed laser deposition method.     

The microstructures and electrical properties of Y-doped amorphous vanadium oxide thin films

One of promising approaches for further improving the sensitivity of microbolometer arrays with greatly-reduced pixel size is using the thermal-sensitive materials with higher performance. In this paper, Y-doped vanadium oxide (VO_x) thin films prepared by a reactively sputtering process exhibit enhanced performance for the microbolometer application compared with frequently-applied VO_x thin films. Both undoped and Y-doped VO_x thin films are amorphous due to the relatively low deposition temperature. Y-doped VO_x thin films exhibit smoother surface morphology than VO_x due to the restrained expansion of particles during depositions. Y-doping increases the temperature coefficient of resistivity by over 20% for the doping level of 1.30 at%. The change rate of resistivity, after aging for 72 h, of thin films was reduced from about 15% for undoped VO_x to 2% due to the introduction of Y. Moreover, Y-doped VO_x thin films have a low 1/f noise level as VO_x ones. Y-doping provides an attractive approach for preparing VO_x thermal-sensitive materials with enhanced performance for microbolometers.     

Optical properties and structural characteristics of ZnO thin films grown on a-plane sapphire substrates by plasma-assisted molecular beam epitaxy

We investigated structural and optical properties of ZnO thin films grown on (112?0) a-plane sapphire substrates using plasma-assisted molecular beam epitaxy. Negligible biaxial stress in ZnO thin films is due to the use of (112?0) a-plane sapphire substrates and slow substrate cooling. The 14 K photoluminescence spectrum shows a blueshift of energy positions compared with ZnO single crystal. A donor with binding energy of 43 meV and an acceptor with binding energy of ～170 meV are identified by well-resolved photoluminescence spectra. A characteristic emission band at 3.320 eV (so-called A-line) is studied. Based on analysis from photoluminescence spectra, the origin of the A-line, it seems, is more likely an (e, A°) transition, in which defect behaves as an acceptor. The room-temperature photoluminescence is dominated by the FX at 3.307 eV, which is an indication of strongly reduced defect density in ZnO thin films.     

High c-axis preferred orientation ZnO thin films prepared by oxidation of metallic zinc

Thin films of zinc oxide were grown on glass substrates by thermal oxidation. The metallic zinc films were thermally oxidized at different temperatures ranging from 300 to 600 °C to yield ZnO thin films. The structural property of the thin films was characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The X-ray diffraction measurements showed that the films oxidized at 300 °C were not oxidized entirely, and the films deposited at 600 °C had better crystalline quality than the rest. When the oxidation temperature increased above 400 °C, the films exhibited preferred orientation along (002) and high transmittance ranging from 85% to 98% in vis–near-infrared band. Meanwhile, the films showed a UV emission at about 377 nm and green emission. With the increasing of oxidation temperature, the intensity of green emission peak was enhanced, and then decreased, disappearing at 600 °C, and the case of UV emission increased. Furthermore, a strong green emission was observed in the film sintered in pure oxygen atmosphere.     

Modifications in physical,optical and electrical properties of tin oxide by swift heavy Au8+ ion bombardment

Tin oxide thin films were deposited by a novel technique called as modified-SILAR. The preparative parameters were optimized to obtain good quality thin films. As-deposited films were annealed in O₂ atmosphere for 1 h at 500 °C. The annealed films were irradiated using Au⁸⁺ ions with energy of 100 MeV at different fluencies of 1 × 10¹¹, 1 × 10¹², 5 × 10¹² and 1 × 10¹³ ions/cm² using tandem pelletron accelerator. The irradiation-induced modifications in tin oxide thin films were studied using XRD, AFM, optical band gap, photoluminescence and I–V measurements. XRD studies showed formation of tin oxide with tetragonal structure. AFM revealed uniform deposition of the material with increase in grain size after irradiation. Decrease in band gap from 3.51 eV to 2.82 eV was seen with increases in fluency. A decrease in PL intensity, and an additional peak was observed after irradiation. I–V measurements showed a decrease in resistance with fluency.     

Microstructural properties of plasma-enhanced chemical vapor deposited WNx films using WF6–H2–N2 precursor system

A WF₆–H₂–N₂ precursor system was used for plasma-enhanced chemical vapor deposition (PECVD) of WN_x films. We examined the microstructural changes of the WN_x films depending on N₂/H₂ flow-rate ratio and post-annealing (600–800 °C for 1 h). As the N₂/H₂ flow rate was increased from 0 to 1.5, as-deposited WN_x films exhibited various different crystalline states, such as nanocrystalline and/or amorphous structure comprising W, WN, and W₂N phases, a fine W₂N granular structure embedded in an amorphous matrix, and a crystalline structure of β-W₂N phase. After post-annealing above 600 °C, crystalline recovery with phase separation to β-W₂N and α-W was observed from the WN_x films deposited at an optimized deposition condition (flow-rate ratio = 0.25). From this PECVD method, an excellent step coverage of ∼90% was obtained from the WN_x films at a contact diameter of 0.4 μm and an aspect ratio of 3.5.     

Oxidation of ultra-thin zinc films on Rh(100) surface

The oxidation of submonolayer zinc films on Rh(100) surface by O₂ gas has been studied using low-energy electron diffraction (LEED), Auger electron spectroscopy (AES), and scanning tunneling microscopy (STM). With a zinc coverage of 0.8 ML, an atomically flat ultra-thin zinc oxide film formed at an oxygen partial pressure of 2 × 10^? 8 mbar and a temperature of 150 °C. The zinc oxide film showed a c(16 × 2) LEED pattern. The high resolution STM image of the zinc oxide film showed single dotted spots and double dotted spots arranged linearly and periodically along the [01¯1] direction. We propose an atomic arrangement model of the film accounting for the LEED pattern, the STM image, and the atomic arrangement of the bulk ZnO(0001) surface.     

Low-temperature synthesis of Zn2SiO4:Mn green photoluminescence phosphor

Zn₂SiO₄:Mn green phosphor having comparable photoluminescence (PL) efficiency with commercial phosphor has been synthesized at 1000 °C using solid state reactions involving ZnO, silicic acid and manganese acetate. The water of crystallization attached to SiO₂ in silicic acid whose dissociation at 1000 °C seem to promote the sintering efficiency of Zn₂SiO₄:Mn. Incremental ZnO addition and re-firing at 1000 °C promote the diffusion rate of ZnO and SiO₂. The formation of a single crystalline phase of willemite structure in the samples was confirmed by powder XRD measurements. The phosphor exhibit an intense excitation band centered around 275 nm and a relatively weak excitation centered around 380 nm while the broad band green emission peaks at 524 nm. Other parameters studied include PL spectra, grain morphology, ZnO/SiO₂ molar ratio, Mn concentration, co-dopant/flux and the effect of chemical forms of Mn dopant as well as silica on the PL efficiency.