共查询到20条相似文献,搜索用时 187 毫秒
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采用化学气相沉积(CVD)技术,以高温高压(HTHP)合成的(100)金刚石和p型(100)Si为衬底制备了硫掺杂和硼-硫共掺杂金刚石薄膜,利用原子力显微镜(AFM)、扫描隧道显微镜(STM)及隧道电流谱(CITS)等手段分析同质和异质外延CVD掺杂金刚石薄膜的结构和性能.结果表明:异Si衬底上CVD金刚石的形核密度低,薄膜表面比较粗糙,粗糙度达到18.5nm;同质HTHP金刚石衬底上CVD金刚石薄膜晶粒尺寸约为10—50nm,表面平整,表面粗糙度为1.8nm.拉曼测试和电阻测量的结果显示,在HTHP金刚
关键词:
金刚石
掺杂
外延 相似文献
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CVD金刚石膜中1145cm~(-1)拉曼峰的研究 总被引:5,自引:1,他引:4
用拉曼光谱手段对CVD方法生长的金刚石膜,特别是其中最有争议的1145cm-1附近的拉曼峰进行了研究。用不同波长激光激发得到此峰的拉曼谱与量子尺寸选择效应所预期规律的相反,反驳了将1145cm-1附近的拉曼峰指认为纳米晶金刚石本征峰的说法。而通过对不同样品的比较,从侧面支持了将它归结为杂质,即反式聚乙炔的指认。更进一步通过分析不同尺寸的样品中杂质峰的相对强度,提出了这个峰的强度或许可以作为金刚石晶粒尺寸判据的建议。 相似文献
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Microcrystalline boron-doped diamond (BDD) films are synthesized on the silicon substrate by the hot-filament chemical vapor deposition method under the gas mixture of hydrogen and methane in the presence of boron carbide (B4C) placed in front of filaments. The observed results of scanning electron microscopy, Raman spectroscopy and X-ray diffraction show the morphologies. Microstructures for various deposition pressures of as-grown diamond films are found to be dependent on the change of deposition pressure. These results reveal that with the increase of deposition pressure, resistivity decreases and increase in the grain size is noted in the presence of B4C. Resistivity shows a sudden fall of about three orders of magnitude by the addition of boron in the diamond films. This is due to the crystal integrity induced by B-atoms in the structure of diamond in the presence of B4C. These results are also significant for the conventional applications of BDD materials. The effects of deposition pressure on the overall films morphology and the doping level dependence of the diamond films have also been discussed. 相似文献
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本文采用在金刚石表面蒸镀铝电极的方法测量金刚石膜的电阻率。样品的Raman,SEM,XRD分析结果表明,金刚石膜的电阻率与晶粒尺寸、晶粒取向和缺陷及杂质有直接关系,大尺度晶粒的金刚石膜具有较高的电阻率,高比例的I(110)/I(111)晶粒取向的金刚石膜具有较高的电阻率;结构缺陷和杂质含量较小的金刚石膜具有较高的电阻率。 相似文献
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A.R. Sobia S. AdnanA. Mukhtiar A.A. KhurramA.A. Turab A. AwaisA. Naveed Q.J. FaisalH. Javaid G.J. Yu 《Current Applied Physics》2012,12(3):712-717
The effect of nitrogen addition in the feed gas on the finally incorporated amount of hydrogen in the diamond nanorods (DNRs) thin films has been investigated. The Raman spectroscopy measurements helped to understand the structural and quality changes with increasing nitrogen gas flow rate during CVD deposition. The hydrogen concentration was measured with 3.0 MeV He2+ beam using elastic recoil detection analysis technique and it was found that with the addition of nitrogen, the hydrogen concentration was increased. The results of non-Rutherford backscattering spectroscopy (NRBS) used to measure the amount of nitrogen in the DNRs thin films have shown that the incorporated nitrogen is below the detection limit of NRBS technique. Our results suggested that the addition of nitrogen has affected the overall quality of diamond films in two ways; increasing the thickness of diamond films by increasing the non-diamond carbon content and increasing the hydrogen impurity incorporation. The role of nitrogen additive on diamond growth and hydrogen incorporation is discussed. 相似文献
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Effect of nanostructured AlN coatings on the oxidation-resistant properties of optical diamond films
Diamond film is an ultra-durable optical material with high thermal conductivity and good transmission in near-infrared and far-IR (8-14 μm) wavebands. CVD diamond is subjected to oxidation at temperature higher than 780 °C bared in air for 3 min, while it can be protected from oxidation for extended exposure in air at temperature up to 900 °C by a coating of aluminum nitride. Highly oriented AlN coatings were prepared for infrared windows on diamond films by reactive sputtering method and the average surface roughness (Ra) of the coatings was about 10 nm. The deposited films were characterized by X-ray diffraction (XRD) and atom force microscope (AFM). XRD confirmed the preferential orientation nature and AFM showed nanostructures. Optical properties of diamond films coated AlN thin film was investigated using infrared spectrum (IR) compared with that for as-grown diamond films. 相似文献
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在不同实验条件下,用微波等离子体化学气相沉积(MPCVD)技术在Si基体上制备了S掺杂和B-S共掺杂CVD金刚石薄膜,利用X射线衍射仪和拉曼光谱仪研究掺杂对CVD金刚石薄膜的应力影响.研究结果发现,随着S掺杂浓度的增加,薄膜中sp2杂化碳含量和缺陷增多,CVD金刚石薄膜压应力增加;小尺寸的B原子与大尺寸的S原子共掺杂时,微量B的加入改变了CVD金刚石薄膜的应力状态,共掺杂形成B-S复合体进入金刚石晶体后降低金刚石晶体的晶格畸变程度,减少S原子在晶界上偏聚数量和晶体中非金刚石结构相含量,降低由于杂质、缺陷及sp2杂化碳含量产生的晶格畸变和薄膜压应力,提高晶格完整性.
关键词:
金刚石薄膜
掺杂
应力 相似文献
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Nanocrystalline diamond (NCD) films were grown on silicon substrates by hot filament chemical vapor deposition in Ar/N2/CH4 gas mixtures. The effects of seeding process prior to deposition, the total gas pressure, and concentration of nitrogen on the grain size, morphology and bonding nature in HFCVD technique were investigated. The results indicated that a low total gas pressure is favorable for nanosized diamond crystallites. Films micrograph obtained from scanning electron microscopy showed diamond nanograins elongated with the addition of nitrogen in the plasma. Crystal structure investigations were carried out by X-ray diffraction measurements for deposited films. An increase in the size of crystallite is also observed from XRD measurements in NCD film when nitrogen was added in plasma. From Raman spectra, it was observed that the relative intensity of G peak increases indicating more graphite content after nitrogen added in the plasma. The effects of the nitrogen incorporation in nanocrystalline films in HFCVD are discussed. 相似文献
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A tungsten-carbide gradient coating (WCGC) was prepared by reactive sputtering as an intermediate layer on the cemented carbide, WC-13 wt.% Co, substrate to improve the nucleation, smoothness and adhesion of diamond film. The diamond film was deposited by hot filament chemical vapor deposition (HFCVD). The effects of the substrate temperature on the WCGC and the diamond film were investigated. The characterization of the WCGC and the diamond films was analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), micro-Raman spectroscopy and Rockwell hardness indentation. It is found that the WCGC plays an important role in improving the nucleation, smoothness and adhesion of diamond film; and the diamond films exhibit better quality and adhesion as substrate temperature increases during the CVD processes. 相似文献
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QIU Hong FAN Zhengxiu 《Chinese Journal of Lasers》1998,7(1):73-78
LaserInducedDamageinCVDDiamondFilmsQIUHongFANZhengxiu(ShanghaiInstituteofOpticsandFineMechanics,ChineseAcademyofSciences,P.O.... 相似文献
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利用Nd:YAG型金刚石精密激光切割机,采用激光轴向偏焦法对化学气相沉积(CVD)法制备的金刚石膜表面进行扫描式平整化处理,利用扫描电子显微镜(SEM)、粗糙度仪和金相显微镜对平整化后的金刚石表面进行表征,研究了激光充电电压和焦点位置对扫描凹槽宽度和深度的影响,以及扫描间距对平整化效果的影响。研究结果表明:扫描凹槽宽度随激光充电电压的升高而增大;凹槽深度随激光充电电压的升高而增大,随偏焦量的增大而增大。激光轴向偏焦法对CVD金刚石膜进行平整化处理后,其粗糙度显著减小,利用氢等离子体对其表面进行刻蚀处理,能够有效去除表层石墨,从而达到理想的平整化效果。 相似文献