离子液体电沉积CuIn_xGa_(1-x)Se_2薄膜(英文)

采用循环伏安法(CV)对离子液体Reline中三元CuCl2+InCl3+SeCl4体系和四元CuCl2+InCl3+GaCl3+SeCl4体系的电化学行为进行了研究。研究表明,In3+并入三元CIS(Cu-In-Se)薄膜体系和Ga3+并入四元CIGS(Cu-In-Ga-Se)薄膜体系均有两种途径:一是发生共沉积,二是直接还原。利用电感耦合等离子体发射光谱(ICP)和扫描电镜(SEM)对沉积电势、镀液温度和主盐浓度对CIGS薄膜组成、镀层表面形貌的影响进行了测试,结果表明通过工艺参数的选择可以控制Ga/(Ga+In)和CIGS薄膜组成并得到化学计量比为Cu1.00In0.78Ga0.27Se2.13的薄膜。     

SILAR法制备化学计量CuInS2薄膜

在室温下，以不同c_Cu/c_In的CuCl₂和InCl₃混合溶液作为阳离子前驱体，Na₂S水溶液为硫源，利用连续离子层吸附反应法(SILAR)在玻璃基底上制备了CuInS₂薄膜。XRD结果表明，当c_Cu²⁺/c_In³⁺在1～1.5范围内均可形成具有黄铜矿结构的CuInS₂薄膜。SEM观察到随c_Cu²⁺/c_In³⁺的升高，薄膜表面颗粒长大并出现团簇聚集。通过XPS测定薄膜表面的化学组成证明当c_Cu²⁺/c_In³⁺=1.25时，CuInS₂薄膜接近其标准的化学计量组成。此时薄膜的吸收系数大于>10⁴ cm^-1，禁带宽度E_g为1.45 eV。     

Ga和Cu/In衬底上电沉积金属Ga

在酸性水溶液中,分别在金属Ga和Cu/In衬底上进行了Ga电沉积的研究。用循环伏安法研究了导电盐、pH值对电沉积Ga的影响。系统研究了Ga的沉积过程,发现Ga会逐渐向薄膜内部扩散,在Cu/In界面上与CuIn合金反应生成CuGa₂合金。针对Cu/In薄膜和Ga薄膜是活泼金属的特点,在溶液中加入三乙醇胺有效地保护了Cu/In薄膜和Ga金属薄膜不被氧化,并且提高了Ga沉积的电流效率。在Cu/In薄膜上制备出了均匀光亮的金属Ga薄膜。对电沉积出Cu-In-Ga预置层进行了硒化处理,得到了质量较好的Cu(In_1-xGa_x)Se₂(CIGS)薄膜,并制备了太阳电池。电池效率达到了9.42%。     

n型Bi2Te3-ySey温差电材料薄膜的电化学制备及表征

采用电化学控电位的方法在不锈钢基片上电沉积制备了Bi₂Te_3-ySe_y温差电材料薄膜。研究了电沉积溶液中硒含量与薄膜中硒含量的关系，考察了不同沉积电位对电沉积Bi₂Te_3-ySe_y薄膜的温差电性能的影响，并采用ESEM、EDS、XRD等方法对电沉积薄膜的形貌、成分及结构进行了分析。结果表明，在含有Bi³⁺、HTeO₂⁺和Se⁴⁺的电沉积溶液中，采用电化学沉积的方法，可实现铋、碲、硒三元共沉积，生成Bi₂Te_3-ySe_y半导体化合物。改变电沉积溶液组成，可控制Bi₂Te_3-ySe_y化合物中硒的掺杂浓度。-0.04 V沉积电位下制备的Bi₂Te_3-ySe_y薄膜较平整、致密，组成为Bi₂Te_2.7Se_0.3。退火处理可提高电沉积Bi₂Te_3-ySe_y薄膜的塞贝克系数，且控制沉积电位为-0.04 V下制备的Bi₂Te_3-ySe_y薄膜退火后的塞贝克系数为-123 μV·K^-1。     

ZnAl2O4∶Mn4+材料的制备及发光性能

以共沉淀法与煅烧法联用,成功制备了一系列ZnAl₂O₄∶xMn⁴⁺样品。通过扫描电镜和X射线粉末衍射测试研究了样品的形貌和物相特征,结果表明尖晶石结构的ZnAl₂O₄中[AlO₆]的八面体位可以有效被Mn⁴⁺替代。通过荧光激发和发射光谱研究了样品的发光性能,发现Mn⁴⁺在ZnAl₂O₄体系中掺杂可以显示出明亮的红色发光(发射峰值位于680 nm处)。比较不同Mn⁴⁺浓度(Mn与Al的物质的量之比)掺杂样品的发光强度时发现,Mn⁴⁺最佳掺杂浓度为0.06%。通过德克斯特公式分析了发光强度与浓度关系,探究浓度猝灭机制,结果表明最邻近离子之间能量传递造成Mn⁴⁺浓度猝灭的发生。为了提高Mn⁴⁺的发光强度,选择了7种金属离子(Li⁺、Na⁺、K⁺、Ca²⁺、Sr²⁺、Sn²⁺和Ga³⁺)与Mn⁴⁺共掺杂进入ZnAl₂O₄基质中,其中效果较突出的为Li⁺和Ga³⁺,其共掺杂使Mn⁴⁺发光强度分别增强0.6倍和1倍。     

ZnAl2O4∶Mn4+材料的制备及发光性能

以共沉淀法与煅烧法联用,成功制备了一系列ZnAl₂O₄∶xMn⁴⁺样品。通过扫描电镜和X射线粉末衍射测试研究了样品的形貌和物相特征,结果表明尖晶石结构的ZnAl₂O₄中[AlO₆]的八面体位可以有效被Mn⁴⁺替代。通过荧光激发和发射光谱研究了样品的发光性能,发现Mn⁴⁺在ZnAl₂O₄体系中掺杂可以显示出明亮的红色发光(发射峰值位于680 nm处)。比较不同Mn⁴⁺浓度(Mn与Al的物质的量之比)掺杂样品的发光强度时发现,Mn⁴⁺最佳掺杂浓度为0.06%。通过德克斯特公式分析了发光强度与浓度关系,探究浓度猝灭机制,结果表明最邻近离子之间能量传递造成Mn⁴⁺浓度猝灭的发生。为了提高Mn⁴⁺的发光强度,选择了7种金属离子(Li⁺、Na⁺、K⁺、Ca²⁺、Sr²⁺、Sn²⁺和Ga³⁺)与Mn⁴⁺共掺杂进入ZnAl₂O₄基质中,其中效果较突出的为Li⁺和Ga³⁺,其共掺杂使Mn⁴⁺发光强度分别增强0.6倍和1倍。     

稀散金属铟的离子液体EMIInCl4的热化学性质研究

在充满干燥氩气的手套箱中用直接混合等物质的量的EMIC(氯化1-甲基-3-乙基咪唑)和高纯无水InCl₃的方法, 制备了含稀散金属铟的离子液体EMIInCl₄. 在298.15 K下, 利用自行组装的具有恒温环境的溶解反应热量计, 测定了离子液体EMIInCl₄和EMIC在水中的反应溶解热, 并将这些实验数据按Pitzer方程作拟合, 分别得到了EMIInCl₄和EMIC的无限稀释摩尔溶解热Δ_sH_m⁰和Pitzer溶解焓参数. 根据溶解热和水化热数据, 估算了InCl₄^－(g)解离成In^3＋(g)和4Cl^－(g)的解离热, 还估算了反应: EMIC＋InCl₃→EMIInCl₄的摩尔反应热Δ_rH_m＝(－60.37±1.8) kJ•mol^－1. 在合成离子液体EMIInCl ₄中也观察到了放热现象, 这表明在合成过程中生成了InCl₄^－.     

K+掺杂双钙钛矿Cs2AgInCl6的发光性质

采用固相球磨法制备了K⁺掺杂双钙钛矿Cs₂AgInCl₆纳米材料,该方法无需配体辅助,绿色环保。通过X射线衍射谱和拉曼光谱对晶体结构进行研究,通过激发光谱、发射光谱和时间分辨光谱对其发光性能进行研究。结果表明,Cs₂AgInCl₆为立方晶体,属于Fm3m空间群,由于宇称禁戒跃迁,其荧光量子产率(PLQY)低,小于0.1%。低于60%的K⁺掺杂主要取代Ag⁺的位置,引起Cs₂AgInCl₆的晶格膨胀,消除了晶格结构的反演对称性,打破了宇称禁戒跃迁,掺杂后Cs₂AgInCl₆的光致发光强度显著增强。K⁺的最佳掺杂比例为40%,Cs₂Ag_0.6K_0.4InCl₆发出中心波长为640 nm,半高宽为180 nm,平均荧光寿命达到29.2 ns,PLQY达到10.5%。当K⁺掺杂比例超过60%,K⁺开始取代Cs⁺的位置,产物发生相变,出现立方相的Cs_2-xK_1+x-yAg_yInCl₆和单斜相的Cs_2-xK_1+xInCl₆产物,这些产物由于强电子-声子耦合,非辐射复合占据主导地位。     

Ti3+自掺杂的TiO2(A)/TiO2(R)/In2O3纳米异质结的制备与可见光催化性能

以TiCl₃和InCl₃为Ti源和In源,在不使用还原剂的条件下,首先通过液相沉淀反应制备前驱体沉淀,然后采用后续水热处理制备Ti³⁺自掺杂的TiO₂(A)/TiO₂(R)/In₂O₃纳米异质结,考察了水热处理温度对材料结构和性能的影响。利用X射线衍射、透射电子显微镜、X射线光电子能谱和紫外-可见漫反射光谱对样品进行表征。分别以罗丹明B和苯酚溶液为模拟废水评价了样品的可见光催化降解性能。结果表明,与纯的TiO₂、In₂O₃以及Ti³⁺自掺杂的TiO₂相比,Ti³⁺自掺杂的TiO₂(A)/TiO₂(R)/In₂O₃纳米异质结在可见光区有明显的吸收,并具有良好的可见光催化降解性能,200℃下水热处理24 h所得样品光催化降解罗丹明B的反应速率常数(0.0444 min^-1)分别是纯TiO₂和In₂O₃的17.76倍和8.71倍。瞬态光电流时间响应结果表明样品的光催化性能主要来源于TiO₂(A)/TiO₂(R)/In₂O₃纳米异质结导致的提高的光生电子和空穴分离效率。     

CaWO4:xEu3+,ySm3+,zLi+红色荧光粉的制备及光学性能

采用微波固相法制备了CaWO₄：xEu³⁺,ySm³⁺,zLi⁺红色荧光粉。测量样品的XRD图、激发谱、发射谱及发光衰减曲线,研究并分析了Eu³⁺、Sm³⁺、Li⁺的掺杂浓度,对样品微结构、光致发光特性、能量传递及能级寿命的影响。结果表明,Eu³⁺、Sm³⁺、Li⁺掺杂并未引起合成粉体改变晶相,仍为CaWO₄单一四方晶系结构。Eu³⁺、Sm³⁺共掺样品中,Sm³⁺掺杂为3%时,Sm³⁺对Eu³⁺的能量传递最有效。Li⁺掺杂起到了助熔剂和敏化剂的作用,使样品发光更强。在394 nm激发下,与CaWO₄：3%Eu³⁺样品比较,3%Eu³⁺、3%Sm³⁺共掺CaWO₄及3%Eu³⁺、3%Sm³⁺、1%Li⁺共掺CaWO₄样品的发光分别增强2倍及2.4倍。同一激发波长下,单掺Eu³⁺样品寿命最短,Sm³⁺、Eu³⁺共掺样品随Sm³⁺浓度增加,寿命先减小后增加,且掺杂了Li⁺的样品比不掺Li⁺的样品⁵D₀能级寿命有所增加。     

Structural investigation of the Cu2Se-In2Se3-Ga2Se3 phase diagram, X-ray photoemission and optical properties of the Cu1−z(In0.5Ga0.5)1+z/3Se2 compounds

Structures of compounds in the Cu₂Se-In₂Se₃-Ga₂Se₃ system have been investigated through X-ray diffraction. Single crystal structure studies for the so-called stoichiometric compounds Cu(In,Ga)Se₂ (CIGSe) confirm that the chalcopyrite structure (space group I4¯2d) is very flexible and can adapt itself to the substitution of Ga for In. On the other hand a structure modification is evidenced in the Cu_1−z(In_0.5Ga_0.5)_1+z/3Se₂ series when the copper vacancy ratio (z) increases; the chalcopyrite structure turns to a modified-stannite structure (I4¯2m) when z≥0.26. There is a continuous evolution of the structure from Cu_0.74(In_0.5Ga_0.5)_1.09Se₂ to Cu_0.25(In_0.5Ga_0.5)_1.25Se₂ ((i.e. Cu(In_0.5Ga_0.5)₅Se₈), including Cu_0.4(In_0.5Ga_0.5)_1.2Se₂ (i.e. Cu(In_0.5Ga_0.5)₃Se₅). From this single crystal structural investigation, it is definitively clear that no ordered vacancy compound exists in that series. X-ray photoemission spectroscopy study shows for the first time that the surface of powdered Cu_1−z(In_0.5Ga_0.5)_1+z/3Se₂ compounds (z≠0) is more copper-poor than the bulk. The same result has often been observed on CIGSe thin films material for photovoltaic applications. In addition, optical band gaps of these non-stoichiometric compounds increase from 1.2 to 1.4 eV when z varies from 0 to 0.75.     

A crystallographic description of experimentally identified formation reactions of Cu(In,Ga)Se2

This work describes solid-state reactions for the formation of the chalcopyrite compounds CuInSe₂, CuGaSe₂ and Cu(In,Ga)Se₂ on atomic scale. The most important chalcopyrite formation reactions which were identified by the authors by real-time in situ X-ray diffraction in preceding experiments are (A) CuSe+InSe→CuInSe₂, (B) Cu₂Se+2 InSe+Se→2 CuInSe₂ and (C) Cu₂Se+In₂Se₃→2 CuInSe₂. During the selenistaion of a metallic precursor containing gallium a separate fourth reaction occurs: (D) Cu₂Se+Ga₂Se₃→2 CuGaSe₂. The quaternary compound is finally formed by interdiffusion of CuInSe₂ with CuGaSe₂ (E). These five reactions differ in their activation energy and reaction speed. We explain these differences qualitatively by analysing the involved crystal structures for each reaction. It turns out that all reactions involved in the formation of Cu(In,Ga)Se₂ are promoted by epitaxial relations, which facilitates the formation of polycrystalline thin films at temperatures much below those necessary for single crystal growth. Recommendations for the growth of larger grains of Cu(In,Ga)Se₂ containing fewer defects are given.     

Application of ICP-OES to the determination of CuIn<Subscript>1−x</Subscript>Ga<Subscript>x</Subscript>Se<Subscript>2</Subscript> thin films used as absorber materials in solar cell devices

CuIn_1–xGa_xSe₂ [CIGS; x=Ga/(In+Ga)] thin films are among of the best candidates as absorber materials for solar cell applications. The material quality and main properties of the polycrystalline absorber layer are critically influenced by deviations in the stoichiometry, particularly in the Cu/(In+Ga) atomic ratio. In this work a simple, sensitive and accurate method has been developed for the quantitative determination of these thin films by inductively coupled plasma optical emission spectrometry (ICP-OES). The proposed method involves an acid digestion of the samples to achieve the complete solubilization of CIGS, followed by the analytical determination by ICP-OES. A digestion procedure with 50% HNO₃ alone or in the presence of 10% HCl was performed to dissolve those thin films deposited on glass or Mo-coated glass substrates, respectively. Two analytical lines were selected for each element (Cu 324.754 and 327.396 nm, Ga 294.364 and 417.206 nm, In 303.936 and 325.609 nm, Se 196.090 and 203.985 nm, and Mo 202.030 and 379.825 nm) and a study of spectral interferences was performed which showed them to be suitable, since they offered a high sensitivity and no significant inter-element interferences were detected. Detection limits for all elements at the selected lines were found to be appropriate for this kind of application, and the relative standard deviations were lower than 1.5% for all elements with the exception of Se (about 5%). The Cu/(In+Ga) atomic ratios obtained from the application of this method to CIGS thin films were consistent with the study of the structural and morphological properties by X-ray diffraction (XRD) and scanning electron microscopy (SEM).     

不同形貌InxGa1-xN纳米材料的制备及发光性能研究

采用常压化学气相沉积法(APCVD),分别以金属镓(Ga),铟(In)和氨气(NH3)为镓源,铟源和氮源,在Si衬底上利用催化剂Au成功合成了不同形貌的InxGa1-xN纳米材料。利用X射线衍射仪(XRD)、扫描电子显微镜(SEM),X射线光电子能谱(XPS)和光致发光谱(PL)对比研究了InxGa1-xN(x=0,0.25)纳米材料在形貌,化学成分,晶体结构以及发光特性的变化。分析结果表明:当没有催化剂时,所生成的InxGa1-xN样品形貌由片状结构自组装成花状结构,而在催化剂Au的作用下,生成的InxGa1-xN纳米晶的形貌变为以纳米线为轴在其上生长的片状的"塔"状结构;虽然在催化剂Au的作用下生成的InxGa1-xN(x=0.25)形貌发生了很大变化,但晶体结构未发生改变,均为六方纤锌矿结构;PL分析结果显示InxGa1-xN纳米结构的发光性能随着In含量的增加,发光谱的强度增加且同时出现了蓝光区,在催化剂Au的作用下生成的InxGa1-xN的发光强度最强。最后对不同形貌InxGa1-xN其生长机理做简单分析。     

Metal Precursor Influence on Performance of CuIn1-xGaxSe2 Films

CuIn_1-xGa_xSe₂ (CIGS) films were prepared by a two-stage method, in which Cu-In-Ga metallic precursors were firstly deposited on unheated Mo-coated soda lime glass substrates by direct current sputtering CuGa (20%Ga) and radio frequency sputtering In targets inan Ar atmosphere, followed by selenization at 520 oC for 40 min in Se vapor. By adjust-ing the sputtering thickness ratio of surface CuGa (20%Ga) and bottom CuGa (20%Ga) alloy layers in metal precursor, different CIGS thin films were fabricated. Through X-ray diffraction spectra, Raman spectra, local energy dispersive spectrometer, planar- and cross-sectional views of scanning electron microscopy measurements, it revealed that the CIGS thin films from selenization of metal precursor with CuGa:In:CuGa thickness ratio of 7:20:3 (sample-2-se) was of chalcopyrite structure with the preferred (112) orientation, and the grains sizes ranged from 0.5 μm to 2 μm, and sample-2-se had no binary compound phase of In-Se and order defect compound phase. Consequently, the results of illuminated current-voltage curve and quantum efficiency measurements showed that the CIGS film device made from sample-2-se had relative higher photo-electric conversion efficiency (3.59%) and good spectrum response.     

Preparation of Ga<Subscript>2</Subscript>Se<Subscript>3</Subscript> thin films by sol–gel technique

In this study we describe the preparation of Ga₂Se₃ semiconductor compound thin films by sol–gel method for different crystal formation temperatures. The films were characterized by X-ray diffraction analyses (XRD), UV–visible spectrometer, and scanning electron microscope (SEM). The XRD spectrum showed that the formation of Ga₂Se₃ crystals were between 743 and 823 K. The thin film crystals that were formed at 773 K corresponded to the β phase and the preferred crystal structure was monoclinic. The value of band gap from optical absorption spectra for the Ga₂Se₃ thin films was estimated to be about E _g ~ 2.56 eV. The thickness of the one-coat Ga₂Se₃ thin films, which was measured by a Spectroscopic Ellipsometer, was about ~200 nm. The average grain sizes of scattered particles were within the limits between 200 and 500 nm.     

Synthesen und Molekülstrukturen von [Cu20Ga10Cl4Se23(PEt2Ph)12] und [Cu14In6Se7(iPrSe)18]

Syntheses and Structures of [Cu₂₀Ga₁₀Cl₄Se₂₃(PEt₂Ph)₁₂] and [Cu₁₄In₆Se₇(iPrSe)₁₈] CuCl and GaCl₃ react with Se(SiMe₃)₂ in thf solution to yield in the presence of PEt₂Ph [Cu₂₀Ga₁₀Cl₄Se₂₃(PEt₂Ph)₁₂] ( 1 ). Reaction of CuCl, InCl₃ and TMEDA with iPrSeSiMe₃ in DME results in the crystallisation of [Cu₁₄In₆Se₇(iPrSe)₁₈] ( 2 ). The structures of 1 and 2 were determined by X‐ray single crystal structure analysis and display two new types of molecular clusters formed by the elements of group 11, 13, and 16. However, both cluster structures show no analogy to the structures of the related bulk phases.     

室温电化学沉积Ba1-xCaxMoO4多晶固溶体薄膜

近年发展起来的制备功能薄膜的电化学沉积技术,是软溶液工艺路线(Soft Solution Processing简记为SSP)中的重要技术[1]。与传统的薄膜制备技术相比,电化学沉积技术在反应控制、形貌控制、沉积速度、能量消耗、环境影响、薄膜晶化以及沉积设备等方面都有较明显的优势,同时避免了     

[Ga(en)3][Ga3Se7(en)] · H2O: Ein Galliumchalkogenid mit Ketten aus [Ga3Se6Se2/2(en)]3–-Bicyclen

[Ga(en)₃][Ga₃Se₇(en)] · H₂O: A Gallium Chalcogenide with Chains of [Ga₃Se₆Se_2/2(en)]^3– Bicycles The new selenidogallate [Ga(en)₃][Ga₃Se₇(en)] · H₂O ( I ) was produced from a ethylendiamine suspension of Ga and Se at 130 °C. I crystallizes in the orthorhombic space group Pna2₁ with unit constants a = 1347.9(3) pm, b = 961.6(1) pm, c = 1967.6(4) pm and Z = 4. The crystal structure contains an anion so far not observed in gallium chalcogenides. It is built from [Ga₃Se₆Se_2/2(en)]^3– bicycles of three Ga^IIIL₄ tetrahedra (L = en, Se) connected via selenium corners to linear chains. The cations, Ga^III ions coordinated by three ethylendiamine in a distorted octahedral geometry are positioned in the holes of the hexagonal rod packing of these chains.