SIMS depth profiling of vertical p-channel Si-MOS transistor structures

SIMS depth profiling during O₂ ⁺ bombardment has been performed to analyse epitaxially grown Si p-n-p layers, which define the p-channel region in vertical Si-p MOS transistors, as well as to establish “on-chip” depth profiling of the functional vertical device. The SIMS detection limit of ³¹P in Si, phosphorus used as n-type dopant in the transistor, has been optimised as a function of the residual gas pressure in the SIMS analysis chamber and of the sputter erosion rate. We demonstrate that good vacuum during SIMS analysis combined with high erosion rates allows the simultaneous quantitative SIMS depth profiling of n- and p-type dopant concentrations in the vertical transistor. Small area “on-chip” SIMS depth profiling through the layered structure of Al-contact/TiSi₂/Si(p-n-p)/Si-substrate has been performed. Factors influencing the depth resolution during “on-chip” analysis of the transistor are discussed especially in terms of sputtering induced ripple formation at the erosion crater bottom, which has been imaged with atomic force microscopy. Received: 15 August 1996 / Revised: 17 January 1997 / Accepted: 21 January 1997     

A simple erosion dynamics model of molecular sputter depth profiling

A simple model which describes the essential features commonly observed in a molecular sputter depth profile is presented. General predictions of the dependence of measured molecular ion signals on the primary ion fluence are derived for the specific case where a mass spectrometric technique such as SIMS or secondary neutral mass spectrometry (SNMS) is used to analyze the momentary surface. The results are compared with recent experimental data on molecular depth profiles obtained by cluster‐ion‐initiated SIMS of organic overlayers. Copyright © 2008 John Wiley & Sons, Ltd.     

Simulation of sputter-induced roughness for depth profiling of thin film structures

Sputtering induced surface roughening is the dominant factor that degrades depth resolution in sputter profiling of polycrystalline film samples. Due to the dependence of the sputtering yield on the crystallographic orientation, ion beam incidence angle and composition, the local sputtering rate differs from grain to grain. A simple computer program based on a model of Marton and Fine can simulate such a roughness development within one layer, an improved version can even be applied for interfaces. A further extension of the program using a model of Hauffe includes effects like shadowing and enhanced peak erosion leading to surface smoothing.     

Simulation of sputter-induced roughness for depth profiling of thin film structures

Sputtering induced surface roughening is the dominant factor that degrades depth resolution in sputter profiling of polycrystalline film samples. Due to the dependence of the sputtering yield on the crystallographic orientation, ion beam incidence angle and composition, the local sputtering rate differs from grain to grain. A simple computer program based on a model of Marton and Fine can simulate such a roughness development within one layer, an improved version can even be applied for interfaces. A further extension of the program using a model of Hauffe includes effects like shadowing and enhanced peak erosion leading to surface smoothing.     

Quantitative SIMS depth profiling of diffusion barrier gate-oxynitride structures in TFT-LCDs

Gate oxynitride structures of TFT-LCDs were investigated by SIMS, and successful solutions are demonstrated to overcome difficulties arising due to the charging effects of the multilayer systems, the matrix effect of the method, and the small pattern sizes of the samples. Because of the excellent reproducibility achieved by applying exponential relative sensitivity functions for quantitative analysis, minor differences in the barrier gate-oxynitride composition deposited on molybdenum capped aluminium-neodymium metallisation electrodes were determined between the centre and the edge of the TFT-LCD substrates. No differences were found for molybdenum-tungsten metallisations. Furthermore, at the edge of the glass substrates, aluminium, neodymium, and molybdenum SIMS depth profiles show an exponential trend. With TEM micrographs an inhomogeneous thickness of the molybdenum capping is revealed as the source of this effect, which influences the electrical behaviour of the device.The production process was improved after these results and the aging behaviour of TFT-LCDs was investigated in order to explain the change in control voltage occurring during the lifetime of the displays. SIMS and TEM show an enrichment of neodymium at the interface to the molybdenum layer, confirming good diffusion protection of the molybdenum barrier during accelerated aging. The reason for the shift of the control voltage was finally located by semi-quantitative depth profiling of the sodium diffusion originating from the glass substrate. Molybdenum-tungsten was a much better buffer for the highly-mobile charge carriers than aluminium-neodymium. Best results were achieved with PVD silicon oxynitride as diffusion barrier and gate insulator deposited on aluminium-neodymium metallisation layers.     

TOF-S-SIMS molecular depth profiling of organic bilayers using mechanical wear test methodology

Recent publications on static secondary ion mass spectrometry (S-SIMS) focus on molecular depth profiling by using polyatomic or ultra-low energy monoatomic projectiles. Since their applicability depends on the relationship between the ion yield and the depth, which is hard to obtain without extensive studies, a combination of a wear test method with S-SIMS surface analysis was performed in the current study. Using this non-sputtering procedure, the relation between the signal intensity and the local concentration remains in principle the same as that at the surface (which is easy to determine). Mechanical erosion was successfully applied to expose sub-surface material from organic multilayers. Through surface analysis with S-SIMS on the gradually exposed deeper planes, molecular depth profiles could be obtained. The study was conducted on a model system relevant to offset printing, consisting of two polymer layers, containing dyes and a surfactant, cast on an Al substrate. Figure Concept of mechanical erosion followed by S-SIMS surface analysis to obtain molecular depth profiles     

Quantitative molecular depth profiling of organic delta-layers by C60 ion sputtering and SIMS

Alternating layers of two different organic materials, Irganox1010 and Irganox3114, have been created using vapor deposition. The layers of Irganox3114 were very thin ( approximately 2.5 nm) in comparison to the layers of Irganox1010 ( approximately 55 or approximately 90 nm) to create an organic equivalent of the inorganic 'delta-layers' commonly employed as reference materials in dynamic secondary ion mass spectrometry. Both materials have identical sputtering yields, and we show that organic delta layers may be used to determine some of the important metrological parameters for cluster ion beam depth profiling. We demonstrate, using a C(60) ion source, that the sputtering yield, S, diminishes with ion dose and that the depth resolution also degrades. By comparison with atomic force microscopy data for films of pure Irganox1010, we show that the degradation in depth resolution is caused by the development of topography. Secondary ion intensities are a well-behaved function of sputtering yield and may be employed to obtain useful analytical information. Fragments characteristic of highly damaged material have intensity proportional to S, and those fragments with minimal molecular rearrangment exhibit intensities proportional to S(2). We demonstrate quantitative analysis of the amount of substance in buried layers of a few nanometer thickness with an accuracy of approximately 10%. Organic delta layers are valuable reference materials for comparing the capabilities of different cluster ion sources and experimental arrangements for the depth profiling of organic materials.     

The impact of molecular emission in compositional depth profiling using Glow Discharge-Optical Emission Spectroscopy

The scope of this paper is to investigate and discuss how molecular emission can affect elemental analysis in glow discharge optical emission (GD-OES), particularly in compositional depth profiling (CDP) applications. Older work on molecular emission in glow discharges is briefly reviewed, and the nature of molecular emission spectra described. Work on the influence of hydrogen in the plasma, in particular elevated background due to a continuum spectrum, is discussed. More recent work from sputtering of polymers and other materials with a large content of light elements in a Grimm type source is reviewed, where substantial emission has been observed from several light diatomic molecules (CO, CH, OH, NH, C₂). It is discussed how the elevated backgrounds from such molecular emission can lead to significant analytical errors in the form of “false” depth profile signals of several atomic analytical lines. Results from a recent investigation of molecular emission spectra from mixed gases in a Grimm type glow discharge are presented. An important observation is that dissociation and subsequent recombination processes occur, leading to formation of molecular species not present in the original plasma gas. Experimental work on depth profiling of a polymer coating and a thin silicate film, using a spectrometer equipped with channels for molecular emission lines, is presented. The results confirm that molecular emission gives rise to apparent depth profiles of elements not present in the sample. The possibilities to make adequate corrections for such molecular emission in CDP of organic coatings and very thin films are discussed.     

Studies in neutron depth profiling

This paper describes first the application of neutron depth profiling (NDP) for measuring the distribution of⁶Li in LiAlO₂ ceramics. Using a surface barrier detector for detecting³H produced in⁶Li(n, )³H,⁶Li was profiled to a depth of 14 m in the ceramics. Secondly, a new methodology is presented for NDP with enhanced capabilities based on measuring the energy of recoiling nuclei from (n, p) and (n, ) reactions by time-of-flight mass spectrometry. The scope of recoil nucleus time-of-flight mass spectrometry (RN-TOF-MS) includes profiling of¹⁰B,¹⁴N,¹⁷O,³³S,³⁵Cl,⁴⁰K. Probe depths may be of a few tens nanometers. RN-TOF-MS complements and refines NDP based on charged particle (p or ) spectrometry.     

Analytical applications of neutron depth profiling

Using a low-energy neutron beam as an isotopic probe, neutron depth profiling (NDP) provides quantitative depth profiles in nearly all solid matrix materials. Several of the light elements, such as He, Li, B, and N can be nondestructively analyzed by NDP. The information obtained using NDP is difficult if not impossible to determine by non-nuclear techniques. As a result, NDP is used collaboratively with techniques such as SIMS, RBS, FTIR, PGAA, and AES. Profiles measured by NDP are given for semiconductor and optical processing materials, and light weight alloys. Improvements in the technique are discussed with emphasis on the use of intense cold neutron beams.     

Improved sputter depth resolution in Auger composition‐depth profiling of polycrystalline thin film systems using single grain depth profiling

Today in‐depth profiling of microelectronics thin film systems is one of the important applications of Auger electron spectroscopy. It is used to monitor the elemental in‐depth composition after different manufacturing processes to control the quality of these processes. For instance, the layer interdiffusion and reactions with various process gases are analyzed. In addition, interface contaminations have to be controlled, because they strongly influence the properties of the whole thin film system. For polycrystalline layers, the depth resolution of sputter depth profiling is limited by the sputter yield differences attributed to grains having different crystalline orientations relative to the incoming ion beam. If depth profiling can be performed on single grains only, the poor depth resolution caused by these sputter yield differences can be avoided. Unfortunately, the approach works only on a few samples because single grains must be identified and have to have grain sizes that are in the dimensions of the layer thickness. Using methods of in situ sample preparation, however, allows application of single grain depth profiling to an extended range of thin film systems. Copyright © 2006 John Wiley & Sons, Ltd.     

On depth profiling from PIXE yields

The capabilities of a standard multiparametric fitting procedure for extracting concentration profiles from a set of PIXE yield measurements are evaluated for both: real Zn depletion profiles in an initially homogeneous Ag 3 at % Zn alloy, annealed under vacuum, and simulated sinusoidal profiles. The comparison with the profiles obtained via iteration plus smoothing shows that multiparametric fitting is more performing.     

New approaches for neutron depth profiling

The scope of NDP can be expanded by measuring (via time-of-flight) the kinetic energies of the recoils emitted from (n,p) or (n,) reactions. When they occur inside a solid, the energies of the emerging recoils reveal depth from which they originated. The Recoil Nucleus Time-of-Flight NDP (RN-TOF-NDP) technique can reveal the depth distribution of some isotopes (e.g.,¹⁰B,²¹⁰Bi) with a resolution of a few Å. Furthermore, it is possible to detect atomic and molecular species ejected at the surface site where the recoil emerges from the solid. This paper discusses the methodology for RN-TOF-NDP and its applications including surface analysis based on atomic and molecular ions codesorbed with the recoils.     

Chemically alternating langmuir-blodgett thin films as a model for molecular depth profiling by mass spectrometry

Langmuir-Blodgett multilayers of alternating barium arachidate and barium dimyristoyl phosphatidate are characterized by secondary ion mass spectrometry employing a 40 keV buckminsterfullerene (C60) ion source. These films exhibit well-defined structures with minimal chemical mixing between layers, making them an intriguing platform to study fundamental issues associated with molecular depth profiling. The experiments were performed using three different substrates of 306 nm, 177 nm, and 90 nm in thickness, each containing six subunits with alternating chemistry. The molecular subunits are successfully resolved for the 306 nm and 177 nm films by cluster ion depth profiling at cryogenic temperatures. In the depth profile, very little degradation was found for the molecular ion signal of the underneath layers compared with that of the top layer, indicating that the formation of chemical damage is removed as rapidly as it is formed. The resolving power decreases as the thickness of the alternating subunits decrease, allowing a depth resolution of 20 to 25 nm to be achieved. The results show the potential of LB films as an experimental model system for studying fundamental features of molecular depth profiling.     

Comparison of fullerene and large argon clusters for the molecular depth profiling of amino acid multilayers

A major challenge regarding the characterization of multilayer films is to perform high-resolution molecular depth profiling of, in particular, organic materials. This experimental work compares the performance of C₆₀ ⁺ and Ar₁₇₀₀ ⁺ for the depth profiling of model multilayer organic films. In particular, the conditions under which the original interface widths (depth resolution) were preserved were investigated as a function of the sputtering energy. The multilayer samples consisted of three thin δ-layers (~8 nm) of the amino acid tyrosine embedded between four thicker layers (~93 nm) of the amino acid phenylalanine, all evaporated on to a silicon substrate under high vacuum. When C₆₀ ⁺ was used for sputtering, the interface quality degraded with depth through an increase of the apparent width and a decay of the signal intensity. Due to the continuous sputtering yield decline with increasing the C₆₀ ⁺ dose, the second and third δ-layers were shifted with respect to the first one; this deterioration was more pronounced at 10 keV, when the third δ-layer, and a fortiori the silicon substrate, could not be reached even after prolonged sputtering. When large argon clusters, Ar₁₇₀₀ ⁺, were used for sputtering, a stable molecular signal and constant sputtering yield were achieved throughout the erosion process. The depth resolution parameters calculated for all δ-layers were very similar irrespective of the impact energy. The experimental interface widths of approximately 10 nm were barely larger than the theoretical thickness of 8 nm for the evaporated δ-layers.

Three-dimensional structures of dihydropyrans

The three-dimensional structures of alkyl- and aryldihydropyrans were studied by means of PMR spectroscopy. It is shown that the investigated compounds exist primarily in the half-chair conformation. Translated from Khimiya Geterotsiklicheskikh Soedinenii, No. 6, pp. 744–747, June, 1980.