A simple scanning semiconductor diode laser source and its application in wavelength modulation spectroscopy around 825 nm

A very simple and inexpensive tunable semiconductor diode laser controller is designed for stable operation of the diode laser. The diode laser controller is stable within +/−8 μA and +/−10 mK, respectively. The noise spectrum of the current controller is studied by FFT analysis. We have used our home-made diode laser system in a tunable diode laser absorption spectrometer (TDLAS) to probe weak overtone transitions of water vapour molecule. The diode laser wavelength is coarsely tuned by changing the operating temperature to probe (2, 1, 1)←(0, 0, 0) band overtone transitions of water vapour within 818–835 nm. To demonstrate line shape study, seven transitions are scanned by ramping the drive current of the diode laser (at constant operating temperature) under different perturber (laboratory air) pressures within the sample cell. A balanced detector and a lock-in amplifier are used for phase sensitive detection purpose. Small current modulation amplitude, balanced detection and proper adjustment of the lock-in amplifier help to obtain a S/N ratio ranging from 100 to 7 using a small sample path length of 1.5 m. Experimentally obtained derivative spectrum is numerically integrated to reveal the original line shape and fitted with a nonlinear least squares fitting program to extract air broadening coefficients and line strength parameters. The spectroscopic line parameters are compared with the results from HITRAN database.     

High repetition rate mid-infrared laser source

An efficient, high-power mid-infrared laser source based on ZnGeP₂ (ZGP) optical parametric oscillator (OPO) is presented. Using a Q-switched Ho:YAG laser as the pump source a total output power of 10.6 W was obtained in the 3–5 μm band at 10 kHz and 8.5 W at 20 kHz. The Ho:YAG laser was pumped by two diode-pumped polarization coupled Tm:YLF lasers. Optical-to-optical efficiency achieved is >8.8% (laser-diode 792 nm to mid-IR 3–5 μm). With a commercial PtSi infrared camera (256×256 pixel focal plane array, 24 μm pitch) the pointing stability of Ho pump, signal and idler beam was measured to be better than 30 μrad. Whilst propagating the OPO beams over 100 m, little absorption for the idler beam was observed, resulting in a significant higher peak-to-peak value of ±22%, whereas the peak-to-peak stability of the signal pulses remained unchanged (±13%). To cite this article: M. Schellhorn et al., C. R. Physique 8 (2007).     

Carbon nanotube–polymer composites for photonic devices

We report the fabrication of high optical quality single wall carbon nanotube polyvinyl alcohol composites and their application in nanotube based photonic devices. These show a broad absorption of semiconductor tubes centred at 1.55 μm, the spectral range of interest for optical communications. The films are used as mode-lockers in an erbium doped fibre laser, achieving 700 fs mode-locked pulses. Raman spectroscopy shows no damage after a long time continuous laser operation.     

The effect of relative plasma plume delay on the properties of complex oxide films grown by multi-laser, multi-target combinatorial pulsed laser deposition

We report the effects of relative time delay of plasma plumes on thin garnet crystal films fabricated by dual-beam, combinatorial pulsed laser deposition. Relative plume delay was found to affect both the lattice constant and elemental composition of mixed Gd₃Ga₅O₁₂ (GGG) and Gd₃Sc₂Ga₃O₁₂ (GSGG) films. Further analysis of the plasmas was undertaken using a Langmuir probe, which revealed that for relative plume delays shorter than 200 μs, the second plume travels through a partial vacuum created by the first plume, leading to higher energy ion bombardment of the growing film. The resulting in-plane stresses are consistent with the transition to a higher value of lattice constant normal to the film plane that was observed around this delay value. At delays shorter than 10 μs, plume propagation was found to overlap, leading to scattering of lighter ions from the plume and a change in stoichiometry of the resultant films.     

Microscopic phenomena found within enclosed surface laser ablation of 20 nm thick aluminium films

This paper investigates the microscopic features which occur when a four-layered film is ablated using Q-switched Nd:YAG laser. The four-layered films consist of a vacuum-deposited aluminium layer (0.02 μm) upon an oriented polypropylene (OPP) film (30 μm) which has been laminated using an inert adhesive and a second OPP film. Laser radiation is absorbed principally by the aluminium layer, melting and/or vaporising it. Upon cooling, the aluminium layer is rearranged into discrete microscopic particles, which give laser-treated areas of the film a transparent appearance. Within the films are found microscopic features, which can be divided into three distinct types: aluminium demetallisation features, polymer distortion features and particle features. Features from each of these categories can exist within a single laser track depending upon the laser parameters used for transparentisation.     

Synthesis and field emission of patterned ZnO nanorods

A simple and self-catalytic method has been developed for synthesizing finely patterned ZnO nanorods on ITO-glass substrates under a low temperature of 500 °C. The patterned ZnO nanorod arrays, a unit area is of 400 × 100 μm², are synthesized via vapor phase transport method. The surface morphology and composition of the as-synthesized ZnO nanorods are characterized by means of scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDX). The mechanism of formation of ZnO nanorods is also discussed. The measurement of field emission (FE) reveals that the as-synthesized ZnO nanorods arrays have a turn-on field of 3.3 V/μm at the current density of 0.1 μA/cm² and a low threshold field of 6.2 V/μm at the current density of 1 mA/cm². So this approach must have a potential application of fabricating micropatterned oxide thin films used in FE-based flat panel displays.     

Co:LaMgAl11O19 saturable absorber Q-switch for a 1.319 μm Nd:YAG laser

Passively Q-switched output of a flashlamp-pumped 1.319 μm Nd:YAG laser is realized by using Co²⁺:LaMgAl₁₁O₁₉ (Co:LMA) as saturable absorber. When initial transmission of the saturable absorber T₀ is 78%, a Q-switched output pulse with pulse width (FWHM) 44.8 ns and pulse energy 17.4 mJ is obtained, corresponding to 19.3% of the free-running energy under the equal pumping energy of 45.4 J. The experimental results show that the higher T₀ will result in a lower pumping threshold of the laser, but lower T₀ can make the laser generate pulses with higher single-pulse energy, narrower pulse width, and accordingly higher peak power.     

Electrical characterisation of phosphorus-doped ZnO thin films grown by pulsed laser deposition

Phosphorus-doped ZnO films were grown by pulsed laser deposition using a ZnO:P₂O₅-doped target as the phosphorus source with the aim of producing p-type ZnO material. ZnO:P layers (with phosphorus concentrations of between 0.01 to 1 wt%) were grown on a pure ZnO buffer layer. The electrical properties of the films were characterised from temperature dependent Hall-effect measurements. The samples typically showed weak n-type conduction in the dark, with a resistivity of 70 Ω cm, a Hall mobility of μ_n0.5 cm² V ⁻¹ s⁻¹ and a carrier concentration of n3×10¹⁷ cm⁻³ at room temperature. After exposure to an incandescent light source, the samples underwent a change in conduction from n- to p-type, with an increase in mobility and decrease in concentration for temperatures below 300 K.     

Compact 120 TW Ti:sapphire laser system with a high gain final amplifier

A 120 TW/36 fs laser system based on Ti:sapphire chirped-pulse amplification (CPA) has been successfully established in our lab. The final four pass Ti:sapphire amplifier pumped by an energetic single-shot Nd:YAG—Nd:glass laser was designed and optimized. With 24 J/8 ns pump energy at 532 nm, 300 mJ/220 ps chirped pulse was amplified to 5.98 J in this amplifier, and a total saturated gain of 20 was achieved. The focused intensity of compressed beam could reach to 10²⁰ W/cm² with the M² of 2.0.     

Low-threshold operation of a 355-nm pumped nanosecond β-BaB2O4 optical parametric oscillator

We report the low-threshold operation of a nanosecond β-BaB₂O₄ optical parametric oscillator (OPO) pumped by the third harmonic of a Q-switched Nd:YAG laser. Using cylindrical focusing of the pump beam, a threshold pulse energy of 0.5 mJ is obtained at the signal wavelength of 560 nm, which is about sixteen times lower than that of a spherical focusing configuration. The importance of diffraction loss in the design of tightly focused OPOs is discussed in terms of a simple extension of the conventional OPO model.     

Diffractive multi-beam surface micro-processing using 10 ps laser pulses

A high repetition rate picosecond laser system is combined with a spatial light modulator (SLM) for diffractive multiple beam processing. The effect of the zero order beam is eliminated by adding a Fresnel zone lens (FZL) to defocus the un-diffracted beam at the processing plane. Chromatic dispersion, which is evident with a large bandwidth femtosecond pulses leading to the problem of distorted hole shape is eliminated due to the much narrower spectral bandwidth, 0.1 nm at 10 ps pulselength, resulting in highly uniform intensity spots, independent of diffraction angle. In addition, high-throughput processing is demonstrated by combining the high power laser output, 2.5 W at λ ≈ 1064 nm and fast repetition rate, f ≈ 20 kHz with P > 1.2 W diffracted into 25 parallel beams. This has the effect of creating an “effective” repetition rate of 500 kHz without restrictive scan speeds.     

Structure and properties of the one-dimensional cobalt oxide CaCo2O4

We have studied crystal structure and transport properties of the quasi one-dimensional cobalt oxide CaCo₂O₄. The CaCo₂O₄ phase crystallizes in calcium-ferrite type structure, which consists of a corner- and edge-shared CoO₆ octahedron network including one-dimensional double chains. Large thermoelectric power (S  150 μV/K at 390 K) with metallic temperature dependence of S, moderate resistivity (ρ  2.9 × 10⁻¹ Ω cm at 390 K) with carrier localization at low temperature, and normal thermal conductivity (κ  6.3 W/Km at 390 K) were observed. The phonon mean-free path was calculated from the observed data, as a function of temperature. The long phonon mean-free path (l  24 Å at 300 K) implies that the thermal conductivity could be suppressed by impurity scattering of phonons with partial element substitution.     

Photonic generation of microwave signal using a dual-wavelength single-longitudinal-mode distributed Bragg reflector fiber laser

In this paper, a novel all-optical microwave generation technique based on a dual-wavelength single-longitudinal-mode (SLM) distributed Bragg reflector (DBR) fiber laser is proposed and demonstrated. By exploiting spatial hole burning (SHB) effect, this laser could provide stable dual-wavelength SLM operation with a wavelength separation of 0.088 nm corresponding to the microwave signal at 10.484 GHz with a 3 dB bandwidth of 28 kHz. By appropriately adjusting the pump power, dual-wavelength oscillation could be maintained at different temperatures. We have theoretically analyzed the mechanism for microwave generation of the proposed DBR laser, and the calculated microwave frequency is in good agreement with our experimental results. Furthermore, experimental observation shows both of the laser wavelengths and generated microwave signals have good stability at room temperature.     

Laser gain by electron collisional pumping of Ar VII–V XII

Gain coefficients have been calculated for transitions of singlet levels ns–np of orbital n=4 and n=5 in magnesium-like ions with atomic numbers Z=18, 19, 20, 21, 22 and 23. Population inversions for 4p and 5p levels in these ions were also calculated, via electron collisional excitation, for electron temperature range of 93–231 eV and electron density range of 10¹⁶–10¹⁷ cm⁻³. Under these plasma conditions, the maximum gain that occurred for 4s–4p transition was at electron temperature of 231 eV and electron density of 4×10¹⁷ cm⁻³. Scaling of the maximum gain coefficients with atomic number Z and the plasma parameters is also presented.     

Optical and structural properties of Eu-diffused and doped ZnO nanowires

Single crystal ZnO nanowires diffused with europium (Eu) from a solid source at 900 °C for 1 h or doped with Eu during growth have been characterized. The ZnO nanowires were grown by chemical vapor deposition on Si substrates employing Au as a catalyst. The diameter of the resulting nanowires was 200 nm with a length of 1 μm. Photoluminescence spectra excited by a He–Cd laser at room temperature showed the green luminescence at 515 nm in Eu-diffused nanowires. A small red shift of near-band-edge emission of ZnO nanowires was observed in the diffused wires, but sharp emission from Eu³ ions was not present. Transmission electron microscopy shows crystalline Eu₂O₃ formation on the diffused nanowire surface, which forms a coaxial heterostructure system. When Eu was incorporated during the nanowire growth, the sharp ⁵D_O–⁷F₂ transition of the Eu³⁺ ion at around 615 nm was observed.     

Growth of single crystal PrFeAsO1−y and its characterization

We have successfully grown single crystals of oxygen deficient oxypnictide superconductor PrFeAsO_1−y using high pressure synthesis technique. Typical crystal size is about 600 × 800 × 30 μm³, with its T_c = 44 K. Their resistivity measurements under magnetic field yield the anisotropic factor Γ  5, consistent with previous results on smaller single crystals.     

From Zn microspheres to hollow ZnO microspheres: A simple route to the growth of large scale metallic Zn microspheres and hollow ZnO microspheres

Large scale metallic Zn microspheres and hollow ZnO microspheres are synthesized by thermal evaporation and vapor transport by heating a ZnO/graphite mixture at 1000 °C. Firstly, metallic Zn microspheres are fabricated with diameters in the range of 1–10 μm. The Zn microspheres are then annealed at 600 °C in air, which form hollow semiconducting ZnO microspheres. EDX and XRD spectra reveal that the oxidized material is indeed ZnO. Room temperature photoluminescence spectra of the oxidized material show a sharp peak at 380 nm and a wider broad peak centered at 490 nm. This growth mechanism is discussed and further investigated for other metallic and metal oxide microstructures.     

The applications of the stark effect to the stabilization of the CO2 laser and the submillimeter laser

Methods based on the Stark effect are described for dither-free frequency stabilization of the optically pumped submm laser. The CO₂ pump laser was stabilized using a Stark Lamb dip signal of the submm lasant in an external Stark cell. An estimated frequency stability (f/f) better than ±1.4×10^–8, for one hour recording, was obtained by this method. The frequency of the submm laser was stabilized using the d.c. and a.c. Stark effects for a metal-dielectric rectangular waveguide laser. An estimated frequency stability of ±6×10^–8 was obtained for 119 m line of CH₃OH laser for one hour recording.     

ICLAS of HDO between 13,020 and 14,115 cm

The high resolution absorption spectrum of monodeuterated water, HDO, has been recorded by Intracavity Laser Absorption Spectroscopy (ICLAS) in the 13,020–14,115 cm⁻¹ region dominated by the 4ν₃ band. The achieved noise equivalent absorption (α_min10⁻⁹ cm⁻¹) allowed detecting transitions with line strengths as small as 2×10⁻²⁷ cm/molecule which is about 10 times lower than the smallest line intensities previously detected in the region.The rovibrational assignment of the spectrum was based on the results of the variational calculations of Schwenke and Partridge (SP) as well as recent calculations using a new potential energy surface performed by Voronin, Tolchenov and Tennyson (VTT). 2157 transitions involving 21 upper vibrational states were assigned to HD¹⁶O while only four bands were previously reported in the region. A set of 157 new energy levels could be derived. It includes rotational levels of several highly excited bending states, in particular the (0 11 0) pure bending state. For some states like the (1 0 3) and (0 2 3) Fermi dyad, effective Hamiltonian modelling was needed to establish the vibrational assignments of some rotational levels. VTT calculations were found to significantly improve the SP results, the rms deviation of the calculated and observed energies being decreased from 0.23 to 0.06 cm⁻¹.Finally, 79 transitions of the 4ν₃ band of the HD¹⁸O isotopologue were assigned, leading to the derivation of 48 levels, which are the most excited energy levels reported so far for this isotopologue.     

Mechanisms of the central mode particle formation during pulverized coal combustion

Ash particles produced from pulverized coal combustion are considered to be tri-modally distributed. These include the well-known ultrafine and coarse modes, and a central mode that is less reported but attracts increasing attention. This work presents a preliminary study on the formation mechanisms of the central mode particles during pulverized coal combustion. Experiments of four sized and density-separated coal samples were carried out in a laboratory drop-tube furnace under various controlled conditions. Experimental data show that the ash particle size distributions have an evident central mode at 4 μm for all coal samples. Increasing combustion temperature leads to an increase in the central mode particle formation, which is thought to be due to enhanced char fragmentation. The small-size coal sample produces a larger amount of the central mode particles, reasonably due to abundant fine particles in the parent coal sample. Under similar combustion conditions, both the Heavy (>2.0 g/cm³) and Light (<1.4 g/cm³) coal fractions produce a central mode, indicating that not only the included minerals but also the excluded minerals contribute to the formation of the central mode particles.