On the annealing of junction disclinations in deformed polycrystals

The kinetics of relaxation of disclination quadrupoles formed within triple junctions of grains during plastic deformation are studied. The calculations are made using the discrete dislocation model for disclinations by simulating the climb of dislocations. Exponential relationships are obtained for the relaxation of the strength and elastic energy of disclination quadrupoles with a characteristic time proportional to the cube of grain size. The distribution of vacancy fluxes along grain boundaries (GBs) during the relaxation of a disclination quadrupole is studied in detail. The relation between continuum and discrete dislocation approaches to a study of the GB recovery process is considered. Characteristics of each relaxation stage are studied. A hierarchy of characteristic relaxation times for dimerent grain size ranges is constructed and it is show that in nanocrystalline materials the spreading time of trapped lattice dislocations can depend on the grain size.     

Acoustic emission during the formation and breakdown of a dislocation cluster

We construct a model for the formation of a dislocation cluster and its evolution after the detachment of the head dislocation. The results obtained with the help of this model are used for calculating the acoustic emission signal accompanying the stages of cluster formation and breakdown. The elastic stresses in the signal under investigation are estimated. The data on relaxation of elastic stresses in the sample containing the cluster are reported.     

Elastic-energy relaxation in heterostructures with strained nanoinclusions

Elastic-energy relaxation in systems with nanoinclusions is considered. The relaxation is related to the formation of the following dislocation loops: a single misfit dislocation loop or a group of such loops on the matrix-nanoinclusion interface and/or a satellite dislocation loop near the inclusion. The critical inclusion sizes beginning from which misfit dislocation loops and satellite dislocation loops can nucleate are determined for various models of relaxation processes. The dependences of the satellite-dislocation-loop diameter on the inclusion size are calculated and compared with experimental data.     

Dipole of edge misfit dislocations and critical radius conditions for buried strained cylindrical inhomogeneity

A theoretical model is proposed for elastic stress relaxation of a buried strained cylindrical inhomogeneity, which assumes the edge misfit dislocation dipole formation in the soft matrix at some distance from the interface. The critical radius of the inhomogeneity for the formation of the edge misfit dislocation dipole is given and the influence of various parameters on the critical radius is evaluated. The result indicates that the critical radius decreases with increasing misfit strain and core radius of the misfit dislocation. It is also found that, compared to the edge misfit dislocation dipole formation in the interface, the critical radius of the inhomogeneity decreases when the location of an edge misfit dislocation dipole formation is in the soft matrix at some distance from the interface.     

The Model of Dynamic Stress Relaxation of Elastoplastic Materials

Russian Physics Journal - The paper proposes the model of relaxation of the loaded elastoplastic material, with the dislocation kinetics of plastic shear. The proposed model includes two...     

Redistribution of dislocations in silicon near stress concentrators

The distribution of defects in dislocation tracks in silicon plates was studied for various indentation angles. The regularities of variations in the linear density and maximum path of dislocations in slip bands are established. A model is proposed to describe the distribution of dislocations in the dislocation tracks. By fitting the theory to the experimental data, the dependence of this distribution on the energy relaxation time is determined.     

Dislocation mechanism of hollow fiber sliding during ceramic nanocomposite fracture

A dislocation model is proposed for describing the sliding of hollow fibers (and, in particular, carbon nanotubes) as a mechanism of elastic energy relaxation near cracks in ceramic nanocomposites. In this model, the sliding of a hollow cylindrical fiber occurs through the formation of a prismatic circular dislocation loop gliding along the boundary between the fiber and the matrix. The energy characteristics of this process are calculated, and the critical stress required for the barrierless nucleation and glide of such a loop is determined. It is shown that the critical stress increases with the ratio between the shear moduli of the matrix and the fiber and (over a wide range of changes in this ratio) with the fiber wall thickness.     

Critical shape and size for dislocation nucleation in Si1-xGex islands on Si(001)

The critical volume for the onset of plastic strain relaxation in SiGe islands on Si(001) is computed for different Ge contents and realistic shapes by using a three-dimensional model, with position-dependent dislocation energy. It turns out that the critical bases for dome- and barnlike islands are different for any composition. By comparison to extensive atomic force microscopy measurements of the footprints left on the Si substrates by islands grown at different temperatures (and compositions), we conclude that, in contrast with planar films, dislocation nucleation in 3D islands is fully thermodynamic.     

Theory of magnetoresistance due to lattice dislocations in face-centred cubic metals

A theoretical model to describe the low temperature magneto-resistivity of high purity copper single and polycrystals containing different density and distribution of dislocations has been developed. In the model, magnetoresistivity tensor is evaluated numerically using the effective medium approximation. The anisotropy of dislocation-induced relaxation time is considered by incorporating two independent energy bands with different relaxation times and the spherical and cylindrical Fermi surfaces representing open, extended and closed electron orbits. The effect of dislocation microstructure is introduced by means of two adjustable parameters corresponding to the length and direction of electron orbits in the momentum space, which permits prediction of magnetoresistance of FCC metals containing different density and distribution of dislocations. The results reveal that dislocation microstructure influences the character of the field-dependent magnetoresistivity. In the orientation of the open orbits, the quadratic variation in magnetoresistivity changes to quasi-linear as the density of dislocations increases. In the closed orbit orientation, dislocations delay the onset of magnetoresistivity saturation. The results indicate that in the open orbit orientations of the crystals, the anisotropic relaxation time due to small-angle dislocation scattering induces the upward deviation from Kohler’s rule. In the closed orbit orientations Kohler’s rule holds, independent of the density of dislocations. The results obtained with the model show good agreement with the experimental measurements of transverse magnetoresistivity in deformed single and polycrystal samples of copper at 2 K.     

On the vibrational spectrum of a parallel dislocation array

The free vibrations of dislocation arrays of different types (monopole and dipole dislocation walls and a planar dislocation array) have been investigated on the basis of the dispersion equation derived within the self-consistent dynamic theory of dislocations. The relaxation spectrum of a planar dislocation array in the strong damping mode has also been analyzed.     

Change in the plastic properties of ionic crystals under UV irradiation

The effect of UV irradiation on the dislocation motion in ionic crystals and relaxation growth of elastic twin in Iceland spar has been investigated. It is shown that UV radiation causes stress relaxation in crack tips, which is related to a change in the dislocation structure. It is suggested that the observed effects are based on the interaction of dislocations with low-energy excitons.     

间隙原子非线性应力感生扩散的简化弹性偶极子模型

为了阐明体心立方晶体中外应力、位错应力和八面体间隙原子相互作用的本质,从理论上解释S-K弛豫和位错对Snoek弛豫的影响,提出一个简化的含有可动位错的一维弹性偶极子格点模型,讨论位错应力场中间隙原子的非线性应力感生扩散,为进一步对实际晶体的从头数值计算奠定基础。对一维模型的计算机模拟计算,表明位错应力场使得间隙原子形成具有非线性扩散特征的缺陷Fermi-Dirac分布,并增强了Snoek效应,在Snoek峰高温侧出现一个非线性扩散Snoek型内耗峰。 关键词：     

Equilibrium critical thickness for a wurtzite InGaN/GaN heterostructure

We present a finite element model to simulate a combined strained In_xGa_1−xN/GaN heterostructure and an edge misfit dislocation on the basal {0001} slip plane, taking the anisotropic elasticity into account. The introduction of a misfit dislocation partially relaxes the misfit strain. The model directly gives the residual strain, which is the exact strain field stored in the system after relaxation. The critical thickness is then determined based on an overall energy minimization approach including the dislocation core contribution. Compared with the results from other methods and available experimental data, our approach is appropriate for describing the critical thickness of the wurtzite InGaN/GaN material system.     

Effect of positive muon trapping by dislocations

Aluminum was deformed at room temperature so that vacancies are annealed out and only dislocations are remained. The muon spin depolarization rate was found to be decreased as the temperature is raised. This indicates that some trapping-detrapping occur. Fitting the spin relaxation to the calculated spin relaxation function for the trapping-detrapping model, the values of the activation energy for the trapping rate and detrapping rate and of the depolarization rate at the trapping are found to be 25 meV, 66 meV, and 0.24 sec^–1, respectively for the best fit. This indicates that positive muons diffuse to dislocations and diffuse along dislocation lines and are trapped at a jog of the dislocation, and detrap from the jog.     

Role of the dislocation screw component in the formation of the dislocation structure in Ge- and Si-based semiconductor heterosystems

The possibility of solving the problem of propagating dislocations in heterosystems by means of decreasing the number of dislocation families participating in the process of misfit stress relief has been investigated. The system of Γ-shaped misfit dislocations, which is proposed in the literature as the optimal type of plastic relaxation, has been analyzed. Taking into account the effect of the screw dislocation component, this suggestion is valid only for the initial stage of relaxation. The results of simulation of the process of plastic relaxation and experimental investigations of structures containing L-shaped dislocations are presented. Misfit stress relief in heterostructures grown on vicinal substrates has been theoretically and experimentally investigated.     

Less strain energy despite fewer misfit dislocations: the impact of ordering

The average strain state of Ge films grown on Si(111) by surfactant mediated epitaxy has been compared to the ordering of the interfacial misfit dislocation network. Surprisingly, a smaller degree of average lattice relaxation was found in films grown at higher temperature. On the other hand, these films exhibit a better ordered dislocation network. This effect energetically compensates the higher strain at higher growth temperature, leading to the conclusion that, apart from the formation of misfit dislocations, their ordering represents an important channel for lattice-strain energy relaxation.     

Dislocation jamming and andrade creep

We simulate the glide motion of an assembly of interacting dislocations under the action of an external shear stress and show that the associated plastic creep relaxation follows Andrade's law. Our results indicate that Andrade creep in plastically deforming crystals involves the correlated motion of dislocation structures near a dynamic transition separating a flowing from a jammed phase. Simulations in the presence of dislocation multiplication and noise confirm the robustness of this finding and highlight the importance of metastable structure formation for the relaxation process.     

Investigation of stress relaxation mechanisms for ductility improvement in SS316L

Stress relaxation during plastic deformation has been reported to improve ductility and alter the mechanical properties of metallic materials. The aim of the present study is to investigate the role of various mechanisms responsible for this in stainless steel SS 316L. The fractography of the tested samples is analysed using an image analyser and the void fraction at failure is correlated with the corresponding mechanisms. The parametric studies on stress relaxation at different pre-strain and relaxation time correlate well with the fractography results supporting the proposed mechanisms. TEM investigation of dislocation structures and void characterisation further confirm the role of dislocation annihilation. Moreover, a novel indentation technique combining micro- and nano-indentation techniques is used to verify the role of stress homogenisation mechanism.     

Misfit dislocation loops in composite nanowires

A new mechanism for relaxation of misfit stresses in composite nanowires (quantum wires) is suggested and theoretically examined, namely the formation of misfit dislocation loops. The stress field of a prismatic dislocation loop in a cylinder (nanowire) is calculated. The parameters of two-phase composite nanowires at which the formation of misfit dislocation loops is energetically favourable are estimated. The effect of stress fields of dislocation loops on the formation of compositionally modulated nanowires is discussed.