Electrostatic coupling with interfacial free charge in ferroelectric-paraelectric bilayers and superlattices

Based on a thermodynamic model, we studied the interfacial free charge effect on the polarization, spatial inversion symmetry, and dielectric response in ferroelectric-paraelectric bilayer. The broken spatial inversion symmetry and imprint due to free charge are not found. Effect of free charge on the dielectric constant is not monotonic. Contradiction between the equilibrium polarization and non-linear field-induced dielectric polarization in paraelectric layer is found. Our study reveals that treating coupling strength as an “input” parameter taken dependent of the polarization is inappropriate to describe electrostatic coupling with interfacial free charge.     

Isotopic phonon effects in LaB(6)-LaB(6) do not possess cubic symmetry and show a non-random isotope distribution

The isotopic phonon effects in LaB(6) are investigated on the Raman spectra of a series of high-quality single crystals with systematically varied contents of (10)B and (11)B isotopes. A detailed group theoretical analysis enlightens the correlation between distortions of the B(6) octahedra and the splitting or broadening of phonon modes. It is evident that LaB(6) does not have cubic symmetry as assumed so far. A further symmetry reduction of the B(6) octahedra occurs in isotopically mixed crystals. There, the distribution of isotopes is not random as commonly assumed; the probability of associating equal isotopes increases with their mass decreasing.     

Period dependence of coherent oscillations in manganite superlattices

In three-component superlattices of [(NdMnO3)_n/(SrMnO3)_n/(LaMnO3)_n]_m consisting of nonferroelectric and antiferromagnetic layers, the generation of coherent phonons in the system is investigated by the relaxation process of the superlattice using a pump–probe technique. The coherent phonons are related to MnO₆ octahedra in the layers. While the frequency of the phonons is 49 GHz without regard to the period of each layer, the amplitude of the phonons is influenced by the period of the superlattices. The superlattices have the maximum amplitude of the acoustic phonons at a period of (5, 12) together with strong emergent interfacial effects such as ferromagnetism and ferroelectricity, which are not present in bulk materials. This implies a possible correlation of the lattice structure with interface-induced properties.     

Development of novel materials through interface engineering

The impact of interfaces in the processing and properties of polycrystalline material is briefly discussed. The local properties of the interfacial layer are considered in terms of composition, structure and related properties that differ substantially from those of the bulk phase. It has been postulated that novel materials with desired properties for specific industrial applications may be processed through interface engineering rather than through bulk chemistry. This paper considers the impact of interfaces on the properties of materials for technological applications, such as electrochemical devices for reduction of greenhouse gases, through energy conversion and environmental monitoring. The procedures that may be applied for the modification of interfacial chemistry are considered.     

Inverse ultrasonic determination of imperfect interfaces and bulk properties of a layer between two solids

A method for determination of the complete set of physical, geometrical, and interfacial properties of an isotropic layer embedded between two known solids is discussed. These properties are: Lamé elastic moduli, density and thickness of the layer, and complex normal and transverse interfacial stiffnesses between the layer and the substrates. The properties are combined in the form of eight nondimensional parameters, which are determined from experimental reflection spectra at two incident angles: normal and oblique. The conditions for simultaneous determination of bulk layer properties and the interface normal and transverse springs with losses and the stability of the inversion method against data scatter are addressed. The inversion model is validated by experiment on normal and angular ultrasonic reflectivity from a layer between two semispaces in dry mechanical contact and from an environmentally degraded adhesive joint. The layer properties were measured independently, showing good agreement with the reconstructed results.     

Charge and orbital order in frustrated Pb3Mn7O15

The candidate magnetoelectric Pb(3)Mn(7)O(15) has a structure consisting of one-third filled kagome layers linked by ribbons of edge sharing octahedra in the stacking direction. Previous reports have indicated a complex hexagonal-orthorhombic structural transition upon cooling through ~335 K, although its origins are uncertain. Here both structures are revisited using a combination of neutron and synchrotron x-ray diffraction data. Large shifts of oxygen positions are detected, which show that the interlayer sites and those which occupy voids in the kagome lattice are trivially charge ordered in both phases. The symmetry breaking is found to occur due to Mn(3+) orbital ordering on the ribbon sites and charge ordering of the subset of layer sites which make up a kagome network.     

铁电双层膜的反转动力学行为

基于Landau-Khalatnikov运动方程,本文研究了含有表面过渡层和铁电界面耦合的反转动力学行为(包括平均极化、反转时间、反转电流和矫顽场).研究结果表明:在铁电双层膜系统中存在一个竞争的机理,即表面过渡层与界面耦合的竞争作用.我们发现在双层膜反转过程中出现了反常行为,这些反常行为归因于表面过渡层与界面耦合之间的竞争.表面过渡层与界面耦合的共同行为对铁电双层膜的动力学特性起到了决定性的作用.     

Local structures around Cu2+ and Zn2+ions related to cooperative jahn-teller distortions in dilute systems of K2Cu x .Zn1F4

The structural properties of the dilute systems of K₂Cu _x Zn_{1 x} F4 have been studied by means of X-ray absorption fine structure (EXAFS) for the Cu-K edge and Zn-K edges. It is found that there are rigid-like Jahn-Teller distortions of the CuF₆ octa-hedra in the region of 0.0 < x ≤ 1.0. It is also found that, in dilute systems, the ZnF₆ octahedra at least show two kinds of shapes, of which one is characterized to have a 2-fold symmetry axis and the other to have a 4-fold symmetry axis in the (x-y) plane. Thus, the inner strains induced by the replacement of the Zn atoms by the Cu atoms are localized around the Zn atoms, and can be reduced by the appearance of the former ZnF₆ octahedra showing a pseudo Jahn-Teller distortion.     

Characterization methods for liquid interfacial layers

Liquid interfaces are met everywhere in our daily life. The corresponding interfacial properties and their modification play an important role in many modern technologies. Most prominent examples are all processes involved in the formation of foams and emulsions, as they are based on a fast creation of new surfaces, often of an immense extension. During the formation of an emulsion, for example, all freshly created and already existing interfaces are permanently subject to all types of deformation. This clearly entails the need of a quantitative knowledge on relevant dynamic interfacial properties and their changes under conditions pertinent to the technological processes. We report on the state of the art of interfacial layer characterization, including the determination of thermodynamic quantities as base line for a further quantitative analysis of the more important dynamic interfacial characteristics. Main focus of the presented work is on the experimental possibilities available at present to gain dynamic interfacial parameters, such as interfacial tensions, adsorbed amounts, interfacial composition, visco-elastic parameters, at shortest available surface ages and fastest possible interfacial perturbations. The experimental opportunities are presented along with examples for selected systems and theoretical models for a best data analysis. We also report on simulation results and concepts of necessary refinements and developments in this important field of interfacial dynamics.     

石墨烯衍生物作为有机太阳能电池界面材料的研究进展

本文综述了石墨烯及其衍生物作为界面材料在有机太阳能电池中的应用, 包括作为阳极界面层、阴极界面层和叠层电池中间层等方面. 氧化石墨烯由于较好的透光性, 易于分散在水溶液中与溶液加工等优点已被应用在有机太阳能电池中. 对氧化石墨烯作为阳极界面层的研究包括通过部分还原或掺杂提高其导电性、通过引入高负电性原子提高其表面功函数, 以及通过与其他材料复合提高性能等. 同时, 本文综述了石墨烯衍生物及复合材料作为有机太阳能电池阴极界面层和叠层电池中间层的研究. 最后本文展望了石墨烯及其衍生物在有机太阳能电池与有机无机复合钙钛矿太阳能电池中的应用前景.     

Ab initio calculations of interfacial magnetism in Fe/Mo superlattices

Ab initio calculations have been performed on Fe/Mo(1 0 0) superlattices in order to study the interfacial magnetic properties and layer thickness effect on the magnetic moments. In most cases, the magnetic moments of interfacial Fe monolayers are always smaller than those of the inner layers, and the induced magnetic moments of interfacial Mo monolayers oriented in the opposite direction. Calculation results show that the Fe layers are ferromagnetic when n = 3. As the thickness of the Mo layers increases, the influence of the Mo layer increases and the magnetic state of the Fe layer gradually changes into an antiferromagnetic or non-magnetic state. The change of magnetic moments of Fe/Mo superlattices is in agreement with the experimentally observed oscillation periods.     

Interfacial structure and electrical properties of LaAlO3 gate dielectric films on Si by metalorganic chemical vapor deposition

LaAlO₃ (LAO) gate dielectric films were deposited on Si substrates by low-pressure metalorganic chemical vapor deposition. The interfacial structure and composition distribution were investigated by high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), secondary-ion mass spectroscopy (SIMS), and Auger-electron spectroscopy (AES). HRTEM confirms that there exists an interfacial layer between LAO and Si in most samples. AES, SIMS, and XPS analyses indicate that the interfacial layer is compositionally graded La–Al silicate and the Al element is severely deficient close to the Si surface. Electrical properties of LAO films were evaluated. No evident difference in electrical properties between samples with and without native SiO₂ layers was observed. The electrical properties are discussed in terms of LAO growth mechanisms, in relation to the interfacial structure. PACS 73.40.Qv; 81.15.Gh; 77.55.+f; 68.35.-p     

外场作用下铁电/铁磁双层膜的极化磁化性质

建立了铁电/铁磁双层膜模型,铁电层的电矩用连续标量描述,而铁磁层的自旋应用经典矢量描述.利用蒙特卡罗方法模拟了体系的热力学性质和极化、磁化行为.给出了零场下体系的内能、比热、极化和磁化随温度变化的关系,并分别研究了体系在外磁场和外电场下的极化和磁化行为.模拟结果表明,双层膜体系的内能、比热、极化和磁化性质因层间耦合系数的不同而明显不同,当界面耦合较弱时,双层膜表现出各自的热力学性质,当层间耦合增强到一定程度时,双层膜耦合为一个整体,表现出统一的热力学性质.该双层膜在外场中形成电滞回线和磁滞回线,并表现出偏置特性,界面耦合强度和温度影响滞后回线和偏置现象.     

Spin-injection efficiency and magnetoresistance in a hybrid ferromagnetic-semiconductor trilayer with interfacial barriers

We present a self-consistent model of spin transport in a ferromagnetic (FM)-semiconductor (SC)-FM trilayer structure with interfacial barriers at the FM-SC boundaries. The SC layer consists of a highly doped n²⁺ AlGaAs-GaAs 2DEG while the interfacial resistance is modeled as delta potential (δ) barriers. The self-consistent scheme combines a ballistic model of spin-dependent transmission across the δ-barriers, and a drift-diffusion model within the bulk of the trilayer. The interfacial resistance (R_I) values of the two junctions were found to be asymmetric despite the symmetry of the trilayer structure. Transport characteristics such as the asymmetry in R_I, spin-injection efficiency and magnetoresistance (MR) are calculated as a function of bulk conductivity σ_s and spin-diffusion length (SDL) within the SC layer. In general a large σ_s tends to improve all three characteristics, while a long SDL improves the MR ratio but reduces the spin-injection efficiency. These trends may be explained in terms of conductivity mismatch and spin accumulation either at the interfacial zones or within the bulk of the SC layer.     

Interfacial Ferromagnetism in a Co/CdTe Ferromagnet/Semiconductor Quantum Well Hybrid Structure

The magnetization properties of a ferromagnet-semiconductor Co/CdMgTe/CdTe quantum well hybrid structure are investigated by several techniques. Exploiting the proximity effect between acceptor bound holes and magnetic ions we detect the magnetization curves by measuring the circular polarization of photoluminescence in an out-of-plane magnetic field. We show that magnetization originates from interfacial ferromagnet on Co-CdMgTe interface and the proximity effect is caused by magnetization of interfacial Co-CdMgTe ferromagnetic layer whose magnetic properties are very different from Co.     

Stress-induced leakage currents of the RF sputtered Ta2O5 on N-implanted silicon

The electrical (C-V and I-V) and reliability (constant current stress technique) properties of RF sputtered 30 nm thick Ta₂O₅ on N-implanted Si have been investigated. The dependence on the parameters of both Ta₂O₅ and the implanted interfacial layers on the stress time are discussed. The leakage current characteristics are analyzed by previously proposed comprehensive model. It is established that the reliability of the Ta₂O₅-based capacitors can be effectively improved if the Si substrate is a subject to preliminary N-implantation—markedly smaller stress induced leakage current as compared to the films on bare Si are detected. The stress mainly affects the properties of the interfacial layer and the generation of neutral traps is identified to be the primary cause for the stress-induced degradation. It is concluded that the implantation results in a strengthening of the interfacial layer against stress degradation.     

Simulation studies of current transport in metal–insulator–semiconductor Schottky barrier diodes

The current–voltage characteristics of Schottky diodes with an interfacial insulator layer are analysed by numerical simulation. The current–voltage data of the metal–insulator–semiconductor Schottky diode are simulated using thermionic emission diffusion (TED) equation taking into account an interfacial layer parameter. The calculated current–voltage data are fitted into ideal TED equation to see the apparent effect of interfacial layer parameters on current transport. Results obtained from the simulation studies shows that with mere presence of an interfacial layer at the metal–semiconductor interface the Schottky contact behave as an ideal diode of apparently high barrier height (BH), but with same ideality factor and series resistance as considered for a pure Schottky contact without an interfacial layer. This apparent BH decreases linearly with decreasing temperature. The effects giving rise to high ideality factor in metal–insulator–semiconductor diode are analysed. Reasons for observed temperature dependence of ideality factor in experimentally fabricated metal–insulator–semiconductor diodes are analysed and possible mechanisms are discussed.     

Influence of AlN interfacial layer on electrical properties of high-Al-content Al0.45Ga0.55N/GaN HEMT structure

Unintentionally doped high-Al-content Al_0.45Ga_0.55N/GaN high electron mobility transistor (HEMT) structures with and without AlN interfacial layer were grown by metal-organic chemical vapor deposition (MOCVD) on two-inch sapphire substrates. The effects of AlN interfacial layer on the electrical properties were investigated. At 300 K, high two-dimensional electron gas (2DEG) density of 1.66 × 10¹³ cm⁻² and high electron mobility of 1346 cm² V⁻¹ s⁻¹ were obtained for the high Al content HEMT structure with a 1 nm AlN interfacial layer, consistent with the low average sheet resistance of 287 Ω/sq. The comparison of HEMT wafers with and without AlN interfacial layer shows that high Al content AlGaN/AlN/GaN heterostructures are potential in improving the electrical properties of HEMT structures and the device performances.     

Amorphous hydrogenated carbon films on semiconductors

The adhesion quality of amorphous hydrogenated carbon films (a-C:H) on semiconductor substrates depends to a large degree on the properties of the interface. The present work complements the photoemission results of the preceding paper with a detailed investigation of the atomic structure of the a-C:H/Si and a-C:H/GaAs interfaces. We show that the method of substrate cleaning and the deposition parameters affect the thickness of the interfacial layer and the interface roughness. The carbide compounds that form in the interfacial layer are found to be amorphous and we present evidence for the precipitation of metallic Ga at the a-C:H/GaAs interface. Finally, we have determined the extent of atomic intermixing in the interfacial region and compare our results with different mechanisms of adhesion.