Theory of the phonon Hall effect in paramagnetic dielectrics

Based upon Raman spin-lattice interaction, we propose a theoretical model for the phonon Hall effect in paramagnetic dielectrics, which was discovered recently in an experiment [C. Strohm, G. L. J. A. Rikken, and P. Wyder, Phys. Rev. Lett. 95, 155901 (2005).]. The phonon Hall effect is revealed to be a phonon analogue to the anomalous Hall effect in electron systems. The thermal Hall conductivity is calculated by using the Kubo formula. Our theory reproduces the essential experimental features of the phonon Hall effect, including the sign, magnitude, and linear magnetic field dependence of the thermal Hall conductivity.     

Electric Field Effect on the Fractional Quantum Hall Conductivity

We have studied the effect of an external electric field on the dc fractional quantum Hall conductivity of a two-dimensional system with the dynamic structure function in the single-mode approximation. In analogy with the integral quantum Hall effect and euperconductivity, a gap-dependent critical electric current J_c, also exists in the case of fracctional quantum Hall conduction, above which is the maximum current for system to maintain superfluidity. We also find that, depending on the gap width and the phonon velocity, phonon may or may not contribute to the conductivity even at a finite lattice temperature, in agreement with experiments.     

Phenomenological evidence for the phonon Hall effect

In the electrical Hall effect, a magnetic field, applied perpendicular to an electrical current, induces through the Lorentz force a voltage perpendicular to the field and the current. It is generally assumed that an analogous effect cannot exist in the phonon thermal conductivity, as there is no charge transport associated with phonon propagation. In this Letter, we argue that such a magnetotransverse thermal effect should exist and experimentally demonstrate this "phonon Hall effect" in Tb3Ga5O12.     

The quantum hall effect for electrons in a random potential

We assume the existence of sufficiently localised states, near the edges of each Landau band. We then prove that the Hall conductivity is quantised and the parallel conductivity vanishes, when the filling factor stays close to an integer. The Hall integer is a topological invariant, given by the Landau band index. We also prove that at weak disorder, the localisation length diverges in each Landau band.     

Lattice electrons on a cylinder surface in the presence of rational magnetic flux and disorder

We consider a disordered two-dimensional system of independent lattice electrons in a perpendicular magnetic field with rigid confinement in one direction and generalized periodic boundary conditions (GPBC) in the other direction. The objects investigated numerically are the orbits in the plane spanned by the energy eigenvalues and the corresponding center of mass coordinate in the confined direction, parameterized by the phase characterizing the GPBC. The Kubo Hall conductivity is expressed in terms of the winding numbers of these orbits. For vanishing disorder the spectrum of the system consists of Harper bands with energy levels corresponding to the edge states within the band gaps. Disorder leads to broadening of the bands. For sufficiently large systems localized states occur in the band tails. We find that within the mobility gaps of bulk states the Diophantine equation determines the value of the Hall conductivity as known for systems with torus geometry (PBCs in both directions). Within the spectral bands of extended states the Hall conductivity fluctuates strongly. For sufficiently large systems the generic behavior of localization-delocalization transitions characteristic for the quantum Hall effect are recovered.     

Ab initio calculation of the intrinsic spin Hall effect in semiconductors

Relativistic band theoretical calculations reveal that intrinsic spin Hall conductivity in hole-doped archetypical semiconductors Ge, GaAs, and AlAs is large [approximately 100(planck/e)(Omega cm)(-1)], showing the possibility of a spin Hall effect beyond the four-band Luttinger Hamiltonian. The calculated orbital-angular-momentum (orbital) Hall conductivity is one order of magnitude smaller, indicating no cancellation between the spin and orbital Hall effects in bulk semiconductors. Furthermore, it is found that the spin Hall effect can be strongly manipulated by strains, and that the ac spin Hall conductivity is large in pure as well as doped semiconductors.     

Anomalous Hall effect in ferromagnetic semiconductors in the hopping transport regime

We present a theory of the anomalous Hall effect in ferromagnetic (Ga,Mn)As in the regime when conduction is due to phonon-assisted hopping of holes between localized states in the impurity band. We show that the microscopic origin of the anomalous Hall conductivity in this system can be attributed to a phase that a hole gains when hopping around closed-loop paths in the presence of spin-orbit interactions and background magnetization of the localized Mn moments. Mapping the problem to a random resistor network, we derive an analytic expression for the macroscopic anomalous Hall conductivity sigma(AH)(xy). We show that sigma(AH)(xy) is proportional to the first derivative of the density of states varrho(epsilon) and thus can be expected to change sign as a function of impurity band filling. We also show that sigma(AH)(xy) depends on temperature as the longitudinal conductivity sigma(xx) within logarithmic accuracy.     

The quantum anomalous Hall effect on a star lattice with spin-orbit coupling and an exchange field

We study a star lattice with Rashba spin-orbit coupling and an exchange field and find that there is a quantum anomalous Hall effect in this system, and that there are five energy gaps at Dirac points and quadratic band crossing points. We calculate the Berry curvature distribution and obtain the Hall conductivity (Chern number ν) quantized as integers, and find that ν?=-?1,2,1,1,2 when the Fermi level lies in these five gaps. Our model can be viewed as a general quantum anomalous Hall system and, in limit cases, can give what the honeycomb lattice and kagome lattice give. We also find that there is a nearly flat band with ν?=?1 which may provide an opportunity for realizing the fractional quantum anomalous Hall effect. Finally, the chiral edge states on a zigzag star lattice are given numerically, to confirm the topological property of this system.     

Topological response theory of doped topological insulators

We generalize the topological response theory of three-dimensional topological insulators (TI) to metallic systems-specifically, doped TI with finite bulk carrier density and a time-reversal symmetry breaking field near the surface. We show that there is an inhomogeneity-induced Berry phase contribution to the surface Hall conductivity that is completely determined by the occupied states and is independent of other details such as band dispersion and impurities. In the limit of zero bulk carrier density, this intrinsic surface Hall conductivity reduces to the half-integer quantized surface Hall conductivity of TI. Based on our theory we predict the behavior of the surface Hall conductivity for a doped topological insulator with a top gate, which can be directly compared with experiments.     

Phonon considerations in the reduction of thermal conductivity in phononic crystals

Periodic porous structures offer unique material solutions to thermoelectric applications. With recent interest in phonon band gap engineering, these periodic structures can result in reduction of the phonon thermal conductivity due to coherent destruction of phonon modes characteristic in phononic crystals. In this paper, we numerically study phonon transport in periodic porous silicon phononic crystal structures. We develop a model for the thermal conductivity of phononic crystal that accounts for both coherent and incoherent phonon effects, and show that the phonon thermal conductivity is reduced to less than 4% of the bulk value for Si at room temperature. This has substantial impact on thermoelectric applications, where the efficiency of thermoelectric materials is inversely proportional to the thermal conductivity.     

Unraveling the effect of uniaxial strain on thermoelectric properties of Mg_2Si: A density functional theory study

In this work, the effect of uniaxial strain on electronic and thermoelectric properties of magnesium silicide using density functional theory(DFT) and Boltzmann transport equations has been studied. We have found that the value of band gap increases with tensile strain and decreases with compressive strain. The variations of electrical conductivity,Seebeck coefficient, electronic thermal conductivity, and power factor with temperatures have been calculated. The Seebeck coefficient and power factor are observed to be modified strongly with strain. The value of power factor is found to be higher in comparison with the unstrained structure at 2% tensile strain. We have also calculated phonon dispersion, phonon density of states, specific heat at constant volume, and lattice thermal conductivity of material under uniaxial strain. The phonon properties and lattice thermal conductivity of Mg_2Si under uniaxial strain have been explored first time in this report.     

Unconventional anomalous Hall effect enhanced by a noncoplanar spin texture in the frustrated Kondo lattice Pr2Ir2O7

We have investigated the Hall effect in the geometrically frustrated Kondo lattice Pr2Ir2O7. In its spin-liquid-like paramagnetic regime, the Hall resistivity rho(xy) is found to increase logarithmically on cooling. Moreover, in this low temperature region, the field dependence of the Hall conductivity sigma(xy) shows a large enhancement up to 30 Omega(-1) cm(-1) as well as a nonmonotonic change with the magnetization. Our results are far different from the anomalous Hall effect due to the spin-orbit coupling observed in ordinary magnetic conductors. We discuss the possible spin-chirality effect in the Ir 5d conduction band due to the noncoplanar texture of Pr<111> Ising-like moments.     

Absence of skew scattering in two-dimensional systems: testing the origins of the anomalous Hall effect

We study the anomalous Hall conductivity in spin-polarized, asymmetrically confined two-dimensional electron and hole systems, taking into account the intrinsic, side-jump, and skew-scattering contributions to the transport. We find that the skew scattering, principally responsible for the extrinsic contribution to the anomalous Hall effect, vanishes for the two-dimensional electron system if both chiral Rashba subbands are partially occupied, and vanishes always for the two-dimensional hole gas studied here, regardless of the band filling. Our prediction can be tested with the proposed coplanar two-dimensional electron-hole gas device and can be used as a benchmark to understand the crossover from the intrinsic to the extrinsic anomalous Hall effect.     

Transport coefficients and flux motion in Bi2Sr2CaCu2Ox single crystals

We present measurements of the electrical resistivity, thermal conductivity, and Hall, Nernst, and Seebeck effects in the mixed state of single crystalline Bi₂Sr₂CaCu₂O_x. It is shown that the sign of the Hall voltage changes twice as temperature decreases below T_c. From the Nernst effect we estimate the transport entropy S_φ to be about 10⁻¹⁰ erg/K cm. S_φ is equal to zero in the normal state, increases and passes through a maximum at the mixed state as expected. The temperature dependences of the thermoelectric power in magnetic fields are analogous to the resistive transition curves. These phenomena are discussed in terms of flux flow. The contribution of the flux flow to the thermal conductivity is estimated to be negligible. Lowering of the thermal conductivity at temperatures below T_c by a magnetic field is attributed to phonon scattering by the vortex lines.     

Electronic structure for sliding charge density waves

We present a model for the electron system in NbSe₃ based on its quasi one-dimensional metallic properties. In a one-dimensional metal phonon drag of 2K_F-phonons takes place at temperatures higher than θ_D, since the phonon-electron scattering rate τ^?1_ph?el is greater than the phonon-phonon rate τ^?1_ph?ph. this situation is in contrast to the situation in three dimensional metals, where phonon drag takes place only at very low temperatures. Our model explains the transport properties of the material including the electrical conductivity anistropy, the conductivity in a strong electric field, and the Hall effect data.     

表面共振圆环结构对Si纳米线热传导的调控

利用声子的波动性,在纳米线表面引入共振结构,可以有效阻碍声子输运.为进一步优化共振结构,本文基于平衡态分子动力学(EMD)方法,研究表面共振圆环结构的高度和宽度对Si纳米线热输运性质的影响.结果表明：随着共振圆环高度的增加,Si纳米线的热导率逐渐减小,最大减幅可达61.9%.当高度达到2nm以后,热导率基本不再变化.共振圆环宽度则对热导率的影响较小.声子色散关系中出现的平带,证实了共振圆环引起的声子共振效应;最低共振频率的变化说明了共振圆环中的声子波长决定了共振圆环高度对纳米线热导率的最大影响程度.研究进一步发现,随着共振圆环高度的增加,声学支声子对热导率贡献的比重变小.本文研究结果对高效热电材料和隔热材料的微纳结构设计提供了一种新的思路.     

Electrical properties and emission mechanisms of Zn-doped β-Ga2O3 films

We study the electrical properties and emission mechanisms of Zn-doped β-Ga₂O₃ film grown by pulsed laser deposition through Hall effect and cathodoluminescence which consist of ultraviolet luminescence (UV), blue luminescence (BL) and green luminescence (GL) bands. The Hall effect measurements indicate that the carrier concentration increases from 7.16×10¹¹ to 6.35×10¹² cm⁻³ with increasing a nominal Zn content from 3 to 7 at%. The UV band at 272 nm is not attributed to Zn dopants and ascribed as radiative electron transition from conduction band to a self-trapped hole while the BL band is attributable to defect level related to Zn dopant. The BL band has two emission peaks at 415 and 455 nm, which are ascribed to the radiative electron transition from oxygen vacancy (V_O) to valence band and recombination of a donor–acceptor pair (DAP) between V_O donor and Zn on Ga site (Zn_Ga) acceptor, respectively. The GL band is attributed to the phonon replicas’ emission of the DAP. The acceptor level of Zn_Ga is estimated to be 0.26 eV above the valence band maximum. The transmittance and absorption spectra prove that the Zn-doped β-Ga₂O₃ film is a dominantly direct bandgap material. The results of Hall and cathodoluminescence measurements imply that the Zn dopant in β-Ga₂O₃ film will form an acceptor Zn_Ga to produce p-type conductivity.     

Vertex corrections to the anomalous Hall effect in spin-polarized two-dimensional electron gases with a Rashba spin-orbit interaction

We study the effect of disorder on the intrinsic anomalous Hall conductivity in a magnetic two-dimensional electron gas with a Rashba-type spin-orbit interaction. We find that anomalous Hall conductivity vanishes unless the lifetime is spin-dependent, similar to the spin Hall conductivity in the nonmagnetic system. In addition, we find that the spin Hall conductivity does not vanish in the presence of magnetic scatterers.     

The electrical conduction mechanism in the semiconducting sodium niobate

The electric resistivity, Hall coefficient and thermoelectric power of the semiconducting NaNbO₃ were measured between 70 and 300K. Data indicate that this material behaves as a non-degenerate seniconductor. Oxygen defects which act as donors create a level at 0.12 eV below the conduction band. The phonon drag effect was observed below 230K.