Gate-voltage control of chemical potential and weak antilocalization in Bi₂Se₃

We report that Bi?Se? thin films can be epitaxially grown on SrTiO? substrates, which allow for very large tunablity in carrier density with a back gate. The observed low field magnetoconductivity due to weak antilocalization (WAL) has a very weak gate-voltage dependence unless the electron density is reduced to very low values. Such a transition in WAL is correlated with unusual changes in longitudinal and Hall resistivities. Our results suggest a much suppressed bulk conductivity at large negative gate voltages and a possible role of surface states in the WAL phenomena.     

Molecular-beam epitaxy of topological insulator Bi2Se3 （111） and （221） thin films

This paper presents an overview of the growth of Bi2Se3, a prototypical three-dimensional topological insulator, by molecular-beam epitaxy on various substrates. Comparison is made between the growth of Bi2 Se3 （111） on van der Waals （vdW） and non-vdW substrates, with attention paid to twin suppression and strain. Growth along the [221] direction of Bi2Se3 on InP （001） and GaAs （001） substrates is also discussed.     

Nanostructuring and improved performance of ternary Bi–Sb–Te thermoelectric materials

A ternary (Bi,Sb)₂Te₃ bulk nanostructured thermoelectric compound has been prepared by a combination of hydrothermal synthesis and hot pressing. It was found that the grain sizes of the hot-pressed bulk sample vary from tens to hundreds of nanometers, which would be favorable to enhance the scattering of both carriers and phonons, resulting in a high Seebeck coefficient with a satisfactory electrical conductivity and a very low thermal conductivity. The highest figure of merit ZT of the nanostructured (Bi,Sb)₂Te₃ bulk sample reaches 1.28 at 303 K, which is not only remarkably higher than the zone-melted one, but also higher than commercial state-of-the-art Bi₂Te₃-based materials. PACS  72.20.Pa; 73.63.Bd; 81.07.Bc     

Determination of the thickness and optical constants of amorphous Ge–Se–Bi thin films

The effect of varying bismuth concentration on the optical constants of amorphous Ge₂₀Se_{80? x} Bi _x (where x = 0, 3, 6, 9 and 12 at%) thin films prepared by thermal evaporation has been investigated. The transmission spectra T(λ) of the films at normal incidence were obtained in the spectral region from 400 to 2500 nm. An analysis proposed by Swanepoel [J. Phys. E: Sci. Instrum. 16 (1983) p.1214], based on the use of the maxima and minima of the interference fringes, was applied to derive the real and imaginary parts of the complex index of refraction and also the film thickness. Increasing bismuth content was found to affect the refractive index and extinction coefficient of the Ge₂₀Se_{80? x} Bi _x films. Optical absorption measurements show that the fundamental absorption edge is a function of composition. With increasing bismuth content, the refractive index increases while the optical band gap decreases.     

Bulk superconducting phase with a full energy gap in the doped topological insulator Cu(x)Bi₂Se₃

The superconductivity recently found in the doped topological insulator Cu(x)Bi?Se? offers a great opportunity to search for a topological superconductor. We have successfully prepared a single-crystal sample with a large shielding fraction and measured the specific-heat anomaly associated with the superconductivity. The temperature dependence of the specific heat suggests a fully gapped, strong-coupling superconducting state, but the BCS theory is not in full agreement with the data, which hints at a possible unconventional pairing in Cu(x)Bi?Se?. Also, the evaluated effective mass of 2.6m(e) (m(e) is the free electron mass) points to a large mass enhancement in this material.     

Cascaded Raman shifting of high-peak-power nanosecond pulses in As₂S₃ and As₂Se₃ optical fibers

We report efficient cascaded Raman scattering of near-IR nanosecond pulses in large-core (65 μm diameter) As?S? and As?Se? optical fibers. Raman scattering dominates other spectral broadening mechanisms, such as four-wave mixing, modulation instability, and soliton dynamics, because the fibers have large normal group-velocity dispersion in the spectral range of interest. With ~2 ns pump pulses at a wavelength of 1.9 μm, four Stokes peaks, all with peak powers greater than 1 kW, have been measured.     

Compositional dependence of the optical properties of amorphous Se100– x Te x thin films

Thin films of amorphous Se_{100 –x} Te _x with different compositions (x = 10, 20, 30 and 40 at%) were deposited on glass substrates by thermal evaporation. Transmission spectra T(λ) of the films at normal incidence were obtained in the spectral region from 400 to 2500 nm. A straightforward analysis proposed by Swanepoel [J. Phys. E: Sci. Instrum. 17 896 (1984)], using of the maxima and minima of the interference fringes, was applied to derive the real and imaginary parts of the complex index of refraction plus film thickness. The dispersion of the refractive index is discussed in terms of the single-oscillator Wemple and DiDomenico model [Phys. Rev. B 3 1338 (1971)]. The optical band gap was determined from the spectral dependence of the absorption coefficient using the Tauc formula [in The Optical Properties of Solids, edited by F. Abeles (North Holland, Amsterdam, 1970), p. 227]. The refractive index increases and the optical band gap decreases with increasing tellurium content.     

Detection of internal cracks and ultrasound characterization of nanostructured Bi₂Te₃-based thermoelectrics via acoustic microscopy

The search for thermoelectric (TE) materials for highly efficient devices aims at improving the TE efficiency and broadening their areas of applications. We created nanostructured thermoelectric Bi-Sb-Te-family materials by high energy (ball milling) pre-treatment of the parent materials followed by high-pressure/high-temperature treatment. Bi_0.5Sb_1.5Te₃ compositions with the superfluous maintenance of tellurium was used for the synthesis of the samples with p-type electrical conductivity. Acoustic microscopy was used to study elastic properties and bulk irregularities and to detection of internal cracks both in the parent materials and in the created nanostructured samples. The data has been used for optimization of parameters of synthesis of nanostructured thermoelectrics.     

Photoinduced effects on the optical constants of a-Ge–Se–Bi chalcogenide glassy thin films

In addition to the conversion from p-type to n-type conductivity that occurs in Ge–Se–Bi thin films when Bi is incorporated in a certain concentration. We found that, when these films were illuminated to UV light, after being annealed at glass transition temperature T _g, the photobleaching is dominant for Ge₂₀Se_80?x Bi _x (x=0, 2.5, and 5 at.%), while for Ge₂₀Se_72.5Bi_7.5 photodarkening is dominant. The photoinduced changes in the optical constants were studied. The refractive index (n) has been analysed according to the Wwmple–DiDominico single oscillator model and the values of E _o and E _d for exposed and unexposed films were determined, respectively. The photostructural effects were discussed in the light of single–double well model proposed by Tanaka and chemical bond approach.     

Radiation effects on the optical properties of Se85−x Te15Sb x thin films

The optical absorption of the as-deposited and γ-irradiated (doses of 3, 10, 12, 15 Mrad) thermally evaporated Se_85?x Te₁₅Sb _x (x=0, 6, 9) films was measured. The refractive index n and the extinction coefficient k of the films were calculated using an analytical method developed by Zheng et al. The Urbach relation was used in the fundamental edge region to calculate the width of the band tail states. The behavior of the composition with high concentration of antimony (x=9) was attributed to the produced Se–Sb bonds and an excess of Te–Te bonds, which break the chain structure of the Se–Te system and generate defects in the film. The related optical parameters were also calculated and discussed.     

Synthesis and characterization of highly textured Pt–Bi thin films

Pt–Bi films were synthesized on glass and thermally oxidized silicon substrates by e-beam evaporation and annealing. The structures were characterized using X-ray diffraction (XRD) and transmission electron microscopy/selected area electron diffraction (TEM/SAED) techniques. Single-phase PtBi was obtained at an annealing temperature of 300°C, whereas a higher annealing temperature of 400°C was required to obtain the highly textured γ-PtBi₂ phase. TEM/SAED analysis showed that the films annealed at 400°C contain a dominant γ-PtBi₂ phase with a small amount of β-PtBi₂ and α-PtBi₂ phases. Both the PtBi and γ-PtBi₂ phases are highly textured in these two kinds of film: the c-axis of the hexagonal PtBi phase is mostly in the film plane, whereas the c-axis of the trigonal γ-PtBi₂ phase is perpendicular to the film plane. The electrical resistivity of the film with the γ-PtBi₂ phase was smaller by one order of magnitude than that of the film with the PtBi phase.     

On the properties and stability of thermally evaporated Ge–As–Se thin films

Thin films of Ge–As–Se chalcogenide glasses have been deposited by thermal evaporation from bulk material and submitted to thermal treatments. The linear refractive index and optical band-gap for as-deposited and annealed films have been analyzed as function of the deposition parameters, chemical composition and mean coordination number (MCN). The chemical composition of the films was found to be directly affected by deposition rate, with low rates producing films with elevated Ge and reduced As content, whilst at high rates the Ge content was generally reduced and As levels increased compared with the bulk starting material. As a result films with close to the same stoichiometry as the bulk glass could be obtained by choosing appropriate deposition conditions. As-deposited films with MCN in between 2.44 and 2.55 showed refractive indices and optical band-gaps very close to those of the bulk glass whereas outside this range the film indices were higher and the optical gaps lower than those of the bulk glass. Upon annealing at close to their glass transition temperature, high MCN films evolved such that their indices and band-gaps approached the bulk glass values whereas at low MCN films resulted in no changes to the film properties.     

Synthesis and performance of Zn–Ni–P thin films

The electroplating of Zn–Ni–P thin film alloys from a sulfate bath containing phosphoric and phosphorous acid was investigated. The bath composition and the deposition parameters were optimized through Hull cell experiments, and the optimum experimental conditions were determined(p H = 2, temperature = 298–313 K, zinc sulfate concentration =30 g·L-1, EDTA concentration = 15 g·L-1, and current density = 1.0–2.0 A·dm-2). The SEM analysis of the coating deposited from the optimum bath revealed fine-grained deposits of the alloy in the presence of EDTA. Optical microscopy analysis indicated an electrodeposited thin film with uniform thickness and good adhesion to the steel substrate. The good adherence of the coatings was also demonstrated by the scratch tests that were performed, with a maximum determined value of 25 N for the critical load. Corrosion resistance tests revealed good protection of the steel substrate by the obtained Zn–Ni–P coatings, with values up to 85.89% for samples with Ni contents higher than 76%. The surface analysis of the thin film samples before and after corrosion was performed by X-ray photoelectron spectroscopy(XPS).     

Photoconductivity in amorphous thin films of Ge22Se78−xBix

Temperature and intensity dependence of photoconductivity is studied in amorphous thin films of Ge₂₂Se_78−x Bi_x with x = 0, 2 and 10. Transient photoconductivity measurements have also been made on the same samples. Our results show that photosensitivity decreases as Bi concentration is increased from x = 0 to x = 2. However, at high concentration of Bi(x = 10), photosensitivity again increases. Transient photoconductivity also show a different behaviour at low and high concentration of Bi. Results have been explained in terms of defect states produced due to Bi incorporation in GeSe system.     

The effect of Bi content on the thermal stability and crystallization of Se–Te chalcogenide glass

Glass formation and devitrification of intermediate alloys in the Se–Te–Bi system were studied by differential scanning calorimetry. A comparison of various simple quantitative methods to assess the level of stability of the glassy materials in the above-mentioned system is presented. All of these methods are based on characteristic temperatures, such as the glass transition temperature, T _g, the onset temperature of crystallization, T _in, the temperature corresponding to the maximum crystallization rate, T _p, or the melting temperature, T _m. In this work, a kinetic parameter, K _r(T), is added to the stability criteria. The thermal stability of several compositions of Se–Te–Bi was evaluated experimentally and correlated with the activation energies of crystallization by this kinetic criterion and compared with those evaluated by other criteria. All the results confirm that the thermal stability decreases with increasing Bi content in this glassy system. The crystallization results are analysed and the activation energy and mechanism of crystallization characterized.