共查询到20条相似文献,搜索用时 11 毫秒
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报道了制备在50mm石英玻璃衬底上的透明氧化锌薄膜晶体管(ZnO-TFT),采用了底栅和顶栅两种结构进行比较.ZnO沟道层由射频磁控溅射方法制备,SiO2薄膜作为栅绝缘层.结果发现底栅结构的ZnO-TFT具有较好的电学性质,该器件工作在n沟道增强模式,具有较好的夹断效应和饱和特性,其场效应迁移率、阈值电压和电流开关比分别为18.4cm2/(V·s),-0.5V和104.顶栅结构的ZnO-TFT则工作在n沟道耗尽模式,没有明显的饱和特征.不同结构ZnO-TFT电学性质的差别可能是由于不同的ZnO/SiO2界面特性所致.两种结构的ZnO-TFT在可见光波段都有很高的光学透过率. 相似文献
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报道了制备在50mm石英玻璃衬底上的透明氧化锌薄膜晶体管(ZnO-TFT),采用了底栅和顶栅两种结构进行比较.ZnO沟道层由射频磁控溅射方法制备,SiO2薄膜作为栅绝缘层.结果发现底栅结构的ZnO-TFT具有较好的电学性质,该器件工作在n沟道增强模式,具有较好的夹断效应和饱和特性,其场效应迁移率、阈值电压和电流开关比分别为18.4cm2/(V·s),-0.5V和104.顶栅结构的ZnO-TFT则工作在n沟道耗尽模式,没有明显的饱和特征.不同结构ZnO-TFT电学性质的差别可能是由于不同的ZnO/SiO2界面特性所致.两种结构的ZnO-TFT在可见光波段都有很高的光学透过率. 相似文献
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Bhupendra K. Sharma Bongkyun Jang Jeong Eun Lee Sang‐Hoon Bae Tae Woong Kim Hak‐Joo Lee Jae‐Hyun Kim Jong‐Hyun Ahn 《Advanced functional materials》2013,23(16):2024-2032
A stretchable and transparent In‐Ga‐Zn‐O (IGZO) thin film transistors with high electrical performance and scalability is demonstrated. A load‐controlled roll transfer method is realized for fully automated and scalable transfer of the IGZO TFTs from a rigid substrate to a nonconventional elastomeric substrate. The IGZO TFTs exhibit high electrical performance under stretching and cyclic tests, demonstrating the potentiality of the load‐controlled roll transfer in stretchable electronics. The mechanics of the load‐controlled roll transfer is investigated and simulated, and it is shown that the strain level experienced by the active layers of the device can be controlled to well below their maximum fracture level during transfer. 相似文献
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High‐Mobility ZnO Thin Film Transistors Based on Solution‐processed Hafnium Oxide Gate Dielectrics 下载免费PDF全文
Mazran Esro George Vourlias Christopher Somerton William I. Milne George Adamopoulos 《Advanced functional materials》2015,25(1):134-141
The properties of metal oxides with high dielectric constant (k) are being extensively studied for use as gate dielectric alternatives to silicon dioxide (SiO2). Despite their attractive properties, these high‐k dielectrics are usually manufactured using costly vacuum‐based techniques. In that respect, recent research has been focused on the development of alternative deposition methods based on solution‐processable metal oxides. Here, the application of the spray pyrolysis (SP) technique for processing high‐quality hafnium oxide (HfO2) gate dielectrics and their implementation in thin film transistors employing spray‐coated zinc oxide (ZnO) semiconducting channels are reported. The films are studied by means of admittance spectroscopy, atomic force microscopy, X‐ray diffraction, UV–Visible absorption spectroscopy, FTIR, spectroscopic ellipsometry, and field‐effect measurements. Analyses reveal polycrystalline HfO2 layers of monoclinic structure that exhibit wide band gap (≈5.7 eV), low roughness (≈0.8 nm), high dielectric constant (k ≈ 18.8), and high breakdown voltage (≈2.7 MV/cm). Thin film transistors based on HfO2/ZnO stacks exhibit excellent electron transport characteristics with low operating voltages (≈6 V), high on/off current modulation ratio (~107) and electron mobility in excess of 40 cm2 V?1 s?1. 相似文献
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Jae‐Heon Shin Ji‐Su Lee Chi‐Sun Hwang Sang‐Hee Ko Park Woo‐Seok Cheong Minki Ryu Chun‐Won Byun Jeong‐Ik Lee Hye Yong Chu 《ETRI Journal》2009,31(1):62-64
We report on the bias stability characteristics of transparent ZnO thin film transistors (TFTs) under visible light illumination. The transfer curve shows virtually no change under positive gate bias stress with light illumination, while it shows dramatic negative shifts under negative gate bias stress. The major mechanism of the bias stability under visible illumination of our ZnO TFTs is thought to be the charge trapping of photo‐generated holes at the gate insulator and/or insulator/channel interface. 相似文献
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有机薄膜晶体管以其成本低、柔性好、易加工等优点越来越受到人们的青睐,目前已广泛应用于低端器件。为了获得更实际的应用,OTFTs的性能还需进一步的提高和改善。文章中以酞菁铜(CuPc)为有机半导体材料,制备了双栅结构的有机薄膜晶体管,其阈值电压为-4.5V,场效应迁移率0.025cm2/V.s,开关电流比Ion/Ioff达到9.8×103,与单栅有机薄膜晶体管相比,双栅器件在更低的操作电压下获得了更大的输出电流,场效应迁移率更高,而且通过对两个栅压的调节,对导电沟道实现了更好的控制,器件性能有了较大的提高。 相似文献
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Han Eol Lee Seungjun Kim Jongbeom Ko Hye‐In Yeom Chun‐Won Byun Seung Hyun Lee Daniel J. Joe Tae‐Hong Im Sang‐Hee Ko Park Keon Jae Lee 《Advanced functional materials》2016,26(34):6170-6178
Flexible transparent display is a promising candidate to visually communicate with each other in the future Internet of Things era. The flexible oxide thin‐film transistors (TFTs) have attracted attention as a component for transparent display by its high performance and high transparency. The critical issue of flexible oxide TFTs for practical display applications, however, is the realization on transparent and flexible substrate without any damage and characteristic degradation. Here, the ultrathin, flexible, and transparent oxide TFTs for skin‐like displays are demonstrated on an ultrathin flexible substrate using an inorganic‐based laser liftoff process. In this way, skin‐like ultrathin oxide TFTs are conformally attached onto various fabrics and human skin surface without any structural damage. Ultrathin flexible transparent oxide TFTs show high optical transparency of 83% and mobility of 40 cm2 V?1 s?1. The skin‐like oxide TFTs show reliable performance under the electrical/optical stress tests and mechanical bending tests due to advanced device materials and systematic mechanical designs. Moreover, skin‐like oxide logic inverter circuits composed of n‐channel metal oxide semiconductor TFTs on ultrathin, transparent polyethylene terephthalate film have been realized. 相似文献
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Hendrik Faber Benjamin Butz Christel Dieker Erdmann Spiecker Marcus Halik 《Advanced functional materials》2013,23(22):2828-2834
All‐inorganic transparent thin‐film transistors deposited solely by the solution processing method of spray pyrolysis are reported. Different precursor materials are employed to create conducting and semiconducting species of ZnO acting as electrodes and active channel material, respectively, as well as zirconium oxide as gate dielectric layer. Additionally, a simple stencil mask system provides sufficient resolution to realize the necessary geometric patterns. As a result, fully functional low‐voltage n‐type transistors with a mobility of 0.18 cm2 V?1 s?1 can be demonstrated via a technique that bears the potential for upscaling. A detailed microscopic evaluation of the channel region by electron diffraction, high‐resolution and analytical TEM confirms the layer stacking and provides detailed information on the chemical composition and nanocrystalline nature of the individual layers. 相似文献
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利用高纯度、高均一性的半导体型单壁碳纳米管(s-SWCNT)网络薄膜作为薄膜晶体管的沟道材料,以高透明度、低薄膜电阻的银纳米线(Ag NW)网络薄膜作为源、漏电极,在玻璃基底上制备了大面积、高透明度的碳纳米管薄膜晶体管阵列,并使用聚甲基丙烯酸甲酯(PMMA)薄膜在器件表面通过干法封装获得了较低回滞的电子器件,得到了整体透明度达到82%以上的器件。提出的器件制备方法不仅制备材料易得,不需要高温过程,而且能够实现器件的大面积制备,对碳纳米管薄膜晶体管的全透明柔性化进程具有推进作用。 相似文献
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Yepin Zhao Zhengxu Wang Guangwei Xu Le Cai Tae‐Hee Han Anni Zhang Quantan Wu Rui Wang Tianyi Huang Pei Cheng Sheng‐Yung Chang Daqian Bao Zhiyu Zhao Minhuan Wang Yijie Huang Yang Yang 《Advanced functional materials》2020,30(34)
Solution‐processed indium‐gallium‐zinc oxide (IGZO) thin film transistors (TFTs) have become well known in recent decades for their promising commercial potential. However, the unsatisfactory performance of small‐sized IGZO TFTs is limiting their applicability. To address this issue, this work introduces an interface engineering method of bi‐functional acid modification to regulate the interfaces between electrodes and the channels of IGZO TFTs. This method increases the interface oxygen vacancy concentration and reduces the surface roughness, resulting in higher mobility and enhanced contact at the interfaces. The TFT devices thus treated display contact resistance reduction from 9.1 to 2.3 kΩmm, as measured by the gated four‐probe method, as well as field‐effect mobility increase from 1.5 to 4.5 cm2 (V s)?1. Additionally, a 12 × 12 organic light emitting diode display constructed using the acid modified IGZO TFTs as switching and driving elements demonstrate the applicability of these devices. 相似文献
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Solution processing, including printing technology, is a promising technique for oxide thin‐film transistor (TFTs) fabrication because it tends to be a cost‐effective process with high composition controllability and high throughput. However, solution‐processed oxide TFTs are limited by low‐performance and stability issues, which require high‐temperature annealing. This high thermal budget in the fabrication process inhibits oxide TFTs from being applied to flexible electronics. There have been numerous attempts to promote the desired electrical characteristics of solution‐processed oxide TFTs at lower fabrication temperatures. Recent techniques for achieving low‐temperature (<350 °C) solution‐processed and printed oxide TFTs, in terms of the materials, processes, and structural engineering methods currently in use are reviewed. Moreover, the core techniques for both n‐type and p‐type oxide‐based channel layers, gate dielectric layers, and electrode layers in oxide TFTs are addressed. Finally, various multifunctional and emerging applications based on low‐temperature solution‐processed oxide TFTs are introduced and future outlooks for this highly promising research are suggested. 相似文献
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基于射频磁控溅射法制备了以非晶铟镓锌氧化物(a-IGZO)作为有源层的底栅顶接触式薄膜场效应晶体管(Thin Film Transistor,TFT),其长/宽比为300μm/100μm。研究了该器件在无激光和在三种不同波长激光照射下的光敏特性。实验表明,器件在波长分别为660、450和405nm三种激光照射下的阈值电压Vth分别为4.2、2.5和0V,均低于无激光时的4.3V,且器件的阈值电压随激光波长减小单调降低,此外,随着激光波长的下降,“明/暗”电流比K由0.54上升到8.06(在VGS=6V且VDS=5V条件下),光敏响应度R由0.33μA/mW上升到4.88μA/mW,可见激光波长越短,可获得更强的光电效应,光灵敏度也更高,该效应表明该器件在光电探测等领域具有广阔的应用前景。 相似文献
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